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FP150R12N3T7BPSA1
IGBT Module, PIM Three Phase Input Rectifier, 150 A, 1.55 V, 175 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: TRENCHSTOP EconoPIM 3
- IGBT Technology: IGBT7 - T7 [Trench Stop]
- IGBT Termination: Solder
- Power Dissipation: -
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- DC Collector Current: 150A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.55V
- Collector Emitter Saturation Voltage Vce(on): 1.55V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 96.21 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FP150R12N3T7 EconoPIM[™] 3 module** _ ## **Preliminary EconoPIM[™] 3 module with TRENCHSTOP[™] IGBT7 and Emitter Controlled 7 diode and NTC** ## **Features** - Electrical features - VCES = 1200 V - IC nom = 150 A / ICRM = 300 A - TRENCHSTOP[TM] IGBT7 - Overload operation up to 175°C - Low VCEsat - Mechanical features - Integrated NTC temperature sensor - Solder contact technology - Copper base plate - Al2O3 substrate with low thermal resistance ## **Potential applications** - Auxiliary inverters - Motor drives - Servo drives ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, Rectifier**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**IGBT, Brake-Chopper**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**Diode, Brake-Chopper**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**7**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11| |**8**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12| |**9**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| |**10**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| |**11**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21| Datasheet 2 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** ## **Insulation Coordination** |||||| |---|---|---|---|---| |**Table 1**<br>**Insulation Coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,<br>_t_= 1 min|2.5|kV| |Material of module<br>baseplate|||Cu|| |Internal Isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|10.0|mm| |Clearance|_d_Clear|terminal to heatsink|7.5|mm| |Comparative tracking index|_CTI_||> 200|| |RTI Elec.|_RTI_|housing|140|°C| **Table 2 Characteristic Values** |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---| ||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE|||25||nH| |Module lead resistance,<br>terminals - chip|_R_AA'+CC'|TC=25°C, per switch||1.1||mΩ| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TC=25°C, per switch||1.6||mΩ| |Storage temperature|_T_stg||-40||125|°C| |Mounting torque for modul<br>mounting|_M_|- Mounting according to<br>valid application note<br>M5,<br>Screw|3||6|Nm| |Weight|_G_|||300||g| ## **2 IGBT, Inverter** |**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**| |---|---|---|---|---| |**Table 3**<br>**Maximum Rated Values**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Collector-emitter voltage|_V_CES|_T_vj= 25 °C|1200|V| |Continous DC collector<br>current|_I_CDC|_T_vj max= 175 °C<br>_T_C= 80 °C|150|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms|300|A| |Gate-emitter peak voltage|_V_GES||±20|V| Datasheet 3 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** |**Table 4**<br>**Characteristic Values**|**Table 4**<br>**Characteristic Values**|**Table 4**<br>**Characteristic Values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 150 A,<br>_V_GE= 15 V<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.55|TBD|V| |||||1.69||| |||||1.77||| |Gate threshold voltage|_V_GEth|_I_C= 3.5 mA,<br>VCE= VGE,<br>_T_vj= 25 °C|5.15|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,<br>_V_CE= 600 V||2.5||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C||1||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,<br>_T_vj= 25 °C,<br>_V_CE= 25 V,<br>_V_GE= 0 V||30.1||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,<br>_T_vj= 25 °C,<br>_V_CE= 25 V,<br>_V_GE= 0 V||0.105||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,<br>_V_GE= 0 V<br>_T_vj= 25 °C|||0.012|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,<br>_V_GE= 20 V,<br>_T_vj= 25 °C|||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 150 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gon= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.172||µs| |||||0.183||| |||||0.189||| |Rise time (inductive load)|_t_r|_I_C= 150 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gon= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.072||µs| |||||0.077||| |||||0.080||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 150 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.331||µs| |||||0.414||| |||||0.433||| Datasheet 0.10 2021-02-09 4 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**Characteristic Values (continued)**|**Table 4**<br>**Characteristic Values (continued)**|**Table 4**<br>**Characteristic