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FP25R12KE3BPSA1
IGBT Module, Seven Pack, 40 A, 1.7 V, 155 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPIM 2
- IGBT Technology: IGBT 3 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 155W
- IGBT Configuration: Seven Pack
- Transistor Mounting: Panel
- DC Collector Current: 40A
- Power Dissipation Pd: 155W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 51.74 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
## Technische�Information�/�Technical�Information > IGBT-ModuleIGBT-modules FP25R12KE3 **==> picture [86 x 38] intentionally omitted <==** EconoPIM™2�mit�Trench/Feldstopp�IGBT3�und�Emitter�Controlled�3�Diode� EconoPIM™2�with�trench/fieldstop�IGBT3�and�Emitter�Controlled�3�diode� ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FP25R12KE3<br>IGBT-Module<br>IGBT-modules|| |---|---| |EconoPIM™2mitTrench/FeldstoppIGBT3undEmitterControlled3Diode<br>EconoPIM™2withtrench/fieldstopIGBT3andEmitterControlled3diode<br>preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-02<br>revision:3.2<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>25<br>40<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>50<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>155<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 25 A, VGE= 15 V<br>IC= 25 A, VGE= 15 V<br>VCE sat<br>1,70<br>2,00<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 1,00 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,24<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>8,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,80<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,064<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 18Ω<br>td on<br>0,09<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 18Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 18Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 25 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 18Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 1000 A/µs<br>RGon= 18Ω<br>Eon<br>1,90<br>2,80<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 25 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 4000 V/µs<br>RGoff= 18Ω<br>Eoff<br>1,75<br>2,40<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>100<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>0,80<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,32<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| 1 > IGBT-ModuleIGBT-modules FP25R12KE3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|25|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|170|||A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,65<br>1,65|2,15|V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||26,0<br>24,0||A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 25 A, - diF/dt = 1000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||2,80<br>5,00||µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1000 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||1,00<br>2,00||mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||1,35|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,535||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V| |---|---|---|---|---|---|---| |DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|50|||A| |GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|60|||A| |StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|450<br>370|||A<br>A| |Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|1000<br>685|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 25 A|VF||0,90||V| |Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||0,90|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,36||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| |preparedby:AS|dateofpublication:2013-10-02| |---|---| |approvedby:RS|revision:3.2| 2 > IGBT-ModuleIGBT-modules FP25R12KE3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **IGBT,�Brems-Chopper�/�IGBT,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FP25R12KE3<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-02<br>revision:3.2<br>**IGBT,Brems-Chopper/IGBT,Brake-Chopper**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>15<br>25<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>30<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>105<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>VCE sat<br>1,70<br>2,00<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,50 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,15<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,10<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,04<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 75Ω<br>td on<br>0,09<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 75Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 75Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 75Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 50 nH<br>VGE= ±15 V<br>RGon= 75Ω<br>Eon<br>1,50<br>2,10<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 50 nH<br>VGE= ±15 V<br>RGoff= 75Ω<br>Eoff<br>1,10<br>1,50<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>60<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,20<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,475<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C|| 3 > IGBT-ModuleIGBT-modules FP25R12KE3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Diode,�Brems-Chopper�/�Diode,�Brake-Chopper Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|V| |---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|10|A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|20,0<br>|A²s| ## **Charakteristische�Werte�/�Characteristic�Values** |||||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,80<br>1,85|2,25|V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||14,0<br>15,0||A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||1,00<br>1,80||µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||0,26<br>0,56||mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC|||2,30|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,915||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�AS