FPDB40PH60B

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## **FPDB40PH60B** 

## **PFC SPM[®] 3 Series for 2-Phase Bridgeless PFC** 

## **Features** 

- UL Certified No. E209204 (UL1557) 

- 600 V - 40 A 2-Phase Bridgeless PFC with Integral Gate Driver and Protection 

- Very Low Thermal Resistance Using  Al2O3 DBC Substrate 

- Built-in NTC Thermistor for Temperature Monitoring 

- Built-in Shunt Resistor for Current Sensing 

- Optimized for 20kHz Switching Frequency 

- Isolation Rating: 2500 Vrms/min. 

## **Applications** 

## **General Description** 

The FPDB40PH60B is an advanced PFC SPM[®] 3 module providing a fully-featured, high-performance Bridgeless PFC (Power Factor Correction) input power stage for consumer, medical, and industrial applications. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockout, over-current shutdown, thermal monitoring, and fault reporting. These modules also feature high-performance output diodes and shunt resistor for additional space savings and mounting convenience. 

- 2-Phase Bridgeless PFC Converter 

## **Related Source** 

- _AN-9041 - Bridgeless PFC SPM 3 Series Design Guide_ 

**Figure 1. Package Overview** 

## **Package Marking & Ordering Information** 

|**Device**|**Device Marking**|**Package**|**Packing Type**|**Quantity**|
|---|---|---|---|---|
|FPDB40PH60B|FPDB40PH60B|SPMGC-027|Rail|10|



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## **Integrated Drive, Protection and System Control Functions** 

- For IGBTs: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection 

- Fault signal: corresponding to OC and UV fault 

- Built-in thermistor: temperature monitoring 

- Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input 

## **Pin Configuration** 

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(1) VCC(L)<br>(2) COM (21) VAC-<br>(3) NC<br>(4) IN(R) (22) NSENSE<br>(5) IN(S)<br>(6) VFO (23) NC<br>(7) CFOD<br>(8) CSC<br>(9) NC<br>(24) N<br>(10) NC<br>(11) NC Case Temperature (T C)<br>Detecting Point<br>(12) NC<br>(13) NC (25) R<br>(14) NC<br>(15) NC<br>(16) NC<br>(26) S<br>(17) NC<br>(18) NC DBC Substrate<br>(19) RTH<br>(27) PR<br>(20) VTH<br>**----- End of picture text -----**<br>


**Figure 2. Top View** 

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## **Pin Descriptions** 

|**Pin Number**|**Pin Name**|**Pin Description**|
|---|---|---|
|1|VCC|Common Bias Voltage for IC and IGBTs Driving|
|2|COM|Common Supply Ground|
|4|IN(R)|Signal Input for Low-Side R-Phase IGBT|
|5|IN(S)|Signal Input for Low-Side S-Phase IGBT|
|6|VFO|Fault Output|
|7|CFOD|Capacitor for Fault Output Duration Selection|
|8|CSC|Capacitor(Low-Pass Filter) for Over-Current Detection|
|19|R(TH)|Series Resistor for The Use of Thermistor|
|20|V(TH)|Thermistor Bias Voltage|
|21|VAC-|Current Sensing Terminal|
|22|NSENSE|Current Sensing Reference Terminal|
|24|N|Negative Rail of DC-Link|
|25|R|Output for R-Phase|
|26|S|Output for S-Phase|
|27|PR|Positive Rail of DC-Link|
|3, 9~18, 23|NC|No Connection|



## **Internal Equivalent Circuit** 

|(20) VTH<br>(19) RTH<br>(8) CSC<br>(7) CFOD<br>(6) VFO<br>(5) IN(S)<br>(4) IN(R)<br>(2) COM<br>(1) VCC|CSC<br>CFOD<br>VFO<br>IN(S)<br>IN(R)<br>COM<br>VCC<br>OUT(S)<br>OUT(R)<br>NTC<br>Thermistor|Q1|Shunt<br>Resistor<br>Q2<br>D1<br>D3<br>D2<br>D4|Shunt<br>Resistor<br>Q2<br>D1<br>D3<br>D2<br>D4|(27) PR<br>(26) S<br>(25) R<br>(23) NC<br>(22) NSENSE<br>(21) VAC-<br>(24) N|
|---|---|---|---|---|---|
||||D1|||
||||Q2<br>D3|||
|||||||
|||||||
|||||||



## **Figure 3. Internal Block Diagram** 

## **Notes:** 

1. Converter is composed of two IGBTs including four diodes and one IC which has gate driving and protection functions. 

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## **Absolute Maximum Ratings** (TJ = 25°C,  unless otherwise specified.) **Converter Part** 

|**Symbol**|**Item**|**Condition**|**Rating**|**Unit**|
|---|---|---|---|---|
|Vi|Supply Voltage|Applied between R - S|264|Vrms|
|Vi(Surge)|Supply Voltage (Surge)|Applied between R - S|500|V|
|VPN|Output Voltage|Applied between P - N|450|V|
|VPN(Surge)|Output Voltage (Surge)|Applied between P - N|500|V|
|VCES|Collector - Emitter Voltage||600|V|
|±IC|Each IGBT Collector Current|TC= 25°C|40|A|
|±ICP|Each IGBT Collector Current (Peak)|TC= 25°C, Under 1 ms Pulse Width|70|A|
|PC|Collector Dissipation|TC= 25°C per IGBT|113|W|
|VRRM|Repetitive Peak Reverse Voltage||600|V|
|IFSM|Peak Forward Surge Current|Single Half Sine-Wave|350|A|
|PRSH|Power Rating of Shunt Resistor|TC< 125°C|2|W|
|TJ|Operating Junction Temperature|(Note 2)|-40 ~ 150|°C|



**Notes:** 

2.  The maximum junction temperature rating of the power chips integrated within the PFC SPM **[®]** product is 150°C(@TC ≤ 100°C). 

## **Control Part** 

|**Symbol**|**Item**|**Condition**|**Rating**|**Unit**|
|---|---|---|---|---|
|VCC|Control Supply Voltage|Applied between VCC- COM|20|V|
|VIN|Input Signal Voltage|Applied between IN - COM|-0.3 ~ 17.0|V|
|VFO|Fault Output Supply Voltage|Applied between VFO- COM|-0.3 ~ VCC+0.3|V|
|IFO|Fault Output Current|Sink Current at VFOPin|5|mA|
|VSC|Current Sensing Input Voltage|Applied between CSC- COM|-0.3~VCC+0.3|V|



## **Total System** 

|**Symbol**|**Item**|**Condition**|**Condition**|**Condition**|**Rating**|**Rating**|**Unit**|**Unit**|
|---|---|---|---|---|---|---|---|---|
|TC|Module Case Operation Temperature||||-20 ~ 100||°C||
|TSTG|Storage Temperature||||-40 ~ 150||°C||
|VISO|Isolation Voltage|60 Hz, Sinusoidal, AC 1 Minute, Connect<br>Pins to Heat-Sink Plate|||2500||Vrms||
|**Thermal Resistance**|||||||||
|**Symbol**|**Item**|**Condition**|**Min.**|**Typ.**||**Max.**||**Unit**|
|R(j-c)Q|Junction to Case Thermal Resistance<br>(Referenced to PKG Center)|IGBT|-|-||1.1||°C/W|
|R(j-c)HD||High-Side Diode|-|-||1.9||°C/W|
|R(j-c)LD||Low-Side Diode|-|-||1.4||°C/W|



## **Notes:** 

3. For the measurement point of case temperature(TC), please refer to Figure 2. 

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## **Electrical Characteristics** (TJ = 25°C, unless otherwise specified.) 

## **Converter Part** 

|**Symbol**|**Item**|**Condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VCE(SAT)|IGBT Saturation Voltage|VCC= 15 V, VIN= 5 V, IC= 40 A|-|1.8|2.3|V|
|VFH|High-Side Diode Voltage|IF= 40 A|-|2.2|2.7|V|
|VFL|Low-Side Diode Voltage|IF= 40 A|-|1.15|1.55|V|
|tON|Switching Times|VPN= 400 V, VCC= 15 V, IC= 40 A<br>VIN= 0 V5 V, Inductive Load<br>(Note 4)|-|500|-|ns|
|tC(ON)|||-|180|-|ns|
|tOFF|||-|500|-|ns|
|tC(OFF)|||-|90|-|ns|
|trr|||-|43|-|ns|
|Irr|||-|6|-|A|
|RSENSE|Current-Sensing resistor||1.8|2.0|2.2|m|
|ICES|Collector - Emitter<br>Leakage Current|VCE= VCES|-|-|250|A|



- **Notes:** 4. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 

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Irr<br>100% of IC 120% of IC<br>VCE IC<br>90% of I C<br>10% of VCE 10% of IC<br>IC 10% of IC VCE 10% of VCE<br>VIN VIN<br>tON trr tC(OFF)<br>tC(ON) tOFF<br>(a) Turn-on (b) Turn-off<br>**----- End of picture text -----**<br>


