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FQB4N80TM
Power MOSFET, N Channel, 800 V, 3.9 A, 2.8 ohm, TO-263AB, Surface Mount
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V;
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 130W
- Transistor Mounting: Surface Mount
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-263AB
- Drain Source Voltage Vds: 800V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 3.9A
- Drain Source On State Resistance: 2.8ohm
- Gate Source Threshold Voltage Max: 5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 0.45 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
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Updated at March 10, 2026