Image not available
Illustrative purposes only
FP50R12W2T7B11BOMA1
IGBT Module, PIM, 50 A, 1.5 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPIM TRENCHSTOP
- IGBT Technology: IGBT 7 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: PIM
- Transistor Mounting: Panel
- DC Collector Current: 50A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.5V
- Collector Emitter Saturation Voltage Vce(on): 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 34.45 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FP50R12W2T7_B11
VCES = 1200V IC nom = 50A / ICRM = 100A
- Hilfsumrichter
- Klimaanlagen
- • Motorantriebe
- CEsat
- Trenchstop[TM]
-
-
- Al2O3 Substrat mit kleinem thermischen Widerstand
-
-
-
-
-
-
- CEsat
- • Trenchstop[TM]
-
-
- Al2O3
-
-
-
**Digit**
Datasheet www.infineon.com
2020-03-13
FP50R12W2T7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 75°C, Tvj max= 175°C|ICDC|50|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|100|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 50 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,50<br>1,64<br>1,72|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 1,28 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,92||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||11,1||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,039||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,008|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,051<br>0,054<br>0,055||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,027<br>0,028<br>0,029||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,265<br>0,335<br>0,382||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 50 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,111<br>0,185<br>0,277||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 50 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 1700 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||3,24<br>4,49<br>5,21||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 50 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 2900 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 5,1Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||3,84<br>5,54<br>6,63||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||190<br>180||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||0,910||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
2
V�2.0 2020-03-13
Datasheet
FP50R12W2T7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|300<br>250|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,72<br>1,59<br>1,52|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 1700 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||48,2<br>65,5<br>77,8||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 1700 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||4,36<br>7,52<br>9,82||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 1700 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||1,57<br>2,95<br>3,95||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||1,20||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
|**Diode,Gleichrichter/Diode,Rectifier**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||||
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|||V|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TH= 100°C|IFRMSM|<br>50|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TH= 100°C|IRMSM|50|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1010<br>685|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 50 A|VF||1,09||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||0,18||mA|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||1,24||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
3
V�2.0 2020-03-13
Datasheet
FP50R12W2T7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
|**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 80°C, Tvj max= 175°C|ICDC|35|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|70|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 35 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,60<br>1,74<br>1,82|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,75 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,548||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||6,62||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,023||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,005|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 35 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 5,6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,043<br>0,046<br>0,048||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 35 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 5,6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,036<br>0,038<br>0,039||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 35 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 5,6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,24<br>0,31<br>0,34||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 35 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 5,6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,12<br>0,21<br>0,27||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 35 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 590 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 5,6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||2,84<br>3,38<br>3,61||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 35 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 3000 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 5,6Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||2,31<br>3,84<br>4,28||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||110<br>100||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||1,09||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
V�2.0 2020-03-13
Datasheet
4
FP50R12W2T7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|72,5<br>63,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,83<br>1,70<br>1,63|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 570 A/µs (Tvj=175°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||22,2<br>29,2<br>33,9||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 570 A/µs (Tvj=175°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||1,63<br>3,44<br>4,59||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 570 A/µs (Tvj=175°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||0,38<br>1,25<br>1,88||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||2,02||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
V�2.0 2020-03-13
Datasheet
5
FP50R12W2T7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||5,00<br>6,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|40|-|80|N|
|Gewicht<br>Weight||G||39||g|
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25 A rms per connector pin. Tvj op > 150°C ist im Überlastbetrieb zulässig. Detaillierte Angaben sind AN 2018-14 zu entnehmen.
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
6
V�2.0 2020-03-13
Datasheet
FP50R12W2T7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V
**==> picture [237 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>Tvj = 25°C<br>Tvj = 125°C<br>90 T vj = 175°C<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V
**==> picture [236 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>Tvj = 25°C<br>Tvj = 125°C<br>90 T vj = 175°C<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>5 6 7 8 9 10 11 12 13<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C
**==> picture [237 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>VGE = 19V<br>VGE = 17V<br>90 V GE = 15V<br>VGE = 13V<br>VGE = 11V<br>80 V GE = 9V<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0,0 1,0 2,0 3,0 4,0 5,0<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�5.1� Ω ,�RGoff�=�5.1� Ω ,�VCE�=�600�V
**==> picture [238 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
16<br>Eon, Tvj = 125°C<br>Eoff, Tvj = 125°C<br>14 EEonoff, T, Tvjvj = 175°C = 175°C<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 10 20 30 40 50 60 70 80 90 100<br>IC [A]<br>E [mJ]<br>**----- End of picture text -----**<br>
V�2.0 2020-03-13
Datasheet
7
FP50R12W2T7_B11
**==> picture [487 x 310] intentionally omitted <==**
**----- Start of picture text -----**<br>
Eon =f{(R),E G off =f(R G) tdon =f(l)t=f C r C (l),t doff =f(l),t C r =f(l C)<br>VGE =+15V,1 C =50A,V CE =600V VGE =+15V,R Gon =51 Ω ,R Goff =5.1 Ω ,V CE =600V,T vj =175°C<br>35 10<br>ee<br>30 EEEEonoffon off , T, T, T, Tvjvjvj vj = 125°C = 125°C = 175°C = 175°C , i| ttttdon rdofff eea ee<br>1<br>25<br>y, a ee<br>yy, a ei e e ee<br>YY<br>20 YY<br>4<br>YY<br>Y 0,1<br>4<br>7<br>15 4 ——_———— [eee]<br>eee<br>_<br>10 a<br>a<br>0,01 Za<br>a<br>5<br>0 0,001<br>0 5 10 15 20 25 30 35 40 45 50 55 0 10 20 30 40 50 60 70 80 90 100<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>
**==> picture [485 x 310] intentionally omitted <==**
**----- Start of picture text -----**<br>
tdon =f(R),t=f(R),t G r G doff =Ff(R),t=f(R G r G) dv/dt= f(R G)<br>VGE =+15V,1 C =50A,V CE =600V,T vj =175°C VGE =+15V,1 C =50A,V CE =600V,T vj =25°C<br>10 LC 9 a<br>| ttdon r po dv/dt-on at 1/10 × Idv/dt-off at IC C<br>a t doff ee ee ee 8 —- |<br>t f<br>7<br>1 6<br>5<br>ee TEL TTL<br>i ~s<br>4<br>“XN<br>“N<br>0,1 Pare 3 EADS TELL<br>= = \ ——<br>a “tT “NX ‘XN<br>i = 2 | “XN XN<br>7 s<br>1<br>0,01 0<br>0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 50 55<br>RG [ Ω ] RG [Ohm]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>
8
Datasheet
2020-03-13
FP50R12W2T7_B11
## **(RBSOA)**
**==> picture [17 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
ZthJH<br>**----- End of picture text -----**<br>
**==> picture [487 x 300] intentionally omitted <==**
**----- Start of picture text -----**<br>
IC =f(V CE)<br>VGE =415V,R Goff =51 Ω ,T vj =175°C<br>10 120<br>ZthJH : IGBT IC, Modul<br>Sa<br>110 IC, Chip<br>100<br>90<br>1 80<br>Pt ert tt<br>70<br>Saeiiilinwadel tafe<br>60<br>50<br>0,1 40<br>/ 30<br>20<br>i: 1 2 3 4<br>ri[K/W]: 0,041 0,187 0,649 0,033<br>τ i[s]: 0,0011 0,0224 0,0333 3,44 10<br>0,01 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400<br>t [s] VCE [V]<br> [K/W]thJH [A]IC<br>Z<br>**----- End of picture text -----**<br>
**==> picture [486 x 310] intentionally omitted <==**
**----- Start of picture text -----**<br>
C=f(V CE) VGE =f(Q G)<br>VGE =0OV,T vj = 25°C,f = 100kHz IC =50A,T vj =25°C<br>100 15<br>Cies VCC = 600 V<br>C oes<br>a C res may ,<br>10<br>10 ee<br>ee<br>5<br>1 0<br>a<br>————————<br>py -5<br>\ 7S<br>0,1 \XS ~~ =—<br>a<br>a<br>po -10<br>0,01 -15<br>0 10 20 30 40 50 60 70 80 90 100 0,0 0,2 0,4 0,6 0,8 1,0<br>VCE [V] QG [µC]<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>
9
Datasheet
2020-03-13
FP50R12W2T7_B11
> IF =f(V F))
**==> picture [485 x 309] intentionally omitted <==**
**----- Start of picture text -----**<br>
F =f(V F)) Erec =fil F)<br>RGon =5.1 Ω ,V CE =600V<br>100 6,0<br>Tvj = 25°C Erec, Tvj = 125°C<br>Tvj = 125°C / Erec, Tvj = 175°C<br>90 T vj = 175°C !<br>/ —<br>/ 5,0<br>80 f/<br>if i<br>70 i/ /<br>4,0<br>/<br>60 ee / / ce<br>50 3,0<br>7<br>7<br>40 7<br>/<br>2,0 f<br>30 7<br>7<br>20<br>1,0<br>10 Ean Ae<br>0 0,0<br>0,0 0,5 1,0 1,5 2,0 2,5 0 10 20 30 40 50 60 70 80 90 100<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
**==> picture [49 x 17] intentionally omitted <==**
**----- Start of picture text -----**<br>
Erec =f(R G)<br>IF =50A,V CE<br>**----- End of picture text -----**<br>
ZthJH
**==> picture [483 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
5,0 10 aee<br>EErecrec, T, Tvjvj = 125°C = 175°C HEHee ZthJH : Diode<br>nn PT ee ee ee e ee<br>4,0<br>\<br>\<br>I 1 aT ft<br>3,0 \ \ SSa<br>\.\ et ehf cet<br>N Sf<br> \<br>2,0<br>~<br>- ~ foil<br>0,1<br>— VA<br>1,0<br>i: 1 2 3 4<br>ri[K/W]: 0,058 0,137 0,445 0,56<br>τ i[s]: 0,0013 0,0119 0,0687 0,2<br>0,0 0,01<br>0 5 10 15 20 25 30 35 40 45 50 55 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
10
Datasheet
2020-03-13
FP50R12W2T7_B11
**==> picture [34 x 8] intentionally omitted <==**
**----- Start of picture text -----**<br>
IF =f(V F)<br>**----- End of picture text -----**<br>
ZthJH
**==> picture [483 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 10<br>Tvj = 25°C ee ZthJH: Diode<br>Tvj = 150°C<br>90<br>80<br>70<br>1<br>60 | eepA<br>nt eo<br>50<br>40<br>0,1<br>30<br>eee eerie<br>20<br>i: 1 2 3 4<br>10 ri[K/W]: 0,057 0,185 0,416 0,582<br>po τ i[s]: 0,0007 0,0093 0,0488 0,182<br>ERs a |<br>0 0,01<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 0,001 0,01 0,1 1 10<br>VF [V] t [s]<br> [A]IF [K/W]thJH<br>Z<br>**----- End of picture text -----**<br>
**==> picture [38 x 17] intentionally omitted <==**
**----- Start of picture text -----**<br>
IC =f(V CE)<br>VGE =15V<br>**----- End of picture text -----**<br>
> IF =f(V F)
**==> picture [484 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
70 50<br>Tvj = 25°C Tvj = 25°C<br>65 = T vj = 125°C | | “AA | Tvj = 125°C<br>= Tvj = 175°C | la‘ < 45 T vj = 175°C<br>60<br>/ / y<br>40<br>55 1<br>/ / //i/<br>50 7 35 /<br>//<br>45 tf<br>// 30<br>40 /<br>/i<br>35 25<br>[1<br>30 ]<br>20<br>25<br>//<br>15<br>20<br>15<br>10<br>SEER / /enne<br>10<br>5<br>5<br>ff<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
11
Datasheet
2020-03-13
FP50R12W2T7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(TNTC)
**==> picture [240 x 282] intentionally omitted <==**
**----- Start of picture text -----**<br>
100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
12
V�2.0 2020-03-13
Datasheet
FP50R12W2T7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Schaltplan�/�Circuit�diagram**
## **Vorläufige�Daten Preliminary�Data**
**==> picture [345 x 153] intentionally omitted <==**
**----- Start of picture text -----**<br>
J<br>**----- End of picture text -----**<br>
## **Gehäuseabmessungen�/�Package�outlines**
**==> picture [31 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>
**==> picture [122 x 98] intentionally omitted <==**
13
V�2.0 2020-03-13
Datasheet
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →