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FQU2N90TU-WS

Power MOSFET, N Channel, 900 V, 1.7 A, 5.6 ohm, TO-251 (IPAK), Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Product Range: QFET
  • Power Dissipation: 50W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 50W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 5.6ohm
  • Transistor Case Style: TO-251 (IPAK)
  • Drain Source Voltage Vds: 900V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 1.7A
  • Drain Source On State Resistance: 5.6ohm
  • Gate Source Threshold Voltage Max: 5V
Delivery and price
Units per pack 5040
Price 0.553 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet