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FP15R12W1T7BOMA1
IGBT Module, PIM, 15 A, 1.6 V, 175 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPIM TRENCHSTOP
- IGBT Technology: IGBT 7
- IGBT Termination: Solder
- Power Dissipation: -
- IGBT Configuration: PIM
- Transistor Mounting: Panel
- DC Collector Current: 15A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 15A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.6V
- Collector Emitter Saturation Voltage Vce(on): 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 23.98 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FP15R12W1T7** **EasyPIM[™] module** ## **Preliminary datasheet** ## **EasyPIM[™] module with TRENCHSTOP[™] IGBT7 and Emitter Controlled 7 diode and NTC** ## **Features** - Electrical features - TRENCHSTOP[TM] IGBT7 - Overload operation up to 175°C - Low VCEsat - Mechanical features - High power density - Solder contact technology - 2.5 kV AC 1 min insulation - Al2O3 substrate with low thermal resistance - Compact design ## **Potential applications** - Auxiliary inverters - Motor drives - Air conditioning ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, Rectifier**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**IGBT, Brake-Chopper**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**Diode, Brake-Chopper**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8| |**7**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**8**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10| |**9**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16| |**10**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| |**11**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| Datasheet 2 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|2.5|kV| |Internal Isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|11.5|mm| |Creepage distance|_d_Creep|terminal to terminal|6.3|mm| |Clearance|_d_Clear|terminal to heatsink|10.0|mm| |Clearance|_d_Clear|terminal to terminal|5.0|mm| |Comparative tracking index|_CTI_||> 200|| |RTI Elec.|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE|||30||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TH=25°C, per switch||6||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TH=25°C, per switch||8||mΩ| |Storage temperature|_T_stg||-40||125|°C| |Mounting force per clamp|_F_||20||50|N| |Weight|_G_|||24||g| _Note: The current under continuous operation is limited to 30A rms per connector pin._ ## **2 IGBT, Inverter** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Continous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 110 °C|15|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||30|A| |Gate-emitter peak voltage|_V_GES|||±20|V| Datasheet 3 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 15 A,_V_GE= 15 V|_T_vj= 25 °C||1.60|TBD|V| ||||_T_vj= 125 °C||1.74||| ||||_T_vj= 175 °C||1.82||| |Gate threshold voltage|_V_GEth|_I_C= 0.553 mA, VCE= VGE,_T_vj= 25 °C||5.15|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 600 V|||0.234||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||2.82||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.0099||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||0.003|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 15 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 7.5 Ω|_T_vj= 25 °C||0.023||µs| ||||_T_vj= 125 °C||0.025||| ||||_T_vj= 175 °C||0.026||| |Rise time (inductive load)|_t_r|_I_C= 15 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 7.5 Ω|_T_vj= 25 °C||0.012||µs| ||||_T_vj= 125 °C||0.015||| ||||_T_vj= 175 °C||0.016||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 15 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gof= 7.5 Ω|_T_vj= 25 °C||0.144||µs| ||||_T_vj= 125 °C||0.190||| ||||_T_vj= 175 °C||0.256||| |Fall time (inductive load)|_t_f|_I_C= 15 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gof= 7.5 Ω|_T_vj= 25 °C||0.199||µs| ||||_T_vj= 125 °C||0.301||| ||||_T_vj= 175 °C||0.329||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 15 A,_V_CE= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 7.5 Ω, di/dt = 750<br>A/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.87||mJ| ||||_T_vj= 125 °C||1.21||| ||||_T_vj= 175 °C||1.45||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 15 A,_V_CE= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 7.5 Ω, dv/dt =<br>4000 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.922||mJ| ||||_T_vj= 125 °C||1.44||| ||||_T_vj= 175 °C||1.8||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 8 µs,<br>_T_vj= 150 °C||48||A| ||||_t_P≤ 7 µs,<br>_T_vj= 175 °C||45||| Datasheet 0.10 4 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**Characteristic values (continued)**|**Table 4**<br>**Characteristic values (continued)**|**Table 4**<br>**Characteristic values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Thermal resistance, junction<br>to heatsink|_R_thJH|per IGBT||1.80||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|||| |---|---|---|---|---|---| |**Table 5**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continous DC forward<br>current|_I_F|||10|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||20|A| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|27.5|A²s| ||||_T_vj= 175 °C|24|| ## **Table 6 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 10 A,_V_GE= 0 V|_T_vj= 25 °C||1.72|TBD|V| ||||_T_vj= 125 °C||1.59||| ||||_T_vj= 175 °C||1.52||| |Peak reverse recovery<br>current|_I_RM|_I_F= 10 A,_V_R= 600 V,<br>_V_GE= -15 V, -diF/dt = 700<br>A/µs (Tvj= 175 °C)|_T_vj= 25 °C||15.5||A| ||||_T_vj= 125 °C||19.2||| ||||_T_vj= 175 °C||22.5||| |Recovered charge|_Q_r|_I_F= 10 A,_V_R= 600 V,<br>_V_GE= -15 V, -diF/dt = 700<br>A/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.82||µC| ||||_T_vj= 125 °C||1.46||| ||||_T_vj= 175 °C||2.05||| |Reverse recovery energy|_E_rec|_I_F= 10 A,_V_R= 600 V,<br>_V_GE= -15 V, -diF/dt = 700<br>A/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.31||mJ| ||||_T_vj= 125 °C||0.57||| ||||_T_vj= 175 °C||0.82||| Datasheet 0.10 5 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, Rectifier** |**Table 6**<br>**Characteristic values (continued)**|**Table 6**<br>**Characteristic values (continued)**|**Table 6**<br>**Characteristic values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Thermal resistance, junction<br>to heatsink|_R_thJH|per diode||2.51||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **4** ## **Diode, Rectifier** |**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**|||| |---|---|---|---|---|---| |**Table 7**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj= 25 °C||1600|V| |Maximum RMS forward<br>current per chip|_I_FRMSM|_T_H= 100 °C||25|A| |Maximum RMS current at<br>rectifier output|_I_RMSM|_T_H= 100 °C||25|A| |Surge forward current|_I_FSM|_t_P= 10 ms|_T_vj= 25 °C|300|A| ||||_T_vj= 150 °C|245|| |I2t - value|_I_2_t_|_t_P= 10 ms|_T_vj= 25 °C|450|A²s| ||||_T_vj= 150 °C|300|| **Table 8 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 10 A|_T_vj= 150 °C||0.80||V| |Reverse current|_I_r|_T_vj= 150 °C,_V_R= 1600 V|||1||mA| |Thermal resistance, junction<br>to heatsink|_R_thJH|per diode|||1.54||K/W| |Temperature under<br>switching conditions|_T_vj, op|||-40||150|°C| Datasheet 6 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 IGBT, Brake-Chopper** ## **5 IGBT, Brake-Chopper** |**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**| |---|---|---|---|---|---| |**Table 9**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1200|V| |Continous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_H= 110 °C|15|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms||30|A| |Gate-emitter peak voltage|_V_GES|||±20|V| ## **Table 10 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 15 A,_V_GE= 15 V|_T_vj= 25 °C||1.60|TBD|V| ||||_T_vj= 125 °C||1.74||| ||||_T_vj= 175 °C||1.82||| |Gate threshold voltage|_V_GEth|_I_C= 0.553 mA, VCE= VGE,_T_vj= 25 °C||5.15|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CE= 600 V|||0.234||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||2.82||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.0099||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,_V_GE= 0 V|_T_vj= 25 °C|||0.003|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 15 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 7.5 Ω|_T_vj= 25 °C||0.023||µs| ||||_T_vj= 125 °C||0.025||| ||||_T_vj= 175 °C||0.026||| |Rise time (inductive load)|_t_r|_I_C= 15 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gon= 7.5 Ω|_T_vj= 25 °C||0.012||µs| ||||_T_vj= 125 °C||0.015||| ||||_T_vj= 175 °C||0.016||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 15 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gof= 7.5 Ω|_T_vj= 25 °C||0.144||µs| ||||_T_vj= 125 °C||0.190||| ||||_T_vj= 175 °C||0.256||| |Fall time (inductive load)|_t_f|_I_C= 15 A,_V_CE= 600 V,<br>_V_GE= ±15 V,_R_Gof= 7.5 Ω|_T_vj= 25 °C||0.199||µs| ||||_T_vj= 125 °C||0.301||| ||||_T_vj= 175 °C||0.329||| Datasheet 0.10 7 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, Brake-Chopper** |**Table 10**<br>**Characteristic values (continued)**|**Table 10**<br>**Characteristic values (continued)**|**Table 10**<br>**Characteristic values (continued)**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 15 A,_V_CE= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gon= 7.5 Ω, di/dt = 750<br>A/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.87||mJ| ||||_T_vj= 125 °C||1.21||| ||||_T_vj= 175 °C||1.45||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 15 A,_V_CE= 600 V,<br>_L_σ= 35 nH,_V_GE= ±15 V,<br>_R_Gof= 7.5 Ω, dv/dt =<br>4000 V/µs (Tvj= 175 °C)|_T_vj= 25 °C||0.922||mJ| ||||_T_vj= 125 °C||1.44||| ||||_T_vj= 175 °C||1.8||| |SC data|_I_SC|_V_GE≤ 15 V,_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 8 µs,<br>_T_vj= 150 °C||48||A| ||||_t_P≤ 7 µs,<br>_T_vj= 175 °C||45||| |Thermal resistance, junction<br>to heatsink|_R_thJH|per IGBT|||1.80||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **6 Diode, Brake-Chopper** |**6**<br>**Diode, Brake-Chopper**|**6**<br>**Diode, Brake-Chopper**|**6**<br>**Diode, Brake-Chopper**|||| |---|---|---|---|---|---| |**Table 11**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1200|V| |Continous DC forward<br>current|_I_F|||10|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||20|A| |I2t - value|_I_2_t_|_V_R= 0 V,_t_P= 10 ms|_T_vj= 125 °C|27.5|A²s| ||||_T_vj= 175 °C|24|| Datasheet 8 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 NTC-Thermistor** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 12**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 10 A,_V_GE= 0 V|_T_vj= 25 °C||1.72|TBD|V| ||||_T_vj= 125 °C||1.59||| ||||_T_vj= 175 °C||1.52||| |Peak reverse recovery<br>current|_I_RM|_I_F= 10 A,_V_R= 600 V,<br>-diF/dt = 700 A/µs<br>(Tvj= 175 °C)|_T_vj= 25 °C||15.5||A| ||||_T_vj= 125 °C||19.2||| ||||_T_vj= 175 °C||22.5||| |Recovered charge|_Q_r|_I_F= 10 A,_V_R= 600 V,<br>-diF/dt = 700 A/µs<br>(Tvj= 175 °C)|_T_vj= 25 °C||0.82||µC| ||||_T_vj= 125 °C||1.46||| ||||_T_vj= 175 °C||2.05||| |Reverse recovery energy|_E_rec|_I_F= 10 A,_V_R= 600 V,<br>-diF/dt = 700 A/µs<br>(Tvj= 175 °C)|_T_vj= 25 °C||0.31||mJ| ||||_T_vj= 125 °C||0.57||| ||||_T_vj= 175 °C||0.82||| |Thermal resistance, junction<br>to heatsink|_R_thJH|per diode|||2.45||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **7 NTC-Thermistor** **Table 13 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet 9 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V **output characteristic (typical), IGBT, Inverter** IC = f(VCE) T = 175 °C vj **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> 30 30<br>25 25<br>20 20<br>15 15<br>10 10<br>5 5<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>transfer characteristic (typical), IGBT, Inverter switching losses (typical), IGBT, Inverter<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 30 5.0<br>27 4.5<br>24 4.0<br>21 3.5<br>18 3.0<br>15 2.5<br>12 2.0<br>9 1.5<br>6 1.0<br>3 0.5<br>0 0.0<br>5 6 7 8 9 10 11 12 13 14 0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> Datasheet 10 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **switching losses (typical), IGBT, Inverter** ## E = f(RG) IC = 15 A, VCE = 600 V, VGE = ± 15 V ## **switching times (typical), IGBT, Inverter** t = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [539 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0 10<br>4.5<br>4.0 1<br>3.5<br>3.0 0.1<br>2.5<br>2.0 0.01<br>1.5<br>1.0 0.001<br>0.5<br>0.0 0.0001<br>0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30<br>switching times (typical), IGBT, Inverter transient thermal impedance , IGBT, Inverter<br>t = f(RG) Zth = f(t)<br>IC = 15 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C<br>10 10<br>1<br>0.1 1<br>0.01<br>0.001 0.1<br>0 10 20 30 40 50 60 70 80 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet 0.10 2021-03-17 11 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **==> picture [539 x 324] intentionally omitted <==** **----- Start of picture text -----**<br> dv/dt (typical), IGBT, Inverter reverse bias safe operating area (RBSOA), IGBT,<br>dv/dt = f(RG) Inverter<br>IC = 15 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C IC = f(VCE)<br>RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 175 °C<br>10 35<br>9<br>30<br>8<br>25<br>7<br>6<br>20<br>5<br>15<br>4<br>3<br>10<br>2<br>5<br>1<br>0 0<br>0 10 20 30 40 50 60 70 80 0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> capacity characteristic (typical), IGBT, Inverter gate charge characteristic (typical), IGBT, Inverter<br>C = f(VCE) VGE = f(QG)<br>Tvj = 25 °C, f = 100 kHz, VGE = 0 V IC = 15 A, Tvj = 25 °C<br>10 15<br>10<br>1<br>5<br>0.1 0<br>-5<br>0.01<br>-10<br>0.001 -15<br>0 10 20 30 40 50 60 70 80 90 100 0.00 0.05 0.10 0.15 0.20 0.25<br>**----- End of picture text -----**<br> Datasheet 12 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **forward characteristic (typical), Diode, Inverter** IF = f(VF) **switching losses (typical), Diode, Inverter** Erec = f(IF) RGon = 7.5 Ω, VCE = 600 V **==> picture [539 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 20 1.2<br>1.1<br>18<br>1.0<br>16<br>0.9<br>14<br>0.8<br>12<br>0.7<br>10 0.6<br>0.5<br>8<br>0.4<br>6<br>0.3<br>4<br>0.2<br>2<br>0.1<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 0 2 4 6 8 10 12 14 16 18 20<br>switching losses (typical), Diode, Inverter transient thermal impedance , Diode, Inverter<br>Erec = f(RG) Zth = f(t)<br>VCE = 600 V, IF = 10 A<br>1.0 10<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5 1<br>0.4<br>0.3<br>0.2<br>0.1<br>0.0 0.1<br>0 10 20 30 40 50 60 70 80 0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet 13 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **forward characteristic (typical), Diode, Rectifier transient thermal impedance , Diode, Rectifier** IF = f(VF) Zth = f(t) **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>18<br>16<br>14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>**----- End of picture text -----**<br> **output characteristic (typical), IGBT, Brake-Chopper** IC = f(VCE) VGE = 15 V **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **forward characteristic (typical), Diode, BrakeChopper** IF = f(VF) **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 30 20<br>18<br>25<br>16<br>14<br>20<br>12<br>15 10<br>8<br>10<br>6<br>4<br>5<br>2<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> Datasheet 0.10 2021-03-17 14 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **==> picture [539 x 292] intentionally omitted <==** **----- Start of picture text -----**<br> temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet 0.10 2021-03-17 15 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Circuit diagram** **9 Circuit diagram** **==> picture [528 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> **Figure 2** Datasheet 16 0.10 2021-03-17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Package outlines** **==> picture [177 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 10 Package outlines<br>**----- End of picture text -----**<br> **==> picture [25 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Infineon<br>**----- End of picture text -----**<br> **==> picture [96 x 130] intentionally omitted <==** **==> picture [138 x 91] intentionally omitted <==** **Figure 3** Datasheet 0.10 2021-03-17 17 **FP15R12W1T7 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **11 Module label code** ## **11 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 4** Datasheet 18 0.10 2021-03-17 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2021-03-17 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2021 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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