![FS200R07N3E4RBOSA1 — IGBT Module, Six Pack [Full Bridge], 200 A, 1.55 V, 600 W, 150 °C, Module](/media/2/2/9/8EC51753D6E50922.webp)
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FS200R07N3E4RBOSA1
IGBT Module, Six Pack [Full Bridge], 200 A, 1.55 V, 600 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.55V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:650V; Transistor
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 600W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 200A
- Power Dissipation Pd: 600W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 200A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 62.2 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FS200R07N3E4R
VCES = 650V
IC nom = 200A / ICRM = 400A
- Motorantriebe
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- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom
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- T
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- High Short Circuit Capability, Self Limiting Short
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- T
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- Kupferbodenplatte
- Lötverbindungstechnik
- Standardgehäuse
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1
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS200R07N3E4R
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FS200R07N3E4R<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-05<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 60°C, Tvj max= 175°C<br>IC nom<br>200<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>600<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,15<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>13,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,38<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,0Ω<br>td on<br>0,15<br>0,16<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,0Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,0Ω<br>td off<br>0,34<br>0,37<br>0,38<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,0Ω<br>tf<br>0,06<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 200 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 5700 A/µs (Tvj= 150°C)<br>RGon= 2,0Ω<br>Eon<br>1,10<br>1,70<br>2,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 200 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 2,0Ω<br>Eoff<br>7,90<br>9,40<br>9,65<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>960<br>760<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤10 µs,<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,25<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,085<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS200R07N3E4R
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|200|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|2850<br>2700<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||160<br>230<br>240||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 200 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||10,0<br>17,0<br>20,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,00<br>5,20<br>5,80||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,45|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�AS date�of�publication:�2013-11-05 approved�by:�RS revision:�2.0
3
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS200R07N3E4R
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||21||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,80||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm|
|Gewicht<br>Weight||G||300||g|
Der Strom im Dauerbetrieb ist auf 50 A effektiv pro Anschlusspin begrenzt. The current under continuous operation ist limited to 50 A rms per connector pin.
prepared�by:�AS approved�by:�RS
date�of�publication:�2013-11-05 revision:�2.0
4
## IGBT-Module IGBT-modules
## FS200R07N3E4R
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IC =f(V CE) IC =f(V CE)<br>VGE ts Vv Tvj = :50°C<br>400 a Tvj = 25°C 400 es VGE = 19V | 7 y<br>360 Tvj = 125°C 360 VGE = 17V<br>E Tvj = 150°C O F VGE = 15V ue<br>VGE = 13V<br>320 Peer e y 320 VGE = 11V YA<br>[TT | |<br>VGE = 9V<br>PEP Pye)fy [il<br>280 280<br>SRRRRREEET TET aa | Jd ee, [|] A<br>240 240<br>ane ae<br>SERRE[vi /<br>200 200<br>EE PAR) Cee<br>160 SRRRREE Aewe 160 eeefii/<br>120 SRR 120 /<br>EEy AR eee aee ee<br>PPA EP e t<br>80 80<br>Coy E e<br>40 40<br>PTiLYIT<br>0 0<br>4 TTT TTT LP AP<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE Sov VGE LNeVR Gon £2 Ω Ro Goff =2 Ω ,V CE =300V<br>400 16<br>Tvj = 25°C Eon, Tvj = 125°C<br>360 fF Tvj = 125°C Eoff, Tvj = 125°C +} +a<br>Tvj = 150°C L; 14 Eon, Tvj = 150°C ae<br>Eoff, Tvj = 150°C<br>320<br>12<br>ee ,<br>280<br>ee ee<br>| | | ye | 10 PP a<br>240<br>P| ee ae<br>ee<br>200 [i 8 Pot<br>eee<br>160<br>6<br>7 | | pA | | | |<br>120<br>eA eeeeee<br>4<br>ee<br>80<br>y poe<br>ee 2<br>40 2<br>pie<br>0 0<br>5 6 7 8 9 10 | 11 12 e 0 50 100 150 200 e 250 300 350 400<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
# IGBT-ModuleIGBT-modules FS200R07N3E4R
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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1| C =200A,V CE =300V<br>16 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>14 I Eon, Tvj = 150°C ooo or TT TT TTT]<br>| Eoff, Tvj = 150°C P| | | ft re<br>12 a Py oT TP A<br>A e e ee e e ee ee aa<br>a || |<br>0,1<br>10 a = Ye<br>a ee eeeeee eeee seterT Tr TTTeat TTT<br>ee ee a |<br>8<br>6 Pf ty fe pp fe aee ell<br>ACITIME<br>0,01<br>4 |pttP|| fff]| cp oereetfeb]PT—- pret aPea a EUV CLAIM ee ee ee | EET|<br>i: 1 2 3 4<br>2 ri[K/W]: 0,015 0,0825 0,08 0,0725<br>ee aee a τ i[s]: 0,01 0,02 0,05 0,1<br>|<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =4+15V,R Goff =2 Ω ,T vj =150°C<br>480 400<br>IC, Modul Tvj = 25°C<br>440 [= IC a , Chip 360 Tvj = 125°C 7<br>Tvj = 150°C<br> Je fF<br>400<br>320<br>360 eee — — | | tg<br>280<br>320<br>TPP 240<br>280<br>pp yy ofl<br>240 200<br>200 Pp VE aa<br>160<br>160<br>120<br>120<br>80<br>80<br>ee a, ae<br>40<br>40<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,4 0,8 1,2 1,6 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## FS200R07N3E4R
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Erec =f (I F) Erec =f(R G)<br>RGon =2 Ω ,V CE =300V IF =200A,V CE =300V<br>9 9<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>8 e Erec, Tvj = 150°C e 8 Erec, Tvj = 150°C<br>7 7<br>PT TTT Lbee ETT e e Tee L<br>etek<br>6 6<br>ptt| ee | EEE<br>pieaTF EE.<br>5 5<br>4 eet 4 LN<br>Piet<br>3 3<br>VA ET TL LLNee<br>_<br>2 2<br>etty ttt tt Ett|oN| | —| Pe<br>1 1<br>7 tt tT;TL) ELLE EEE<br>0 0<br>0 50 100 150 200 250 300 350 400 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC = f (t) R=f(T)<br>1 100000<br>' {— ZthJC : Diode e a t i [I Rtyp a ———<br>o o TT jy<br>PT a T T a e eee ee<br>BEAU cal NATO AT e a eeeee<br>0,1 LUA IM 10000<br>aoes es Sees ee es EsSS<br>PT T VU ET ES NN se ee<br>PT VET TTT TTT TTT a Ne a ee<br>A potNEee<br>CN aI 2 ee eee<br>0,01 ES 1000 Ne<br>Pt ee<br>a a a<br>PT TTT ETT NS<br>PT [TT] TTT TTT a eeee<br>i: 1 2 3 4<br>ri[K/W]: 0,027 0,1485 0,144 0,1305<br>a τ i[s]: 0,01 0,02 0,05 0,1 | | ee ee<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
7
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS200R07N3E4R
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Schaltplan�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>
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## **Vorläufige�Daten Preliminary�Data**
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## **Gehäuseabmessungen�/�package�outlines**
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Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�AS approved�by:�RS
date�of�publication:�2013-11-05 revision:�2.0
8
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FS200R07N3E4R
## **Nutzungsbedingungen**
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application.<br>**----- End of picture text -----**<br>
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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →