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FP75R12KT4B11BOSA1
IGBT Module, PIM Three Phase Input Rectifier, 75 A, 1.85 V, 385 W, 150 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:385W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPIM 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 385W
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 75A
- Power Dissipation Pd: 385W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 74.55 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules ## FP75R12KT4_B11 VCES = 1200V IC nom = 75A / ICRM = 150A **典型应用** • 辅助逆变器 • 电机传动 - 伺服驱动器 - - - ## **电气特性** - 低开关损耗 - T - VCEsat - CEsat - - T yop = - • VCEsat with • Low V CEsat ## **机械特性** - 高功率循环和温度循环能力 - • 集成NTC温度传感器 • 铜基板 - - 标封装 - - - - - 1 技术信息�/�Technical�Information IGBT-模块 IGBT-modules FP75R12KT4_B11 **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values** |技术信息/TechnicalInformation<br>FP75R12KT4_B11<br>IGBT-模块<br>IGBT-modules|| |---|---| |preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-29<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>75<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>150<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>385<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>IC= 75 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 2,40 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,57<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>10<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>4,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,16<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,1Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>td off<br>0,34<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 75 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,1Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 2500 A/µs (Tvj= 150°C)<br>RGon= 1,1Ω<br>Eon<br>3,10<br>6,60<br>7,65<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 75 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 1,1Ω<br>Eoff<br>4,20<br>6,40<br>7,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>270<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,39<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,13<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 IGBT-模块 IGBT-modules FP75R12KT4_B11 ## 技术信息�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **二极管,逆变器�/�Diode,�Inverter** ## **最大额定值�/�Maximum�Rated�Values** |反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |连续正向直流电流<br>ContinuousDCforwardcurrent||IF|75|||A| |正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|150|||A| |I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|960|||A²s| |**特征值/CharacteristicValues**|||min.|typ.|max.|| |正向电压<br>Forwardvoltage|IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>IF= 75 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V| |反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||88,0<br>89,0<br>90,0||A<br>A<br>A| |恢复电荷<br>Recoveredcharge|IF= 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||7,30<br>13,0<br>14,5||µC<br>µC<br>µC| |反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 75 A, - diF/dt = 2500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||2,65<br>4,60<br>5,65||mJ<br>mJ<br>mJ| |结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,62|K/W| |外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,205||K/W| |在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values** |反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V| |---|---|---|---|---|---|---| |最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|80|||A| |最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|140|||A| |正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|600<br>470|||A<br>A| |I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1800<br>1100|||A²s<br>A²s| |**特征值/CharacteristicValues**|||min.|typ.|max.