Image not available
Illustrative purposes only
FP50R12KS4CBOSA1
IGBT Module, PIM Three Phase Input Rectifier, 70 A, 3.2 V, 360 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:70A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:360W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
- SVHC: No SVHC (17-Jan-2023)
- Product Range: EconoPIM
- IGBT Technology: IGBT 2 Fast
- IGBT Termination: Press Fit
- Power Dissipation: 360W
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 70A
- Power Dissipation Pd: 360W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 70A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 3.2V
- Collector Emitter Saturation Voltage Vce(on): 3.2V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 197.31 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
|Technische Information / Technical Information|Technische Information / Technical Information| |---|---| |IGBT-Module<br>IGBT-Modules|FP50R12KS4C| ## **Elektrische Eigenschaften / Electrical properties** ## **Höchstzulässige Werte / Maximum rated values** |Technische Information / Technical Information<br>IGBT-Module<br>IGBT-Modules<br>FP50R12KS4C<br>~~|~~|~~|eupec~~| |---|---| ||~~|~~| |**Elektrische Eigenschaften / Electrical properties**<br>**Höchstzulässige Werte / Maximum rated values**<br>**Diode Gleichrichter/ Diode Rectifier**<br>Periodische Rückw. Spitzensperrspannung<br>repetitive peak reverse voltage<br>VRRM<br>1600<br>V<br>Durchlaßstrom Grenzeffektivwert<br>RMS forward current per chip<br>IFRMSM<br>40<br>A<br>Dauergleichstrom<br>DC forward current<br>TC= 80°C<br>Id<br>50<br>A<br>Stoßstrom Grenzwert<br>tP= 10 ms, Tvj= 25°C<br>IFSM<br>500<br>A<br>surge forward current<br>tP= 10 ms, Tvj = 150°C<br>400<br>A<br>Grenzlastintegral<br>tP= 10 ms, Tvj= 25°C<br>I2t<br>1250<br>A2s<br>I2t - value<br>tP= 10 ms, Tvj = 150°C<br>800<br>A2s<br>**Transistor Wechselrichter/ Transistor Inverter**<br>Kollektor-Emitter-Sperrspannung<br>collector-emitter voltage<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>Tc = 80 °C<br>IC,nom.<br>50<br>A<br>DC-collector current<br>TC= 25 °C<br>IC<br>70<br>A<br>Periodischer Kollektor Spitzenstrom<br>repetitive peak collector current<br>tP= 1 ms, TC=<br>80 °C<br>ICRM<br>100<br>A<br>Gesamt-Verlustleistung<br>total power dissipation<br>TC= 25°C<br>Ptot<br>360<br>W<br>Gate-Emitter-Spitzenspannung<br>gate-emitter peak voltage<br>VGES<br>+/- 20V<br>V<br>**Diode Wechselrichter/ Diode Inverter**<br>Dauergleichstrom<br>DC forward current<br>Tc = 80 °C<br>IF<br>50<br>A<br>Periodischer Spitzenstrom<br>repetitive peak forw. current<br>tP= 1 ms<br>IFRM<br>100<br>A<br>Grenzlastintegral<br>I2t - value<br>VR= 0V, tp= 10ms, Tvj= 125°C<br>I2t<br>1.200<br>A2s<br>**Transistor Brems-Chopper/ Transistor Brake-Chopper**<br>Kollektor-Emitter-Sperrspannung<br>collector-emitter voltage<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>TC= 80 °C<br>IC,nom.