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FP30R06KE3BOSA1
IGBT Module, PIM Three Phase Input Rectifier, 37 A, 1.55 V, 125 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Product Range: EconoPIM 2
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 125W
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 37A
- Power Dissipation Pd: 125W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 37A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Voltage V(br)ceo: 600V
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 55.28 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FP30R06KE3 **==> picture [86 x 38] intentionally omitted <==** EconoPIM™2�Modul�mit�Trench/Feldstop�IGBT³�und�Emitter�Controlled3�Diode�� EconoPIM™2�module�with�trench/fieldstop�IGBT³�and�Emitter�Controlled3�diode�� ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FP30R06KE3<br>IGBT-Module<br>IGBT-modules|| |---|---| |EconoPIM™2ModulmitTrench/FeldstopIGBT³undEmitterControlled3Diode<br>EconoPIM™2modulewithtrench/fieldstopIGBT³andEmitterControlled3diode<br>preparedby:AS<br>approvedby:WR<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 65°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>37<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>125<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,43 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 56Ω<br>td on<br>0,10<br>0,10<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 56Ω<br>tr<br>0,06<br>0,065<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 56Ω<br>td off<br>0,60<br>0,65<br>0,70<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 56Ω<br>tf<br>0,04<br>0,045<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 600 A/µs (Tvj= 150°C)<br>RGon= 56Ω<br>Eon<br>1,40<br>1,70<br>1,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 2000 V/µs (Tvj= 150°C)<br>RGoff= 56Ω<br>Eoff<br>1,00<br>1,15<br>1,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,20<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,40<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 1 > IGBT-ModuleIGBT-modules FP30R06KE3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|600||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|30|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|60|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>82,0|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>IF= 30 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,05|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 30 A, - diF/dt = 600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||22,0<br>24,0<br>27,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 30 A, - diF/dt = 600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,15<br>2,30<br>2,70||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 30 A, - diF/dt = 600 A/µs (Tvj=150°C)<br>VR= 300 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,12<br>0,30<br>0,36||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,80|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,60||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V| |---|---|---|---|---|---|---| |DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|60|||A| |GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|50|||A| |StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A| |Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 30 A|VF||0,90||V| |Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,85|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,28||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| |preparedby:AS<br>approvedby:WR<br>dateofpublication:2013-10-03<br>revision:2.0||||||| |preparedby:AS|dateofpublication:2013-10-03|||||| |approvedby:WR|revision:2.0|||||| 2 > IGBT-ModuleIGBT-modules FP30R06KE3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FP30R06KE3<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:AS<br>approvedby:WR<br>dateofpublication:2013-10-03<br>revision:2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>600<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 65°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>30<br>37<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>60<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>125<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>IC= 30 A, VGE= 15 V<br>VCE sat<br>1,55<br>1,70<br>1,80<br>2,00<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,43 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>4,9<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,30<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,65<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,051<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 600 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 56Ω<br>td on<br>0,10<br>0,10<br>0,10<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGon= 56Ω<br>tr<br>0,06<br>0,065<br>0,07<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 56Ω<br>td off<br>0,60<br>0,65<br>0,70<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 30 A, VCE= 300 V<br>VGE= ±15 V<br>RGoff= 56Ω<br>tf<br>0,04<br>0,045<br>0,05<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 56Ω<br>Eon<br>1,40<br>1,70<br>1,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 30 A, VCE= 300 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 56Ω<br>Eoff<br>1,00<br>1,15<br>1,20<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 360 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>210<br>150<br>A<br>A<br>Tvj= 25°C<br>Tvj= 150°C<br>tP ≤8 µs,<br>tP ≤6 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,20<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,40<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 3 > IGBT-ModuleIGBT-modules FP30R06KE3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|600|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|15|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|28,0<br>21,0<br>|A²s<br>A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,60<br>1,55<br>1,50|2,05|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||20,0<br>24,0<br>25,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 15 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||0,75<br>1,30<br>1,60||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 15 A, - diF/dt = 1500 A/µs (Tvj=150°C)<br>VR= 300 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,17<br>0,30<br>0,40||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||3,00|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,00||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�WR revision:�2.0 4 IGBT-Module IGBT-modules ## FP30R06KE3 |Modul / Module||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>~~Isolation test voltage~~<br>Material Modulgrundplatte<br>Material of module baseplate|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~|VISOL<br> ~~ee~~||2,5<br>Cu||kV| |Innere Isolation<br>Internal isolation|Basisisolierung (Schutzklasse 1, EN61140)<br>basic insulation (class 1, IEC 61140)|||Al2O3||| |Kriechstrecke<br>Creepage distance|Kontakt - Kuhlk6rper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||10,0||mm| |Luftstrecke<br>Clearance|Kontakt - Kuhlkorper / terminal to heatsink<br>Kontakt - Kontakt / terminal to terminal|||7,5||mm| |Vergleichszahl der Kriechwegbildung<br>Comperative tracking index||CTI||> 225||| ||||min.|typ.|max.|| |Warmewiderstand, Gehause bis Kuhlk6rper| <br>Thermal resistance, case to heatsink|Paste<br>grease<br> pro Modul / per module<br>= 1 W/(m-k)/<br>= 1 W/(m-k)|RthCH||0,02||K/W| |Modulstreuinduktivität<br>Chip<br>~~Stray inductance module~~<br>Modulleitungswiderstand, Anschlusse -<br>Module lead resistance, terminals - chip|TC<br>~~ee ~~<br>= 25°C, pro Schalter / per switch|LsCE<br>RCC'+EE'<br>RAA'+CC'<br> ~~ee ee~~|60<br>4,00<br>3,00<br>~~ee~~|||nH<br>mΩ| |Hoéchstzulassige Sperrschichttemperatur<br>Maximum junction temperature|Wechselrichter, Brems-Chopper/ inverter, brake-chopper<br>Gleichrichter/ rectifier|Tvj max|||175<br>150|°C<br>°C| |Temperatur im Schaltbetrieb<br>Temperature under switching conditions|Wechselrichter, Brems-Chopper/ inverter, brake-chopper<br>Gleichrichter/ rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C| |Lagertemperatur<br>~~Storage temperature~~<br>Anzugsdrehmoment f. Modulmontage<br>Mounting torque for modul mounting|~~ee ~~<br>Schraube M5<br>- Montage gem. giltiger Applikationsschrift<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm| |Gewicht<br>Weight||G||180||g| 5 ## IGBT-Module IGBT-modules Technische Information / FP30R06KE3 Technical Information **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>60 60<br>55 | TTvjvj | = 25°C = 125°C re ae ‘ 55 | VVGEGE = 19 V = 17 V Piel : A | tT<br>Tvj = 150°C VGE = 15 V<br>50 50 VGE = 13 V<br>| rr ee, 7 VGE = 11 V aA7 : | tT<br>45 e e 45 VGE = 9 V<br>7ee | pe| ey<br>e e e 7ea<br>40 40<br>, ; 7<br>35 35<br>ee 2<br>30 30<br>ep<br>25 25<br>ee<br>20 20<br>e e<br>15 15<br>10 ee ee 10 )<br>i 7<br>5 5<br>eee ty tt<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =4+15V,R Gon =56 Ω ,R Goff =56 Ω ,V CE =300V<br>60 5,0<br>Tvj = 25°C Eon, Tvj = 125°C<br>55 Tvj = 125°C 4,5 Eoff, Tvj = 125°C<br>Tvj = 150°C Eon, Tvj = 150°C<br>50 FF | ge a Eoff, Tvj = 150°C<br>4,0<br>45<br>3,5<br>e e | | | | 7<br>40<br>35 fe es esee 3,0 e e<br>30 2,5<br>A<br>25 Z<br>2,0<br>20<br>if 1,5 Z<br>es ae ee ee<br>15<br>i pe |<br>1,0<br>10<br>5 0,5<br>0 EE 0,0 tT |<br>5 6 7 8 9 10 11 12 0 10 20 30 40 50 60<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 6 ## IGBT-Module IGBT-modules ## FP30R06KE3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1 C =30A,V CE =300V<br>5,0 — Eon ——_ , Tvj = 125°C 10 | U== Z =_—— thJC : IGBT ee0... S00; oes sana<br>4,5 = Eoff, Tvj = 125°C |) |) | | | dla ror HH— eEE eeHH} tHee<br>Eon, Tvj = 150°C<br>Eoff, Tvj = 150°C 4 PT TT TT<br>eA a e e |<br>4,03,5 T A inc r<br>1<br>Pee t<br>3,0 YZL a eet et<br>P} ) ft | ker) ty yd | rP T TT T Aeeeeee<br>2,5<br>P} = 0 |<br>2,0 fT ft | | Lee] maaan<br>0,1<br>THy, Leary= | LETTE<br>1,5<br>A (17) TTeee<br>1,0 PL 7earny | | | | | fd | 7Ze| Ti TT TE<br>i: 1 2 3 4<br>0,5 Pe e r τ ii[K/W]: [s]: T 0,072 0,01 0,396 0,02 0,384 0,05 0,348 0,1<br>0,0 0,01<br>0 20 40 60 80 100 120 140 160 180 200 220 240 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =56 Ω ,T vj =150°C<br>70 60<br>IC, Modul Tvj = 25°C<br>IC, Chip 55 Tvj = 125°C<br>= MmUl<br>60 Tvj = 150°C<br>50<br>45<br>50<br>40<br>40 35<br>30<br>30 25<br>20<br>20<br>15<br>10<br>10<br>5<br>ppt Pee<br>0 0<br>0 100 200 300 400 500 600 700 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 7 ## IGBT-Module IGBT-modules ## FP30R06KE3 **==> picture [487 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =56 Ω ,V CE =300V IF =30A,V CE =300V<br>1,0 1,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>0,9 FELee Erec, Tvj = 150°C 0,9 IRE Erec, Tvj = 150°C E<br>0,8 0,8<br>0,7 0,7<br>0,6 0,6<br>0,5 0,5<br>PEE EEE EE tad ttt<br>0,4 0,4<br>St ee tN EE EE<br>0,3 0,3<br>tt | epee See<br>0,2 0,2<br>0,1 0,1<br>0,0 0,0<br>0 5 10 15 20 25 30 35 40 45 50 55 60 0 10 20 30 40 50 60 70 80 90 100 110 120<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br> > IFF =f(V F)) **==> picture [486 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> ZthJC = f(t) IFF =f(V F))<br>10 60<br>Pr —<br>ZthJC : Diode Tvj = 25°C<br>oro H— ssor [L] Fee [ETT] ee 55 F Tvj = 150°C a<br>i| e ie TT 50 i | | S F] Try yyy |<br>45<br>TMT V BP PT ELE EE<br>1 He LIN ETT 40 PLE | Ere<br>aSee ee S eee TT ary<br>PTaTTTTTTTT 3530 P| tot oT ey) dd]<br>||<br>25<br>0,1 20<br>(7 | TTeee<br>ae rTtiTTTTT eo 1510 P| | ft dey yo) dd]<br>i: 1 2 3 4<br>a a ri[K/W]: 0,108 0,594 | 0,576 0,522<br>τ i[s]: 0,01 0,02 0,05 0,1 5<br>ML a<br>0,01 moomo o Ss 0 E P<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0<br>t [s] VF [V]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br> 8 IGBT-Module IGBT-modules ## FP30R06KE3 **==> picture [486 x 606] intentionally omitted <==** **----- Start of picture text -----**<br> I output C characteristic CE) IGBT, Brake-Chopper (typical) forward IF F) characteristic of Diode, Brake-Chopper (typical)<br>VGE<br>60 30<br>Tvj = 25°C 28 Tvj = 25°C<br>55 | Tvj = 125°C rr ee e e Tvj = 125°C n eee<br>Tvj = 150°C 26 Tvj = 150°C<br>Ee | Pt<br>50<br>24<br>a tt tA<br>45<br>22<br>40 ee ee oa 20 SeePP y eeeree<br>a 18<br>35<br>2 ee eeeee<br>16<br>ee ee<br>30<br>ee ee 14 e eee<br>A) ee<br>25<br>12<br>“ P| | | | TT eT<br>ee<br>20 10<br>ee 8<br>15<br>6<br>10<br>ee eee ee ee 4 ee<br>J ee ee<br>5 ey [ae] soe ee 2 e ee ee<br>eZ Pt tt tes<br>0 0<br> | ee<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2<br>VCE [V] VF [V]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>= Rtyp =<br>(Rar ce<br>a<br>p t<br>PEEP<br>10000<br>—————<br>ee<br>a Ne ee ee<br>pot NE<br>pp Nf<br>1000 EEN<br>eees ee<br>(a<br>a ee ee ee ee<br>100 os<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A] [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 9 Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules FP30R06KE3 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** ## **Vorläufige�Daten Preliminary�Data** **==> picture [410 x 138] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** **==> picture [29 x 44] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�WR revision:�2.0 10 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FP30R06KE3 ## **Nutzungsbedingungen** ## application. 11
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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