![FS150R12KT4B9BOSA1 — IGBT Module, Trench/Fieldstop, Six Pack [Full Bridge], 150 A, 1.75 V, 750 W, 150 °C, Module](/media/E/1/E/82BE2547D3E30E1E.webp)
Image not available
Illustrative purposes only
FS150R12KT4B9BOSA1
IGBT Module, Trench/Fieldstop, Six Pack [Full Bridge], 150 A, 1.75 V, 750 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:750W; Collector Emitter Voltage V(br)ceo:1.2kV; Transisto
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 750W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 150A
- Power Dissipation Pd: 750W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 92.71 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FS150R12KT4_B9
**==> picture [86 x 38] intentionally omitted <==**
EconoPACK™3�Modul�mit�Trench/Feldstop�IGBT4�und�verdoppelter�Emitter�Controlled�4�Dioden�Bestückung� EconoPACK™3�module�with�trench/fieldstop�IGBT4�and�doubled�mounting�Emitter�Controlled�4�diode�
**Vorläufige�Daten Preliminary�Data**
|TechnischeInformation/TechnicalInformation<br>FS150R12KT4_B9<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPACK™3ModulmitTrench/FeldstopIGBT4undverdoppelterEmitterControlled4DiodenBestückung<br>EconoPACK™3modulewithtrench/fieldstopIGBT4anddoubledmountingEmitterControlled4diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.2<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>150<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>750<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 5,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,25<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>5,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,35<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,35<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,14<br>0,15<br>0,16<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,025<br>0,033<br>0,036<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,35<br>0,43<br>0,44<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 150 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,05<br>0,075<br>0,085<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 5000 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>8,10<br>14,5<br>16,5<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 4400 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>8,30<br>13,0<br>14,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,20<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,11<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
1
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FS150R12KT4_B9
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|600|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|12500<br>9800<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,40<br>1,30<br>1,25|1,85|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 5000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||270<br>300<br>310||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 5000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||18,5<br>31,0<br>37,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 5000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||6,90<br>13,0<br>14,5||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,19|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,105||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
prepared�by:�CM approved�by:�RS
date�of�publication:�2013-11-04 revision:�2.2
2
IGBT-Module IGBT-modules
## FS150R12KT4_B9
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|20<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,80||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||300||g|
3
## IGBT-Module IGBT-modules Technische Information FS150R12KT4_B9 / Technical Information
**==> picture [487 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>300 a | y v 300 es<br>Tvj = 25°C VGE = 19V<br>270 Tvj = 125°C 270 B VGE = 17V ee<br>E Tvj = 150°C LIS) VGE = 15V |<br>VGE = 13V<br>240 Pe 240 VGE = 11V i2ceann<br>VGE = 9V<br>e e<br>210 210<br>ee ee<br>eeeaf /<br>180 180<br>/ re eee eee)/; F; eae<br>150 150<br>120 ae eee 120 eee) Zee<br>90 [fo 90<br>ee ¢ ee A J "|<br>/<br>60 60<br>30 Aneeee 30 eee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>300 40<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C Eoff, Tvj = 125°C<br>ee Tvj = 150°C a 35 e Eon, Tvj = 150°C e<br>Eoff, Tvj = 150°C<br>240<br>a] aa<br>30<br>210<br>pt TP T<br>25<br>180<br>CCEA e e<br>150 20<br>ee<br>120<br>ee 15 ee<br>90<br>10<br>60<br>SCAT) 5 LAE<br>30<br>4. wet<br>0 0<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
4
IGBT-Module IGBT-modules
## FS150R12KT4_B9
**==> picture [487 x 596] intentionally omitted <==**
**----- Start of picture text -----**<br>
Eon =f{(R),E G off =f(R G) ZthJC = f (t)<br>VGE =+15V,1 C =150A,V CE =600V<br>45 -— 1 a<br>Eon, Tvj = 125°C ZthJC : IGBT<br>40 Eoff, Tvj = 125°C P) ff |A eee e ee eoo<br>Eon, Tvj = 150°C a ee |<br>Eoff, Tvj = 150°C<br>ee a a<br>3530 P ]— f eetoo a T a E | |<br>25<br>Pl ee | | LUIWiel-CULINE | TA<br>4 “ii<br>0,1<br>20 i | | | EEE<br>/ EE<br>eA<br>1510 pARESISREPVA anEea |Vr<br>i: 1 2 3 4<br>5 PF YTSSSRUP Of PY LIA | TT | UI ri[K/W]: CT 0,012 EIN 0,066 0,064 ELI 0,058<br>τ i[s]: 0,01 0,02 0,05 0,1<br>PLA rAl ll<br>0 0,01<br>0 2 4 6 8 10 12 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Durchlasskennlinie der Diode, Wechselrichter (typisch) Schaltverluste Diode, Wechselrichter (typisch)<br>forward characteristic of Diode, Inverter (typical) switching losses Diode, Inverter (typical)<br>IF =f(V F) Erec =f(l F)<br>RGon = { 1 Ω ,V CE =600V<br>300 20<br>Tvj = 25°C Erec, Tvj = 125°C<br>270 F Tvj = 125°C a 18 e Erec, Tvj = 150°C e<br>Tvj = 150°C<br>240 Pe s ea 16 E T ee<br>210 14<br>PP ET eA PE e e<br>180 12<br>PPE EE EPere<br>PPEP/ / Y<br>150 10<br>EEErr<br>BRR<br>120 8<br>BRRRe 7 eee eee<br>90 6<br>60 4<br>PP itt ayALeeeTT? PZTeee|<br>30 2<br>0 0<br>Pt at TT | CL EE<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 0 30 60 90 120 150 180 210 240 270 300<br>VF [V] IF [A]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
5
IGBT-Module IGBT-modules
## FS150R12KT4_B9
**==> picture [485 x 279] intentionally omitted <==**
**----- Start of picture text -----**<br>
Erec =f(R G) ZthJC =fi(t<br>IF i604. V CE = 600 V 0<br>16 Cd 1 ee<br>| TE<br>Erec, Tvj = 125°C ZthJC : Diode<br>Erec, Tvj = 150°C<br>14 Se el H—a E t<br>12 ie: ee—— e Cerne PA Ce CETi<br>10 F c ee es<br>Rees U l<br>8 0,1<br>rT TTT AL TTT<br>64 PfPf fffo ft ff]P| PFErTAZet)TTTAZT1 EE HEiEt<br>a<br>a ee | i: 1 ea 2 3 4 | |<br>2 ri[K/W]: 0,0114 0,0627 0,0608 0,0551<br>τ i[s]: 0,01 0,02 0,05 0,1<br>A<br>0 0,01<br>0 2 4 6 8 10 12 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br>**----- End of picture text -----**<br>
6
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FS150R12KT4_B9
**==> picture [86 x 38] intentionally omitted <==**
## **Schaltplan�/�circuit_diagram_headline**
## **Vorläufige�Daten Preliminary�Data**
## **Gehäuseabmessungen�/�package�outlines**
**==> picture [48 x 47] intentionally omitted <==**
**==> picture [389 x 264] intentionally omitted <==**
|preparedby:CM|dateofpublication:2013-11-04|
|---|---|
|approvedby:RS|revision:2.2|
7
**==> picture [66 x 19] intentionally omitted <==**
**----- Start of picture text -----**<br>
IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FS150R12KT4_B9
**==> picture [110 x 11] intentionally omitted <==**
**----- Start of picture text -----**<br>
Nutzungsbedingungen<br>**----- End of picture text -----**<br>
**==> picture [42 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
application.<br>**----- End of picture text -----**<br>
8
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →