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FP50R12KT4BPSA1
IGBT Module, PIM Three Phase Input Rectifier, 50 A, 1.85 V, 280 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPIM 2
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 280W
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- DC Collector Current: 50A
- Power Dissipation Pd: 280W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 55.68 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FP50R12KT4
**==> picture [86 x 38] intentionally omitted <==**
EconoPIM™2�Modul�mit�Trench/Feldstopp�IGBT4�und�Emitter�Controlled4�Diode�� EconoPIM™2�module�with�trench/fieldstop�IGBT4�and�Emitter�Controlled4�diode��
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FP50R12KT4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|EconoPIM™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode<br>EconoPIM™2modulewithtrench/fieldstopIGBT4andEmitterControlled4diode<br>preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>280<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,70 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, di/dt = 1400 A/µs (Tvj= 150°C)<br>RGon= 15Ω<br>Eon<br>5,70<br>7,70<br>8,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 15Ω<br>Eoff<br>2,80<br>4,30<br>4,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,54<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,295<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
1
> IGBT-ModuleIGBT-modules FP50R12KT4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|50|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|100|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|560|||A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>IF= 50 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||54,0<br>60,0<br>63,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||5,50<br>8,80<br>10,0||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 50 A, - diF/dt = 1400 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,70<br>3,00<br>3,70||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,81|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,44||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|70|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|80|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 50 A|VF||1,05||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,85|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,465||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0|||||||
|preparedby:AS|dateofpublication:2013-11-04||||||
|approvedby:RS|revision:2.0||||||
2
> IGBT-ModuleIGBT-modules FP50R12KT4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FP50R12KT4<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>25<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>160<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,85 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,20<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,45<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,05<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>td on<br>0,05<br>0,06<br>0,06<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 37Ω<br>tr<br>0,03<br>0,04<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>td off<br>0,34<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 37Ω<br>tf<br>0,05<br>0,07<br>0,08<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 37Ω<br>Eon<br>2,00<br>2,65<br>2,90<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 37Ω<br>Eoff<br>1,40<br>2,20<br>2,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>90<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,95<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,52<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
3
> IGBT-ModuleIGBT-modules FP50R12KT4
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|15|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|48,0<br>|A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||20,0<br>22,0<br>23,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,50<br>2,50<br>2,70||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 15 A, - diF/dt = 1000 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,55<br>0,90<br>1,00||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,50|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,82||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0
4
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FP50R12KT4
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||35||nH|
|HöchstzulässigeSperrschichttemperatur<br>Maximumjunctiontemperature|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj max|||175<br>150|°C<br>°C|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm|
|Gewicht<br>Weight||G||180||g|
prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0
5
## IGBT-Module IGBT-modules
## FP50R12KT4
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**----- Start of picture text -----**<br>
IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>100 a 7 100 es | [ov<br>Tvj = 25°C VGE = 19V<br>90 Tvj = 125°C Tepe} a 90 | VGE = 17V L i Aaaa | be<br>Tvj = 150°C VGE = 15V<br>VGE = 13V<br>80 ee | 80 VGE = 11V Le<br>VGE = 9V<br>Pt a PE e e<br>70 70<br>PP ye: E e—<br>60 fe 60 —<br>50 50<br>PPou Awa de TE EEey ee<br>40 SRR ,ARE eee 40 i;22a4<br>30 Seee “ eee eee) 30 Ly 1) vAcee<br>20 20<br>eeee<br>10 10<br>PTLET PT gee<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =15 Ω ,R Goff =15 Ω ,V CE =600V<br>100 20<br>Tvj = 25°C Eon, Tvj = 125°C<br>90 | Tvj = 125°C ie 18 Eoff, Tvj = 125°C oo<br>Tvj = 150°C Eon, Tvj = 150°C<br>Ee i a<br>Eoff, Tvj = 150°C<br>BS a TC) fe [e Feane<br>80 16<br>70 R e e ee 14 Oe a<br>PPA FREER<br>60 12 a ee eee [ee]<br>CEPT) aFREERee ee eee ARE<br>50 10<br>SRR<br>40 8 ee ee ee /<br>2 ee eee ee eee<br>S00 ee<br>30 6<br>20 i ee4008 eo 4 eeee(romaeee<br>e/a a ee ee ee<br>10 2<br>0 eet 0 Rr eeeee<br>7 eeee<br>5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70 80 90 100<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
6
IGBT-Module IGBT-modules
## FP50R12KT4
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**----- Start of picture text -----**<br>
switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =50A,V CE =600V<br>20 a Eon, Tvj = 125°C a7 1 ZthJC : IGBT<br>18 Z Eoff, Tvj = 125°C Wold] ) Ler H— | SOee E e e ee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C<br>16 Ena Ween LgeceL> PCI a a | |<br>14 Py yt | flere]eaby IPL TaeEI e ETT<br>12 tt van UEAAI CT TUT<br>caer 7<br>thee<br>10 0,1<br>8 Pari Z| ELLttLLLTT Ey] PEAI<br>7<br>6 Sea oe 0<br>Hicbeeeee TALI ETN<br>4<br>i: 1 2 3 4<br>2 PLE EE EE EEee C r τ ii[K/W]: [s]: Toon 0,0324 0,01 ATH 0,1782 0,02 0,1728 0,05 0,1566 0,1<br>0 0,01<br>0 20 40 60 80 100 120 140 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =15 Ω ,T vj =150°C<br>110 100<br>IC, Modul Tvj = 25°C<br>100 I C , Chip 90 Tvj = 125°C<br>Tvj = 150°C<br>ET FO Eee<br>90<br>80<br>80<br>FREE SS E<br>70<br>70<br>60<br>60<br>50<br>50<br>40<br>40<br>30<br>30<br>a ae<br>20<br>20<br>ee ee eee #/<br>10 ee 10 ee VA eee<br>ee<br>0 0<br>eee eee<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
7
## IGBT-Module IGBT-modules
## FP50R12KT4
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**----- Start of picture text -----**<br>
Erec =f (I F) Erec =f(R G)<br>RGon =15 Ω ,V CE =600V IF =50A,V CE =600V<br>5,0 5,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>4,5 E Erec, Tvj = 150°C tt 4,5 E Erec, Tvj = 150°C e<br>4,0 4,0<br>3,5 3,5<br>3,0 3,0<br>2,5 2,5<br>tla at BRRe SRR RG ESRD<br>2,0 Pierre EE 2,0 ELE PRL<br>PATEL LEE<br>1,5 WA 1,5 EEE EE<br>1,0 Vite Ett yy 1,0 ELLE<br>ELE<br>0,5 AAT [TT][ EET] 0,5 Ee<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
> IFF =f(V F))
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**----- Start of picture text -----**<br>
ZthJC = f (t) IFF =f(V F))<br>10 ——— er 100 1<br>ZthJC : Diode Tvj = 25°C<br>o H#H— o Fee TT 90 (ee Tvj = 150°C<br>PT TT TTTTTT<br>| | | ll 8070 PTTP| [| PPL|<br>IMT /<br>1<br>a a ee ee ee e e ee<br>a 60<br>PTPTa TTTTT TTTaeTel T TTT 50 PET] | TLE Ly ALEt<br>40<br>SAAD) MART RTI PET YT | TLE LL RALt<br>0,1<br>Oe<br>30<br>Yr YI 1<br>Ya AT TTTaTTT ee 20 PL TT TT LL ar‘| ee/ yy<br>/ i: 1 2 3 4 U<br>‘ c r τ ii[K/W]: [s]: 0,0486 0,01 0,2673 0,02 y 0,2592 0,05 0,2349 0,1 10 LL EL Ee<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br>
8
IGBT-Module IGBT-modules
## FP50R12KT4
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**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE =15V<br>50 27<br>Tvj = 25°C Tvj = 25°C<br>45 Tvj = 125°C 24 Tvj = 125°C<br>EFW Tvj = 150°C ye) f Tvj = 150°C ee<br>40<br>21<br>35<br>18<br>30<br>15<br>CaerLypi SteAY<br>25<br>on 12 COPE<br>20<br>9<br>15<br>HEGRE 6 titty ty<br>105 3 Le<br>PT [APT)]<br>PIA<br>0 0<br>TT TT Liber<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>{— | Rtyp S a SeS A eee<br>(a rs ce<br>e e ee eee<br>PERE E EEE EEE<br>10000 NE<br>a ee<br>a<br>Ne ee ee ee ee ee ee ee ee<br>pot TNT tt<br>Eee NEE eee eee<br>1000<br>SSS<br>A<br>Pot eee eee<br>pjeeNe eee<br>Pt ftEP tftEE ftTE TTft t T tTTAHAE TT<br>SERRE RRRRRRRREE<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A] [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
9
## Technische�Information�/�Technical�Information
> IGBT-ModuleIGBT-modules FP50R12KT4
## **Schaltplan�/�circuit_diagram_headline**
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
**==> picture [7 x 6] intentionally omitted <==**
**----- Start of picture text -----**<br>
J<br>**----- End of picture text -----**<br>
## **Gehäuseabmessungen�/�package�outlines**
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**----- Start of picture text -----**<br>
In fin e o n<br>**----- End of picture text -----**<br>
prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0
10
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FP50R12KT4
## **Nutzungsbedingungen**
## application.
11
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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