<br>25<br>A<br>DC-collector current<br>TC= 25 °C<br>IC<br>45<br>A<br>Periodischer Kollektor Spitzenstrom<br>repetitive peak collector current<br>tP= 1 ms, TC= 80°C<br>ICRM<br>50<br>A<br>Gesamt-Verlustleistung<br>total power dissipation<br>TC= 25°C<br>Ptot<br>230<br>W<br>Gate-Emitter-Spitzenspannung<br>gate-emitter peak voltage<br>VGES<br>+/- 20V<br>V<br>**Diode Brems-Chopper/ Diode Brake-Chopper**<br>Dauergleichstrom<br>DC forward current<br>Tc = 80 °C<br>IF<br>15<br>A<br>Periodischer Spitzenstrom<br>repetitive peak forw. current<br>tP= 1 ms<br>IFRM<br>30<br>A<br>prepared by: A.Schulz<br>date of publication: 2001-11-28<br>approved by: M.Hierholzer<br>revision: 2|| 1/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 ## Technische Information / Technical Information > IGBT-ModuleIGBT-Modules FP50R12KS4C |**Modul Isolation/ Module Isolation**||||| |---|---|---|---|---| |Isolations-Prüfspannung<br>insulation test voltage|RMS, f = 50 Hz, t = 1 min.<br>NTC connected to Baseplate|VISOL|2,5|kV| ## **Elektrische Eigenschaften / Electrical properties** ## **Charakteristische Werte / Characteristic values** |Technische Information / Technical Information<br>IGBT-ModuleIGBT-Modules<br>IGBT-Modules<br>FP50R12KS4C<br>~~|~~|~~|eupec~~| |---|---| ||~~|~~| |**Modul Isolation/ Module Isolation**<br>Isolations-Prüfspannung<br>insulation test voltage<br>RMS, f = 50 Hz, t = 1 min.<br>NTC connected to Baseplate<br>VISOL<br>2,5<br>kV<br>**Elektrische Eigenschaften / Electrical properties**<br>**Charakteristische Werte / Characteristic values**<br>**Diode Gleichrichter/ Diode Rectifier**<br>**min.**<br>**typ.**<br>**max.**<br>Durchlaßspannung<br>forward voltage<br>Tvj= 150°C, IF=<br>50 A<br>VF<br>-<br>1,05<br>-<br>V<br>Schleusenspannung<br>threshold voltage<br>Tvj= 150°C<br>V(TO)<br>-<br>-<br>0,8<br>V<br>Ersatzwiderstand<br>slope resistance<br>Tvj= 150°C<br>rT<br>-<br>-<br>6,5<br>mΩ<br>Sperrstrom<br>reverse current<br>Tvj= 150°C, VR=<br>1600 V<br>IR<br>-<br>3<br>-<br>mA<br>Modul Leitungswiderstand, Anschlüsse-Chip<br>lead resistance, terminals-chip<br>TC= 25°C<br>RAA'+CC'<br>-<br>4<br>-<br>mΩ<br>**Transistor Wechselrichter/ Transistor Inverter**<br>**min.**<br>**typ.**<br>**max.**<br>Kollektor-Emitter Sättigungsspannung<br>VGE= 15V, Tvj= 25°C, IC=<br>50 A<br>VCE sat<br>-<br>3,2<br>3,7<br>V<br>collector-emitter saturation voltage<br>VGE= 15V, Tvj= 125°C, IC=<br>50 A<br>-<br>3,85<br>-<br>V<br>Gate-Schwellenspannung<br>gate threshold voltage<br>VCE= VGE, Tvj= 25°C, IC=<br>2 mA<br>VGE(TO)<br>4,5<br>5,5<br>6,5<br>V<br>Eingangskapazität<br>input capacitance<br>f = 1MHz, Tvj= 25°C<br>VCE= 25 V, VGE= 0 V<br>Cies<br>-<br>3,3<br>-<br>nF<br>Kollektor-Emitter Reststrom<br>collector-emitter cut-off current<br>Gate-Emitter Reststrom<br>gate-emitter leakage current<br>VCE= 0V, VGE=20V, Tvj=25°C<br>IGES<br>-<br>-<br>400<br>nA<br>Einschaltverzögerungszeit (ind. Last)<br>IC= INenn, VCC=<br>600 V<br>turn on delay time (inductive load)<br>VGE= ±15V, Tvj= 25°C, RG=<br>15 Ohm<br>td,on<br>-<br>60<br>-<br>ns<br>VGE= ±15V, Tvj= 125°C, RG=<br>15 Ohm<br>-<br>60<br>-<br>ns<br>Anstiegszeit (induktive Last)<br>IC= INenn, VCC=<br>600 V<br>rise time (inductive load)<br>VGE= ±15V, Tvj= 25°C, RG=<br>15 Ohm<br>tr<br>-<br>50<br>-<br>ns<br>VGE= ±15V, Tvj= 125°C, RG=<br>15 Ohm<br>-<br>50<br>-<br>ns<br>Abschaltverzögerungszeit (ind. Last)<br>IC= INenn, VCC=<br>600 V<br>turn off delay time (inductive load)<br>VGE= ±15V, Tvj= 25°C, RG=<br>15 Ohm<br>td,off<br>-<br>340<br>-<br>ns<br>VGE= ±15V, Tvj= 125°C, RG=<br>15 Ohm<br>-<br>400<br>-<br>ns<br>Fallzeit (induktive Last)<br>IC= INenn, VCC=<br>600 V<br>fall time (inductive load)<br>VGE= ±15V, Tvj= 25°C, RG=<br>15 Ohm<br>tf<br>-<br>50<br>-<br>ns<br>VGE= ±15V, Tvj= 125°C, RG=<br>15 Ohm<br>-<br>60<br>-<br>ns<br>Einschaltverlustenergie pro Puls<br>IC= INenn, VCC=<br>600 V<br>turn-on energy loss per pulse<br>VGE= ±15V, Tvj= 125°C, RG=<br>15 Ohm<br>Eon<br>-<br>6,5<br>-<br>mWs<br>LS=<br>50 nH<br>Abschaltverlustenergie pro Puls<br>IC= INenn, VCC=<br>600 V<br>turn-off energy loss per pulse<br>VGE= ±15V, Tvj= 125°C, RG=<br>15 Ohm<br>Eoff<br>-<br>3,4<br>-<br>mWs<br>LS=<br>50 nH<br>Kurzschlußverhalten<br>tP ≤10µs, VGE ≤15V, RG=<br>15 Ohm<br>SC Data<br>Tvj≤125°C, VCC=<br>720 V<br>ISC<br>-<br>300<br>-<br>A<br>dI/dt =<br>4000 A/µs<br>mA<br>-<br>-<br>VGE= 0V, Tvj= 25°C, VCE=<br>1200 V<br>ICES<br>5|| 2/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 Technische Information / Technical Information IGBT-ModuleIGBT-Modules FP50R12KS4C ## **Elektrische Eigenschaften / Electrical properties** ## **Charakteristische Werte / Characteristic values** |Technische Information / Technical Information<br>IGBT-ModuleIGBT-Modules<br>IGBT-Modules<br>FP50R12KS4C|| |---|---| ||| |**Elektrische Eigenschaften / Electrical properties**<br>**Charakteristische Werte / Characteristic values**<br>**min.**<br>**typ.**<br>**max.**<br>Modulinduktivität<br>stray inductance module<br>LσCE<br>-<br>-<br>100<br>nH<br>Modul Leitungswiderstand, Anschlüsse-Chip<br>lead resistance, terminals-chip<br>TC= 25°C<br>RCC'+EE'<br>-<br>7<br>-<br>mΩ<br>**Diode Wechselrichter/ Diode Inverter**<br>**min.**<br>**typ.**<br>**max.**<br>Durchlaßspannung<br>VGE= 0V, Tvj= 25°C, IF=<br>50 A<br>VF<br>-<br>1,75<br>2,15<br>V<br>forward voltage<br>VGE= 0V, Tvj= 125°C, IF=<br>50 A<br>-<br>1,7<br>-<br>V<br>Rückstromspitze<br>IF=INenn, - diF/dt =<br>1600A/µs<br>peak reverse recovery current<br>VGE= -10V, Tvj= 25°C, VR=<br>600 V<br>IRM<br>-<br>75<br>-<br>A<br>VGE= -10V, Tvj= 125°C, VR=<br>600 V<br>-<br>85<br>-<br>A<br>Sperrverzögerungsladung<br>IF=INenn, - diF/dt =<br>1600A/µs<br>recovered charge<br>VGE= -10V, Tvj= 25°C, VR=<br>600 V<br>Qr<br>-<br>5,5<br>-<br>µAs<br>VGE= -10V, Tvj= 125°C, VR=<br>600 V<br>-<br>12<br>-<br>µAs<br>Abschaltenergie pro Puls<br>IF=INenn, - diF/dt =<br>1600A/µs<br>reverse recovery energy<br>VGE= -10V, Tvj= 25°C, VR=<br>600 V<br>ERQ<br>-<br>1,6<br>-<br>mWs<br>VGE= -10V, Tvj= 125°C, VR=<br>600 V<br>-<br>4<br>-<br>mWs<br>**Transistor Brems-Chopper/ Transistor Brake-Chopper**<br>**min.**<br>**typ.**<br>**max.**<br>Kollektor-Emitter Sättigungsspannung<br>VGE= 15V, Tvj= 25°C, IC=<br>25,0 A<br>VCE sat<br>-<br>2,2<br>2,55<br>V<br>collector-emitter saturation voltage<br>VGE= 15V, Tvj= 125°C, IC=<br>25,0 A<br>-<br>2,5<br>-<br>V<br>Gate-Schwellenspannung<br>gate threshold voltage<br>VCE= VGE, Tvj= 25°C, IC=<br>1mA<br>VGE(TO)<br>4,5<br>5,5<br>6,5<br>V<br>Eingangskapazität<br>input capacitance<br>f = 1MHz, Tvj= 25°C<br>VCE= 25 V, VGE= 0 V<br>Cies<br>-<br>1,5<br>-<br>nF<br>Kollektor-Emitter Reststrom<br>VGE= 0V, Tvj= 25°C, VCE=<br>1200 V<br>ICES<br>-<br>1,5<br>500<br>µA<br>collector-emitter cut-off current<br>VGE= 0V, Tvj= 125°C, VCE=<br>1200 V<br>-<br>2,0<br>-<br>mA<br>Gate-Emitter Reststrom<br>gate-emitter leakage current<br>VCE= 0V, VGE= 20V, Tvj= 25°C<br>IGES<br>-<br>-<br>300<br>nA<br>Schaltverluste und -bedingungen<br>Switching losses and conditions<br>siehe Datenblatt (Wechselrichter)<br>see datasheet (inverter)<br>BSM25GP120<br>**Diode Brems-Chopper/ Diode Brake-Chopper**<br>**min.**<br>**typ.**<br>**max.**<br>Durchlaßspannung<br>Tvj= 25°C, IF=<br>25,0 A<br>VF<br>-<br>2,1<br>2,4<br>V<br>forward voltage<br>Tvj= 125°C, IF=<br>25,0 A<br>-<br>2<br>-<br>V<br>Schaltverluste und -bedingungen<br>Switching losses and conditions<br>siehe Datenblatt (Wechselrichter)<br>see datasheet (inverter)<br>BSM15GP120<br>**NTC-Widerstand/ NTC-Thermistor**<br>**min.**<br>**typ.**<br>**max.**<br>Nennwiderstand<br>rated resistance<br>TC= 25°C<br>R25<br>-<br>5<br>-<br>kΩ<br>Abweichung von R100<br>deviation of R100<br>TC= 100°C, R100= 493Ω<br>∆R/R<br>-5<br>5<br>%<br>Verlustleistung<br>power dissipation<br>TC= 25°C<br>P25<br>20<br>mW<br>B-Wert<br>B-value<br>R2= R1exp [B(1/T2- 1/T1)]<br>B25/50<br>3375<br>K|| 3/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 ## Technische Information / Technical Information > IGBT-ModuleIGBT-Modules FP50R12KS4C ## **Thermische Eigenschaften / Thermal properties** |**Thermische Eigenschaften / Thermal properties**|**Thermische Eigenschaften / Thermal properties**||||||| |---|---|---|---|---|---|---|---| |||||**min.**|**typ.**|**max.**|| |Innerer Wärmewiderstand|Gleichr. Diode/ Rectif. Diode||RthJC|-|-|0,65|K/W| |thermal resistance, junction to case|Trans. Wechsr./ Trans. Inverter|||-|-|0,35|K/W| ||Diode Wechsr./ Diode Inverter|||-|-|0,55|K/W| ||Trans. Bremse/ Trans. Brake|||-|-|0,55|K/W| ||Diode Bremse/ Diode Brake|||-|-|1,2|K/W| |Übergangs-Wärmewiderstand|Gleichr. Diode/ Rectif. Diode|λPaste=1W/m*K|RthCK|-|0,04|-|K/W| |thermal resistance, case to heatsink|Trans. Wechsr./ Trans. Inverter|λgrease=1W/m*K||-|0,02|-|K/W| ||Diode Wechsr./ Diode Inverter|||-|0,04|-|K/W| |Höchstzulässige Sperrschichttemperatur<br>maximum junction temperature|Höchstzulässige Sperrschichttemperatur||Tvj max|-|-|150|°C| |Betriebstemperatur<br>operation temperature|||Tvj op|-40|-|125|°C| |Lagertemperatur<br>storage temperature|Lagertemperatur||Tstg|-40|-|125|°C| ## **Mechanische Eigenschaften / Mechanical properties** |Innere Isolation<br>internal insulation|Innere Isolation||Al2O3|| |---|---|---|---|---| |CTI<br>comperative tracking index|||225|| |Anzugsdrehmoment f. mech. Befestigung||M|3|Nm| |mounting torque|||±10%|| |Gewicht<br>weight||G|300|g| 4/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 Technische Information / Technical Information IGBT-ModuleIGBT-Modules FP50R12KS4C **Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE) Output characteristic Inverter (typical) VGE = 15 V** **==> picture [438 x 562] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80 ee<br>Tj = 25°C<br>70 Tj = 125°C =ei<br>ea ce eee<br>60<br>50<br>40<br>30 ——— |<br>20 a es<br>10 a eea<br>0 eee<br>0 1 2 3 4 5 6<br>VCE [V]<br>Ausgangskennlinienfeld Wechselr. (typisch) IC = f (VCE)<br>Output characteristic Inverter (typical) Tvj = 125°C<br>100<br>90 PrFet VGE = 20V YD<br>VGE = 15V<br>80 VGE = 12V<br>VGE = 10V<br>70 — He<br>60 S S VGE = 8V O<br>50 ee ee ee<br>40 ee eee<br>30 a ee en4<br>20 ——— a<br>10 ee eee<br>0<br>0 1 2 3 4 5 6<br>VCE [V]<br> [A]<br>IC<br> [A]<br>IC<br>**----- End of picture text -----**<br> 5/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 Technische Information / Technical Information IGBT-ModuleIGBT-Modules FP50R12KS4C **Übertragungscharakteristik Wechselr. (typisch) IC = f (VGE) Transfer characteristic Inverter (typical) VCE = 20 V** **==> picture [438 x 562] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80 a<br>70 ee Tj = 25°C ee<br>Tj = 125°C<br>60 Et<br>50 es<br>40 a<br>30 C/A<br>20 7<br>10 7<br>0<br>0 2 4 6 8 10 12 14<br>VGE [V]<br>Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) IF = f (VF)<br>Forward characteristic of FWD Inverter (typical)<br>100<br>90 a<br>80<br>70 SeSe Tj = 25°C<br>Tj = 125°C<br>60 ey<br>50 ee A<br>40 es2<br>30 a2<br>20 a<br>10 ee ee<br>0 eece<br>0 0,5 1 1,5 2 2,5<br>VF [V]<br> [A]<br>IC<br> [A]<br>IF<br>**----- End of picture text -----**<br> 6/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 ## Technische Information / Technical Information > IGBT-ModuleIGBT-Modules FP50R12KS4C **==> picture [441 x 597] intentionally omitted <==** **----- Start of picture text -----**<br> Schaltverluste Wechselr. (typisch) Eon = f (IC), Eoff = f (IC), Erec = f (IC) VCC = 600 V<br>Switching losses Inverter (typical) Tj = 125°C, VGE = ±15 V, RGon = RGoff = 15Ohm<br>18<br>16 . ; -<br>Eon 7<br>14<br>Eoff<br>Erec<br>12 = .<br>y<br>-<br>10 7 . . ,<br>”<br>a<br>Pe<br>8<br>><br>-<br>lc<br>6<br>ae<br>7<br>4<br>2 ee ee<br>0<br>0 20 40 60 80 100 120<br>IC [A]<br>Schaltverluste Wechselr. (typisch) Eon = f (RG), Eoff = f (RG), Erec = f (RG)<br>Switching losses Inverter (typical) Tj = 125°C, VGE = +-15 V , Ic = Inenn , VCC = 600 V<br>10<br>9<br>8 Eon Eoff = 2m oo ww<br>Erec<br>-"C - wo _ as<br>7<br>--" - wm<br>6 —s _:<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35<br>RG [Ω]<br>E [mWs]<br>E [mWs]<br>**----- End of picture text -----**<br> 7/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 Technische Information / Technical Information IGBT-ModuleIGBT-Modules FP50R12KS4C **Transienter Wärmewiderstand Wechselr. ZthJC = f (t) Transient thermal impedance Inverter** **==> picture [433 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>Zth-IGBT<br>Zth-FWD<br>PSE PRP<br>a Ba ee<br>0,1<br>aNd<br>Poot TTT oT EET<br>PTET<br>a<br>0,01<br>0,001 0,01 0,1 1 10<br> [K/W]<br>thJC<br>Z<br>**----- End of picture text -----**<br> ## **t [s]** **==> picture [441 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Sicherer Arbeitsbereich Wechselr. (RBSOA) IC = f (VCE)<br>Reverse bias save operating area Inverter (RBSOA) Tvj = 125°C, VGE = ±15V, RG = 15Ohm<br>120<br>100<br>80 IC,Modul<br>IC,Chip<br>60 HS<br>40<br>20<br>0<br>0 200 400 600 800 1000 1200 1400<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br> 8/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 Technische Information / Technical Information IGBT-ModuleIGBT-Modules FP50R12KS4C ~~PC~~ **==> picture [435 x 598] intentionally omitted <==** **----- Start of picture text -----**<br> Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) IC = f (VCE)<br>Output characteristic brake-chopper-IGBT (typical) VGE = 15 V<br>50<br>45<br>40 e 4s t Tj = 25 ° C<br>Tj = 125°C<br>35 ee<br>30 a ee ae<br>25 Tf<br>20 a4<br>15 a<br>10 Fs 0<br>5<br>0<br>0 0,5 1 1,5 2 2,5 3 3,5 4<br>VCE [V]<br>Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF)<br>Forward characteristic of brake-chopper-FWD (typical)<br>50<br>45 a<br>40<br>35 pOpO Tj = 25°C<br>Tj = 125°C<br>30 ee<br>25 a<br>20 CY<br>15 a<br>10<br>5<br>0 lsee<br>0 0,5 1 1,5 2 2,5 3<br>VF [V]<br> [A]<br>IC<br> [A]<br>IF<br>**----- End of picture text -----**<br> 9/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 ## Technische Information / Technical Information > IGBT-ModuleIGBT-Modules FP50R12KS4C **Durchlaßkennlinie der Gleichrichterdiode (typisch) IF = f (VF) Forward characteristic of Rectifier Diode (typical)** **==> picture [438 x 562] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90 a ee ee ee ee ee<br>80 ee<br>70 ee ee Tj = 25°C ee ee ee ee<br>60 a2 e ee Tj = 150°C ee ee eee<br>50 eeee ee ee ee<br>40 eeee ee ee ee<br>30 ee<br>20 aeeeeee e e ee<br>10 a ee ee ee ee ee<br>0 Poeeed<br>0 0,2 0,4 0,6 0,8 1 1,2 1,4<br>VF [V]<br>NTC- Temperaturkennlinie (typisch) R = f (T)<br>NTC- temperature characteristic (typical)<br>100000<br>Rtyp<br>=———— == == = SS SS SS SS<br>eeeee<br>Pepe EE<br>10000<br>PROC<br>poA<br>a<br>Pfft ttt fe<br>1000<br>CCCP<br>poo<br>a<br>Pep EE RE<br>100 PTT TT TEE EE<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A]<br>IF<br>]<br>Ω<br>R[<br>**----- End of picture text -----**<br> 10/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 ## Technische Information / Technical Information > IGBT-ModuleIGBT-Modules FP50R12KS4C ## **Schaltplan/ Circuit diagram** **==> picture [373 x 92] intentionally omitted <==** **----- Start of picture text -----**<br> 8 9<br>21 22<br>20 18 16<br>x Ka 4x 4 Ca | |<br>19 17 15 NTC<br>1 2 3 7 4 5 6<br>14 13 12 11<br>+ a q ZI a q ZI ZI<br>23 24 10<br>**----- End of picture text -----**<br> ## **Gehäuseabmessungen/ Package outlines** Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 11/11 DB-PIM-S_IGBT_V2.xls 2001-11-28 ## **Nutzungsbedingungen** Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, für die wir eine liefervertragliche Gewährleistung übernehmen. Eine solche Gewährleistung richtet sich ausschließlich nach Maßgabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden für das Produkt und dessen Eigenschaften keinesfalls übernommen. Sollten Sie von uns Produktinformationen benötigen, die über den Inhalt dieses Produktdatenblatts hinausgehen und insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem für Sie zuständigen Vertriebsbüro in Verbindung (siehe www.eupec.com, Vertrieb&Kontakt). Für Interessenten halten wir Application Notes bereit. Aufgrund der technischen Anforderungen könnte unser Produkt gesundheitsgefährdende Substanzen enthalten. Bei Rückfragen zu den in diesem Produkt jeweils enthaltenen Substanzen setzen Sie sich bitte ebenfalls mit dem für Sie zuständigen Vertriebsbüro in Verbindung. Sollten Sie beabsichtigen, das Produkt in Anwendungen der Luftfahrt, in gesundheits- oder lebensgefährdenden oder lebenserhaltenden Anwendungsbereichen einzusetzen, bitten wir um Mitteilung. Wir weisen darauf hin, dass wir für diese Fälle - die gemeinsame Durchführung eines Risiko- und Qualitätsassessments; - den Abschluss von speziellen Qualitätssicherungsvereinbarungen; - die gemeinsame Einführung von Maßnahmen zu einer laufenden Produktbeobachtung dringend empfehlen und gegebenenfalls die Belieferung von der Umsetzung solcher Maßnahmen abhängig machen. Soweit erforderlich, bitten wir Sie, entsprechende Hinweise an Ihre Kunden zu geben. Inhaltliche Änderungen dieses Produktdatenblatts bleiben vorbehalten. ## **Terms & Conditions of usage** The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.eupec.com, sales&contact). For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. Please note, that for any such applications we urgently recommend - to perform joint Risk and Quality Assessments; - the conclusion of Quality Agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →