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FP100R12W3T7B11BPSA1
IGBT Module, Seven Pack, 100 A, 1.5 V, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EasyPIM TRENCHSTOP
- IGBT Technology: IGBT7 [Trench Stop]
- IGBT Termination: Press Fit
- Power Dissipation: -
- IGBT Configuration: Seven Pack
- Transistor Mounting: Panel
- DC Collector Current: 100A
- Power Dissipation Pd: -
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.5V
- Collector Emitter Saturation Voltage Vce(on): 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 84.93 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FP100R12W3T7_B11** **EasyPIM[™] module** ## **Preliminary** ## **EasyPIM[™] module with TRENCHSTOP[™] IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC** ## **Features** - Electrical features - VCES = 1200 V - IC nom = 100 A / ICRM = 200 A - TRENCHSTOP[TM] IGBT7 - Low VCEsat - Overload operation up to 175°C - Mechanical features - High power density - Compact design - Al2O3 substrate with low thermal resistance - 2.5 kV AC 1 min insulation - PressFIT contact technology ## **Potential applications** - Air conditioning - Auxiliary inverters - Motor drives - Servo drives - UPS systems ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** J ~~;~~ Please read the Important Notice and Warnings at the end of this document Datasheet **www.infineon.com** 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**Diode, Rectifier**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6| |**5**|**IGBT, Brake-Chopper**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**6**|**Diode, Brake-Chopper**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9| |**7**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10| |**8**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**9**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17| |**10**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| Datasheet 2 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**| |---|---|---|---|---| |**Table 1**<br>**Insulation Coordination**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,<br>_t_= 1 min|2.5|kV| |Internal Isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|11.2|mm| |Creepage distance|_d_Creep|terminal to terminal|6.8|mm| |Clearance|_d_Clear|terminal to heatsink|9.4|mm| |Clearance|_d_Clear|terminal to terminal|5.5|mm| |Comperative tracking index|_CTI_||> 400|| |RTI Elec.|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic Values**|**Table 2**<br>**Characteristic Values**|**Table 2**<br>**Characteristic Values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Stray inductance module|_L_sCE|||35||nH| |Module lead resistance, terminals<br>- chip|_R_AA'+CC'|TH=25°C, per switch||2.8||mΩ| |Module lead resistance, terminals<br>- chip|_R_CC'+EE'|TH=25°C, per switch||2.2||mΩ| |Storage temperature|_T_stg||-40||125|°C| |Mounting torque for modul<br>mounting|_M_|- Mounting according to<br>valid application note<br>M5,<br>Screw|1.3||1.5|Nm| |Weight|_G_|||78||g| _Note: The current under continuous operation is limited to 25 A rms per connector pin._ ## **2 IGBT, Inverter** |**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**|**2**<br>**IGBT, Inverter**| |---|---|---|---|---| |**Table 3**<br>**Maximum Rated Values**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Collector-emitter voltage|_V_CES|_T_vj= 25 °C|1200|V| |Continous DC collector current|_I_CDC|_T_vj max= 175 °C<br>_T_H= 65 °C|100|A| |Repetitive peak collector current|_I_CRM|_t_P= 1 ms|200|A| |Gate-emitter peak voltage|_V_GES||±20|V| Datasheet 3 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** |**Table 4**<br>**Characteristic Values**|**Table 4**<br>**Characteristic Values**|**Table 4**<br>**Characteristic Values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 100 A,<br>_V_GE= 15 V<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.50|TBD|V| |||||1.64||| |||||1.72||| |Gate threshold voltage|_V_GEth|_I_C= 2.5 mA,<br>VCE= VGE,<br>_T_vj= 25 °C|5.15|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,<br>_V_CE= 600 V||1.8||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C||1.5||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,<br>_T_vj= 25 °C,<br>_V_CE= 25 V,<br>_V_GE= 0 V||21.7||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,<br>_T_vj= 25 °C,<br>_V_CE= 25 V,<br>_V_GE= 0 V||0.076||nF| |Collector-emitter cut-of current|_I_CES|_V_CE= 1200 V,<br>_V_GE= 0 V<br>_T_vj= 125 °C|||0.009|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,<br>_V_GE= 20 V,<br>_T_vj= 25 °C|||100|nA| |Turn on delay time (inductive<br>load)|_t_don|_I_C= 100 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gon= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.163||µs| |||||0.184||| |||||0.193||| |Rise time (inductive load)|_t_r|_I_C= 100 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gon= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.054||µs| |||||0.056||| |||||0.057||| |Turn of delay time (inductive<br>load)|_t_dof|_I_C= 100 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.328||µs| |||||0.410||| |||||0.459||| Datasheet 0.20 2020-11-13 4 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** ## **Characteristic Values (continued)** |||||||| |---|---|---|---|---|---|---| |**Table 4**<br>**Characteristic Values (continued)**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Fall time (inductive load)|_t_f|_I_C= 100 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.114||µs| |||||0.197||| |||||0.258||| |Turn-on energy loss per pulse|_E_on|_I_C= 100 A,<br>_V_CE= 600 V,<br>_L_σ= 35 nH,<br>di/dt = 1900 A/µs (Tvj=<br>175 °C),<br>_V_GE= ±15 V,<br>_R_Gon= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||9.5||mJ| |||||12.6||| |||||14.3||| |Turn-of energy loss per pulse|_E_of|_I_C= 100 A,<br>_V_CE= 600 V,<br>_L_σ= 35 nH,<br>du/dt = 3000 V/µs (Tvj=<br>175 °C),<br>_V_GE= ±15 V,<br>_R_Gof= 3.3 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||6.85||mJ| |||||10.3||| |||||12.6||| |SC data|_I_SC|_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt<br>_t_P≤ 8 µs,<br>_T_vj= 150 °C<br>_t_P≤ 7 µs,<br>_T_vj= 175 °C||370||A| |||||350||| |Thermal resistance, junction to<br>heatsink|_R_thJH|per IGBT,<br>λgrease= 3.3 W/(m*K)||0.510||K/W| |Temperature under switching<br>conditions|_T_vj op||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **3 Diode, Inverter** |**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**|**3**<br>**Diode, Inverter**| |---|---|---|---|---| |**Table 5**<br>**Maximum Rated Values**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Repetitive peak reverse voltage|_V_RRM|_T_vj= 25 °C|1200|V| |Continous DC forward current|_I_F||100|A| |Repetitive peak forward current|_I_FRM|_t_P= 1 ms|200|A| Datasheet 0.20 5 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **4 Diode, Rectifier** |**Table 5**<br>**Maximum Rated Values (continued)**|**Table 5**<br>**Maximum Rated Values (continued)**|**Table 5**<br>**Maximum Rated Values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| |I2t - value|_I_2_t_|_V_R= 0 V,<br>_t_P= 10 ms<br>_T_vj= 125 °C<br>_T_vj= 175 °C||970||A²s| |||||860||| |||||||| |**Table 6**<br>**Characteristic Values**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 100 A,<br>_V_GE= 0 V<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.72|TBD|V| |||||1.59||| |||||1.52||| |Peak reverse recovery current|_I_RM|_V_R= 600 V,<br>_V_GE= -15 V,<br>-diF/dt = 1900 A/µs (Tvj=<br>175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||68.3||A| |||||84.6||| |||||92.8||| |Recovered charge|_Q_r|_V_R= 600 V,<br>_V_GE= -15 V,<br>-diF/dt = 1900 A/µs (Tvj=<br>175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||9.38||µC| |||||14.9||| |||||19.1||| |Reverse recovery energy|_E_rec|_V_R= 600 V,<br>_V_GE= -15 V,<br>-diF/dt = 1900 A/µs (Tvj=<br>175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||3.02||mJ| |||||5.18||| |||||6.5||| |Thermal resistance, junction to<br>heatsink|_R_thJH|per diode,<br>λgrease= 3.3 W/(m*K)||0.870||K/W| |Temperature under switching<br>conditions|_T_vj op||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **4 Diode, Rectifier** **Table 7 Maximum Rated Values** |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---| |Repetitive peak reverse voltage|_V_RRM|_T_vj= 25 °C|1600|V| |Maximum RMS forward current<br>per chip|_I_FRMSM|_T_H= 100 °C|100|A| |Maximum RMS current at rectifier<br>output|_I_RMSM|_T_H= 100 °C|100|A| Datasheet 6 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 IGBT, Brake-Chopper** |**Table 7**<br>**Maximum Rated Values (continued)**|**Table 7**<br>**Maximum Rated Values (continued)**|**Table 7**<br>**Maximum Rated Values (continued)**||| |---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Surge forward current|_I_FSM|_t_P= 10 ms<br>_T_vj= 25 °C<br>_T_vj= 150 °C|1150|A| ||||880|| |I2t - value|_I_2_t_|_t_P= 10 ms<br>_T_vj= 25 °C<br>_T_vj= 150 °C|6610|A²s| ||||3870|| |**Table 8**<br>**Characteristic Values**|**Table 8**<br>**Characteristic Values**|**Table 8**<br>**Characteristic Values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_T_vj= 150 °C,<br>_I_F= 100 A||1.02||V| |Reverse current|_I_r|_T_vj= 150 °C,<br>_V_R= 1600 V||1||mA| |Thermal resistance, junction