date�of�publication:�2013-10-02 approved�by:�RS revision:�3.2 4 > IGBT-ModuleIGBT-modules FP25R12KE3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|2,5|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al203|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||7,5|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proModul/permodule<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,02||K/W| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||60||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||4,00<br>3,00||mΩ| |HöchstzulässigeSperrschichttemperatur<br>Maximumjunctiontemperature|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj max|||150<br>150|°C<br>°C| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj op|-40<br>-40||125<br>150|°C<br>°C| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00|-|6,00|Nm| |Gewicht<br>Weight||G||180||g| bei Betrieb mit Vge = 0V/+15V empfehlen wir einen Rgon,min von 36 Ohm und eine Rgoff,min von 36 Ohm (siehe AN 2006-01) for operation with Vge= 0V/+15V we recommend a Rgon,min of 36 ohms and a Rgoff,min of 36 ohms (see AN 2006-01) prepared�by:�AS approved�by:�RS date�of�publication:�2013-10-02 revision:�3.2 5 ## IGBT-Module IGBT-modules Technische Information / FP25R12KE3 Technical Information **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>50 a | 7 50 es | :<br>Tvj = 25°C VGE = 19V<br>45 ( Tvj = 125°C ee 45 | VGE = 17V Lye<br>VGE = 15V<br>VGE = 13V<br>40 ee 40 VGE = 11V<br>/ ee | VGE = 9V aora<br>e e f 4<br>35 35<br>ee ee e e<br>|tv E e<br>30 30<br>Pt | es<br>eae ae<br>25 25<br>/<br>/<br>2015 ee ee 2015 7PT | |<br>ee<br>10 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>Ubertragungscharakteristik IGBT,Wechselrichter (typisch) SchaltverlustelGBT,Wechselrichter (typisch)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =+15V,R Gon =18 Ω ,R Goff =18 Ω ,V CE =600V<br>50 11<br>Tvj = 25°C Eon, Tvj = 125°C<br>45 Tvj = 125°C 10 Eoff, Tvj = 125°C<br>(ey eeee<br>9<br>40<br>8<br>e e e e e<br>35<br>7<br>30<br>6<br>An<br>25<br>5<br>aae SERRE<br>20<br>4<br>15<br>3<br>10 ptoe [pA] / aeA |) yeSERREramieee<br>5 t 21 e<br>pi] iy) Pteat<br>Piet<br>0 0<br>| | | | CET TT<br>5 6 7 8 9 10 11 12 0 5 10 15 20 25 30 35 40 45 50<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 6 ## IGBT-Module IGBT-modules ## FP25R12KE3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =25A,V CE =600V<br>5,0 | 1 ee<br>Eon, Tvj = 125°C | ZthJC : IGBT eee<br>4,54,0 T Eoff, Tvj = 125°C ]. | | jera | i| 11 Ti 7 Tite 7TE| T TTT<br>Pf | df UeZ| TA ME EE| |<br>3,5<br>aoe I<br>3,0<br>eaeZO /il<br>2,5 0,1 A<br>Yr VY TT t T T<br>Po | PP] yt (1 AL TTT TT TT TTTTTT TTT]<br>2,0<br>Pf ff fff aT/7]7 TU oT TT OE TTTi TST TTT<br>1,5<br>Poff} ff Pf a a a| lI l<br>1,0<br>i: 1 2 3 4<br>0,5 | r τ ii[K/W]: [s]: 0,09025 0,002345 0,3612 0,0282 | 0,2031 0,1128 0,1403 0,282 |<br>0,0 PE | | te 0,01 ALN oo l<br>0 10 20 30 40 50 60 70 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ee V,R Goff =18 Ω ,T vj =125°C<br>55 50<br>IC, Modul Tvj = 25°C<br>50 Mm I C , Chip LL) | 45 | Tvj = 125°C J<br>= SO [i<br>Pe]<br>45 | Td 40<br>40<br>35<br>35<br>30<br>30<br>25<br>25<br>20<br>20 eee pf | vf fT<br>15<br>15<br>se a ee<br>10<br>10<br>5 5<br>+ tft 7 a<br>0 Pot tt 0 LY<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 7 IGBT-Module IGBT-modules ## FP25R12KE3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f (I F) Erec =f(R G)<br>RGon =18 Ω ,V CE =600V IF =25A,V CE =600V<br>3,0 3,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>2,5 2,5<br>2,0 2,0<br>yay LE<br>1,5 1,5<br>eee<br>1,0 1,0<br>0,5 0,5<br>0,0 0,0<br>0 5 10 15 20 25 30 35 40 45 50 0 10 20 30 40 50 60 70<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, Gleichrichter (typisch)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJC =f (t) IF =f(V F)<br>10 et 50 ————————— }<br>ZthJC : Diode Tvj = 25°C<br>ooqq o Foe 45 (ee Tvj = 150°C |<br>rT TT T T TT<br>40<br>He EE<br>35<br>THM<br>1 Pt Tie e E T E E<br>re<br>eet|et 30 PL] ty typ<br>a|2ee 25 Pi] tT ft LR<br>Pt Et<br>Pt TAT TP 20 Pi] tf ty pad<br>741<br>0,1<br>15<br>A<br>Po eee !<br>rT TT TT TT 10 PL EEL ELLA ELL<br>i: 1 2 3 4<br>0Sn | r τ ii[K/W]: [s]: 0,1375 0,003333 0,888 0,03429 e 0,2558 0,1294 e 0,08101 0,7662 rs 5 or 7<br>rome o LEE<br>0,01 0 a ET<br>0,001 0,01 0,1 1 10 0,0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br> 8 IGBT-Module IGBT-modules ## FP25R12KE3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IF =f(V F)<br>VGE =15V<br>30 30<br>Tvj = 25°C Tvj = 25°C<br>Tvj = 125°C Tvj = 125°C<br>c<br>25 | 25<br>20 20<br>15 / 15 Zz<br>10 10<br>5 5<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5<br>VCE [V] VF [V]<br>NTC-Widerstand-Temperaturkennlinie (typisch)<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000 a SS SS ES SS SS SE<br>t Rtyp a eee<br>}— fe<br>(Rar ce<br>a ee es es<br>ee ee<br>10000<br>NePNSS a<br>ER Ne ee<br>po NNT<br>pot NE<br>ERNE<br>1000<br>ee<br>a es<br>a a<br>po NN<br>aa<br>aa<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A] [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 9 Technische�Information�/�Technical�Information IGBT-ModuleIGBT-modules FP25R12KE3 **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�circuit_diagram_headline** **==> picture [410 x 138] intentionally omitted <==** ## **Gehäuseabmessungen�/�package�outlines** prepared�by:�AS date�of�publication:�2013-10-02 approved�by:�RS revision:�3.2 10 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> ## FP25R12KE3 ## **Nutzungsbedingungen** application. 11
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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