
Illustrative purposes only

FQN1N60CTA
Power MOSFET, N Channel, 600 V, 300 mA, 9.3 ohm, TO-226AA, Through Hole
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Channel Type: N Channel
- Power Dissipation: 1W
- Transistor Mounting: Through Hole
- Transistor Polarity: N Channel
- Power Dissipation Pd: 1W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 9.3ohm
- Transistor Case Style: TO-226AA
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 300mA
- Drain Source On State Resistance: 9.3ohm
- Gate Source Threshold Voltage Max: 4V
Delivery and price | |
---|---|
Units per pack | 30000 |
Price | 0.182 € |
Current stock | 565 |
Lead time | 7 days |