|| |正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 75 A|VF||1,15||V| |反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA| |结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,65|K/W| |外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,215||K/W| |在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| |preparedby:AS|dateofpublication:2013-10-29| |---|---| |approvedby:RS|revision:3.0| 3 技术信息�/�Technical�Information IGBT-模块 IGBT-modules FP75R12KT4_B11 **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** |技术信息/TechnicalInformation<br>FP75R12KT4_B11<br>IGBT-模块<br>IGBT-modules|| |---|---| |preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-29<br>revision:3.0<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>280<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGon= 15Ω<br>Eon<br>5,70<br>7,70<br>8,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGoff= 15Ω<br>Eoff<br>2,80<br>4,30<br>4,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,54<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,245<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 4 IGBT-模块 IGBT-modules FP75R12KT4_B11 ## 技术信息�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values** |反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |连续正向直流电流<br>ContinuousDCforwardcurrent||IF|25|||A| |正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A| |I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>80,0|||A²s<br>A²s| |**特征值/CharacteristicValues**|||min.|typ.|max.|| |正向电压<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,15|V<br>V<br>V| |反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||39,0<br>40,0<br>41,0||A<br>A<br>A| |恢复电荷<br>Recoveredcharge|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,40<br>4,10<br>4,40||µC<br>µC<br>µC| |反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,70||mJ<br>mJ<br>mJ| |结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||1,35|K/W| |外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,61||K/W| |在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **负温度系数热敏电阻�/�NTC-Thermistor** ## **特征值�/�Characteristic�Values** |**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**特征值/CharacteristicValues**|||min.<br>typ.||max.|| |额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| |根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.||||||| prepared�by:�AS date�of�publication:�2013-10-29 approved�by:�RS revision:�3.0 5 IGBT-模块 IGBT-modules ## FP75R12KT4_B11 |#R_<br>| Module||||||| |---|---|---|---|---|---|---| |绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>E44 (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3||kV| |爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0||mm| |电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~||mm| |外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W| |杂散电感,模块||LsCE||40||nH| |模块引线电阻,端子-芯片<br>最大结温<br>terminals ~~- chip~~<br>Maximum junction temperature|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>aE BS<br>ll2)-H WEE /inverter, brake-chopper<br>Ties / rectifier|RCC'+EE'<br>RAA'+CC'<br>4,00<br>3,00<br>Tvj max<br>175<br>150<br>~~tt ff~~||||mΩ<br>°C<br>°C| |在开关状态下温度<br>Temperature under switching conditions|aS3S 2)-4 WEB /inverter, brake-chopper<br>Ties / rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C| |储存温度<br>模块安装的安装扭距<br>~~Storage temperature~~<br>Mounting torque for modul mounting|~~ee ~~<br>$Ree MS~~RIAN~~<br>WAFHT<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm| |重量<br>Weight||G||300||g| 6 ## & / Technical Information ## IGBT-模块 IGBT-modules ## FP75R12KT4_B11 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>150 150<br>Tvj = 25°C VGE = 19V<br>135 | a Tvj = 125°C J ofiat 7 135 e V s GE = 17V | [ov<br>Tvj = 150°C } | VGE = 15V L i ee [tbe]<br>VGE = 13V<br>120 eee | 120 VGE = 11V faneen<br>VGE = 9V<br>ee ee<br>105 105<br>PEEP E LA<br>90 90<br>Pit<br>75 75<br>Age EEE EELey<br>60 Se) seen,t ? 60 i;sane4<br>45 ee ee 45 ee/<br>By see 2a<br>30 30<br>15 15<br>iA]<br>0 0<br>| tT) La<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStt IGBT, HaseS (FAA) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =fil C)<br>VCE =20V VGE =415V,R Gon =11 Ω ,R Goff =1.1 Ω ,V CE =600V<br>150 30<br>Tvj = 25°C Eon, Tvj = 125°C<br>135 Ee Tvj = 125°C Tllif “ || Eoff, Tvj = 125°C -EEEEEFEPt ft tT<br>Tvj = 150°C uw | Eon, Tvj = 150°C Pt tT tT tt<br>25 Eoff, Tvj = 150°C<br>| / i p PtrtT tT<br>120 Jo pt ft ft yt tT tT<br>“ Pot ft ft ft ft fT fT tT tT tT ft ft tT tf<br>105 [ye Pt ft ft ft ft tT tt<br>20<br>90 ptPt ftft ftft tTft fttT tTfT tttf tT tT tT tTYTFY Tf<br>a ee ee eee eee<br>ee<br>75 15<br>eee ee eee<br>60 y; Pt ft ft ft ft ft tT fteetT ereeeA fT eeeT<br>eea eeeee ee ee<br>10<br>45 Pott Yeoe eeeeT<br>a ee ee ee eee<br>30 VA a ee ee ee eee<br>a a2ee<br>5<br>15 | | Jeter [| | Tl ht hE hr hE TT<br>0 ee 0 ee ee eeeee<br>5 6 7 8 9 10 11 12 13 0 20 40 60 80 100 120 140<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 7 IGBT-模块 IGBT-modules ## FP75R12KT4_B11 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =75A,V CE =600V<br>20 1<br>p emmee eeeneeeneeeneen Eon, Tvj = 125°C 02 tll T ZthJC : IGBT F<br>18 ! Eoff, Tvj = 125°C tT ET Tt Ty Tt ee<br>Eon, Tvj = 