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FP15R12KT3BPSA1
IGBT Module, PIM Three Phase Input Rectifier, 25 A, 1.7 V, 105 W, 125 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPIM 1B Series
- IGBT Technology: IGBT4 - T4
- IGBT Termination: Press Fit
- Power Dissipation: 105W
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- DC Collector Current: 25A
- Power Dissipation Pd: 105W
- Transistor Case Style: Module
- Operating Temperature Max: 125°C
- Junction Temperature Tj Max: 125°C
- Continuous Collector Current: 25A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 49.96 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## テクニカルインフォメーション�/�Technical�Information
> IGBT-モジュールIGBT-modules FP15R12KT3
**==> picture [86 x 38] intentionally omitted <==**
## **IGBT- インバータ�/�IGBT,Inverter 最大定格�/�Maximum�Rated�Values**
## **暫定データ Preliminary�Data**
|テクニカルインフォメーション/TechnicalInformation<br>FP15R12KT3<br>IGBT-モジュール<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.1<br>**暫定データ**<br>**PreliminaryData**<br>**IGBT- インバータ/IGBT,Inverter**<br>**最大定格/MaximumRatedValues**<br>コレクタ・エミッタ間電圧<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>連続DCコレクタ電流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>15<br>25<br>A<br>A<br>繰り返しピークコレクタ電流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>30<br>A<br>トータル損失<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>105<br>W<br>ゲート・エミッタ間ピーク電圧<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**電気的特性/CharacteristicValues**<br>min.<br>typ.<br>max.<br>コレクタ・エミッタ間飽和電圧<br>Collector-emittersaturationvoltage<br>IC= 15 A, VGE= 15 V<br>IC= 15 A, VGE= 15 V<br>VCE sat<br>1,70<br>1,90<br>2,15<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>ゲート・エミッタ間しきい値電圧<br>Gatethresholdvoltage<br>IC= 0,50 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>ゲート電荷量<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,15<br>µC<br>内蔵ゲート抵抗<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>入力容量<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>1,10<br>nF<br>帰還容量<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,04<br>nF<br>コレクタ・エミッタ間遮断電流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>ゲート・エミッタ間漏れ電流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>ターンオン遅れ時間（誘導負荷）<br>Turn-ondelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 75Ω<br>td on<br>0,09<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオン上昇時間（誘導負荷）<br>Risetime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 75Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオフ遅れ時間（誘導負荷）<br>Turn-offdelaytime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 75Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオフ下降時間（誘導負荷）<br>Falltime,inductiveload<br>IC= 15 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 75Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオンスイッチング損失<br>Turn-onenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V<br>RGon= 75Ω<br>Eon<br>1,50<br>2,10<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオフスイッチング損失<br>Turn-offenergylossperpulse<br>IC= 15 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V<br>RGoff= 75Ω<br>Eoff<br>1,10<br>1,30<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>短絡電流<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>60<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>ジャンクション・ケース間熱抵抗<br>Thermalresistance,junctiontocase<br>IGBT部（１素子当り）/perIGBT<br>RthJC<br>1,20<br>K/W<br>動作温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C||
|preparedby:AS|dateofpublication:2013-10-03|
|---|---|
|approvedby:RS|revision:2.1|
1
