![FS200R06KE3BOSA1 — IGBT Module, Six Pack [Full Bridge], 200 A, 1.45 V, 600 W, 150 °C, Module](/media/E/1/E/82BE2547D3E30E1E.webp)
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FS200R06KE3BOSA1
IGBT Module, Six Pack [Full Bridge], 200 A, 1.45 V, 600 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:600W; Collector Emitter Voltage V(br)ceo:600V; Trans
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 3
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 600W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 200A
- Power Dissipation Pd: 600W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 200A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Voltage V(br)ceo: 600V
- Collector Emitter Saturation Voltage: 1.45V
- Collector Emitter Saturation Voltage Vce(on): 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 66.32 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS200R06KE3
**==> picture [86 x 38] intentionally omitted <==**
EconoPACK™3�mit�schnellem�Trench/Feldstop�IGBT³�und�Emitter�Controlled3�Diode� EconoPACK™3�with�fast�trench/fieldstop�IGBT³�and�Emitter�Controlled3�diode�
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FS200R06KE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPACK™3mitschnellemTrench/FeldstopIGBT³undEmitterControlled3Diode<br>EconoPACK™3withfasttrench/fieldstopIGBT³andEmitterControlled3diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 60°C, Tvj max= 175°C<br>IC nom<br>200<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>400<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>600<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>IC= 200 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 3,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>2,15<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>13,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,38<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,0Ω<br>td on<br>0,15<br>0,16<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 2,0Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,0Ω<br>td off<br>0,34<br>0,37<br>0,38<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 200 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 2,0Ω<br>tf<br>0,06<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 200 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 5700 A/µs (Tvj= 150°C)<br>RGon= 2,0Ω<br>Eon<br>1,00<br>1,55<br>1,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 200 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 2,0Ω<br>Eoff<br>5,65<br>6,70<br>6,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1400<br>1000<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,25<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,085<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
1
> IGBT-ModuleIGBT-modules FS200R06KE3
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|200|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|400|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|2850<br>2700<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>IF= 200 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 200 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||160<br>230<br>240||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 200 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||10,0<br>17,0<br>20,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 200 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,00<br>5,20<br>5,80||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,45|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0
2
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS200R06KE3
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 225|||
||||min.|typ.|max.||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||21||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'||1,80||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm|
|Gewicht<br>Weight||G||300||g|
Der Strom im Dauerbetrieb ist auf 50 A effektiv pro Anschlusspin begrenzt. The current under continuous operation ist limited to 50 A rms per connector pin.
prepared�by:�CM approved�by:�RS
date�of�publication:�2013-10-03 revision:�2.0
