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FP40R12KT3BPSA1
IGBT Module, Seven Pack, 55 A, 1.8 V, 210 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: -
- IGBT Technology: IGBT 3 [Trench]
- IGBT Termination: Press Fit
- Power Dissipation: 210W
- IGBT Configuration: Seven Pack
- Transistor Mounting: Panel
- DC Collector Current: 55A
- Power Dissipation Pd: 210W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 55A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.8V
- Collector Emitter Saturation Voltage Vce(on): 1.8V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 55.94 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
> IGBT-ModuleIGBT-modules FP40R12KT3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation<br>FP40R12KT3<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>40<br>55<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>80<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>210<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 40 A, VGE= 15 V<br>IC= 40 A, VGE= 15 V<br>VCE sat<br>1,80<br>2,05<br>2,30<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,50 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,33<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>6,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,50<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,09<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 40 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 27Ω<br>td on<br>0,09<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 40 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 27Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 40 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 27Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 40 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 27Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 40 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V<br>RGon= 27Ω<br>Eon<br>4,10<br>5,80<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 40 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V<br>RGoff= 27Ω<br>Eoff<br>3,60<br>4,20<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>160<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,60<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| |preparedby:AS|dateofpublication:2013-10-03| |---|---| |approvedby:RS|revision:2.0| 1 > IGBT-ModuleIGBT-modules FP40R12KT3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|40|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|80|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|320|||A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 40 A, VGE= 0 V<br>IF= 40 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,75<br>1,75|2,30|V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 40 A, - diF/dt = 1000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||45,0<br>46,0||A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 40 A, - diF/dt = 1000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||4,40<br>8,40||µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 40 A, - diF/dt = 1000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||1,55<br>3,10||mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,95|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V| |---|---|---|---|---|---|---| |DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|50|||A| |GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|60|||A| |StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|315<br>260|||A<br>A| |Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|500<br>340|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 40 A|VF||1,20||V| |Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||2,00||mA| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,00|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op||||°C| |preparedby:AS|dateofpublication:2013-10-03| |---|---| |approvedby:RS|revision:2.0| 2 > IGBT-ModuleIGBT-modules FP40R12KT3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FP40R12KT3<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>15<br>25<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>30<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>105<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>VCE sat<br>1,70<br>1,90<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,50 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,15<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,04<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 75Ω<br>td on<br>0,09<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 75Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 75Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 75Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 75Ω<br>Eon<br>1,50<br>2,10<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 75Ω<br>Eoff<br>1,10<br>1,30<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>60<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,20<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| |preparedby:AS|dateofpublication:2013-10-03| |---|---| |approvedby:RS|revision:2.0| 3 > IGBT-ModuleIGBT-modules FP40R12KT3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|20,0<br>|A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,80<br>1,85|2,25|V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||14,0<br>15,0||A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||1,00<br>1,80||µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||0,26<br>0,56||mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||2,30|K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 4 IGBT-Module IGBT-modules ## FP40R12KT3 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV| |Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||AI203||| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlkérper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W| |Modulstreuinduktivität<br>Chip<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -<br>Module lead resistance, terminals - chip|TC<br>~~ee ~~<br>= 25°C, pro Schalter / per switch|LsCE<br>RCC'+EE'<br>RAA'+CC'<br> ~~ee ee~~|60<br>4,00<br>3,00<br>~~ee~~|||nH<br>mΩ| |Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm| |Gewicht<br>Weight||G||180||g| 5 ## IGBT-Module IGBT-modules ## FP40R12KT3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>80 a | / 7 80 es<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>70 70 VGE = 15V<br>EJ) fv) FL | ea<br>VGE = 13V<br>VGE = 11V<br>60 60 VGE = 9V<br>/<br>/ / /is<br>50 50<br>/ hi / vA<br>40 40<br>A<br>30 30<br>/, [i/,<br>20 20<br>10 10<br>/ Ya<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =27 Ω ,R Goff =27 Ω ,V CE =600V<br>80 16<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eoff, Tvj = 125°C<br>70 14<br>=| | a ee<br>60 12<br>50 10<br>40 8<br>ot | itty<br>30 6<br>20 4<br>10 2<br>Pt ig tt ey Lee<br>0 0<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70 80<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 6 IGBT-Module IGBT-modules ## FP40R12KT3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =40A,V CE =600V<br>10 a 1 a<br>|ee eee<br>Eon, Tvj = 125°C ZthJC : IGBT<br>98 7 . Eoff, Tvj = 125°C 7] | | fl a |ee a<br>7 Pf fe PL TA aeETI ETT|<br>6<br>pot] ft et7 UU CATT‘ LIE<br>5 0,1<br>TATee<br>4 ean ee ee<br>7<br>3 Poff | VETTET<br>2 Pf Ff ff PAEa a |a I<br>i: 1 2 3 4<br>1 oe GE) ||| QA r τ ii[K/W]: [s]: 0,06769 0,002345 0,2709 0,0282 0,1523 0,1128 0,1052 0,282<br>0 Po tT 0,01 a<br>0 10 20 30 40 50 60 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =27 Ω ,T vj =125°C<br>90 80<br>IC, Modul Tvj = 25°C<br>80 EJ) IC, Chip ee Tvj = 125°C<br>70<br>t<br>70<br>ee ee<br>ee 60<br>60<br>ee 50 eee<br>50<br>40<br>40<br>30<br>30<br>pt | | tt a a<br>20<br>20<br>pe aT<br>10<br>10<br>eee<br>0 0<br>eee e<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 7 IGBT-Module IGBT-modules ## FP40R12KT3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon 1S Ω ,V CE =600V IF = 40K V CE = 600 V<br>5,0 ss 5,0 |<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>[ee (ee<br>4,5 4,5<br>4,0 4,0<br>PtP Pp ee Pe<br>3,5 e epa 3,5 e e<br>BRR ——<br>3,0 3,0<br>/ 28 ee eee<br>E42 eee<br>2,5 2,5<br>2,0 2,0<br>24 ee<br>1,5 1,5<br>1,0 1,0<br>0,5 0,5<br>0,0 0,0<br>0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, Gleichrichter (typisch)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJC =f (t) IF =f(V F)<br>1 Pn 80 I<br>| ZthJC : Diode ee ee Tvj = 25°C<br>a Tvj = 150°C<br>PT TT EAT TT 70 rd ];<br>CZ C 60 PLP TT yy By<br>a a fy<br>OCCT AR<br>ATE, 50 (EE<br>0,1 40<br>P| 7]AL TTTT)TT ! //<br>PL|a el|| 3020 PL TT LL Td<br>T im i: 1 2 ir 3 4 PPLT]<br>ri[K/W]: 0,09674 0,6249 0,18 0,05701 10<br>τ i[s]: 0,003333 0,03429 0,1294 0,7662<br>P| 7)<br>0,01 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br> 8 ## IGBT-Module IGBT-modules Technische Information / FP40R12KT3 Technical Information **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IF =f(V F)<br>VGE =15V<br>30 a|7 30<br>Tvj = 25°C Tvj = 25°C<br>Tvj = 125°C Tvj = 125°C<br>25 25<br>20 20<br>15 / 15 |<br>10 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>VCE [V] VF [V]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>| J Rtyp a—————————a<br>(Rar ce<br>a ee es es<br>ee ee<br>10000<br>poNePNSS a<br>ER Ne ee<br>po NNT<br>pot NE<br>ERNE<br>1000<br>ee<br>a es<br>a a<br>po NN<br>aa<br>aa<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A] [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 9 ## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FP40R12KT3 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** ## **Vorläufige�Daten Preliminary�Data** **==> picture [410 x 138] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [29 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�RS revision:�2.0 10 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FP40R12KT3 ## **Nutzungsbedingungen** ## application. 11
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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