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FP25R12W1T7B11BPSA1
IGBT Module, PIM Three Phase Input Rectifier, 25 A, 1.6 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:Six N Channel; DC Collector Current:25A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; Transi
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 23Pins
- Product Range: EasyPIM TRENCHSTOP
- IGBT Technology: IGBT 7 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- Transistor Polarity: Six N Channel
- DC Collector Current: 25A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 25A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.6V
- Collector Emitter Saturation Voltage Vce(on): 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 23.97 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FP25R12W1T7_B11
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VCES = 1200V<br>IC nom = 25A / ICRM = 50A<br>**----- End of picture text -----**<br>
- Hilfsumrichter
- Klimaanlagen
- • Motorantriebe
- CEsat
- Trenchstop[TM]
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- Al2O3 Substrat mit kleinem thermischen Widerstand
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- CEsat
- • Trenchstop[TM]
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- Al2O3
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## **Digit**
Datasheet www.infineon.com
2018-12-13
FP25R12W1T7_B11
**==> picture [86 x 38] intentionally omitted <==**
## **Vorläufige�Daten Preliminary�Data**
|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 60°C, Tvj max= 175°C|ICDC|25|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|50|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 25 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,60<br>1,74<br>1,82|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,50 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||0,395||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||4,77||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,017||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||0,0056|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,037<br>0,039<br>0,04||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,02<br>0,024<br>0,025||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,20<br>0,28<br>0,38||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,18<br>0,29<br>0,35||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 25 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 950 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||1,55<br>2,10<br>2,45||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 25 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 2700 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 6,2Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||2,10<br>3,05<br>3,65||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||80<br>75||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||1,55||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
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## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|72,5<br>63,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,83<br>1,70<br>1,63|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 950 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||24,2<br>32,4<br>37,6||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 950 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||2,25<br>3,82<br>4,95||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 950 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||0,65<br>1,41<br>1,87||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||2,04||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
|**Diode,Gleichrichter/Diode,Rectifier**<br>**HöchstzulässigeWerte/MaximumRatedValues**|||||||
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|||V|
|DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TH= 100°C|IFRMSM|<br>25|||A|
|GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TH= 100°C|IRMSM|25|||A|
|StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|300<br>245|||A<br>A|
|Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|450<br>300|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 10 A|VF||0,80||V|
|Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||1,54||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
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Datasheet
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## **Vorläufige�Daten Preliminary�Data**
|**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 60°C, Tvj max= 175°C|ICDC|25|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|50|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 25 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,60<br>1,74<br>1,82|t.b.d.|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 0,50 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V|QG||0,395||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,0||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||4,77||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,017||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V, Tvj= 25°C|ICES|||0,0056|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,058<br>0,06<br>0,061||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,055<br>0,057<br>0,058||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,20<br>0,28<br>0,38||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 25 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,18<br>0,29<br>0,35||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 25 A, VCE= 600 V, Lσ= 35 nH<br>di/dt = 320 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||2,15<br>2,65<br>2,90||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 25 A, VCE= 600 V, Lσ= 35 nH<br>du/dt = 2700 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 10Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||2,10<br>3,05<br>3,65||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤7 µs,|ISC||80<br>75||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT|RthJH||1,55||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
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Datasheet
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## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|27,5<br>24,0|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,72<br>1,59<br>1,52|t.b.d.|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 300 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||8,10<br>10,1<br>11,7||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 300 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||0,74<br>1,37<br>1,84||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 300 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||0,26<br>0,52<br>0,72||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode|RthJH||2,45||K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
V�2.0 2018-12-13
Datasheet
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FP25R12W1T7_B11
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## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5<br>|||kV|
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||AI203||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||8,00<br>6,00||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N|
|Gewicht<br>Weight||G||24||g|
Der Strom im Dauerbetrieb ist auf 25A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25A rms per connector pin. Tvj op > 150°C ist im Überlastbetrieb zulässig. Detaillierte Angaben sind AN 2018-14 zu entnehmen
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14.
