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FS100R12W2T7BOMA1
IGBT Module, Six Pack, 70 A, 1.5 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPACK Series
- IGBT Technology: IGBT7 - T7 [Trench Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Six Pack
- Transistor Mounting: Panel
- DC Collector Current: 70A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 70A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.5V
- Collector Emitter Saturation Voltage Vce(on): 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 48.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FS100R12W2T7
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VCES = 1200V IC nom = 100A / ICRM = 200A
- Hilfsumrichter
- Klimaanlagen
- • Motorantriebe • Servoumrichter
- USV-Systeme
- CEsat
- Trenchstop[TM]
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- Al2O3 Substrat mit kleinem thermischen Widerstand
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- Lötverbindungstechnik
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-
-
-
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- CEsat
- • Trenchstop[TM]
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- Al2O3
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-
**Digit**
Datasheet www.infineon.com
2019-08-12
FS100R12W2T7
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## **Vorläufige�Daten Preliminary�Data**
|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|100|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 65°C, Tvj max= 175°C|ICDC|70|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|200|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 100 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,50<br>1,64<br>1,72|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 2,50 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||1,80||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||1,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||21,7||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,076||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||0,009|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 100 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,15<br>0,168<br>0,175||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 100 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,04<br>0,044<br>0,046||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 100 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,29<br>0,37<br>0,405||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 100 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,10<br>0,19<br>0,25||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 100 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 2200 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||5,00<br>6,60<br>7,80||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 100 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 2800 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 1,8Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||6,20<br>9,90<br>12,6||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||370<br>350||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,750||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
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FS100R12W2T7
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## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|970<br>860|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,72<br>1,59<br>1,52|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 2200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||99,0<br>134<br>154||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 2200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||8,50<br>14,4<br>19,5||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 2200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||2,30<br>5,60<br>7,60||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||1,20||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
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FS100R12W2T7
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## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||40||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||4,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||39||g|
Tvj op > 150°C ist im Überlastbetrieb zulässig. Detaillierte Angaben sind AN 2018-14 zu entnehmen.
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
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## **Vorläufige�Daten Preliminary�Data**
**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V
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200<br>Tvj = 25°C<br>Tvj = 125°C<br>175 Tvj = 175°C<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C
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200<br>VGE = 19V<br>VGE = 17V<br>175 VVGEGE = 15V = 13V<br>VGE = 11V<br>VGE = 9V<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V
## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�1.8� Ω ,�RGoff�=�1.8� Ω ,�VCE�=�600�V
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200<br>Tvj = 25°C<br>Tvj = 125°C<br>175 Tvj = 175°C<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>5 6 7 8 9 10 11 12 13<br>VGE [V]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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22<br>Eon, Tvj = 125°C<br>20 EEonoff,, T Tvvjj = 175°C = 125°C<br>Eoff, Tvj = 175°C<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 25 50 75 100 125 150 175 200<br>IC [A]<br>**----- End of picture text -----**<br>
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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =100A,V CE =600V VGE =415V,R Gon =18 Ω ,R Goff =18 Ω ,V CE =600V,T vj =175°C<br>40 10<br>Eon, Tvj = 125°C tdon<br>Eon, Tvj = 175°C | t r a<br>35 EEoffoff, T, Tvjvj = 125°C = 175°C tt dofff<br>= /Yj a———<br>30 1<br>ae<br>25<br>20 0,1<br>ee ee<br>15 - [_]<br>2<br>7<br>10 — 0,01 A<br>/<br>aee<br>5<br>0 0,001<br>0 2 4 6 8 10 12 14 16 18 20 0 50 100 150 200<br>RG [ Ω ] IC [A]<br>Schaltzeiten IGBT,Wechselrichter (typisch) dv/dt IGBT,Wechselrichter (typisch)<br>switching times IGBT,Inverter (typical) dv/dt IGBT, Inverter (typical)<br>tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) dv/dt= f(R G)<br>VGE =+15V,1 C =100A,V CE =600V,T vj =175°C VGE =+15V,V CE =600V,T vj =25°C<br>10 a a a 7<br>tdon dv/dt-on at 1/10 Inom<br>| t r a dv/dt-off at Inom<br>| J a<br>t doff<br>t f 6<br>5<br>1<br>4<br>oe oo ee i<br>3<br>- N N ~<br>0,1<br>annGnan MILLE<br>2<br>1<br>0,01 0<br>0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20<br>RG [ Ω ] RG [Ohm]<br>E [mJ] t [µs]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>
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FS100R12W2T7
## **(RBSOA)**
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ZthJH<br>**----- End of picture text -----**<br>
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1<br>ZthJH : IGBT<br>pot TE<br>0,1<br>i: 1 2 3 4<br>ri[K/W]: 0,026 0,548 0,108 0,068<br>τ i[s]: 0,000974 0,247 0,266 1,6<br>0,01<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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IC =f(V CE)<br>VGE =415V,R Goff =18 Ω ,T vj =175°C<br>250<br>IC, Modul<br>IC, Chip<br>200 ar<br>150<br>100<br>50<br>0<br>0 200 400 600 800 1000 1200 1400<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
C=f(V CE) VGE =0OV,T vj
> VGE =f(Q G)
> IC =100A,T vj =25°C
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1000 Oe 15 {|<br>Cies VCE = 600 V<br>Coes<br>Cres<br>100 10<br>10 5<br>1 0<br>ee<br>—————<br>0,1 _eeSeeeS ———E——E———E———E— -5<br>SSS SSS SSS<br>0,01 -10<br>0,001 -15<br>0 10 20 30 40 50 60 70 80 90 100 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8<br>VCE [V] QG [µC]<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>
Datasheet
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IF =f(V F)<br>200<br>Tvj = 25°C<br>Tvj = 125°C /<br>175 Tvj = 175°C i !<br>/ [/]<br>/ [/]<br>/<br>150 /<br>i/<br>/<br>/<br>125 / / / !/<br>if<br>/ [/]<br>100 //<br>/ [/]<br>/<br>/<br>75 jt<br>j/<br>t/jl<br>50 f/<br>ff<br>7<br>25 4<br>v/<br>ee<br>0<br>0,00 0,50 1,00 1,50 2,00 2,50<br>VF [V]<br> [A]<br>IF<br>**----- End of picture text -----**<br>
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Erec =fil F)<br>RGon =1.8 Ω ,V CE =600V<br>12<br>11 E E rec rec , T , T vj vj = 125°C = 175 ° C<br>a<br>10 _—<br>9<br>8<br>7 72<br>7 7 7<br>6<br>5<br>/<br>4 /<br>\// VA<br>3 /<br>/<br>2 7<br>1<br>0<br>0 25 50 75 100 125 150 175 200<br>IF [A]<br>E [mJ]<br>**----- End of picture text -----**<br>
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Erec =f(R G) ZthJH =f (t)<br>IF =100A,V CE =600V<br>10 10 aee<br>EErecrec, T, Tvjvj = 125°C = 175°C H— P ZthJH : Diode EPUeee<br>9<br>8<br>7<br>1 PT Hii<br>6 SSE<br>SS eoaott oocet<br>5<br>4<br>0,1<br>3<br>2<br>i: 1 2 3 4<br>1 ri[K/W]: 0,055 0,259 0,648 0,238<br>τ i[s]: 0,00106 0,0253 0,205 1,7<br>0 0,01<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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## **Vorläufige�Daten Preliminary�Data**
**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(TNTC)
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100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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## **Schaltplan�/�Circuit�diagram**
## **Vorläufige�Daten Preliminary�Data**
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J<br>**----- End of picture text -----**<br>
## **Gehäuseabmessungen�/�Package�outlines**
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In fin e o n<br>**----- End of picture text -----**<br>
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## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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