> IGBT-モジュールIGBT-modules FP15R12KT3
## テクニカルインフォメーション�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **暫定データ Preliminary�Data**
## **Diode、インバータ�/�Diode,�Inverter 最大定格�/�Maximum�Rated�Values**
|ピーク繰返し逆電圧<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|連続DC電流<br>ContinuousDCforwardcurrent||IF|15|||A|
|ピーク繰返し順電流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|30|||A|
|電流二乗時間積<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|60,0|||A²s|
|**電気的特性/CharacteristicValues**|||min.|typ.|max.||
|順電圧<br>Forwardvoltage|IF= 15 A, VGE= 0 V<br>IF= 15 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,65<br>1,65|2,15|V<br>V|
|ピーク逆回復電流<br>Peakreverserecoverycurrent|IF= 15 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||16,0<br>15,0||A<br>A|
|逆回復電荷量<br>Recoveredcharge|IF= 15 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||1,80<br>3,00||µC<br>µC|
|逆回復損失<br>Reverserecoveryenergy|IF= 15 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||0,55<br>1,10||mJ<br>mJ|
|ジャンクション・ケース間熱抵抗<br>Thermalresistance,junctiontocase|/Diode（１素子当り）/perdiode|RthJC|||1,50|K/W|
|動作温度<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C|
## **Diode、整流器�/�Diode,�Rectifier 最大定格�/�Maximum�Rated�Values**
|ピーク繰返し逆電圧<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大実効順電流/chip<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|50|||A|
|整流出力の最大実効電流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|60|||A|
|サージ順電流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|315<br>260|||A<br>A|
|電流二乗時間積<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|495<br>340|||A²s<br>A²s|
|**電気的特性/CharacteristicValues**|||min.|typ.|max.||
|順電圧<br>Forwardvoltage|Tvj= 150°C, IF= 15 A|VF||0,90||V|
|逆電流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||2,00||mA|
|ジャンクション・ケース間熱抵抗<br>Thermalresistance,junctiontocase|/Diode（１素子当り）/perdiode|RthJC|||1,00|K/W|
|動作温度<br>Temperatureunderswitchingconditions||Tvj op||||°C|
|preparedby:AS|dateofpublication:2013-10-03|
|---|---|
|approvedby:RS|revision:2.1|
2
## テクニカルインフォメーション�/�Technical�Information
> IGBT-モジュールIGBT-modules FP15R12KT3
**==> picture [86 x 38] intentionally omitted <==**
## **暫定データ Preliminary�Data**
## **IGBT-ブレーキチョッパー�/�IGBT,�Brake-Chopper 最大定格�/�Maximum�Rated�Values**
|テクニカルインフォメーション/TechnicalInformation<br>FP15R12KT3<br>IGBT-モジュール<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-03<br>revision:2.1<br>**暫定データ**<br>**PreliminaryData**<br>**IGBT-ブレーキチョッパー/IGBT,Brake-Chopper**<br>**最大定格/MaximumRatedValues**<br>コレクタ・エミッタ間電圧<br>Collector-emittervoltage<br>Tvj= 80°C<br>VCES<br>1200<br>V<br>連続DCコレクタ電流<br>ContinuousDCcollectorcurrent<br>TC= 80°C, Tvj max= 150°C<br>TC= 25°C, Tvj max= 150°C<br>IC nom<br>IC<br>10<br>18<br>A<br>A<br>繰り返しピークコレクタ電流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>20<br>A<br>トータル損失<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 150<br>Ptot<br>83,5<br>W<br>ゲート・エミッタ間ピーク電圧<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**電気的特性/CharacteristicValues**<br>min.<br>typ.<br>max.<br>コレクタ・エミッタ間飽和電圧<br>Collector-emittersaturationvoltage<br>IC= 10 A, VGE= 15 V<br>IC= 10 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,45<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>ゲート・エミッタ間しきい値電圧<br>Gatethresholdvoltage<br>IC= 0,30 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,0<br>5,8<br>6,5<br>V<br>ゲート電荷量<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,10<br>µC<br>内蔵ゲート抵抗<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>0,0<br>Ω<br>入力容量<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>0,60<br>nF<br>帰還容量<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,026<br>nF<br>コレクタ・エミッタ間遮断電流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>ゲート・エミッタ間漏れ電流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>ターンオン遅れ時間（誘導負荷）<br>Turn-ondelaytime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 