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FP25R12W1T7_B11
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## **Vorläufige�Daten Preliminary�Data**
**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V
**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C
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**----- Start of picture text -----**<br>
50 50<br>Tvj = 25°C VGE = 19 V<br>Tvj = 125°C VGE = 17 V<br>45 T vj = 175°C 45 V GE = 15 V<br>VGE = 13 V<br>VGE = 11 V<br>40 40 V GE = 9 V<br>35 35<br>30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V
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50<br>Tvj = 25°C<br>Tvj = 125°C<br>45 T vj = 175°C<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>5 6 7 8 9 10 11 12 13 14<br>VGE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�6.2� Ω ,�RGoff�=�6.2� Ω ,�VCE�=�600�V
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10<br>Eon, Tvj = 125°C<br>Eon, Tvj = 175°C<br>9 E off , T vj = 125°C<br>Eoff, Tvj = 175°C<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35 40 45 50<br>IC [A]<br>**----- End of picture text -----**<br>
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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =25A,V CE =600V VGE =415V,R Gon =62 Ω ,R Goff =62 Ω ,V CE =600V,T vj =175°C<br>10,0 10<br>EEonon, T, Tvjvj = 125°C = 175°C /7 eeY| ttdon r eea<br>9,0 E off , T vj = 125°C / t doff ee<br>Eoff, Tvj = 175°C 7 t f<br>8,0 7<br>7<br>1<br>Wa<br>7,0<br>6,0<br>5,0 0,1<br>Pee<br>4,0<br>3,0<br>-——7 ” - = _— <=<br>/ 0,01 yo |<br>Z<br>2,0 7 [ t<br>1,0<br>0,0 0,001<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>
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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) dv/dt= f(R G)<br>VGE =415V,1 C =25A,V CE =600V,T vj =175°C VGE =+15V,V CE =600V,T vj =25°C<br>10 a a 10 Lf<br>tdon dv/dt,10-90-on at 1/10 Inom<br>t r dv/dt,10-90-off at Inom<br>t doff 9<br>t f<br>8<br>1<br>7<br>6<br>0,1 5<br>ceee ee ee<br>Pee 4 to me~N<br>~<br>3<br>0,01<br>(a 2<br>1<br>0,001 0<br>0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70<br>RG [ Ω ] RG [ Ω ]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>
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## **(RBSOA)**
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ZthJH =f (t)<br>10<br>ZthJH : IGBT<br>ee tt<br>1<br>OePEesnivammat<br>Semaineatall sail email<br>0,1<br>i: 1 2 3 4<br>ri[K/W]: 0,083 0,305 0,763 0,399<br>τ i[s]: 0,000725 0,0137 0,0901 0,448<br>0,01 1<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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IC =f(V CE)<br>VGE ss V,R Goff =62 Ω ,T vj =175°C<br>60<br>IC, Modul<br>55 IC, Chip<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>Pot | |<br>0 200 400 600 800 1000 1200 1400<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
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C=f(V CE) VGE =f(Q G)<br>VGE i OV,T vj = 285°C, f= 100kHz IC = OBA T vj =25°C<br>100 15<br>C ies VCC = 600V<br>| Coes a a<br>C res 12<br>10 ee ee ee es 9<br>6<br>1 HEE 3<br>re<br>0<br>po|<br>0,1 aN -3<br>eeeq ~<br>eeee<br>-6<br>0,01 -9<br>e eee ee ee/<br>-12<br>0,001 CET EEE -15 Jo<br>0 10 20 30 40 50 60 70 80 90 100 0,00 0,10 0,20 0,30 0,40<br>VCE [V] QG [µC]<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>
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> IF =f(V F))
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F =f(V F)) Erec =fi(l F)<br>RGon =6.2 Ω ,V CE =600V<br>50 2,5<br>Tvj = 25°C Erec, Tvj = 125°C<br>Tvj = 125°C Erec, Tvj = 175°C<br>45 T vj = 175°C<br>40 7 2,0 a<br>7<br>/ 7<br>35 1 /<br>30 1,5<br>25<br>20 1,0<br>15<br>10 0,5<br>5 a 7 7a<br>“7<br>0 ueZa 0,0<br>0,0 0,5 1,0 1,5 2,0 2,5 0 5 10 15 20 25 30 35 40 45 50<br>VF [V] IF [A]<br> [A]<br>IF E [mJ]<br>**----- End of picture text -----**<br>
> Erec =f(R G)
> IF =25A,V CE
ZthJH
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2,5 10 aee<br>= EErecrec, T, Tvjvj = 125°C = 175°C | eeHEH ZthJH : Diode eee<br>2,0<br>Seti tientee ee eee<br>\<br>1<br>1,5 SSeopal<br>Set antec ett<br>1,0<br>0,1<br>0,5<br>i: 1 2 3 4<br>ri[K/W]: 0,133 0,33 0,859 0,718<br>τ i[s]: 0,00562 0,00778 0,0473 0,203<br>0,0 0,01<br>0 10 20 30 40 50 60 70 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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IF =f(V F)<br>**----- End of picture text -----**<br>
ZthJH
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20 10<br>Tvj = 25°C ZthJH: Diode<br>Tvj = 150°C<br>18 = |; e reestieenmsete<br>| ft eeetectil eee<br>| noo<br>16<br>a ee|<br>14<br>1<br>12<br>Doe ee | eepo Aee<br>ne<br>10<br>| IC<br>8 |<br>| 0,1 /<br>6<br>/ mete ection<br>4 ee<br>i: 1 2 3 4<br>2 ri[K/W]: 0,086 0,208 0,706 0,54<br>τ i[s]: 0,00145 0,0162 0,0831 0,282<br>_-a po EE TT<br>0 0,01<br>0,0 0,2 0,4 0,6 0,8 1,0 1,2 0,001 0,01 0,1 1 10<br>VF [V] t [s]<br> [A]IF [K/W]thJH<br>Z<br>**----- End of picture text -----**<br>
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IC =f(V CE) IF =f(V F)<br>VGE =15V<br>50 20<br>Tvj = 25°C Tvj = 25°C<br>Tvj = 125°C Tvj = 125°C<br>45 T vj = 175°C 18 T vj = 175°C<br>40 16<br>35 14<br>ee //ee/ / ee es//<br>i/<br>30 // 12<br>li;<br>25 I I; 10<br>20 8<br>Hi /]<br>15 i 6 /// /<br>10 Sf 4<br>5 2<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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## **Vorläufige�Daten Preliminary�Data**
## **NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T)
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100000<br>Rtyp<br>10000<br>1000<br>100<br>0 20 40 60 80 100 120 140 160<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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FP25R12W1T7_B11
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## **Schaltplan�/�Circuit�diagram**
## **Vorläufige�Daten Preliminary�Data**
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J<br>**----- End of picture text -----**<br>
## **Gehäuseabmessungen�/�Package�outlines**
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Infineon<br>**----- End of picture text -----**<br>
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Datasheet
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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