![FS150R12PT4BOSA1 — IGBT Module, Six Pack [Full Bridge], 150 A, 1.75 V, 680 W, 150 °C, Module](/media/3/2/6/86CF0C57D4E70623.webp)
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FS150R12PT4BOSA1
IGBT Module, Six Pack [Full Bridge], 150 A, 1.75 V, 680 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 4
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 680W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 150A
- Power Dissipation Pd: 680W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 89.78 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FS150R12PT4
NTC
VCES = 1200V
IC nom = 150A / ICRM = 300A
- Hochleistungsumrichter
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- USV-Systeme
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1
> IGBT-ModuleIGBT-modules FS150R12PT4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FS150R12PT4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:MK<br>approvedby:MK<br>dateofpublication:2013-11-11<br>revision:2.2<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 90°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>150<br>200<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>680<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 5,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,25<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,35<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,35<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,14<br>0,15<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,03<br>0,035<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,32<br>0,40<br>0,42<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,09<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 4400 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>7,80<br>14,0<br>15,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 5000 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>8,20<br>12,5<br>14,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>540<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,22<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,084<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
> IGBT-ModuleIGBT-modules FS150R12PT4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|3050<br>2950<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,20|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 4400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||180<br>195<br>200||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 4400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||14,0<br>25,0<br>29,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 4400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||6,10<br>11,0<br>12,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,40|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�MK date�of�publication:�2013-11-11 approved�by:�MK revision:�2.2
3
IGBT-Module IGBT-modules
## FS150R12PT4
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||25,0<br>12,5||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||11,0<br>7,0||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|20<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,40||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Anzugsdrehmoment f. elektr. Anschllsse<br>Terminal connection torque||Schraube M6<br>- Montage gem. gultiger Applikationsschrift<br>Screw M6<br>- Mounting according to valid application note|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||400||g|
4
IGBT-Module IGBT-modules
## FS150R12PT4
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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>300 a | y v 300 es<br>Tvj = 25°C VGE = 19V<br>270 Tvj = 125°C 270 B VGE = 17V ee<br>E Tvj = 150°C LIS) VGE = 15V |<br>VGE = 13V<br>240 e— 240 VGE = 11V<br>|} fie |} i7eeane<br>VGE = 9V<br>e e<br>210 210<br>eeaf /<br>180 180<br>/ re ee ee/; F; ee<br>150 150<br>120 ee ee 120 ee ee<br>/<br>90 90<br>ee Yd ee 5 J<br>/<br>60 60<br>30 Ane 30 eee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>300 50<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C 45 Eoff, Tvj = 125°C<br>e Tvj = 150°C e Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>ee<br>240 40<br>e/ a 7 a<br>210 35<br>ee e s<br>180 30<br>Re<br>150 25<br>ae eee<br>= oad<br>120 20<br>ee ee eee 2<br>ee / Kee<br>90 15<br>ee ee eee cee<br>60 10<br>ey eee cee<br>ee ee<br>30 5<br>poet= [etl]<br>0 0<br>= TT Tt<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
IGBT-Module IGBT-modules
## FS150R12PT4
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**----- Start of picture text -----**<br>
Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =150A,V CE =600V<br>40 1<br>Eon, Tvj = 125°C | ZthJC : IGBT ee<br>HH— ee<br>Eoff, Tvj = 125°C<br>35 EF]. EEonoff, T, Tvjvj = 150°C = 150°C ] | SSooo PTe TT TEElTTT THH}ltH<br>— _ PCCP c e<br>30<br>oa 0,1 2Uei M TTT<br>25 Z| PtAt tt2 ee ee<br>5 on Ze<br>a “ “v4ae |YTfT T ity TTETTTT<br>20<br>15 we:y |) | | || 20PT AI TTI|TTI ET|<br>ACTIN[| ELIMITE<br>0,01<br>7<br>a<br>10 ee a ee |<br>PT TTTT<br>rr ee ee||<br>i: 1 2 3 4<br>5 ri[K/W]: 0,0132 0,0726 0,0704 0,0638<br>τ i[s]: 0,01 0,02 0,05 0,1<br>0 0,001<br>0 2 4 6 8 10 12 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.1 Ω ,T vj =150°C<br>350 300<br>IC, Modul Tvj = 25°C<br>IC, Chip 270 Tvj = 125°C<br>300 Tvj = 150°C<br>E Eye<br>240<br>250 ERR 210 PELL EEE LILA<br>180<br>200<br>150<br>150<br>120<br>90<br>100<br>60<br>50<br>Saeee sane<br>30<br>BE BE Zane<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## FS150R12PT4
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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon a Ω ,V CE =600V IF = 180A, V CE = 600 V<br>20 16<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>18 E Erec, Tvj = 150°C y Erec, Tvj = 150°C<br>14<br>|) EB<br>16<br>12<br>14<br>1210 a ee|e 108 ReeRee_——_ |<br>8 7<br>6<br>6<br>GA) 4 Cee<br>4<br>2<br>2<br>0 0<br>0 50 100 150 200 250 300 0 2 4 6 8 10 12<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
**==> picture [487 x 280] intentionally omitted <==**
**----- Start of picture text -----**<br>
ZthJC =f (t) R=f(T)<br>1 ee 100000 ee |<br>ZthJC : Diode Rtyp<br>a ll<br>a a [J p<br>PT TTT ET TT TTT es<br>PTA fff pea rep Ppp t<br>LINE | Dea ITE 10000 Ne ee<br>/ —<br>/ a<br>0,1<br>YTSSE [TTA] EET ETTaTTT PSS~~ ooo<br>a a aN eee<br>a 1000 ————_————<br>PUNE ETE EEE ET) St<br>i: 1 2 3 4<br>ri[K/W]: 0,0225 0,12375 0,12 0,10875<br>f τ i[s]: 0,01 o 0,02 0,05 0,1 pS<br>0,01 TCO on 100 PEt ye<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
7
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS150R12PT4
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Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>
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## **Vorläufige�Daten Preliminary�Data**
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prepared�by:�MK date�of�publication:�2013-11-11<br>approved�by:�MK revision:�2.2<br>**----- End of picture text -----**<br>
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FS150R12PT4
## **Nutzungsbedingungen**
## application.
9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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