100Ω<br>td on<br>0,09<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオン上昇時間（誘導負荷）<br>Risetime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 100Ω<br>tr<br>0,03<br>0,05<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオフ遅れ時間（誘導負荷）<br>Turn-offdelaytime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 100Ω<br>td off<br>0,42<br>0,52<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオフ下降時間（誘導負荷）<br>Falltime,inductiveload<br>IC= 10 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 100Ω<br>tf<br>0,07<br>0,09<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオンスイッチング損失<br>Turn-onenergylossperpulse<br>IC= 10 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 100Ω<br>Eon<br>1,00<br>1,40<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>ターンオフスイッチング損失<br>Turn-offenergylossperpulse<br>IC= 10 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 100Ω<br>Eoff<br>0,90<br>1,00<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>短絡電流<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>40<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>ジャンクション・ケース間熱抵抗<br>Thermalresistance,junctiontocase<br>IGBT部（１素子当り）/perIGBT<br>RthJC<br>1,50<br>K/W<br>動作温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>125<br>°C||
|preparedby:AS|dateofpublication:2013-10-03|
|---|---|
|approvedby:RS|revision:2.1|
3
## テクニカルインフォメーション�/�Technical�Information
> IGBT-モジュールIGBT-modules FP15R12KT3
**==> picture [86 x 38] intentionally omitted <==**
## **暫定データ Preliminary�Data**
## **Diode、ブレーキチョッパー�/�Diode,�Brake-Chopper 最大定格�/�Maximum�Rated�Values**
|ピーク繰返し逆電圧<br>Repetitivepeakreversevoltage|Tvj= 80°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|連続DC電流<br>ContinuousDCforwardcurrent||IF|10|||A|
|ピーク繰返し順電流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|20|||A|
|電流二乗時間積<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C|I²t|20,0|||A²s|
|**電気的特性/CharacteristicValues**|||min.|typ.|max.||
|順電圧<br>Forwardvoltage|IF= 10 A, VGE= 0 V<br>IF= 10 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C|VF||1,80<br>1,85|2,25|V<br>V|
|ピーク逆回復電流<br>Peakreverserecoverycurrent|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|IRM||14,0<br>15,0||A<br>A|
|逆回復電荷量<br>Recoveredcharge|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|Qr||1,00<br>1,80||µC<br>µC|
|逆回復損失<br>Reverserecoveryenergy|IF= 10 A, - diF/dt = 400 A/µs (Tvj=125°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C|Erec||0,26<br>0,56||mJ<br>mJ|
|ジャンクション・ケース間熱抵抗<br>Thermalresistance,junctiontocase|/Diode（１素子当り）/perdiode|RthJC|||2,30|K/W|
|動作温度<br>Temperatureunderswitchingconditions||Tvj op|-40||125|°C|
## **NTC-サーミスタ�/�NTC-Thermistor 電気的特性�/�Characteristic�Values**
|**NTC-サーミスタ/NTC-Thermistor**<br>|**NTC-サーミスタ/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**電気的特性/CharacteristicValues**|||min.<br>typ.||max.||
|定格抵抗値<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100の偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|損失<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-定数<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-定数<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||t.b.d.||K|
|B-定数<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||t.b.d.||K|
|適切なアプリケーションノートによる仕様<br>Specificationaccordingtothevalidapplicationnote.|||||||
prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�RS revision:�2.1
4
IGBT-モジュール IGBT-modules
## FP15R12KT3
## **暫定データ**
|EY1—)L 1 Module|||||||||
|---|---|---|---|---|---|---|---|---|
|絶縁耐圧|RMS, f = 50 Hz, t = 1 min|VISOL||||2,5||kV|
|ベースプレート材質||||||Cu|||
|内部絶縁<br>Internal isolation|BGR~~(7~~<br>7A1, IEC61140)<br>basic insulation (class 1, IEC 61140)|||||AI203|||
|沿面距離<br>Creepage distance|~~he~~<br>kK -E— KhYY7<br>/ terminal toheatsink<br>#8 SK -348755 /terminal to terminal|||||10,0||mm|
|空間距離<br>Clearance|~~he~~<br>kK -E— KhYY7<br>/ terminal toheatsink<br>4G<br>75 3K - 348 73k /terminal to terminal|||||7,5||mm|
|相対トラッキング指数||CTI||||> 225|||
|||||min.||typ.|max.||
|ケース・ヒートシンク間熱抵抗<br>Thermal resistance, case to heatsink|Paste<br>grease<br>FEY1—)L/ per module<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||||0,02||K/W|
|内部インダクタンス||LsCE||||60||nH|
|パワーターミナル・チップ間抵抗<br>Module lead resistance, terminals - chip|TC<br>~~= 25°C, |A4 9F | per switch~~|RCC'+EE'<br>RAA'+CC'<br>~~Ff~~|||~~| ~~|4,00<br>3,00<br> ~~od~~||mΩ|
|保存温度||Tstg||-40|||125|°C|
|取り付けネジ締め付けトルク|EW~~tt~~ M5||||||||
|Mounting torque for modul mounting|適切なアプリケーションノートによるマウンティング|M||3,00||-|6,00|Nm|
||Screw M5<br>- Mounting according to valid application note||||||||
|質量<br>Weight||G||||180||g|
5
IGBT-モジュール IGBT-modules
## FP15R12KT3
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暫定データ<br>**----- End of picture text -----**<br>
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 125°C<br>30 T a vj = 25°C | 7 30 ss VGE = 19 V | 7 7 7 7<br>27 ( Tvj = 125°C ee 27 | VVGEGE = 17 V = 15 V LAA |<br>VGE = 13 V<br>24 24 VGE = 11 V<br>VGE = 9 V<br>e e<br>21 21<br>|PAA e e<br>18 18<br>Pt ee de<br>/<br>15 15<br>Pt | eve’ | ee[tj / WA<br>12 ee 12 vA<br>9 ee Ane ee 9 eee) Ae<br>6 6<br>ee / ee a /<br>Ege<br>3 3<br>P| Ye2 [|}]<br>PLA<br>0 0<br>| | tt} PA<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>iE IGBT- 4 Y/\—Z (Typical) At YFYVTIIBR IGBT- 4 Y/\—Z (Typical)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =75 Ω ,R Goff =75 Ω ,V CE =600V<br>30 7<br>Tvj = 25°C Eon, Tvj = 125°C<br>27 Tvj = 125°C Eoff, Tvj = 125°C<br>Eo) YS) 6 EC<br>24<br>HTT | | ie _ 7<br>5<br>21<br>Soo ee} f t<br>ee)<br>18<br>eee 4 eeae<br>15<br>3<br>12<br>9<br>2<br>6<br>1<br>3<br>pt tw | EpApf<br>ryt] Lee<br>0 0<br>5 6 7 8 9 10 11 12 0 5 10 15 20 25 30<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-モジュール IGBT-modules
## FP15R12KT3
## **暫定データ**
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Eon =f(R),E G off =f(R G) ZthJC = f(t)<br>VGE =+15V,1 C =15A,V CE =600V<br>3,0 a 10 _—oe<br>Eon, Tvj = 125°C ZthJC : IGBT<br>Eoff, Tvj = 125°C<br>Ey H— P e<br>2,5 | {| || =iy LTCI<br>2,0 Pt} | ber- yy | | 1 PTSETE E ET T<br>0<br>PT TT ATTTT<br>|<br>PTTL Py Ey! PEt ee et EteeEtt<br>1,5<br>1,0 Eft fpr | 0,1 aPtVANEte<br>7 TTI IL<br>(7 TT tT ea eee eee<br>a<br>0,5 PTTL Py Ey! POAi TeEEea ee |ttr yt<br>i: 1 2 3 4<br>ri[K/W]: 0,1363 0,5453 0,3066 0,2118<br>LASm τ i[s]: 0,003345 0,0282 0,1128 o 0,282<br>0,0 0,01 o l<br>40 50 60 70 80 90 100 110 120 130 140 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>PNT PARSE IGBT- 1 >Y/\—% (RBSOA)) IRBEStE Diode, 4 Y/\—2 ( [typical)]<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE rT IBVLR Goff =75 Ω ,T vj =125°C<br>35 30<br>IC, Modul Tvj = 25°C<br>IC, Chip Tvj = 125°C<br>EJ)<br>30<br>| | 25 Eo Fl<br>25<br>20<br>20<br>15<br>15<br>10<br>10<br>ERR pt dg tt<br>5<br>5 PPP) Lv<br>0 0<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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IGBT-モジュール IGBT-modules
## FP15R12KT3
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暫定データ<br>**----- End of picture text -----**<br>
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Erec =f (I F) Erec =f(R G)<br>RGon ano Ω »,V CE =600V IF -ighy CE = 600 V<br>2,0 2,0<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>a SS |<br>1,8 1,8<br>1,6 1,6<br>1,4 1,4<br>1,2 1,2<br>Pre<br>1,0 1,0<br>Poet<br>0,8 0,8<br>0,6 AT 0,6 PEELE ELE EE<br>0,4 0,4<br>0,2 0,2<br>0,0 0,0<br>0 5 10 15 20 25 30 40 50 60 70 80 90 100 110 120 130 140<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
> IFF =f(V F))
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ZthJC =f (t) IFF =f(V F))<br>10 30<br>(ene —<br>ZthJC : Diode Tvj = 25°C<br>or o Tvj = 150°C<br>PT E TT<br>$FI SIPie TTT] 25 ET] | ii} f<br>1 a Stin a 20<br>rT TUT YTTT<br>PT TeTTT<br>2 TT] 15 !<br>PT EEL :<br>LIAL LAE TE TT ‘|<br>0,1 10<br>eeee eee<br>a<br>PTETTee ee el<br>A ec]TT T] 5<br>i: 1 2 3 4<br>ri[K/W]: 0,1514 0,9778 0,2816 0,0892<br>τ i[s]: 0,003333 0,03429 0,1294 0,7662<br>0,01 EEA lso omcotomncoo l l 0 PLL ;P E<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6<br>t [s] VF [V]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br>
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IGBT-モジュール IGBT-modules
## FP15R12KT3
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暫定データ<br>**----- End of picture text -----**<br>
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IC =f(V CE) IF =f(V F)<br>VGE =15V<br>20,0 20<br>Tvj = 25°C Tvj = 25°C<br>18,0 Tvj = 125°C 18 Tvj = 125°C<br>FJ] ew ET<br>16,0 16<br>Se a a ee<br>14,0 14<br>12,0 12<br>ee ee ee<br>10,0 10<br>eee<br>8,0 8<br>6,0 6<br>4,0 4<br>2,0 2<br>AR eee ee<br>0,0 PLA | 0 | e y<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5<br>VCE [V] VF [V]<br>NTC-U¥—S2R Y-SA2ARORBERHE<br>NTC-Thermistor-temperature characteristic (typical)<br>R= f(T)<br>100000<br>| J Rtyp a—————————a<br>(Rar ce<br>a<br>a a<br>10000 nj<br>a|<br>SS a<br>ER Ne ee<br>a Ne ee ee<br>pot NE<br>pp Nf<br>1000<br>a<br>poaa<br>(a NN<br>aa<br>100<br>0 20 40 60 80 100 120 140 160<br>TC [°C]<br> [A] [A]<br>IC IF<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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テクニカルインフォメーション�/�Technical�Information
> IGBT-モジュールIGBT-modules FP15R12KT3
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## **回路図�/�circuit_diagram_headline**
## **暫定データ Preliminary�Data**
**==> picture [410 x 138] intentionally omitted <==**
## **パッケージ概要�/�package�outlines**
**==> picture [29 x 44] intentionally omitted <==**
**----- Start of picture text -----**<br>
Infineon<br>**----- End of picture text -----**<br>
prepared�by:�AS date�of�publication:�2013-10-03 approved�by:�RS revision:�2.1
10
IGBT-モジュール IGBT-modules
## FP15R12KT3
## **暫定データ**
## **この日本訳は、あくまで参考訳となりますので、正式はデータシートに記載されている英文の物となります。**
この日本訳は、あくまで参考訳となりますので、正式はデータシートに記載されている英文の物となります。
利用規約
このデータシートに記載されているデータ類は、技術者向けの物です。このデバイスを使用される際は、製品が 使用されるアプリケーションにて、ご評価頂いた上で、アプリケーションに適切かご判断願います。 このデータシートには、保証されている特性が記述されております。 その他、保証内容は個々の契約期間や条件に応じて決定されます。 保証は、アプリケーションやその特性に対しては行いません。 実際のアプリケーションでの利用に関しては、必ず相当モジュールのアセンブリノートをご確認ください。
追加の技術的情報、アプリケーションでの使用方法について、ご質問がある際には、最寄のセールスオフィスに
ノートを準備させて頂くケースもあります。 技術的な要求によっては、当該製品が危険な物になり得る可能性があります。この様なことが起こる可能性がある場合は、 製品を使用される方の責任にて、弊社セールスオフィスに連絡願います。
航空関連、もしくは医療機器や生命維持装置に使用される場合は、インフィニオンと下記の項目を合意しているか、ご確認願います。 ー リスク 及び 品質の評価
ー 品質契約
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上記の内容の状況に応じて、製品を出荷の判断をさせて頂く場合がございます。 必要に応じて、この規約を関係される方々に送付してください。 インフィニオンにこのデータシートを変更する権利を有します。
11
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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