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FP35R12KT4B15BPSA1
IGBT Module, Seven Pack, 35 A, 1.85 V, 210 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPIM 2
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Solder
- Power Dissipation: 210W
- IGBT Configuration: Seven Pack
- Transistor Mounting: Panel
- DC Collector Current: 35A
- Power Dissipation Pd: 210W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 35A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 53.05 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules
## FP35R12KT4_B15
VCES = 1200V IC nom = 35A / ICRM = 70A
- Hilfsumrichter
-
- Motorantriebe
- Servoumrichter
-
- T yjop = 150°C
- • VCEsat mit • Niedriges V CEsat
-
- Kupferbodenplatte
- Lötverbindungstechnik
- Standardgehäuse
-
-
-
-
-
- T vjop =
- • VCEsat with • Low V CEsat
-
-
-
-
1
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FP35R12KT4_B15
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FP35R12KT4_B15<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>IC nom<br>35<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>70<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>210<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>IC= 35 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,20 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,27<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,00<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,07<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 13Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 13Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 13Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 35 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 13Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, di/dt = 1500 A/µs (Tvj= 150°C)<br>RGon= 13Ω<br>Eon<br>3,50<br>4,60<br>5,05<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 35 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 13Ω<br>Eoff<br>2,10<br>3,10<br>3,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>130<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,72<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,325<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FP35R12KT4_B15
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|35|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|70|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|240<br>|A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>IF= 35 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 35 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||35,0<br>39,0<br>40,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 35 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||3,40<br>6,30<br>7,20||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 35 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||1,15<br>2,25<br>2,55||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,00|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,455||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|70|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|80|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 35 A|VF||0,95||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,85|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,38||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0|||||||
|preparedby:AS|dateofpublication:2013-11-04||||||
|approvedby:RS|revision:2.0||||||
3
## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FP35R12KT4_B15
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values**