**Figure 4. Switching Time Definition** 

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## **Control Part** 

|**Symbol**|**Item**|**Item**|**Condition**|**Condition**|**Condition**|**Condition**|**Condition**|**Condition**|**Condition**|**Condition**|**Condition**|**Condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|IQCCL|Quiescent VCCSupply Current||VCC= 15 V, IN = 0 V|||||VCC- COM|||||-|-|26|mA|
|VFOH|Fault Output Voltage||VSC= 0 V, VFOCircuit: 4.7 kto 5 V Pull-up||||||||||4.5|-|-|V|
|VFOL|||VSC= 1 V, VFOCircuit: 4.7 kto 5 V Pull-up||||||||||-|-|0.8|V|
|VSC(ref)|Over-Current Trip Level||VCC= 15 V||||||||||0.45|0.50|0.55|V|
|UVCCD|Supply Circuit Under-Voltage<br>Protection||Detection Level||||||||||10.7|11.9|13.0|V|
|UVCCR|||Reset Level||||||||||11.2|12.4|13.2|V|
|tFOD|Fault-Out Pulse Width||CFOD= 33 nF (Note 5)||||||||||1.4|1.8|2.0|ms|
|VIN(ON)|ON Threshold Voltage||Applied between IN - COM||||||||||3.0|-|-|V|
|VIN(OFF)|OFF Threshold Voltage||||||||||||-|-|0.8|V|
|RTH|Resistance of Thermistor||at TC= 25°C (See Figure 5)||||||||||-|50|-|k|
||||at TC= 80°C (See Figure 5)||||||||||-|5.76|-|k|
|**Notes:**<br>5. The fault-out pulse width tFODdepends on the capacitance value of CFODaccording to the following approximate equation : CFOD= 18.3 x 10-6x tFOD[F]<br>**Figure 5. R-T Curve of the Built-in Thermistor**<br>R-T Graph<br>0<br>20<br>40<br>60<br>80<br>100<br>120<br>20<br>30<br>40<br>50<br>60<br>70<br>80<br>90<br>100 110 120 130<br>Temperature [C]<br>Resistance [k]||acitance va|||||||||||||||
||||||||||||||||||
||||||||||||||||||
||||||||||||||||||
||||||||||||||||||
||||||||||||||||||
||||||||||||||||||
||||||||||||||||||



## **Recommended Operating conditions** 

|**Symbol**|**Item**|**Condition**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VI|Input Supply Voltage|Applied between R - S|180|-|264|Vrms|
|VPN|Output Voltage|Applied between P - N|-|280|400|V|
|VCC|Control Supply Voltage|Applied between VCC- COM|13.5|15|16.5|V|
|dVCC/dt|Control Supply Variation|<br>Applied between IN - COM|-1|-|1|V/s|
|fPWM|PWM Input Signal|TC 100°C, TJ 125°C, per IGBT|-|20|-|kHz|



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## **Mechanical Characteristics and Ratings** 

|**Item**|**Condition**|**Condition**|**Min.**|**Typ.**|**Max.**|**Units**|
|---|---|---|---|---|---|---|
|Mounting Torque|Mounting Screw: M3<br>R|ecommended 0.62 N•m|0.51|0.62|0.72|N•m|
|Device Flatness|See Figure 6||0|-|+120|m|
|Weight|||-|15.00|-|g|



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(+)<br>(+)<br>(+)<br>**----- End of picture text -----**<br>


**Figure 6. Flatness Measurement Position** 

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## **Time Charts of Protective Function** 

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Input Signal<br>Internal IGBT<br>P3<br>Gate-Em itter Voltage<br>UV<br>P5<br>reset<br>Control Supply Voltage UV P2<br>detect<br>P6<br>P1<br>Output Current<br>Fault Output Signal P4<br>**----- End of picture text -----**<br>


P1 : Normal operation: IGBT ON and conducting current. P2 : Under-voltage detection. P3 : IGBT gate interrupt. P4 : Fault signal generation. P5 : Under-voltage reset. P6 : Normal operation: IGBT ON and conducting current. 

**Figure 7. Under-Voltage Protection** 

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P 5<br>In p u t S ig n a l<br>P 6<br>Inte rn a l IG B T<br>G a te -E m itte r V o lta g e<br>O C  D ete ctio n<br>P 1<br>P 4<br>O u tp u t C u rre n t P 7<br>P 2<br>O C  R efe re nce<br>V olta ge  (0 .5V )<br>S e n sin g  V o lta ge<br>R C  F ilte r D ela y<br>P 8<br>F a u lt O u tp u t S ig n a l P 3<br>**----- End of picture text -----**<br>


P1 : Normal operation: IGBT ON and conducting current. P2 : Over current detection. P3 : IGBT gate interrupt / fault signal generation. P4 : IGBT is slowly turned off. P5 : IGBT OFF signal. P6 : IGBT ON signal: but IGBT cannot be turned on during the fault output activation. P7 : IGBT OFF state. 

P8 : Fault output reset and normal operation start. 

## **Figure 8. Over-Current Protection** 

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Vac<br>+5 V<br>VTH<br>RTH ThermistorNTC PR<br>CSC CSC S<br>MCU CFOD CFOD R<br>VFO VFO 3-Phase Inverter<br>or<br>IN(S) IN(S) OUT(S)<br>Controller IN(R) IN(R) N<br>COM OUT(R) Shunt NSENSE<br>COM Resistor<br>VCC VCC VAC-<br>**----- End of picture text -----**<br>


**Figure 9. Application Example** 

## **Notes:** 

6. For the over-current protection, please set time constant in the range  3 ~ 4 s. 

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©2011 Fairchild Semiconductor Corporation FPDB40PH60B Rev. C3 

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## **Detailed Package Outline Drawings** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:_ 

_http://www.fairchildsemi.com/dwg/MO/MOD27BA.pdf_ 

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©2011 Fairchild Semiconductor Corporation 11 FPDB40PH60B Rev. C3 

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ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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