![FS100R07N2E4BPSA1 — IGBT Module, Six Pack [Full Bridge], 100 A, 1.55 V, 335 W, 150 °C, Module](/media/7/2/8/7ECC1363D2E60827.webp)
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FS100R07N2E4BPSA1
IGBT Module, Six Pack [Full Bridge], 100 A, 1.55 V, 335 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPACK 2
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 335W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 100A
- Power Dissipation Pd: 335W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 48.79 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FS100R07N2E4
VCES = 650V
IC nom = 100A / ICRM = 200A
- Motorantriebe
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- Hohe Kurzschlussrobustheit, selbstlimitierender Kurzschlussstrom
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- T
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- High Short Circuit Capability, Self Limiting Short
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- T
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- Kupferbodenplatte
- Lötverbindungstechnik
- Standardgehäuse
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1
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS100R07N2E4
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FS100R07N2E4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-06<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>650<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 70°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>335<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,75<br>1,95<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>1,00<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>2,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,20<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,19<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 650 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>td on<br>0,07<br>0,08<br>0,08<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 3,3Ω<br>tr<br>0,02<br>0,02<br>0,02<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>td off<br>0,26<br>0,29<br>0,30<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 100 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 3,3Ω<br>tf<br>0,07<br>0,07<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, di/dt = 5100 A/µs (Tvj= 150°C)<br>RGon= 3,3Ω<br>Eon<br>0,33<br>0,77<br>0,88<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 300 V, LS= 30 nH<br>VGE= ±15 V, du/dt = 4000 V/µs (Tvj= 150°C)<br>RGoff= 3,3Ω<br>Eoff<br>3,50<br>4,70<br>4,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>480<br>380<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤10 µs,<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,45<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,19<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS100R07N2E4
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|650|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|100|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1100<br>990<br>|A²s<br>A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,55<br>1,50<br>1,45|1,95|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||130<br>150<br>160||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 100 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||4,00<br>8,00<br>10,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 5100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,30<br>2,25<br>2,75||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,80|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,33||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�AS date�of�publication:�2013-11-06 approved�by:�RS revision:�2.0
3
IGBT-Module IGBT-modules
## FS100R07N2E4
|Modul / Module|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV|
|Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3|||
|Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm|
|Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm|
|Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 200|||
||||min.|typ.|max.||
|Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -|~~ee ~~|LsCE<br> ~~ee ee~~|19<br>~~ee~~|||nH|
|Chip|TC<br>= 25°C, pro Schalter / per switch|RCC'+EE'||1,80||mΩ|
|Module lead resistance, terminals - chip|||||||
|Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|Gewicht<br>Weight||G||180||g|
4
IGBT-Module IGBT-modules
## FS100R07N2E4
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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE ts Vv Tvj = i50°C<br>200 Tvj | = 25°C / ” 200 es VGE = 19V | 7 y<br>180 Tvj = 125°C 180 VGE = 17V<br>E Tvj = 150°C WI) F VGE = 15V ue<br>VGE = 13V<br>160 es 160 VGE = 11V<br>ee | yA<br>VGE = 9V i;<br>140 Pe )“aed 140 E es L[! ; a L | | |<br>es<br>120 120<br>re eeee e eee) Ce ee<br>100 100<br>80 80<br>A eeeae<br>60 ee 60 ee e<br>ee a 7 )<br>40 40<br>20 20<br>ee eee eeee<br>Poy LK<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC GE) Eon C off C)<br>VCE Sov VGE LNeVR Gon £33 Ω ,R Goff =3.3 Ω ,V CE =300V<br>200 8<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 Tvj = 125°C F Eoff, Tvj = 125°C OS<br>Ee T [ILLLYA] vj = 150°C L; 7 Eon, Tvj = 150°C a<br>Eoff, Tvj = 150°C<br>160 ee | ar<br>6<br>2<br>140<br>eee e e e eee<br>PPP ee 5 Poteee| ttPeee<br>120 PRfi eeenA eee<br>100 4<br>TTT Fee<br>80<br>|PA} 3 Eee<br>60<br>Pt} 7 P| tr Tt |<br>2<br>CA AEE<br>40<br>1<br>20<br>>ee 4AyAe ee poeee| oe<br>0 0<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
5
IGBT-Module IGBT-modules
## FS100R07N2E4
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**----- Start of picture text -----**<br>
E switching on G losses off IGBT, G) Inverter (typical) transient ZthJC thermal impedance IGBT, Inverter<br>VGE TNSV.1 C S100A,V. CE =300V "0<br>7 1<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>6 Eon, Tvj = 150°C<br>| Eoff, Tvj = 150°C +--+ EERIE Se<br>t r Bzat<br>5<br>eb beeck AAA Te<br>0,1<br>cooseeeeeereeeo | L O<br>4 PCCP)Py | | ty ty] heer] YTeS| Vie Tt Tt 6 TT oT TT<br>3<br>ytd tee]te SATa eeTE ee |<br>i a a a<br>0,01<br>2<br>CLLLl | aeeaee ee |<br>1 See 2eeeeeeenee se e i: 1 scar 2 3 4<br>ri[K/W]: 0,027 0,1485 0,144 0,1305<br>TTP Pee PETIT τ i[s]: 0,01 0,02 Ti 0,05 0,1 l<br>PEPE cooo| l<br>0 0,001<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA)<br>IF F)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) one characteristic of Diode, Inverter (typical)<br>IC CE)<br>VGE - ee V,R Goff +=3.3 Ω ,T vj =150°C<br>220 Ld 200 7<br>IC, Modul Tvj = 25°C<br>200 a I C , Chip a 180 Tvj = 125°C<br>Tvj = 150°C<br>180 po eS<br>160<br>160<br>140<br>140<br>120<br>120 PoE tT | |<br>100<br>100<br>pp ae a<br>80<br>80<br>60<br>60<br>40<br>40<br>Py pf | as |<br>20 20<br>ee<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,4 0,8 1,2 1,6 2,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## FS100R07N2E4
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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =3.3 Ω ,V CE =300V IF =100A,V CE =300V<br>4,0 4,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>3,6 E Erec, Tvj = 150°C J}| 3,6 Erec, Tvj = 150°C<br>3,2 3,2<br>2,8 e e 2,8 eee<br>a A! :<br>2,4 ee 2,4 eeee<br>Aree<br>2,0 2,0<br>Pir EE EE} ENS TE]<br>1,6 1,6<br>Pee EEE EPLE P ORERR<br>1,2 1,2<br>a es<br>0,8 0,8<br>0,4 Ok 0,4<br>0,0 0,0<br>0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
**==> picture [487 x 280] intentionally omitted <==**
**----- Start of picture text -----**<br>
ZthJC =f (t) R=f(T)<br>1 100000<br>i _— ZthJC : Diode et a ({— 1 Rtyp aSSE See SEES<br>Ra n e j—— 77 TT hv<br>rT TT eT pot ft tT ft ft tT tT pt te pe<br>a | P| | tT | | | tt PT tT | TT<br>pone ene fod SERRE<br>0,1 ae a 10000 eS<br>pf zee ee eee ee<br>a a<br>YT ZT Ti TT p | KP tT ft tt<br>Yr ATT TT TT Pp [| [TNT tt te et et<br>PAL TD PE Ee ENEe eee<br>PTE TTI TIE TT) SSS<br>0,01 ee 1000<br>Pt a<br>ee GS<br>PTrT TTT ETT Neeee<br>Pt tT TT TP| T i: 1 2 3 TT 4 potpt ffft tT fftf ft ffftp ftRKBA tT<br>ri[K/W]: 0,048 0,264 0,256 0,232<br>PT TT τ i[s]: 0,01 0,02 0,05 P 0,1 Pt TT TT TT TT TT AAT<br>0,001 AME Eiri } = 100 LEEEE<br>0,001 0,01 0,1 1 10 0 20 40 60 80 100 120 140 160<br>t [s] TC [°C]<br>] Ω<br> [K/W]<br>R[<br>thJC<br>Z<br>**----- End of picture text -----**<br>
7
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FS100R07N2E4
## **Schaltplan�/�circuit_diagram_headline**
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
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**----- Start of picture text -----**<br>
J<br>Gehäuseabmessungen�/�package�outlines<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
In fin e o n<br>**----- End of picture text -----**<br>
prepared�by:�AS date�of�publication:�2013-11-06 approved�by:�RS revision:�2.0
8
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FS100R07N2E4
## **Nutzungsbedingungen**
application.
9
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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