|TechnischeInformation/TechnicalInformation<br>FP35R12KT4_B15<br>IGBT-Module<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>15<br>28<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>30<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>105<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,48 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,12<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>0,89<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,03<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 43Ω<br>td on<br>0,065<br>0,065<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 43Ω<br>tr<br>0,06<br>0,065<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 43Ω<br>td off<br>0,21<br>0,28<br>0,285<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 43Ω<br>tf<br>0,17<br>0,20<br>0,225<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGon= 43Ω<br>Eon<br>1,35<br>1,80<br>2,00<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGoff= 43Ω<br>Eoff<br>0,85<br>1,20<br>1,35<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>55<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,40<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,63<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
4
IGBT-Module IGBT-modules FP35R12KT4_B15
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
**Vorläufige�Daten Preliminary�Data**
## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 80°C|VRRM|1200|V|
|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|20,0<br>|A²s|
## **Charakteristische�Werte�/�Characteristic�Values**
||||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,80<br>1,85<br>1,85|2,25|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 400 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||14,0<br>15,0<br>15,0||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 400 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,00<br>1,80<br>2,00||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 400 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,26<br>0,56<br>0,64||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||2,30|K/W|
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,05||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.||
|Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0
5
IGBT-Module IGBT-modules FP35R12KT4_B15
## Technische�Information�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
||||min.|typ.|max.||
|Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,02||K/W|
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||35||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||4,00<br>3,00||mΩ|
|HöchstzulässigeSperrschichttemperatur<br>Maximumjunctiontemperature|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj max|||175<br>150|°C<br>°C|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm|
|Gewicht<br>Weight||G||180||g|
bei Betrieb mit Vge = 0V/+15V empfehlen wir einen Rgon,min von 27 Ohm und eine Rgoff,min von 27 Ohm (siehe AN 2006-01) for operation with Vge= 0V/+15V we recommend a Rgon,min of 27 ohms and a Rgoff,min of 27 ohms (see AN 2006-01)
prepared�by:�AS approved�by:�RS
date�of�publication:�2013-11-04 revision:�2.0
6
## IGBT-Module IGBT-modules
## FP35R12KT4_B15
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I output C characteristic CE) IGBT,Inverter (typical) I output C characteristic CE) IGBT,Inverter (typical)<br>VGE “255 V Tvj =150°C<br>70 70<br>65 Tvj = 25°C 65 VGE = 19V<br>— Tvj = 125°C OL L VGE = 17V L<br>60 Tvj = 150°C pf 60 VVGEGE = 15V = 13V A Le<br>55 PT fk eel ED 55 VVGEGE = 11V = 9V ieleseeee<br>50 Pot TT | / de | 50 pL AA Pe<br>45 45<br>pf LT Ae a reoo<br>40 Pot tt ee 40 Pt | tt ee |<br>35 Pot tt ee 35 Po A ee<br>30 Po tt A 30 poe<br>25 | | | fea | TT | 25 P ot aAee||<br>20 20<br>poti ee po|<br>15 15<br>10 Pt ae 10 ee, eee<br>5 pt tFEyt fT| | c t ttt | 5 ney> 2eee<br>Pe | | | | | | PF<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>I transfer C GE characteristic ) IGBT,Inverter (typical) E switching on C losses off IGBT, C) Inverter (typical)<br>VCE oo VGE ~HeVR Gon 813 Ω ,R Goff =13 Ω ,V CE =600V<br>70 20<br>65 — Tvj = 25°C [ Eon, Tvj = 125°C pee<br>Tvj = 125°C 18 Eoff, Tvj = 125°C<br>60 fF Tvj = 150°C E-H Eon, Tvj = 150°C (|e ee<br>Eoff, Tvj = 150°C<br>16<br>55 fT yT | | | eg I | Het ft TT TT<br>50 ee ee ee ea Pt tt tT tT | tT<br>14 a<br>45 poof [tt] [te | {| | | | | dT rT | | rT TT a<br>12<br>40 ee ee eee SE<br>7 Pt | | tT | TT TT<br>35 nen. 10<br>30 ee cee eleeae<br>8<br>ee a PEP YP tb Lap<br>25<br>a aeae 6 a<br>20<br>15 ae eee 4 Seae<br>Ane | | | | | | er de eT |<br>10<br>2<br>a ec<br>5<br>ne 4eT Ae ee|Pert| er]eee| | dT | | | | |<br>0 0<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60 70<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
7
IGBT-Module IGBT-modules
## FP35R12KT4_B15
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switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =35A,V CE =600V<br>12 1<br>=a EEonoff, T, Tvjvj = 125°C = 125°C P| tL feo TeH— ZthJC : IGBT SO E eee eee<br>Eon, Tvj = 150°C<br>10 f= Eoff, Tvj = 150°C booeeera Aa 2a) |<br>| | | ft EESLZ ZEnn aPLT VAI|ETT el<br>8<br>eS 26 ee eel7200<br>SaaecCORRE ane\~ IiHY<br>64 |ParePTT4 PfWz || dTTE tet| fettTET TLF 4|ddfo 0,1 Poi aa Aeeaaiel| el<br>2 att<br>i: 1 2 3 4<br>ri[K/W]: 0,0432 0,2376 0,2304 0,2088<br>SERSSRREREEE τ i[s]: 0,01 0,02 0,05 0,1 ||<br>PP CLE ‘oo l<br>0 0,01<br>0 20 40 60 80 100 120 140 160 180 200 220 240 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC CE)<br>VGE - ss V,R Goff =13 Ω ,T vj = 150°C<br>80 70<br>IC, Modul 65 Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>EIJI) BAe<br>70 — 60 Tvj = 150°C PE TE<br>55<br>PTE) ee e<br>60<br>50 Pt<br>50 Pte) 45 eee e te<br>40<br>ee eeePit ett tT lg td<br>40 35<br>30<br>PT) FEE<br>30<br>25<br>20 peepee<br>CEPI) SRR eee<br>20<br>15<br>ee eee<br>ee 10 Pt tT TT eA<br>10<br>5<br>PET) EP eee<br>0 0 | TT<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
8
IGBT-Module IGBT-modules
## FP35R12KT4_B15
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**----- Start of picture text -----**<br>
E switching rec F) losses Diode, Inverter (typical) E switching rec G) losses Diode, Inverter (typical)<br>RGon 13 Ω ,V CE =600V IF = 36 AV CE = 600 V<br>3,5 ES 3,5 |<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C Erec, Tvj = 150°C<br>3,0 3,0<br>e ee Ey<br>2,5 2,5<br>SUEDE Eanes PLL TLL LL<br>2,0 eh 2,0 [Gs EanaE<br>TLE) Eee<br>1,5 1,5<br>ALLELE EEE EE<br>1,0 1,0<br>0,5 0,5<br>0,0 0,0<br>0 10 20 30 40 50 60 70 0 20 40 60 80 100 120 140 160 180 200 220 240<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, Gleichrichter (typisch)<br>Z ren thJC impedance Diode, Inverter ome IF F) characteristic of Diode, Rectifier (typical)<br>10 70<br>ZthJC : Diode 65 Tvj = 25°C<br>Tvj = 150°C<br>60<br>HES EA | Se e<br>55<br>PTE TTI TE ET) SeGGeeeeeneee<br>50<br>1<br>e l 45 eee<br>EenT N74J 4035 PittPit TT [eg] ETT [Ey] |<br>30<br>a aI al<br>UAEET 25<br>0,1 / A<br>YrT/T7 TyTT TTTTee 2015 PT | | tt LL VAR Ey<br>7 yey i: 1 2 3 4 10 PT | | | ft tla ye i dd]<br>ri[K/W]: 0,06 0,33 0,32 0,29<br>I T τ i[s]: 0,01 T 0,02 0,05 0,1 5 TTP PPA<br>0,01 AE oromoroo i | = 0 Ee<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br>
9
IGBT-Module IGBT-modules
## FP35R12KT4_B15
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IC =f(V CE) IF =f(V F)<br>VGE =15V<br>30 20<br>Tvj = 25°C Tvj = 25°C<br>Tvj = 125°C 18 Tvj = 125°C<br>Tvj = 150°C<br>/<br>25<br>Ee [Joe] a ee nn e ens<br>16<br>T r HA Ae<br>14<br>20<br>12<br>15 10<br>8<br>10<br>pot | ve | /<br>6<br>Pt | get | tt /<br>4<br>5<br>pt - BEREREP ARE<br>2<br>pot tA | Va<br>0 pievt| | | 0 SERREPi er ?e ZaneEE<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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100000<br>{— | Rtyp S a SeS A eee<br>(a rs ce<br>e e ee eee<br>PERE E EEE EEE<br>10000<br>a ee<br>a<br>Ne ee ee ee ee ee ee ee ee<br>pot TNT tt<br>CAPR<br>PN<br>1000<br>SSS<br>A<br>Pot eee eee<br>pjeeNe eee<br>Pt ftEP tftEE ftTE TTft t T tTTAHAE TT<br>SERRE RRRRRRRREE<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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## Technische�Information�/�Technical�Information
IGBT-Module IGBT-modules FP35R12KT4_B15
**==> picture [86 x 38] intentionally omitted <==**
## **Schaltplan�/�circuit_diagram_headline**
## **Vorläufige�Daten Preliminary�Data**
**==> picture [410 x 138] intentionally omitted <==**
## **Gehäuseabmessungen�/�package�outlines**
prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0
11
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IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br>
## FP35R12KT4_B15
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Nutzungsbedingungen<br>**----- End of picture text -----**<br>
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application.<br>**----- End of picture text -----**<br>
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Updated at April 28, 2026
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