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FP30R06W1E3B11BOMA1
IGBT Module, Three Phase Inverter, 37 A, 1.55 V, 115 mW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPIM Series
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 115mW
- IGBT Configuration: Three Phase Inverter
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Continuous Collector Current: 37A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 18.19 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules ## FP30R06W1E3_B11 VCES = 600V IC nom = 30A / ICRM = 60A - Hilfsumrichter - Klimaanlagen - Motorantriebe - - - - - CEsat - - VCEsat - - CEsat - - VCEsat - Al2O3 Substrat mit kleinem thermischen Widerstand - - - Robuste Montage durch integrierte Befestigungsklammern - Al2O3 - - - Rugged mounting due to integrated mounting clamps 1 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FP30R06W1E3_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FP30R06W1E3_B11<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-05<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 65°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>37<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>115<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,02<br>0,02<br>0,02<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,016<br>0,021<br>0,022<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,14<br>0,16<br>0,18<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,045<br>0,06<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 2100 A/µs (Tvj= 150°C)<br>RGon= 15Ω<br>Eon<br>0,50<br>0,65<br>0,75<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 4200 V/µs (Tvj= 150°C)<br>RGoff= 15Ω<br>Eoff<br>0,60<br>0,75<br>0,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,15<br>1,30<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>1,10<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FP30R06W1E3_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 2100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||44,0<br>48,0<br>49,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 2100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,30<br>2,30<br>2,70||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 2100 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,35<br>0,55<br>0,65||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,60|1,75|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,30||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V| |---|---|---|---|---|---|---| |DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|30|||A| |GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|30|||A| |StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|300<br>245|||A<br>A| |Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|450<br>300|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 30 A|VF||1,00||V| |Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||2,00||mA| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,20|1,35|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,15||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op||||°C| |preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-05<br>revision:2.0||||||| |preparedby:DK|dateofpublication:2013-11-05|||||| |approvedby:MB|revision:2.0|||||| 3 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FP30R06W1E3_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FP30R06W1E3_B11<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-11-05<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 65°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>37<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>115<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 33Ω<br>td on<br>0,04<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 33Ω<br>tr<br>0,023<br>0,031<br>0,032<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 33Ω<br>td off<br>0,23<br>0,25<br>0,26<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 33Ω<br>tf<br>0,035<br>0,04<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 33Ω<br>Eon<br>0,80<br>1,00<br>1,10<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 33Ω<br>Eoff<br>0,60<br>0,80<br>0,85<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,15<br>1,30<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>1,10<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 4 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FP30R06W1E3_B11 **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|12,5<br>9,50<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,00|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||18,0<br>19,0<br>21,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,50<br>0,85<br>1,10||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,11<br>0,20<br>0,26||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||2,90|3,20|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,40||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�DK date�of�publication:�2013-11-05 approved�by:�MB revision:�2.0 5 ## Technische�Information�/�Technical�Information ## IGBT-Module IGBT-modules FP30R06W1E3_B11 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||8,00<br>6,00||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N| |Gewicht<br>Weight||G||24||g| Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt The current under continuous operation is limited to 25 A rms per connector pin prepared�by:�DK date�of�publication:�2013-11-05 approved�by:�MB revision:�2.0 6 IGBT-Module IGBT-modules ## FP30R06W1E3_B11 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>60 60<br>Tvj = 25°C VGE = 19 V<br>54 Tvj = 125°C 54 VGE = 17 V<br>i Tvj = 150°C 7 VGE = 15 V Lie<br>VGE = 13 V<br>48 eee 48 | VGE = 11 V AT<br>VGE = 9 V<br>pp e e Ft e e| |<br>42 42<br>pi A<br>36 36<br>SERRE Ane)‘ /eee<br>30 30<br>24 SERRA 24 eeAe<br>‘<br>18 18 —<br>eee) eee eee A e<br>See[i<br>12 12<br>see eee eee) [ee] [e]<br>SEE Ae<br>6 6<br>[CL]<br>0 0<br>Pie eA [TTT}] VY<br>0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) Schaltverluste IGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT, Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =15 Ω ,R Goff =15 Ω ,V CE =300V<br>60 2,5<br>Tvj = 25°C Eon, Tvj = 125°C<br>54 Tvj = 125°C Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>FEL | te _<br>Eoff, Tvj = 150°C<br>48 2,0<br>42 TT ) We ana<br>36 1,5<br>pf lilly<br>eee ae f —<br>30<br>24 1,0<br>ef | | Lae<br>1812 apf | |geee | 0,5 || HELeALE,oe 7<br>6 e/a aa<br>eae ai<br>0 0,0<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 7 IGBT-Module IGBT-modules ## FP30R06W1E3_B11 **==> picture [486 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> switching losses IGBT,Inverter (typical) transient thermal impedance IGBT, Inverter<br>Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =30A,V CE =300V<br>3,0 10<br>i ET<br>Eon, Tvj = 125°C a“ ZthJH : IGBT oe th<br>Eoff, Tvj = 125°C Le H— S O E ee<br>Eon, Tvj = 150°C<br>2,5 Eoff, Tvj = 150°C a<br>EL [le] a a | |<br>PT) eeoF acnn Conna Cee h||<br>2,0 na S T<br>( eee et<br>1,5 TAAVA 1 Ieall eIl e<br>PT TAA ee<br>| ,oOAw)4 | i ESP|2eTEHTT<br>1,0 WY | ae er ||<br>0,5 rere | 7 24 EIA1<br>i: 1 2 3 4<br>ri[K/W]: 0,1581 0,3892 0,8331 0,8696<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,0 0,1<br>0 20 40 60 80 100 120 140 160 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT, Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =15 Ω ,T vj =150°C<br>66 60<br>IC, Modul Tvj = 25°C<br>60 I C , Chip 54 Tvj = 125°C<br>F— pL ft F Tvj = 150°C L ye<br>poo<br>54<br>ee 48<br>48<br>42<br>eee ee e<br>ps<br>42<br>36<br>36<br>30<br>30<br>24<br>24<br>18<br>18<br>12<br>12<br>6 6<br>ee ee ee | LZ<br>ee<br>0 0<br>ee ee eee<br>0 200 400 600 800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 8 IGBT-Module IGBT-modules ## FP30R06W1E3_B11 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon Ns Ω ,V CE =300V IF = 30 V CE = 300 V<br>1,0 1,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>0,9 Erec, Tvj = 150°C 0,9 Erec, Tvj = 150°C<br>EJ) Ee<br>0,8 0,8<br>e s<br>0,7 a ee 0,7 ee<br>Peaa<br>0,6 0,6<br>aee<br>0,5 0,5<br>a “aa eeNee:<br>0,4 0,4<br>a ee ee<br>0,3 0,3<br>0,2 PA | | | et 0,2 LEEE<br>0,1 0,1<br>0,0 0,0<br>0 10 20 30 40 50 60 0 20 40 60 80 100 120 140 160<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, Gleichrichter (typisch)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJH = f(t) IF =f(V F)<br>10 60<br>(aoe) ZthJH: Diode Totton sseeti eee T — vj = 25°C<br>Tt Tioo T TT 54 Tvj = 150°C<br>| A 48 fn ee ee<br>On ll<br>42<br>UT earLAEeeertmo an TTT t<br>36<br>au eo A T<br>1 30<br>Pall eee<br>A | | '<br>PEPEey TTT 24 Poff tf AP:<br>A a | |||| 1812 PoffPf fftfteELA<br>i: 1 2 3 4<br>H r τ ii[K/W]: [s]: 0,2844 0,0005 e 0,5998 0,005 1,2243 0,05 0,7915 0,2 6 EL<br>ae] Oe<br>0,1 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br> 9 IGBT-Module IGBT-modules ## FP30R06W1E3_B11 **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IF =f(V F)<br>VGE =15V<br>60 20<br>Tvj = 25°C Tvj = 25°C<br>54 Tvj = 125°C 18 Tvj = 125°C<br>48 Per Tvj = 150°C e y7 16 eee Tvj = 150°C<br>42 14<br>pepo ee<br>36 COP e eee 12 E eE<br>30 10<br>24 8<br>18 6<br>12 4<br>SREP see eee eee eee<br>6 2<br>PP veTE err<br>p ref<br>0 0<br>TT TTT] «Leer<br>0,0 0,3 0,6 0,9 1,2 1,5 1,8 2,1 2,4 2,7 3,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> **==> picture [240 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000 —— Rtyp<br>}— fe<br>(Rar ce<br>a<br>ee ee<br>10000<br>a<br>SS a<br>ER Ne ee<br>a Ne ee ee<br>pot NE<br>pp Nf<br>1000<br>a<br>poaa<br>(a NN<br>aa<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 10 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FP30R06W1E3_B11 ## **Schaltplan�/�circuit_diagram_headline** J **Gehäuseabmessungen�/�package�outlines** **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **==> picture [23 x 5] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> **==> picture [86 x 116] intentionally omitted <==** prepared�by:�DK date�of�publication:�2013-11-05 approved�by:�MB revision:�2.0 11 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FP30R06W1E3_B11 **==> picture [110 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Nutzungsbedingungen<br>**----- End of picture text -----**<br> **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> application.<br>**----- End of picture text -----**<br> 12
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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