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FP15R12W1T4B3BOMA1
IGBT Module, PIM Three Phase Input Rectifier, 15 A, 1.85 V, 130 W, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPIM
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 130W
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- DC Collector Current: 15A
- Power Dissipation Pd: 130W
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 15A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.85V
- Collector Emitter Saturation Voltage Vce(on): 1.85V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 20.09 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Module IGBT-modules ## FP15R12W1T4_B3 J VCES = 1200V IC nom = 15A / ICRM = 30A - Hilfsumrichter - Klimaanlagen - • Motorantriebe - - - - - - VCEsat mit - • Niedriges V CEsat - - - VCEsat with - • Low V CEsat - Al2O3 Substrat mit kleinem thermischen Widerstand - - Lötverbindungstechnik - Robuste Montage durch integrierte Befestigungsklammern - Al2O3 - - - Rugged mounting due to integrated mounting clamps 1 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FP15R12W1T4_B3 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **IGBT,Wechselrichter�/�IGBT,Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |TechnischeInformation/TechnicalInformation<br>FP15R12W1T4_B3<br>IGBT-Module<br>IGBT-modules|| |---|---| |preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.3<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TC= 100°C, Tvj max= 175°C<br>TC= 25°C, Tvj max= 175°C<br>IC nom<br>IC<br>15<br>28<br>A<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>30<br>A<br>Gesamt-Verlustleistung<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>130<br>W<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 0,48 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,12<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>0,89<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,03<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 39Ω<br>td on<br>0,055<br>0,055<br>0,055<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 39Ω<br>tr<br>0,059<br>0,065<br>0,065<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 39Ω<br>td off<br>0,195<br>0,275<br>0,28<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 39Ω<br>tf<br>0,145<br>0,19<br>0,215<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 50 nH<br>VGE= ±15 V, di/dt = 550 A/µs (Tvj= 150°C)<br>RGon= 39Ω<br>Eon<br>1,30<br>1,75<br>1,95<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 50 nH<br>VGE= ±15 V, du/dt = 3500 V/µs (Tvj= 150°C)<br>RGoff= 39Ω<br>Eoff<br>0,83<br>1,20<br>1,35<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>55<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase<br>proIGBT/perIGBT<br>RthJC<br>1,05<br>1,15<br>K/W<br>Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink<br>proIGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>1,05<br>K/W<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| 2 ## Technische�Information�/�Technical�Information IGBT-Module IGBT-modules FP15R12W1T4_B3 **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter** ## **Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|15|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|16,0<br>14,0|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||2,00<br>2,10<br>2,10|2,65|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 550 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||13,0<br>12,0<br>12,0||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 15 A, - diF/dt = 550 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||1,20<br>2,05<br>2,40||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 15 A, - diF/dt = 550 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,37<br>0,68<br>0,80||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,75|1,90|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,30||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **Diode,�Gleichrichter�/�Diode,�Rectifier Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V| |---|---|---|---|---|---|---| |DurchlassstromGrenzeffektivwertproChip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|30|||A| |GleichrichterAusgangGrenzeffektivstrom<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|30|||A| |StoßstromGrenzwert<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|300<br>245|||A<br>A| |Grenzlastintegral<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|450<br>300|||A²s<br>A²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|Tvj= 150°C, IF= 15 A|VF||0,85||V| |Sperrstrom<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA| |Wärmewiderstand,ChipbisGehäuse<br>Thermalresistance,junctiontocase|proDiode/perdiode|RthJC||1,20|1,35|K/W| |Wärmewiderstand,GehäusebisKühlkörper<br>Thermalresistance,casetoheatsink|proDiode/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||1,15||K/W| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| |preparedby:DK<br>approvedby:MB<br>dateofpublication:2013-10-03<br>revision:2.3||||||| |preparedby:DK|dateofpublication:2013-10-03|||||| |approvedby:MB|revision:2.3|||||| 3 IGBT-Module IGBT-modules FP15R12W1T4_B3 ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.<br>typ.||max.|| |Nennwiderstand<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|2,5|||kV| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||AI203|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||11,5<br>6,3|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||10,0<br>5,0|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||30||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TC=25°C,proSchalter/perswitch|RCC'+EE'<br>RAA'+CC'||8,00<br>6,00||mΩ| |HöchstzulässigeSperrschichttemperatur<br>Maximumjunctiontemperature|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj max|||175<br>150|°C<br>°C| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions|Wechselrichter,Brems-Chopper/inverter,brake-chopper<br>Gleichrichter/rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Anpresskraft für mech. Bef. pro Feder<br>mountig force per clamp||F|20|-|50|N| |Gewicht<br>Weight||G||24||g| Der Strom im Dauerbetrieb ist auf 30A effektiv pro Anschlusspin begrenzt. The current under continuous operation is limited to 30A rms per connector pin. prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.3 4 IGBT-Module IGBT-modules ## FP15R12W1T4_B3 **==> picture [486 x 279] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>30 | , 30 es | fos<br>Tvj = 25°C VGE = 19 V<br>27 Tvj = 125°C py ra Z 27 VGE = 17 V a / 7<br>Tvj = 150°C ! ee | Y VGE = 15 V LAE | be<br>VGE = 13 V<br>24 ee 24 VGE = 11 V UE AL<br>VGE = 9 V<br>21 21<br>Pp a e d e<br>18 Beane 18 eee aes<br>PPA ee<br>15 15<br>12 12<br>/ [/]<br>/<br>9 9<br>6 6<br>ee ee eeee<br>3 3<br>eA ee), Ace<br>t7<br>0 0<br>| ttt) LA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **==> picture [485 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =4+15V,R Gon =39 Ω ,R Goff =39 Ω ,V CE =600V<br>30 8<br>Tvj = 25°C Eon, Tvj = 125°C<br>27 Tvj = 125°C Eon, Tvj = 150°C<br>Tvj = 150°C 7 Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>24<br>Bop Eby<br>6<br>21<br>pp ee n s<br>e/a 5 /<br>18<br>15 4<br>12<br>3<br>9<br>2<br>i ee Zea<br>6<br>1<br>3<br>0 0<br>5 6 7 8 9 10 11 12 13 0 5 10 15 20 25 30<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Module IGBT-modules FP15R12W1T4_B3 **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH = f(t)<br>VGE =+15V,1 C =15A,V CE =600V<br>9,0 a 10 rr<br>Eon, Tvj = 125°C ZthJH : IGBT<br>[= Eon, Tvj = 150°C r i tf pi | H— SOee E e e ee<br>8,0 Eoff, Tvj = 125°C a ee |<br>Eoff, Tvj = 150°C<br>ee o a a | |<br>a y, a<br>7,0<br>6,0<br>2 0 ee<br>5,0 tt er T l<br>1<br>y 4 ESSve<br>4,0 WA a a |<br>Pt | ae tf | |] | |a 2eT<br>3,0 Beaa a re a724ieeene et ||<br>2,0<br>i: 1 2 3 4<br>1,0 PFetcke ri[K/W]: 0,154 0,345 0,865 0,736<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>te]<br>PEEP} LIbol l<br>0,0 0,1<br>0 40 80 120 160 200 240 280 320 360 400 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE ve V,R Goff =39 Ω ,T vj =150°C<br>33 30<br>IC, Modul Tvj = 25°C<br>30 I C , Chip 27 Tvj = 125°C<br>Fe LL tf F Tvj = 150°C E de |<br>27<br>24<br>24 Py d+ bP ee ee<br>eee 21 ee<br>21<br>18<br>18<br>15<br>a<br>15<br>12<br>12 a ORE ae<br>9<br>9<br>ee 6 ee<br>6<br>3 3<br>a at |<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 IGBT-Module IGBT-modules FP15R12W1T4_B3 **==> picture [487 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f(I F) Erec =f(R G)<br>RGon an Ω ,V CE =600V IF - ten CE = 600 V<br>1,4 1,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>Erec, Tvj = 150°C 0,9 Erec, Tvj = 150°C<br>1,2 ee ee ee<br>0,8<br>1,0<br>0,7<br>0,6<br>0,8<br>P| ey = ENERO<br>0,5<br>eae PENG EE<br>0,6 ee ee<br>0,4<br>po}PKL ess<br>0,3<br>0,4 / Ne eed<br>0,2<br>0,2<br>0,1<br>0,0 0,0<br>0 5 10 15 20 25 30 0 40 80 120 160 200 240 280 320 360 400<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Durchlasskennlinie der Diode, Gleichrichter (typisch)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJH =f (t) IF =f(V F)<br>10 a | 30 eees<br>ZthJH : Diode Tvj = 25°C<br>H—a|Fooee nn Tvj = 150°C<br>a Ey iyi<br>| | el 25<br>PLPETE PEE EPT<br>LLa T 20<br>ce<br>CET LEE<br>1 15<br>|Sea TATaTT Lt |<br>72 |<br>|| 10<br>a<br>5<br>i: 1 2 3 4<br>i tie ri[K/W]: 0,404 0,664 1,174 s 0,808 oeOI<br>τ i[s]: 0,0005 0,005 0,05 0,2<br>0,1 0<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJH [A]IF<br>Z<br>**----- End of picture text -----**<br> 7 IGBT-Module IGBT-modules ## FP15R12W1T4_B3 **==> picture [240 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>__ Rtyp —_————<br>Rar ce<br>a<br>ee<br>a e eeeee<br>10000 Kit| | |<br>————<br>EE Ne ee ee ee<br>a<br>PoE NN<br>pp Nf<br>1000 EaeNEeEe<br>——————<br>po NN<br>aa<br>aee seee eeeeeeee<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br> 8 **==> picture [523 x 338] intentionally omitted <==** **----- Start of picture text -----**<br> Technische�Information�/�Technical�Information<br>IGBT-Module<br>IGBT-modules FP15R12W1T4_B3<br>Vorläufige�Daten<br>Preliminary�Data<br>Schaltplan�/�circuit_diagram_headline<br>J<br>Gehäuseabmessungen�/�package�outlines<br>Infineon<br>**----- End of picture text -----**<br> **==> picture [89 x 120] intentionally omitted <==** prepared�by:�DK date�of�publication:�2013-10-03 approved�by:�MB revision:�2.3 9 **==> picture [66 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> IGBT-Module<br>IGBT-modules<br>**----- End of picture text -----**<br> **==> picture [192 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> FP15R12W1T4_B3<br>**----- End of picture text -----**<br> **==> picture [110 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Nutzungsbedingungen<br>**----- End of picture text -----**<br> **==> picture [42 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> application.<br>**----- End of picture text -----**<br> 10
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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