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FPAB20BH60B
Intelligent Power Module (IPM), IGBT, 600 V, 20 A, 2.5 kV, SPMIC, SPM3
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- Manufacturer: ONSEMI
- Product type: Intelligent Power Modules
- SVHC: No SVHC (25-Jun-2025)
- IPM Series: SPM3
- Product Range: SPM 3 Series
- IPM Case Style: SPMIC
- IPM Power Device: IGBT
- Isolation Voltage: 2.5kV
- Current Rating (Ic / Id): 20A
- Voltage Rating (Vces / Vdss): 600V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 9.07 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. December 2013 ## **FPAB20BH60B** ## **PFC SPM[®] 3 Series for Single-Phase Boost PFC** ## **Features** - UL Certified No. E209204 (UL1557) - 600 V - 20 A Single-Phase Boost PFC with Integral Gate Driver and Protection - Very Low Thermal Resistance Using Al2O3 DBC Substrate - Full-Wave Bridge Rectifier and High-Performance Output Diode - Built-in NTC Thermistor for Temperature Monitoring - Optimized for 20kHz Switching Frequency - Isolation Rating: 2500 Vrms/min. ## **General Description** The FPAB20BH60B is an advanced PFC SPM **[®]** 3 module providing a fully-featured, high-performance Boost PFC (Power Factor Correction) input power stage for consumer, medical, and industrial applications. These modules integrate optimized gate drive of the built-in IGBT to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockout, over-current shutdown, thermal monitoring, and fault reporting. These modules also feature a full-wave rectifier, and high-performance output diode for additional space savings and mounting convenience. ## **Applications** - Single-Phase Boost PFC Converter ## **Related Source** - _AN-9090 - PFC SPM 3 Series User’s Guide_ - _AN-9091 - Boost PFC Inductor Design Guide_ **Figure 1. Package Overview** ## **Package Marking & Ordering Information** |**Device**|**Device Marking**|**Package**|**Packing Type**|**Quantity**| |---|---|---|---|---| |FPAB20BH60B|FPAB20BH60B|SPMIC-027|Rail|10| 1 ©2010 Fairchild Semiconductor Corporation FPAB20BH60B Rev. C4 www.fairchildsemi.com **==> picture [433 x 546] intentionally omitted <==** **----- Start of picture text -----**<br> Integrated Power Functions<br>• PFC converter for single-phase AC / DC power conversion (please refer to Figure 3)<br>Integrated Drive, Protection, and System Control Functions<br>• For IGBTs: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection<br>• Fault signal: corresponding to OC and UV fault<br>• Built-in thermistor: temperature monitoring<br>• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input<br>Pin Configuration<br>Top View<br>12.205<br>(1)VCC<br>(2)COM (21)P<br>(3)COM<br>(4)COM (22)P<br>(5)IN<br>(6)VFO<br>(23)N.C<br>(7)CFOD<br>(8)CSC<br>(9)RTH<br>(10)VTH (24)L Case Temperature (TC)<br>(11)N.C Detecting Point<br>(12)N.C<br>(13)N (25)PR<br>(14)N<br>(15)N<br>(16)N<br>(26)R<br>(17)NR<br>(18)NR DBC Substrate<br>(19)NR<br>(20)NR (27)S<br> Figure 2. Top View<br>Notes :<br>1. For the measurement point of case temperature(TC), please refer to Figure 2.<br>18.345<br>**----- End of picture text -----**<br> **==> picture [130 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> ©2010 Fairchild Semiconductor Corporation<br>FPAB20BH60B Rev. C4<br>**----- End of picture text -----**<br> **==> picture [254 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 2 www.fairchildsemi.com<br>**----- End of picture text -----**<br> ## **Pin Descriptions** |**Pin Number**|**Pin Name**|**Pin Description**| |---|---|---| |1|VCC|Common Bias Voltage for IC and IGBT Driving| |2,3,4|COM|Common Supply Ground| |5|IN|Signal Input for IGBT| |6|VFO|Fault Output| |7|CFOD|Capacitor for Fault Output Duration Selection| |8|CSC|Capacitor (Low-Pass Filter) for