![FS150R06KE3BOSA1 — IGBT Module, Six Pack [Full Bridge], 150 A, 1.45 V, 430 W, 150 °C, Module](/media/E/1/E/82BE2547D3E30E1E.webp)
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FS150R06KE3BOSA1
IGBT Module, Six Pack [Full Bridge], 150 A, 1.45 V, 430 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:430W; Collector Emitter Voltage V(br)ceo:600V; Trans
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 3
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 430W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 150A
- Power Dissipation Pd: 430W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Voltage V(br)ceo: 600V
- Collector Emitter Saturation Voltage: 1.45V
- Collector Emitter Saturation Voltage Vce(on): 1.45V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 68.54 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS150R06KE3
**==> picture [86 x 38] intentionally omitted <==**
EconoPACK™3�mit�schnellem�Trench/Feldstop�IGBT³�und�Emitter�Controlled3�Diode� EconoPACK™3�with�fast�trench/fieldstop�IGBT³�and�Emitter�Controlled3�diode�
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FS150R06KE3<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPACK™3mitschnellemTrench/FeldstopIGBT³undEmitterControlled3Diode<br>EconoPACK™3withfasttrench/fieldstopIGBT³andEmitterControlled3diode<br>preparedby:CM<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 55°C, Tvj max= 175°C<br>IC nom<br>150<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>300<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>430<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>IC= 150 A, VGE= 15 V<br>VCE sat<br>1,45<br>1,60<br>1,70<br>1,90<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 2,40 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,60<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>9,30<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,285<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 150 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>td on<br>0,12<br>0,14<br>0,14<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 150 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 150 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>td off<br>0,34<br>0,37<br>0,38<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 150 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>tf<br>0,06<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 150 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 5400 A/µs (Tvj= 150°C)<br>RGon= 3,3Ω<br>Eon<br>0,85<br>1,35<br>1,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 150 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 3800 V/µs (Tvj= 150°C)<br>RGoff= 3,3Ω<br>Eoff<br>4,10<br>5,30<br>5,60<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>1100<br>750<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,35<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,085<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
1
> IGBT-ModuleIGBT-modules FS150R06KE3
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|150|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|300|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|2050<br>1950<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>IF= 150 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 150 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||150<br>180<br>185||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 150 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||7,00<br>13,0<br>15,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 150 A, - diF/dt = 5400 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,95<br>3,50<br>3,95||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,60|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,15||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0
2
IGBT-Module IGBT-modules
## FS150R06KE3
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|21<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,80||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||300||g|
3
IGBT-Module IGBT-modules
## FS150R06KE3
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>300 a . 300 es | /<br>Tvj = 25°C VGE = 19V<br>270 Tvj = 125°C 270 VGE = 17V<br>F Tvj = 150°C L ay | VGE = 15V Lua‘ ET<br>VGE = 13V<br>240 rT fi 240 VGE = 11V I}:<br>er e | eee aT |<br>VGE = 9V<br>P o J<br>210 210<br>SRRRRRE JeSee : See/<br>180 180<br>‘| /<br>‘f /<br>150 150<br>vy i<br>120 BRRRRREeAPL TEEPE 120 Tahi t T<br>90 SRR “ 90 / an<br>SRRee) REe/Geen eee o e<br>60 60<br>SRG? ec e ee eee)Aeh ae<br>30 30<br>of /<br>0 0<br>pie r ETT E T } LE<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =33 Ω ,R Goff =33 Ω ,V CE =300V<br>300 10<br>Tvj = 25°C Eon, Tvj = 125°C<br>270 Tvj = 125°C 9 Eoff, Tvj = 125°C<br>F Tvj = 150°C F || Eon, Tvj = 150°C Lit te<br>Eoff, Tvj = 150°C<br>240 8<br>et EB f oo<br>210 e e 7 oe<br>lf ae ee e<br>ee<br>180 6<br>150 5<br>pt |PeEE<br>ee<br>120 4<br>en ae eee eee<br>90 3<br>60 2<br>Feee [e/a] eeeee eee<br>30 1<br>ee ec<br>pe ee<br>0 0<br>5 6 7 8 9 10 11 12 0 30 60 90 120 150 180 210 240 270 300<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
4
## IGBT-Module IGBT-modules
## FS150R06KE3
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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =150A,V CE =300V<br>15 1<br>14 E EEonoff LT] , T, Tvjvj = 125°C = 125°C | ft [ mem ZthJC : IGBT oummmmme<br>13 | Eon, Tvj = 150°C ry Tf [Td eee eee ee see Sct | eect<br>Eoff, Tvj = 150°C<br>1211 | r|—- J T| | | opey PT A TTETT TTE ee t |h<br>4 UCC<br>10 0,1<br>pot TIE ET<br>9 Pot | tt | Te PAA EE)<br>8 P| || Tt| | ceree| | Pe= e e ed eecee<br>7 a ae a ee |<br>6<br>5 0,01<br>4<br>3 P| yt | | | | | dt =F<br>2 Piy7E | | tt tt SS i: ri[K/W]: ee 1 0,021 2 0,1155 3 0,112 4 0,1015 ||<br>1 pyre} 6 τ i[s]: A 0,01 0,02 0,05 0,1<br>Peer eee} LAI im o<br>0 0,001<br>0 3 6 9 12 15 18 21 24 27 30 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =3.3 Ω ,T vj =150°C<br>330 300<br>IC, Chip Tvj = 25°C<br>300 I C , Chip 270 Tvj = 125°C<br>Tvj = 150°C<br>SOT a :<br>270<br>240<br>240<br>210<br>210<br>180<br>180<br>po} | ee a<br>150<br>150<br>pop n/a<br>120<br>120<br>90<br>90<br>60<br>60<br>30 HER A 30 a ae<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,4 0,8 1,2 1,6 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
5
IGBT-Module IGBT-modules
## FS150R06KE3
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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =3.3 Ω ,V CE =300V IF =150A,V CE =300V<br>6 5 LS<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>5<br>4<br>4<br>3<br>ie .<br>3<br>2<br>7 CL NSERLE TL<br>2<br>1<br>1<br>0 0<br>0 30 60 90 120 150 180 210 240 270 300 0 3 6 9 12 15 18 21 24 27 30<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
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ZthJC =f (t) R=f(T)<br>1 100000<br>' {— ZthJC : Diode ee a i [I Rtyp a ———<br>oo o Oe eT jy<br>PT TTT eT TTT a e e<br>||| a eeee<br>2 ee ee<br>BAU 2A 1 RAIS AT e e<br>0,1 NN RE 10000<br>FE Es<br>Ce SS<br>rT YU TT ES NN se ee<br>TYE TT TT TT a Ne a ee<br>NE<br>PALL TET pot ee<br>YEA TNE EET 2 ee eee<br>0,01 1000<br>SLAMPtVN TAN VM LfeeON<br>a a a<br>PT TTT ETT NS<br>PT [TT] TTT TTT a eeee<br>i: 1 2 3 4<br>ri[K/W]: 0,036 0,198 0,192 0,174<br>a τ i[s]: 0,01 0,02 0,05 0,1 | ee ee<br>0,001 100<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
6
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS150R06KE3
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Schaltplan�/�circuit_diagram_headline<br>**----- End of picture text -----**<br>
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## **Vorläufige�Daten Preliminary�Data**
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## **Gehäuseabmessungen�/�package�outlines**
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**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>
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prepared�by:�CM date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0
7
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FS150R06KE3
## **Nutzungsbedingungen**
## application.
8
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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