150°C<br>| Eoff, Tvj = 150°C PET TT er I i i<br>16<br>><br>FEE A yal —T |<br>14<br>Pt tT TT tT tT et tTeePet tt aYo l<br>12 PET TT ET er Cet TT ET I TT /<br>PEt eT ee EEE EE /<br>10 0,1<br>PiU TPP TT TE TE TT Po Ty TT<br>8 ARE eet ett teeth<br>| 4 a|<br>6 | Pati tt teasery 0<br>KF+-4-4-b-b fgets | tA EE<br>Pt Tt TT tT PP a | a ll<br>4<br>Hv | OTT<br>PT TTT TT Te ty Ty yyy yy / i: 1 2 3 4<br>2 r τ ii[K/W]: [s]: 0,0234 0,01 0,1287 0,02 0,1248 0,05 0,1131 0,1<br>0 EeePEP ETPeee 0,01 TINboreTUTETTL r<br>0 2 4 6 8 10 12 14 16 18 20 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RwRELIEK IGBT, #2 ( RBSOA ) Fa mESstt Re ee ( BB)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =+15V,R Goff =1.1 Ω ,T vj =150°C<br>165 150<br>Tvj = 25°C<br>150 135 Tvj = 125°C<br>PoE tT F Tvj = 150°C e<br>135<br>120<br>IC, Modul<br>120 IC, Chip<br>105<br>105<br>90<br>90<br>75<br>75<br>60<br>60<br>45<br>45<br>Soe 30 Sanne /Genen<br>3015 nn 15 eee<br>0 ee ee 0 p wotertT |<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 8 ## IGBT-模块 IGBT-modules ## FP75R12KT4_B11 **==> picture [486 x 605] intentionally omitted <==** **----- Start of picture text -----**<br> E arin rec F) losses Diode, Inverter (typical) E owt rec G losses ) Diode, Inverter (typical)<br>RGon =1.1 Ω ,V CE =600V IF =75A,V CE =600V<br>8 8<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>(a een [a nee nae<br>7 1 e e Oe 7 | c e<br>PT TT TT TT TT | Pe PTT EET EEE EE<br>6 Pt TT TT TP ee 6 PTET ETT EEE EE<br>Pt tt tt | pe PRI TETE TL ETTLT ET ET<br>5 ptf te 5 PP EEE EE<br>Pt | pe ert Tt PAL ETPte<br>4 4<br>Pt EE EE<br>Pt} tertPt eetT ET tt PfELT Pe Petre PyTT<br>3 EERPt ey AREEEeeeeeeEE EE EE 3 PPTPTTETEEETEEE ELLEEEPreeEE<br>2 PT YE | tT tt yyy 2 PTET ETT EEE EE<br>PAA TT PT TET Et PPT TT TEEPE TEE<br>1 PanePt tT TE EEE EEE 1 PPTPTT TTEET TEEPETEEEEE EE<br>0 PT Te ye EE ET TE Et 0 PTT TT EEEPETEE E<br>0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16 18 20<br>IF [A] RG [ Ω ]<br>EAS RB ees FOmEst hE Bis ( BB)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJC =f (t) IF =f(V F)<br>1 150<br>| ZthJC : Diode ee ee el Tvj = 25°C<br>ooofF 135 m—| Tvj = 150°C 1 . 1) 47) 74<br>CrcoiPIE CeoaAT TEoo 120105 SPT| ||TT E | |PFA| fdEf<br>ELM ZEEE LLANE ET Scenes<br>90<br>CAE<br>0,1 75<br>Se ETE AI ttt Ar<br>PLa TA]a 0 | | 60 Po) tf | PER Eff<br>|a 45 Pt tt AR Pf<br>PALME a |<br>30<br>ST ETE EE ET PT | | ft AgT Td de<br>i: 1 2 3 4<br>A r r τ ii[K/W]: [s]: ol 0,0372 0,01 0,2046 0,02 n 0,1984 0,05 l 0,1798 0,1 | ee 15 PEA<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br> 9 ## IGBT-模块 IGBT-modules ## FP75R12KT4_B11 **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IF =f(V F)<br>VGE ts Vv<br>100 45<br>Tvj = 25°C Tvj = 25°C<br>90 Tvj = 125°C 40 Tvj = 125°C<br>F Tvj = 150°C e ee Pe Tvj = 150°C<br>80<br>35<br>70<br>30<br>60<br>25<br>pfpi BRRRREEEP Ane<br>50<br>Le 20 COCA<br>40<br>15<br>30<br>ae BRRREE anne<br>i a 10 vy<br>2010 5 BEREDARRnaE<br>0 oA 0 Le<br>FIAT TTT ee / |<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> **==> picture [240 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>Rtyp<br>q#—( J ree<br>pa | e | | | | | | e| | ft ftee eee<br>SRR eee<br>10000 NERERRRRRREEEE<br>eeee ee<br>pot NO<br>SERNeeeee<br>NSSEE Eee<br>1000 BRRERASGEREEEE<br>Se<br>aeeeeee ee ee ee<br>a a Se<br>100<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130 140<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 10 ## 技术信息�/�Technical�Information IGBT-模块 IGBT-modules FP75R12KT4_B11 **==> picture [86 x 38] intentionally omitted <==** **==> picture [492 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> 接线图�/�circuit_diagram_headline<br>J<br>**----- End of picture text -----**<br> ## **封装尺寸�/�package�outlines** **==> picture [129 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> In fin e o n<br>**----- End of picture text -----**<br> **==> picture [56 x 53] intentionally omitted <==** **==> picture [71 x 68] intentionally omitted <==** **==> picture [319 x 25] intentionally omitted <==** **----- Start of picture text -----**<br> prepared�by:�AS date�of�publication:�2013-10-29<br>approved�by:�RS revision:�3.0<br>**----- End of picture text -----**<br> 11 IGBT-模块 IGBT-modules ## FP75R12KT4_B11 ## **使用条件和条款** 使用条件和条款 产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询 我们负责你的销售部门 如果您想将我们的产品用于航天，健康，危及生命或者生命维持等应用，请申明。 请注意，对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 保留产品规格书的修改权 12
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
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