Values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Fall time (inductive load)|_t_f|_I_C= 150 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.103||µs| |||||0.198||| |||||0.262||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 150 A,<br>_V_CE= 600 V,<br>_L_σ= 35 nH,<br>_V_GE= ±15 V,<br>_R_Gon= 3.3 Ω,<br>di/dt = 1700 A/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||16.6||mJ| |||||24.9||| |||||29.6||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 150 A,<br>_V_CE= 600 V,<br>_L_σ= 35 nH,<br>_V_GE= ±15 V,<br>_R_Gof= 3.3 Ω,<br>dv/dt = 3200 V/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||10.4||mJ| |||||15.9||| |||||19.9||| |SC data|_I_SC|_V_GE≤ 15 V,<br>_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt<br>_t_P≤ 8 µs,<br>_T_vj= 150 °C<br>_t_P≤ 7 µs,<br>_T_vj= 175 °C||520||A| |||||490||| |Thermal resistance, junction<br>to case|_R_thJC|per IGBT|||0.290|K/W| |Thermal resistance, case to<br>heatsink|_R_thCH|per IGBT,<br>λgrease= 1 W/(m*K)||0.0680||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **3 Diode, Inverter** **Table 5 Maximum Rated Values** |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj= 25 °C|1200|V| Datasheet 0.10 5 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 5**<br>**Maximum Rated Values (continued)**|**Table 5**<br>**Maximum Rated Values (continued)**|**Table 5**<br>**Maximum Rated Values (continued)**||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Continous DC forward<br>current|_I_F||150|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms|300|A| |I2t - value|_I_2_t_|_t_P= 10 ms,<br>_V_R= 0 V<br>_T_vj= 125 °C<br>_T_vj= 175 °C|2700|A²s| ||||2250|| |**Table 6**<br>**Characteristic Values**|**Table 6**<br>**Characteristic Values**|**Table 6**<br>**Characteristic Values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 150 A,<br>_V_GE= 0 V<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.72|TBD|V| |||||1.59||| |||||1.52||| |Peak reverse recovery<br>current|_I_RM|_V_R= 600 V,<br>_I_F= 150 A,<br>_V_GE= -15 V,<br>-diF/dt = 1700 A/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||65.3||A| |||||91.8||| |||||107||| |Recovered charge|_Q_r|_V_R= 600 V,<br>_I_F= 150 A,<br>_V_GE= -15 V,<br>-diF/dt = 1700 A/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||10.3||µC| |||||21.7||| |||||28.6||| |Reverse recovery energy|_E_rec|_V_R= 600 V,<br>_I_F= 150 A,<br>_V_GE= -15 V,<br>-diF/dt = 1700 A/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||3.27||mJ| |||||7.32||| |||||9.88||| |Thermal resistance, junction<br>to case|_R_thJC|per diode|||0.463|K/W| |Thermal resistance, case to<br>heatsink|_R_thCH|per diode,<br>λgrease= 1 W/(m*K)||0.0698||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ Datasheet 6 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, Rectifier** ## **4 Diode, Rectifier** |**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**|**4**<br>**Diode, Rectifier**||| |---|---|---|---|---| |**Table 7**<br>**Maximum Rated Values**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj= 25 °C|1600|V| |Maximum RMS forward<br>current per chip|_I_FRMSM|_T_C= 100 °C|150|A| |Maximum RMS current at<br>rectifier output|_I_RMSM|_T_C= 100 °C|150|A| |Surge forward current|_I_FSM|_t_P= 10 ms<br>_T_vj= 25 °C<br>_T_vj= 150 °C|1600|A| ||||1400|| |I2t - value|_I_2_t_|_t_P= 10 ms<br>_T_vj= 25 °C<br>_T_vj= 150 °C|12800|A²s| ||||9800|| |**Table 8**<br>**Characteristic Values**|**Table 8**<br>**Characteristic Values**|**Table 8**<br>**Characteristic Values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 150 A<br>_T_vj= 150 °C||0.97||V| |Reverse current|_I_r|_T_vj= 150 °C,<br>_V_R= 1600 V||1||mA| |Thermal resistance, junction<br>to case|_R_thJC|per diode|||0.333|K/W| |Thermal resistance, case to<br>heatsink|_R_thCH|per diode,<br>λgrease= 1 W/(m*K)||0.0670||K/W| |Temperature under<br>switching conditions|_T_vj, op||-40||150|°C| ## **5 IGBT, Brake-Chopper** |**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**| |---|---|---|---|---| |**Table 9**<br>**Maximum Rated Values**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Collector-emitter voltage|_V_CES|_T_vj= 25 °C|1200|V| |Continous DC collector<br>current|_I_CDC|_T_vj max= 175 °C<br>_T_C= 90 °C|100|A| |Repetitive peak collector<br>current|_I_CRM|_t_P= 1 ms|200|A| |Gate-emitter peak voltage|_V_GES||±20|V| Datasheet 0.10 7 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 IGBT, Brake-Chopper** |**Table 10**<br>**Characteristic Values**|**Table 10**<br>**Characteristic Values**|**Table 10**<br>**Characteristic Values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 100 A,<br>_V_GE= 15 V<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.50|TBD|V| |||||1.64||| |||||1.72||| |Gate threshold voltage|_V_GEth|_I_C= 2.5 mA,<br>VCE= VGE,<br>_T_vj= 25 °C|5.15|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,<br>_V_CE= 600 V||1.8||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C||1.5||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,<br>_T_vj= 25 °C,<br>_V_CE= 25 V,<br>_V_GE= 0 V||21.7||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,<br>_T_vj= 25 °C,<br>_V_CE= 25 V,<br>_V_GE= 0 V||0.076||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1200 V,<br>_V_GE= 0 V<br>_T_vj= 25 °C|||0.01|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,<br>_V_GE= 20 V,<br>_T_vj= 25 °C|||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 100 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gon= 4.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.169||µs| |||||0.180||| |||||0.187||| |Rise time (inductive load)|_t_r|_I_C= 100 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gon= 4.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.063||µs| |||||0.067||| |||||0.070||| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 100 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 4.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.310||µs| |||||0.390||| |||||0.410||| Datasheet 8 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, Brake-Chopper** |**Table 10**<br>**Characteristic Values (continued)**|**Table 10**<br>**Characteristic Values (continued)**|**Table 10**<br>**Characteristic Values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Fall time (inductive load)|_t_f|_I_C= 100 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 4.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.110||µs| |||||0.190||| |||||0.250||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 100 A,<br>_V_CE= 600 V,<br>_L_σ= 35 nH,<br>_V_GE= ±15 V,<br>_R_Gon= 4.3 Ω,<br>di/dt = 1100 A/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||7.12||mJ| |||||11.7||| |||||14.5||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 100 A,<br>_V_CE= 600 V,<br>_L_σ= 35 nH,<br>_V_GE= ±15 V,<br>_R_Gof= 4.3 Ω,<br>dv/dt = 2800 V/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||6.93||mJ| |||||10.6||| |||||13.3||| |SC data|_I_SC|_V_GE≤ 15 V,<br>_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt<br>_t_P≤ 8 µs,<br>_T_vj= 150 °C<br>_t_P≤ 7 µs,<br>_T_vj= 175 °C||370||A| |||||350||| |Thermal resistance, junction<br>to case|_R_thJC|per IGBT|||0.373|K/W| |Thermal resistance, case to<br>heatsink|_R_thCH|per IGBT,<br>λgrease= 1 W/(m*K)||0.0680||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **6 Diode, Brake-Chopper** **Table 11 Maximum Rated Values** |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj= 25 °C|1200|V| Datasheet 9 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, Brake-Chopper** ## **Maximum Rated Values (continued)** |||||| |---|---|---|---|---| |**Table 11**<br>**Maximum Rated Values (continued)**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Continous DC forward<br>current|_I_F||50|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms|100|A| |I2t - value|_I_2_t_|_t_P= 10 ms,<br>_V_R= 0 V<br>_T_vj= 125 °C<br>_T_vj= 175 °C|220|A²s| ||||200|| |**Table 12**<br>**Characteristic Values**|**Table 12**<br>**Characteristic Values**|**Table 12**<br>**Characteristic Values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 50 A,<br>_V_GE= 0 V<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.72|TBD|V| |||||1.59||| |||||1.52||| |Peak reverse recovery<br>current|_I_RM|_V_R= 600 V,<br>_I_F= 50 A,<br>_V_GE= -15 V,<br>-diF/dt = 550 A/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||37.3||A| |||||44.3||| |||||49.6||| |Recovered charge|_Q_r|_V_R= 600 V,<br>_I_F= 50 A,<br>_V_GE= -15 V,<br>-diF/dt = 550 A/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||3.86||µC| |||||7.05||| |||||10.1||| |Reverse recovery energy|_E_rec|_V_R= 600 V,<br>_I_F= 50 A,<br>_V_GE= -15 V,<br>-diF/dt = 550 A/µs<br>(Tvj= 175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.13||mJ| |||||2.34||| |||||3.23||| |Thermal resistance, junction<br>to case|_R_thJC|per diode|||0.909|K/W| |Thermal resistance, case to<br>heatsink|_R_thCH|per diode,<br>λgrease= 1 W/(m*K)||0.109||K/W| |Temperature under<br>switching conditions|_T_vj op||-40||175|°C| _Note:_ _T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ Datasheet 10 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **7 NTC-Thermistor** ## **7 NTC-Thermistor** |**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 13**<br>**Characteristic Values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,<br>_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet 0.10 2021-02-09 11 **FP150R12N3T7 EconoPIM[™] 3 module** **8 Characteristics diagrams** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **output characteristic (typical), IGBT, Inverter** **output characteristic (typical), IGBT, Inverter** IC = f(VCE) T = 175 °C vj IC = f(VCE) ## VGE = 15 V **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>transfer characteristic (typical), IGBT, Inverter switching losses (typical), IGBT, Inverter<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE = ± 15 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 300 120<br>110<br>250 100<br>90<br>200 80<br>70<br>150 60<br>50<br>100 40<br>30<br>50 20<br>10<br>0 0<br>5 6 7 8 9 10 11 12 13 0 50 100 150 200 250 300<br>**----- End of picture text -----**<br> Datasheet 12 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **switching losses (typical), IGBT, Inverter** E = f(RG) IC = 150 A, VCE = 600 V, VGE = ± 15 V **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 160<br>150<br>140<br>130<br>120<br>110<br>100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 5 10 15 20 25 30 35<br>**----- End of picture text -----**<br> **switching times (typical), IGBT, Inverter** t = f(RG) IC = 150 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 5 10 15 20 25 30 35<br>**----- End of picture text -----**<br> **switching times (typical), IGBT, Inverter** t = f(IC) RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 50 100 150 200 250 300<br>**----- End of picture text -----**<br> **transient thermal impedance , IGBT, Inverter** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet 13 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **reverse bias safe operating area (RBSOA), IGBT, Inverter** IC = f(VCE) ## **capacity characteristic (typical), IGBT, Inverter** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C RGoff = 3.3 Ω, VGE = 15 V, Tvj = 175 °C **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> ## **Voltage slope (typical), IGBT, Inverter** dv/dt = f(RG) IC = 150 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35<br>**----- End of picture text -----**<br> **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **gate charge characteristic (typical), IGBT, Inverter** VGE = f(QG) IC = 150 A, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>10<br>5<br>0<br>-5<br>-10<br>-15<br>0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> Datasheet 0.10 2021-02-09 14 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **forward characteristic (typical), Diode, Inverter** IF = f(VF) ## **switching losses (typical), Diode, Inverter** Erec = f(IF) RGon = 3.3 Ω, VCE = 600 V **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> **switching losses (typical), Diode, Inverter** Erec = f(RG) VCE = 600 V, IF = 150 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 5 10 15 20 25 30 35<br>**----- End of picture text -----**<br> **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 14<br>12<br>10<br>8<br>6<br>4<br>2<br>0<br>0 50 100 150 200 250 300<br>**----- End of picture text -----**<br> **transient thermal impedance , Diode, Inverter** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet 0.10 2021-02-09 15 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **forward characteristic (typical), Diode, Rectifier transient thermal impedance , Diode, Rectifier** IF = f(VF) Zth = f(t) **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4<br>**----- End of picture text -----**<br> **output characteristic (typical), IGBT, Brake-Chopper** IC = f(VCE) VGE = 15 V **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **forward characteristic (typical), Diode, BrakeChopper** IF = f(VF) **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 200 100<br>90<br>175<br>80<br>150<br>70<br>125<br>60<br>100 50<br>40<br>75<br>30<br>50<br>20<br>25<br>10<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5<br>**----- End of picture text -----**<br> Datasheet 16 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **==> picture [539 x 292] intentionally omitted <==** **----- Start of picture text -----**<br> temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet 0.10 2021-02-09 17 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Circuit diagram** **==> picture [167 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 9 Circuit diagram<br>**----- End of picture text -----**<br> **==> picture [455 x 123] intentionally omitted <==** **==> picture [8 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> �<br>**----- End of picture text -----**<br> **Figure 2** Datasheet 18 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **10 Package outlines** **==> picture [177 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 10 Package outlines<br>**----- End of picture text -----**<br> **==> picture [509 x 442] intentionally omitted <==** **Figure 3** Datasheet 19 0.10 2021-02-09 **FP150R12N3T7 EconoPIM[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **11 Module label code** ## **11 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 4** Datasheet 20 0.10 2021-02-09 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2021-02-09 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2021 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
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