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FP75R17N3E4B20BPSA1
IGBT Module, 75 A, 1.95 V, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPIM 3 Series
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: -
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Saturation Voltage: 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 88.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FP75R17N3E4_B20 EconoPIM[™] 3 module** _ ## **EconoPIM[™] 3 module with Trench/Fieldstop IGBT4 and emitter controlled diode and NTC** ## **Features** - Electrical features - VCES = 1700 V - IC nom = 75 A / ICRM = 150 A - Low V CE,sat - Trench IGBT 4 - VCE,sat with positive temperature coefficient - 2.2 kV rectifier diodes - Mechanical features - Solder contact technology - Standard housing - Integrated NTC temperature sensor - Isolated base plate ## **Potential applications** - Motor drives ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2024-07-03 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, Rectifier**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**IGBT, Brake-Chopper**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**Diode, Brake-Chopper**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**8**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |**9**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| |**10**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16| |**11**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| Datasheet Revision 1.00 2024-07-03 2 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** ## **Insulation coordination** |||||||| |---|---|---|---|---|---|---| |**Table 1**<br>**Insulation coordin**||**ation**||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 60 s|||3.4|kV| |Material of module<br>baseplate|||||Cu|| |Internal isolation||basic insulation (class 1, IEC 61140)|||Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|||10.0|mm| |Clearance|_d_Clear|terminal to heatsink|||7.5|mm| |Comparative tracking<br>index|_CTI_||||> 200|| |Relative thermal index<br>(electrical)|_RTI_|housing|||140|°C| |Clearance<br>_d_Clear<br>terminal to heatsink<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Clearance<br>_d_Clear<br>terminal to heatsink<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Clearance<br>_d_Clear<br>terminal to heatsink<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|Clearance<br>_d_Clear<br>terminal to heatsink<br>Comparative tracking<br>index<br>_CTI_<br>Relative thermal index<br>(electrical)<br>_RTI_<br>housing|7.5<br>mm<br>> 200<br>140<br>°C|7.5<br>mm<br>> 200<br>140<br>°C|7.5<br>mm<br>> 200<br>140<br>°C|7.5<br>mm<br>> 200<br>140<br>°C| |---|---|---|---|---|---|---|---| |**Table 2**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE||||40||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TC=25°C, per switch|||3||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC=25°C, per switch|||4||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|3||6|Nm| |Weight|_G_||||300||g| _**Note** : The current under continuous operation is limited to 50 A rms per connector pin._ ## **2 IGBT, Inverter** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1700|V| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_C= 100 °C|75|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||150|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet Revision 1.00 2024-07-03 3 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 75 A,_V_GE= 15 V|_T_vj= 25 °C||1.95|2.30|V| ||||_T_vj= 125 °C||2.35||| ||||_T_vj= 150 °C||2.45||| |Gate threshold voltage|_V_GEth|_I_C= 3 mA, VCE= VGE,_T_vj= 25 °C||5.25|5.80|6.35|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 900 V|||0.9||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||8.5||Ω| |Input capacitance|_C_ies|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||6.8||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.22||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1700 V,_V_GE= 0 V|_T_vj= 25 °C|||1|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 4.3 Ω|_T_vj= 25 °C||0.230||µs| ||||_T_vj= 125 °C||0.250||| ||||_T_vj= 150 °C||0.260||| |Rise time (inductive load)|_t_r|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 4.3 Ω|_T_vj= 25 °C||0.036||µs| ||||_T_vj= 125 °C||0.040||| ||||_T_vj= 150 °C||0.045||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 4.3 Ω|_T_vj= 25 °C||0.460||µs| ||||_T_vj= 125 °C||0.600||| ||||_T_vj= 150 °C||0.640||| |Fall time (inductive load)|_t_f|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 4.3 Ω|_T_vj= 25 °C||0.080||µs| ||||_T_vj= 125 °C||0.150||| ||||_T_vj= 150 °C||0.160||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 75 A,_V_CC= 900 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 4.3 Ω, di/dt =<br>2150 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||13.1||mJ| ||||_T_vj= 125 °C||18.8||| ||||_T_vj= 150 °C||20.2||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 75 A,_V_CC= 900 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 4.3 Ω, dv/dt =<br>3000 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||14.7||mJ| ||||_T_vj= 125 °C||25.2||| ||||_T_vj= 150 °C||28.4||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 1000 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 10 µs,<br>_T_vj≤ 150 °C||350||A| ## **(table continues...)** Datasheet Revision 1.00 2024-07-03 4 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT|||0.327|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 1 W/(m·K)||0.0678||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||150|°C| ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1700|V| |Continuous DC forward<br>current|_I_F|||75|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||150|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|1350|A²s| ||||_T_vj= 150 °C|1150|| |**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 75 A,_V_GE= 0 V|_T_vj= 25 °C||1.80|2.20|V| ||||_T_vj= 125 °C||1.90||| ||||_T_vj= 150 °C||1.95||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 900 V,_I_F= 75 A,<br>_V_GE= -15 V, -diF/dt =<br>2150 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||105||A| ||||_T_vj= 125 °C||125||| ||||_T_vj= 150 °C||130||| |Recovered charge|_Q_r|_V_CC= 900 V,_I_F= 75 A,<br>_V_GE= -15 V, -diF/dt =<br>2150 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||13.5||µC| ||||_T_vj= 125 °C||25.4||| ||||_T_vj= 150 °C||29.4||| |Reverse recovery energy|_E_rec|_V_CC= 900 V,_I_F= 75 A,<br>_V_GE= -15 V, -diF/dt =<br>2150 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||8.6||mJ| ||||_T_vj= 125 °C||17.2||| ||||_T_vj= 150 °C||20.2||| **(table continues...)** Datasheet Revision 1.00 2024-07-03 5 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, Rectifier** |**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**|**Table 6**<br>**(continued) Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Thermal resistance,<br>junction to case|_R_thJC|per diode|||0.529|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 1 W/(m·K)||0.0730||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||150|°C| ## **4 Diode, Rectifier** |**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**|||| |---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|2200|V| |Maximum RMS forward<br>current per chip|_I_FRMSM|_T_C= 105 °C||81|A| |Maximum RMS current at<br>rectifier output|_I_RMSM|_T_C= 105 °C||140|A| |Surge forward current|_I_FSM|_t_P= 10 ms|_T_vj= 25 °C|670|A| ||||_T_vj= 125 °C|585|| ||||_T_vj= 150 °C|540|| |I2t - value|_I_2_t_|_t_P= 10 ms|_T_vj= 25 °C|2240|A²s| ||||_T_vj= 125 °C|1710|| ||||_T_vj= 150 °C|1460|| |**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|**Table 8**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 75 A|_T_vj= 25 °C||1.15||V| ||||_T_vj= 125 °C||1.10||| ||||_T_vj= 150 °C||1.10||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.651|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 1 W/(m·K)|||0.0800||K/W| |Temperature under<br>switching conditions|_T_vj, op|||-40||150|°C| Datasheet Revision 1.00 2024-07-03 6 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 IGBT, Brake-Chopper** ## **5 IGBT, Brake-Chopper** |**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**||||| |---|---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C||1700|V| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_C= 100 °C||75|A| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op|||150|A| |Gate-emitter peak voltage|_V_GES||||±20|V| |**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|**Table 10**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 75 A,_V_GE= 15 V|_T_vj= 25 °C||1.95|2.30|V| ||||_T_vj= 125 °C||2.35||| ||||_T_vj= 150 °C||2.45||| |Gate threshold voltage|_V_GEth|_I_C= 3 mA, VCE= VGE,_T_vj= 25 °C||5.25|5.80|6.35|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 900 V|||0.9||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||8.5||Ω| |Input capacitance|_C_ies|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||6.8||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 1000 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.22||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1700 V,_V_GE= 0 V|_T_vj= 25 °C|||1|mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 4.3 Ω|_T_vj= 25 °C||0.230||µs| ||||_T_vj= 125 °C||0.250||| ||||_T_vj= 150 °C||0.260||| |Rise time (inductive load)|_t_r|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 4.3 Ω|_T_vj= 25 °C||0.036||µs| ||||_T_vj= 125 °C||0.040||| ||||_T_vj= 150 °C||0.045||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 4.3 Ω|_T_vj= 25 °C||0.460||µs| ||||_T_vj= 125 °C||0.600||| ||||_T_vj= 150 °C||0.640||| ## **(table continues...)** Datasheet Revision 1.00 2024-07-03 7 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, Brake-Chopper** |**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**|**Table 10**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Fall time (inductive load)|_t_f|_I_C= 75 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 4.3 Ω|_T_vj= 25 °C||0.080||µs| ||||_T_vj= 125 °C||0.150||| ||||_T_vj= 150 °C||0.160||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 75 A,_V_CC= 900 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 4.3 Ω, di/dt =<br>2150 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||13||mJ| ||||_T_vj= 125 °C||19||| ||||_T_vj= 150 °C||20||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 75 A,_V_CC= 900 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 4.3 Ω, dv/dt =<br>3000 V/µs (Tvj= 150 °C)|_T_vj= 25 °C||14.5||mJ| ||||_T_vj= 125 °C||25.2||| ||||_T_vj= 150 °C||28.5||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 1000 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 10 µs,<br>_T_vj≤ 150 °C||350||A| |Thermal resistance,<br>junction to case|_R_thJC|per IGBT||||0.327|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per IGBT,λgrease= 1 W/(m·K)|||0.0678||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **6 Diode, Brake-Chopper** |**6**<br>**Diode, Brake-Chopper**|**6**<br>**Diode, Brake-Chopper**|**6**<br>**Diode, Brake-Chopper**|||| |---|---|---|---|---|---| |**Table 11**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1700|V| |Continuous DC forward<br>current|_I_F|||50|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||100|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|310|A²s| ||||_T_vj= 150 °C|260|| Datasheet Revision 1.00 2024-07-03 8 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **7 NTC-Thermistor** |**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|**Table 12**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 50 A,_V_GE= 0 V|_T_vj= 25 °C||1.80|2.20|V| ||||_T_vj= 125 °C||1.90||| ||||_T_vj= 150 °C||1.95||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 900 V,_I_F= 50 A,<br>_V_GE= -15 V, -diF/dt =<br>1500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||55||A| ||||_T_vj= 125 °C||64||| ||||_T_vj= 150 °C||68||| |Recovered charge|_Q_r|_V_CC= 900 V,_I_F= 50 A,<br>_V_GE= -15 V, -diF/dt =<br>1500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||15||µC| ||||_T_vj= 125 °C||21.3||| ||||_T_vj= 150 °C||24.3||| |Reverse recovery energy|_E_rec|_V_CC= 900 V,_I_F= 50 A,<br>_V_GE= -15 V, -diF/dt =<br>1500 A/µs (Tvj= 150 °C)|_T_vj= 25 °C||10||mJ| ||||_T_vj= 125 °C||13.5||| ||||_T_vj= 150 °C||16||| |Thermal resistance,<br>junction to case|_R_thJC|per diode||||0.692|K/W| |Thermal resistance, case to<br>heat sink|_R_thCH|per diode,λgrease= 1 W/(m·K)|||0.0840||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||150|°C| ## **7 NTC-Thermistor** |**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 13**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _**Note** : Specification according to the valid application note._ Datasheet Revision 1.00 2024-07-03 9 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **8 Characteristics diagrams** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Output characteristic (typical), IGBT, Inverter** IC = f(VCE) ## VGE = 15 V **Output characteristic field (typical), IGBT, Inverter** IC = f(VCE) T = 150 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 150 150<br>135 135<br>120 120<br>105 105<br>90 90<br>75 75<br>60 60<br>45 45<br>30 30<br>15 15<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Transfer characteristic (typical), IGBT, Inverter Switching losses (typical), IGBT, Inverter<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 4.3 Ω, RGon = 4.3 Ω, VCC = 900 V, VGE = ± 15 V<br>150 60<br>55<br>135<br>50<br>120<br>45<br>105<br>40<br>90<br>35<br>75 30<br>25<br>60<br>20<br>45<br>15<br>30<br>10<br>15<br>5<br>0 0<br>5 6 7 8 9 10 11 12 13 0 15 30 45 60 75 90 105 120 135 150<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-03 10 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Switching losses (typical), IGBT, Inverter** E = f(RG) ## IC = 75 A, VCC = 900 V, VGE = ± 15 V ## **Reverse bias safe operating area (RBSOA), IGBT, Inverter** IC = f(VCE) RGoff = 4.3 Ω, VGE = ±15 V, Tvj = 150 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 6 12 18 24 30 36 42<br>**----- End of picture text -----**<br> **Transient thermal impedance, IGBT, Inverter** Zth = f(t) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 200 400 600 800 1000 1200 1400 1600 1800<br>**----- End of picture text -----**<br> **Forward characteristic (typical), Diode, Inverter** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>135<br>120<br>105<br>90<br>75<br>60<br>45<br>30<br>15<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-03 11 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Switching losses (typical), Diode, Inverter** Erec = f(IF) RGon = RGon(IGBT) , VCC = 900 V **Switching losses (typical), Diode, Inverter** Erec = f(RG) IF = 75 A, VCC = 900 V **==> picture [540 x 557] intentionally omitted <==** **----- Start of picture text -----**<br> 40 22<br>21<br>35<br>20<br>30 19<br>18<br>25<br>17<br>20 16<br>15<br>15<br>14<br>10 13<br>12<br>5<br>11<br>0 10<br>0 15 30 45 60 75 90 105 120 135 150 0 6 12 18 24 30 36 42<br>Transient thermal impedance, Diode, Inverter Forward characteristic (typical), Diode, Rectifier<br>Zth = f(t) IF = f(VF)<br>1 150<br>135<br>120<br>105<br>90<br>0.1 75<br>60<br>45<br>30<br>15<br>0.01 0<br>0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.5 0.7 0.9 1.1 1.2 1.4 1.6<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-03 12 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Transient thermal impedance, Diode, Rectifier** Zth = f(t) **Output characteristic (typical), IGBT, Brake-Chopper** IC = f(VCE) VGE = 15 V **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 1 150<br>135<br>120<br>105<br>90<br>0.1 75<br>60<br>45<br>30<br>15<br>0.01 0<br>0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>Output characteristic field (typical), IGBT, Brake- Transfer characteristic (typical), IGBT, Brake-Chopper<br>Chopper IC = f(VGE)<br>IC = f(VCE) VCE = 20 V<br>T = 150 °C<br>vj<br>150 150<br>135 135<br>120 120<br>105 105<br>90 90<br>75 75<br>60 60<br>45 45<br>30 30<br>15 15<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 6 7 8 9 10 11 12 13<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-03 13 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **Transient thermal impedance, IGBT, Brake-Chopper** Zth = f(t) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **Transient thermal impedance, Diode, Brake-Chopper** Zth = f(t) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **==> picture [226 x 38] intentionally omitted <==** **----- Start of picture text -----**<br> Forward characteristic (typical), Diode, Brake-<br>Chopper<br>IF = f(VF)<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br> **Temperature characteristic (typical), NTC-Thermistor** R = f(TNTC) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>10000<br>1000<br>100<br>0 25 50 75 100 125 150<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-03 14 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Circuit diagram** **==> picture [167 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 9 Circuit diagram<br>**----- End of picture text -----**<br> **==> picture [8 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> ## **Figure 1** Datasheet Revision 1.00 2024-07-03 15 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **10 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **10 Package outlines** **==> picture [363 x 616] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>122 ` 0,5<br>According to Application Note<br>E<br>j n 0,3 A B C<br>(28,75)<br>25<br>Y<br>X<br>0<br>25<br>(28,75)<br>B<br>D ( n 5,5) j n 0,3 A D E<br>2x<br>j n 0,3 A B C 110 ` 0,1 Distance of threaded holes in heatsink<br>A<br>j 0,5 A<br>4x<br>j 1 A c 0,3 CZ<br>35x j 0,7 A<br>according to screw head washer<br>according to screw head<br>29,21 29 28 27 26 25 24 23 22 21 20 19 18<br>28,75<br>25<br>13,34 30<br>9,53 31 17<br>5,72 32 16<br>0<br>5,72 33 15<br>9,53 34 14<br>13,34 35 13<br>25<br>28,75<br>29,21 1 2 3 4 5 6 7 8 9 10 11 12<br>Tolerance of PCB hole pattern j n 0,1<br>For PressFIT pin: Details about hole specification for contacts refer to AN2007-09<br>For Solderpin: Details about hole specification for contacts refer to AN2017-03<br>Dimensions according to ISO 14405 GG (Method of least squares (LSQ)).<br>Reference D and E defined with GG<br>ISO 8015 - Independency principle<br>120,8305<br>( n<br>5,5)<br>( n<br>5,5)<br>24,444°<br>55 (47,25) 0 (47,25) 55<br>0,5<br> ` 0,5<br>62,5 62 `<br>0,1 Distance of threaded holes in heatsink<br> `<br>50<br>6,85<br>21,5 17<br>59,06 55 47,25 41,91 40,01 38,1 36,2 26,67 24,77 22,86 20,96 11,43 9,53 7,62 5,72 0 3,81 5,72 7,62 9,53 11,43 13,34 24,77 28,58 32,39 34,29 38,1 41,91 47,25 55 59,06<br>W00195438.09<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2024-07-03 16 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **11 Module label code** ## **11 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2024-07-03 17 **FP75R17N3E4_B20 EconoPIM[™] 3 module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2021-12-16|Initial version| |1.00|2024-07-03|Final datasheet| Datasheet Revision 1.00 2024-07-03 18 ## 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Updated at April 28, 2026
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