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FQA7N80C-F109

Power MOSFET, N Channel, 800 V, 7 A, 1.57 ohm, TO-3PN, Through Hole

  • Manufacturer: ONSEMI
  • Product type: Single MOSFETs
  • Product variants: No other variants available. No other names.
  • No. of Pins: 3Pins
  • Channel Type: N Channel
  • Product Range: QFET
  • Power Dissipation: 198W
  • Transistor Mounting: Through Hole
  • Transistor Polarity: N Channel
  • Power Dissipation Pd: 198W
  • Rds(on) Test Voltage: 10V
  • On Resistance Rds(on): 1.57ohm
  • Transistor Case Style: TO-3PN
  • Drain Source Voltage Vds: 800V
  • Operating Temperature Max: 150°C
  • Continuous Drain Current Id: 7A
  • Drain Source On State Resistance: 1.57ohm
  • Gate Source Threshold Voltage Max: 5V
Delivery and price
Units per pack 1000
Price 1.31 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet