FQD4P25TM-WS

Power MOSFET, P Channel, 250 V, 3.1 A, 2.1 ohm, TO-252 (DPAK), Surface Mount

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Manufacturer: ONSEMI
Product type: Single MOSFETs
Transistor Polarity:P Channel; Continuous Drain Current Id:-3.1A; Drain Source Voltage Vds:-250V; On Resistance Rds(on):1.63ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-5
MSL: MSL 1 - Unlimited
SVHC: No SVHC (15-Jan-2018)
No. of Pins: 3Pins
Channel Type: P Channel
Product Range: QFET
Qualification: -
Power Dissipation: 45W
Transistor Mounting: Surface Mount
Rds(on) Test Voltage: 10V
Transistor Case Style: TO-252 (DPAK)
Drain Source Voltage Vds: 250V
Operating Temperature Max: 150°C
Continuous Drain Current Id: 3.1A
Drain Source On State Resistance: 2.1ohm
Gate Source Threshold Voltage Max: 5V

Delivery and price
Units per pack	500
Price	0.512 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 10, 2026