3
## IGBT-Module IGBT-modules Technische Information FS200R06KE3 / Technical Information
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>400 a . 400 es<br>Tvj = 25°C VGE = 19V<br>360 Tvj = 125°C 360 P VGE = 17V oe<br>E Tvj = 150°C E) VGE = 15V |<br>VGE = 13V<br>320 Pao e e 320 VGE = 11V OE<br>| | | jy io LaeT<<br>VGE = 9V<br>280 280<br>Si ae<br>SRRRRRR ee eee eee<br>240 240<br>ae F<br>200 200<br>Pett TT beri‘; PE eA/<br>160 BRREEEPE/ ’ 160 Bi)[ii / /<br>/<br>120 120<br>[1 /<br>80 80<br>TEE TALL TEP EL et“<br>Potiig tt<br>40 40<br>pie r TTT} LY<br>0 0<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =2 Ω ,R Goff =2 Ω ,V CE =300V<br>400 16<br>Tvj = 25°C Eon, Tvj = 125°C<br>360 EF TT [H] vjvj = 125°C = 150°C [Y)] 14 FO EEoffon, T, Tvjvj = 125°C = 150°C VIL.<br>Eoff, Tvj = 150°C<br>320<br>m e ] | Eb<br>yf 12 | | Ya<br>280 lf RG<br>ee :ee 10 Z1<br>240<br>~<br>200 8<br>ee eeeee<br>f<br>160<br>pt | se 6 <<br>120<br>pt | tg Ae :<br>4<br>80<br>2<br>40<br>pt tay | | eet<br>ne<br>0 0<br>5 6 7 8 9 10 11 12 0 50 100 150 200 250 300 350 400<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
4
## IGBT-Module IGBT-modules Technische Information FS200R06KE3 / Technical Information
**==> picture [486 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =200A,V CE =300V<br>20 1<br>Eon, Tvj = 125°C 1 ZthJC : IGBT a<br>18 —_— Eoff, Tvj = 125°C r it tf fo SeHH— ror eEE eeHH} tH<br>Eon, Tvj = 150°C PT TT T T<br>Eoff, Tvj = 150°C a a e e|<br>16<br>14 pp de pi ll<br>0,1<br>1210 Pf fff LeaAaaL 4 aaaPTa 2YeBa a20yea eeeee|ee ee<br>va a a |<br>8<br>0,01<br>64 P|poeeryTZt | tf| || dd | 7_eeaPT TT ee eVeee<br>i: 1 2 3 4<br>2 eeESRRREEREE PTein TT T r τ ii[K/W]: [s]: 0,015 0,01 T 0,0825 0,02 0,08 0,05 0,0725 0,1 l l<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =2 Ω ,T vj =150°C<br>440 400<br>a 7<br>IC, Modul Tvj = 25°C<br>400 a I C , Chip A 360 | Tvj = 125°C ny<br>Tvj = 150°C<br>360<br>320<br>320<br>280<br>280<br>240<br>240<br>Se ee<br>200<br>200<br>160<br>160<br>120<br>120<br>80<br>80<br>40 40<br>0 0<br>Ss<br>0 100 200 300 400 500 600 700 0,0 0,4 0,8 1,2 1,6 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
5
IGBT-Module IGBT-modules
## FS200R06KE3
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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =2 Ω ,V CE =300V IF =200A,V CE =300V<br>9 8,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>8 Erec, Tvj = 150°C Erec, Tvj = 150°C<br>Es 7,0 IE<br>7<br>TT T Pe<br>6,0<br>6<br>5,0<br>Hitt tebe RTT<br>5 ERE ‘ SZa ene X\ SS<br>a Nan<br>4,0<br>4<br>3,0<br>3<br>byt ty WS<br>/ EL Ere<br>2,0<br>2<br>1 ATTTTTy} 1,0 LEee<br>0 0,0<br>0 40 80 120 160 200 240 280 320 360 400 0 2 4 6 8 10 12 14 16 18<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter NTC-Widerstand-Temperaturkennlinie (typisch)<br>transient thermal impedance Diode, Inverter NTC-Thermistor-temperature characteristic (typical)<br>ZthJC = f (t) R=f(T)<br>1 100000<br>' {— ZthJC : Diode e a t i [I Rtyp a ———<br>o o TT jy<br>PT a T T a e eee ee<br>BEAU cal NATO AT e a eeeee<br>0,1 e Z 10000<br>a ee<br>a SS<br>PT T VU ET ES NN se ee<br>PT VET TTT TTT TTT a Ne a ee<br>A potNEee<br>CN aI 2 ee eee<br>0,01 CANIM 1000<br>PtLVN TANT VM LfeeON<br>a a a<br>PT TTT ETT NS<br>PT [TT] TTT TTT a eeee<br>i: 1 2 3 4<br>ri[K/W]: 0,027 0,1485 0,144 0,1305<br>a τ i[s]: 0,01 0,02 0,05 0,1 | | ee ee<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>E [mJ] E [mJ]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
6
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS200R06KE3
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Schaltplan�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>
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## **Vorläufige�Daten Preliminary�Data**
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## **Gehäuseabmessungen�/�package�outlines**
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Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0
7
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FS200R06KE3
## **Nutzungsbedingungen**
## application.
8
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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