Over-Current Detection| |9|R(TH)|Series Resistor for The Use of Thermistor| |10|V(TH)|Thermistor Bias Voltage| |11,12|N.C|No Connection*| |13~16|N|IGBT Emitter| |17~20|NR|Negative DC-Link of Rectifier| |21,22|P|Positive Rail of DC-Link| |23|N.C|No Connection| |24|L|Reactor Connection Pin| |25|PR|Positive DC-Link of Rectifier| |26|R|AC Input for R-Phase| |27|S|AC Input for S-Phase| - 11th and 12th pins are cut. Please refer to package outline drawings for more detail. ## **Internal Equivalent Circuit and Input/Output Pins** **==> picture [285 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> (10) VTH<br>ThermistorNTC (21,22) P<br>(9) RTH<br>(8) CSC CSC<br>(7) CFOD CFOD (24) L<br>(6) VFO VFO<br>(25) PR<br>(5) IN IN OUT<br>(26) R<br>(2~4) COM COM<br>(27) S<br>(1) VCC VCC<br>(13~16) N<br>(17~20) NR<br>**----- End of picture text -----**<br> **Figure 3. Internal Block Diagram** **==> picture [254 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 3 www.fairchildsemi.com<br>**----- End of picture text -----**<br> ©2010 Fairchild Semiconductor Corporation FPAB20BH60B Rev. C4 **Absolute Maximum Ratings** (TJ = 25°C, unless otherwise specified.) **Converter Part** |**Symbol**|**Item**|**Condition**|**Condition**|**Condition**|**Rating**|**Rating**|**Unit**| |---|---|---|---|---|---|---|---| |Vi|Supply Voltage|Applied between R - S|||264||Vrms| |Vi(Surge)|Supply Voltage (Surge)|Applied between R - S|||500||V| |VPN|Output Voltage|Applied between P - N|||450||V| |VPN(Surge)|Output Voltage (Surge)|Applied between P - N|||500||V| |VCES|Collector - Emitter Voltage||||600||V| |IC|Each IGBT Collector Current|TC= 25°C, TJ< 150°C|||20||A| |ICP|Each IGBT Collector Current (Peak)|TC= 25°C, TJ< 150°C, Under 1ms Pulse Width|||40||A| |PC|Collector Dissipation|TC= 25°C|||89||W| |VRRM|Repititive Peak Reverse Voltage||||600||V| |IFSM|Peak Forward Surge Current|Single Half Sine-Wave|||250||A| |TJ|Operating Junction Temperature||||-40 ~ 150||°C| |**Control Part**|||||||| |**Symbol**|**Item**|**Condition**||**Rating**|||**Unit**| |VCC|Control Supply Voltage|Applied between VCC- COM||20|||V| |VIN|Input Signal Voltage|Applied between IN - COM||-0.3 ~ VCC+0.3|||V| |VFO|Fault Output Supply Voltage|Applied between VFO- COM||-0.3 ~ VCC+0.3|||V| |IFO|Fault Output Current|Sink Current at VFOPin||5|||mA| |VSC|Current Sensing Input Voltage|Applied between CSC- COM||-0.3 ~ VCC+0.3|||V| |**Total System**|||||||| |**Symbol**|**Item**|**Condition**||**Rating**|||**Unit**| |TSTG|Storage Temperature|||-40 ~ 125|||°C| |VISO|Isolation Voltage|60 Hz, Sinusoidal, AC 1 Minute, Connect Pins<br>to Heat Sink Plate||2500|||Vrms| |**Thermal Resistance**|||||||| |**Symbol**|**Item**|**Condition**|**Min.**|**Typ.**||**Max.**|**Unit**| |R(j-c)Q|Junction to Case Thermal Resistance|IGBT|-|-||1.4|°C/W| |R(j-c)F||FRD|-|-||1.4|°C/W| |R(j-c)R||Rectifier (per 1 / 4 module)|-|-||2.1|°C/W| 4 www.fairchildsemi.com ©2010 Fairchild Semiconductor Corporation FPAB20BH60B Rev. C4 **Electrical Characteristics** (TJ = 25°C, unless otherwise specified.) ## **Converter Part** |**Symbol**|**Item**|**Condition**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |VCE(SAT)|IGBT Saturation Voltage|VCC= 15 V, VIN= 5 V, IC= 20 A|-|2.3|3.0|V| |VFF|FRD Forward Voltage|IF= 20 A|-|1.8|2.5|V| |VFR|Rectifier Forward Voltage|IF= 20 A|-|1.2|1.5|V| |tON|Switching Times|VPN= 400 V, VCC= 15V, IC= 20 A<br>VIN= 0 V5 V, Inductive Load<br>(Note 2)|-|450|-|ns| |tC(ON)|||-|200|-|ns| |tOFF|||-|350|-|ns| |tC(OFF)|||-|80|-|ns| |trr|||-|70|-|ns| |Irr|||-|6|-|A| |ICES|Collector - Emitter<br>Leakage Current|VCE= VCES|-|-|250|A| ## **Notes:** 2. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. **==> picture [429 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> I<br>rr<br>100% of IC 120% of IC<br>V I<br>CE C<br>90% of IC<br>15% of VCE 10% of IC<br>I 10% of IC V 15% of VCE<br>C CE<br>VIN VIN<br>tON trr tC(OFF)<br>t t<br>C(ON) OFF<br>(a) Turn-on (b) Turn-off<br>**----- End of picture text -----**<br> ## **==> picture [130 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> ©2010 Fairchild Semiconductor Corporation<br>**----- End of picture text -----**<br> **==> picture [254 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 5 www.fairchildsemi.com<br>**----- End of picture text -----**<br> **==> picture [81 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> FPAB20BH60B Rev. C4<br>**----- End of picture text -----**<br> |**Control Part**|**Control Part**|**Control Part**|**Control Part**|||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| |**Symbol**|**Item**|||**Condition**|||||||**Min.**|**Typ. **|**Max.**|**Unit**| |IQCCL|Quiescent VCCSupply Current|||VCC= 15 V, IN = 0 V||||VCC- COM|||-|-|26|mA| |VFOH|Fault Output Voltage|||VSC= 0 V, VFOCircuit: 4.7 kto 5 V Pull-up|||||||4.5|-|-|V| |VFOL||||VSC= 1 V, VFOCircuit: 4.7 kto 5 V Pull-up|||||||-|-|0.8|V| |VSC(ref)|Over-Current Trip Level|||VCC= 15 V|||||||0.45|0.5|0.55|V| |UVCCD|Supply Circuit Under-Voltage<br>Protection|||Detection Level|||||||10.7|11.9|13.0|V| |UVCCR||||Reset Level|||||||11.2|12.4|13.2|V| |tFOD|Fault-Out Pulse Width|||CFOD= 33 nF (Note 3)|||||||1.4|1.8|2.0|ms| |VIN(ON)|ON Threshold Voltage|||Applied between IN - COM|||||||2.8|-|-|V| |VIN(OFF)|OFF Threshold Voltage||||||||||-|-|0.8|V| |RTH|Resistance of Thermistor|||@ TTH= 25°C (Note 4, Figure 5)|||||||-|47.0|-|k| |||||@ TTH= 100°C (Note 4, Figure 5)|||||||-|2.9|-|k| |**Notes:**<br>3. The fault-out pulse width tFOD <br>4. TTH is the temperature of know<br>0<br>0<br>50<br>100<br>150<br>200<br>**Resistance RTH[k****]**||depends on the capacitance value of CFODaccording to the following approximate equation: CFOD=<br>case temperature(TC), please make the experiment considering your application.|||||||||18.3 x 10-6x tFOD[F].<br>125<br>125<br><br><br>X|||| |||||||**R-T Curve**||||||||| |||MIN<br> TYP<br> MAX|95<br>1<br>2<br>3<br>4<br>**Resistance RTH[k****]**||||||||125<br><br><br>X|||| |||||||||||MIN<br> TYP<br> MA|X|||| |||||||1|00<br>1|05<br>110<br>115<br>120<br>**Temperature T**~~**TH**~~**[**<br>**]**<br>℃||||||| |||||||||||||||| |||25<br>50<br>75<br>100<br>**Temperature TTH[**<br>**]**<br>℃||||||||||||| **Figure 5. R-T Curve of the Built-In Thermistor** 6 www.fairchildsemi.com FPAB20BH60B Rev. C4 ©2010 Fairchild Semiconductor Corporation ## **Recommended Operating Condition** |**Symbol**|**Item**|**Condition**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |Vi|Input Supply Voltage<br>A|pplied between R - S|187|220|253|Vrms| |VPN|Output Voltage<br>A|pplied between P - N|-|380|400|V| |VCC|Control Supply Voltage<br>A|pplied between VCC(L)- COM|13.5|15.0|16.5|V| |dVCC/dt|Control Supply Variation||-1|-|1|V/s| |fPWM|PWM Input Frequency<br>T|J 150°C|-|20|-|kHz| |Ii|Allowable Input Current<br>T<br>|C< 90°C, Vi= 220 V, VPN= 380 V<br>VPWM= 20 kHz|-|-|20|Apeak| ## **Mechanical Characteristics and Ratings** |**Item**|**Condition**|**Condition**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |Mounting Torque|Mounting Screw: M3<br>R|ecommended 0.62 N•m|0.51|0.62|0.72|N•m| |Device Flatness|See Figure 6||0|-|+120|m| |Weight|||-|15.00|-|g| **==> picture [196 x 145] intentionally omitted <==** **----- Start of picture text -----**<br> (+)<br>(+)<br>(+)<br>**----- End of picture text -----**<br> **Figure 6. Flatness Measurement Position** **==> picture [130 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> ©2010 Fairchild Semiconductor Corporation<br>FPAB20BH60B Rev. C4<br>**----- End of picture text -----**<br> **==> picture [254 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 7 www.fairchildsemi.com<br>**----- End of picture text -----**<br> ## **Time Charts of Protective Function** **==> picture [386 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> Input Signal<br>Internal IGBT<br>P3<br>Gate-Emitter Voltage<br>UV<br>P5<br>reset<br>Control Supply Voltage UV P2<br>detect<br>P6<br>P1<br>Output Current<br>Fault Output Signal P4<br>P1 : Normal operation: IGBT ON and conducting current<br>P2 : Under-voltage detection<br>P3 : IGBT gate interrupt<br>P4 : Fault signal generation<br>P5 : Under-voltage reset<br>P6 : Normal operation: IGBT ON and conducting current<br>**----- End of picture text -----**<br> **==> picture [144 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Under-Voltage Protection<br>**----- End of picture text -----**<br> **==> picture [394 x 294] intentionally omitted <==** **----- Start of picture text -----**<br> P 5<br>In p u t S ig n a l<br>P 6<br>In te rn a l IG B T<br>G a te -E m itte r V o lta g e<br>O C D e te c tio n<br>P 1<br>P 4<br>O u tp u t C u rre n t P 7<br>P 2<br>O C R e fe re n c e<br>V o lta g e (0 .5 V )<br>S e n s in g V o lta g e<br>R C F ilte r D e la y<br>P 8<br>F a u lt O u tp u t S ig n a l P 3<br>P1 : Normal operation: IGBT ON and conducting current<br>P2 : Over current detection<br>P3 : IGBT gate interrupt / fault signal generation<br>P4 : IGBT is slowly turned off<br>P5 : IGBT OFF signal<br>P6 : IGBT ON signa: but IGBT cannot be turned on during the fault output activation<br>P7 : IGBT OFF state<br>P8 : Fault output reset and normal operation start<br>**----- End of picture text -----**<br> **==> picture [137 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 8. Over-Current Protection<br>**----- End of picture text -----**<br> 8 www.fairchildsemi.com ©2010 Fairchild Semiconductor Corporation FPAB20BH60B Rev. C4 **==> picture [428 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> +5 V<br>VTH<br>RTH ThermistorNTC P<br>+5 V CSC L<br>CSC<br>CFOD CFOD PR<br>VFO<br>PFC VFO R<br>Controller<br>IN OUT S VAC<br>IN<br>COM<br>COM<br>VCC<br>+15 V VCC<br>N NR<br> Fig. 9. Application Example<br>Notes:<br>5. Each capacitors should be located as close to PFC SPM [®] product pins as possible.<br>**----- End of picture text -----**<br> **==> picture [192 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 6. It’s recommended that anti-parallel diode should be connected with IGBT.<br>**----- End of picture text -----**<br> **==> picture [130 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> ©2010 Fairchild Semiconductor Corporation<br>FPAB20BH60B Rev. C4<br>**----- End of picture text -----**<br> **==> picture [254 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 9 www.fairchildsemi.com<br>**----- End of picture text -----**<br> ## **Detailed Package Outline Drawings** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions, specifically the the warranty therein, which covers Fairchild products._ _Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MO/MOD27BE.pdf_ ©2010 Fairchild Semiconductor Corporation **==> picture [256 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 10 www.fairchildsemi.com<br>**----- End of picture text -----**<br> FPAB20BH60B Rev. C4 **==> picture [12 x 351] intentionally omitted <==** **----- Start of picture text -----**<br> FPAB20BH60B PFC SPM® 3 Series for Single-Phase Boost PFC<br>**----- End of picture text -----**<br> ©2010 Fairchild Semiconductor Corporation 11 FPAB20BH60B Rev. C4 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **N. 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Updated at April 27, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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