to<br>heatsink|_R_thJH|per diode,<br>λgrease= 3.3 W /(m*K)||0.700||K/W| |Temperature under switching<br>conditions|_T_vj, op||-40||150|°C| ## **5 IGBT, Brake-Chopper** |**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**|**5**<br>**IGBT, Brake-Chopper**| |---|---|---|---|---| |**Table 9**<br>**Maximum Rated Values**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Collector-emitter voltage|_V_CES|_T_vj= 25 °C|1200|V| |Continous DC collector current|_I_CDC|_T_vj max= 175 °C<br>_T_H= 80 °C|50|A| |Repetitive peak collector current|_I_CRM|_t_P= 1 ms|100|A| |Gate-emitter peak voltage|_V_GES||±20|V| **Table 10 Characteristic Values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---| ||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter saturation<br>voltage|_V_CE sat|_I_C= 50 A,<br>_V_GE= 15 V<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.50|TBD|V| |||||1.64||| |||||1.72||| |Gate threshold voltage|_V_GEth|_I_C= 1.28 mA,<br>VCE= VGE,<br>_T_vj= 25 °C|5.15|5.80|6.45|V| Datasheet 0.20 7 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **5 IGBT, Brake-Chopper** |**Table 10**<br>**Characteristic Values (continued)**|**Table 10**<br>**Characteristic Values (continued)**|**Table 10**<br>**Characteristic Values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Gate charge|_Q_G|_V_GE= ±15 V,<br>_V_CE= 600 V||0.92||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C||0||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,<br>_T_vj= 25 °C,<br>_V_CE= 25 V,<br>_V_GE= 0 V||11.1||nF| |Reverse transfer capacitance|_C_res|_f_= 100 kHz,<br>_T_vj= 25 °C,<br>_V_CE= 25 V,<br>_V_GE= 0 V||0.039||nF| |Collector-emitter cut-of current|_I_CES|_V_CE= 1200 V<br>_T_vj= 25 °C|||1|mA| |Gate-emitter leakage current|_I_GES|_V_CE= 0 V,<br>_V_GE= 20 V,<br>_T_vj= 25 °C|||100|nA| |Turn on delay time (inductive<br>load)|_t_don|_I_C= 50 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gon= 5.1 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.045||µs| |||||0.047||| |||||0.048||| |Rise time (inductive load)|_t_r|_I_C= 50 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gon= 5.1 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.031||µs| |||||0.034||| |||||0.035||| |Turn of delay time (inductive<br>load)|_t_dof|_I_C= 50 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 5.1 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.255||µs| |||||0.340||| |||||0.382||| |Fall time (inductive load)|_t_f|_I_C= 50 A,<br>_V_CE= 600 V,<br>_V_GE= ±15 V,<br>_R_Gof= 5.1 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.107||µs| |||||0.195||| |||||0.255||| Datasheet 8 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Diode, Brake-Chopper** |**Table 10**<br>**Characteristic Values (continued)**|**Table 10**<br>**Characteristic Values (continued)**|**Table 10**<br>**Characteristic Values (continued)**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Turn-on energy loss per pulse|_E_on|_I_C= 50 A,<br>_V_CE= 600 V,<br>_L_σ= 35 nH,<br>di/dt = 1200 A/µs (Tvj=<br>175 °C),<br>_V_GE= ±15 V,<br>_R_Gon= 5.1 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||3.21||mJ| |||||4.03||| |||||4.46||| |Turn-of energy loss per pulse|_E_of|_I_C= 50 A,<br>_V_CE= 600 V,<br>_L_σ= 35 nH,<br>du/dt = 2900 V/µs (Tvj=<br>175 °C),<br>_V_GE= ±15 V,<br>_R_Gof= 5.1 Ω<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||3.23||mJ| |||||5.22||| |||||6.45||| |SC data|_I_SC|_V_CC= 800 V,<br>VCEmax=VCES-LsCE*di/dt<br>_t_P≤ 8 µs,<br>_T_vj= 150 °C<br>_t_P≤ 7 µs,<br>_T_vj= 175 °C||190||A| |||||180||| |Thermal resistance, junction to<br>heatsink|_R_thJH|per IGBT,<br>λgrease= 3.3 W /(m*K)||0.850||K/W| |Temperature under switching<br>conditions|_T_vj op||-40||175|°C| _Note:_ _T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **6 Diode, Brake-Chopper** |**6**<br>**Diode, Brake-Chopper**|**6**<br>**Diode, Brake-Chopper**|**6**<br>**Diode, Brake-Chopper**||| |---|---|---|---|---| |**Table 11**<br>**Maximum Rated Values**||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Repetitive peak reverse voltage|_V_RRM|_T_vj= 25 °C|1200|V| |Continous DC forward current|_I_F||25|A| |Repetitive peak forward current|_I_FRM|_t_P= 1 ms|50|A| |I2t - value|_I_2_t_|_V_R= 0 V,<br>_t_P= 10 ms<br>_T_vj= 125 °C<br>_T_vj= 175 °C|72.5|A²s| ||||63|| Datasheet 9 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **7 NTC-Thermistor** |**Table 12**<br>**Characteristic Values**|**Table 12**<br>**Characteristic Values**|**Table 12**<br>**Characteristic Values**||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 25 A,<br>_V_GE= 0 V<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.83||V| |||||1.70||| |||||1.63||| |Peak reverse recovery current|_I_RM|_V_R= 600 V,<br>_V_GE= -15 V,<br>-diF/dt = 1100 A/µs (Tvj=<br>175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||27.4||A| |||||31.2||| |||||34.1||| |Recovered charge|_Q_r|_V_R= 600 V,<br>_V_GE= -15 V,<br>-diF/dt = 1100 A/µs (Tvj=<br>175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||1.93||µC| |||||3.51||| |||||4.51||| |Reverse recovery energy|_E_rec|_V_R= 600 V,<br>_V_GE= -15 V,<br>-diF/dt = 1100 A/µs (Tvj=<br>175 °C)<br>_T_vj= 25 °C<br>_T_vj= 125 °C<br>_T_vj= 175 °C||0.74||mJ| |||||1.42||| |||||1.85||| |Thermal resistance, junction to<br>heatsink|_R_thJH|per diode,<br>λgrease= 3.3 W /(m*K)||1.86||K/W| |Temperature under switching<br>conditions|_T_vj op||-40||175|°C| _Note: T_ vj op _> 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14._ ## **7 NTC-Thermistor** |**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**|**7**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 13**<br>**Characteristic Values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|_ΔR/R_|_T_NTC= 100 °C,<br>_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _Note: Specification according to the valid application note._ Datasheet 10 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **8 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V **output characteristic (typical), IGBT, Inverter** IC = f(VCE) T = 175 °C vj **==> picture [539 x 311] intentionally omitted <==** **----- Start of picture text -----**<br> 200 200<br>175 175<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>25 25<br>0 0<br>0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5<br>transfer characteristic (typical), IGBT, Inverter switching losses (typical), IGBT, Inverter<br>IC = f(VGE) E = f(IC)<br>VCE = 20 V RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE = ± 15 V<br>**----- End of picture text -----**<br> **==> picture [539 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 200 40<br>175 35<br>150 30<br>125 25<br>100 20<br>75 15<br>50 10<br>25 5<br>0 0<br>5 6 7 8 9 10 11 12 13 0 25 50 75 100 125 150 175 200<br>**----- End of picture text -----**<br> Datasheet 0.20 11 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **switching losses (typical), IGBT, Inverter** E = f(RG) IC = 100 A, VCE = 600 V, VGE = ± 15 V **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 65<br>60<br>55<br>50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35<br>**----- End of picture text -----**<br> ## **switching times (typical), IGBT, Inverter** t = f(RG) IC = 100 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 5 10 15 20 25 30 35<br>**----- End of picture text -----**<br> ## **switching times (typical), IGBT, Inverter** t = f(IC) RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 25 50 75 100 125 150 175 200<br>**----- End of picture text -----**<br> ## **dv/dt (typical), IGBT, Inverter** dV/dt = f(RGon) IC = 100 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35<br>**----- End of picture text -----**<br> Datasheet 12 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **transient thermal impedance , IGBT, Inverter** Zth = f(t) ## **reverse bias safe operating area (RBSOA), IGBT, Inverter** IC = f(VCE) RGoff = 3.3 Ω, VGE = ±15.0 V, Tvj = 175 °C **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> **capacity characteristic (typical), IGBT, Inverter** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 250<br>200<br>150<br>100<br>50<br>0<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> **gate charge characteristic (typical), IGBT, Inverter** VGE = f(QG) IC = 100 A, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>10<br>5<br>0<br>-5<br>-10<br>-15<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8<br>**----- End of picture text -----**<br> Datasheet 13 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **forward characteristic (typical), Diode, Inverter** IF = f(VF) **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 0.5 1 1.5 2 2.5<br>**----- End of picture text -----**<br> **switching losses (typical), Diode, Inverter** Erec = f(RG) VCE = 600 V, IF = 100 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 5 10 15 20 25 30 35<br>**----- End of picture text -----**<br> ## **switching losses (typical), Diode, Inverter** Erec = f(IF) VCE = 600 V, RGon = RGon(IGBT) **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 25 50 75 100 125 150 175 200<br>**----- End of picture text -----**<br> **transient thermal impedance , Diode, Inverter** Zth = f(t) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet 0.20 2020-11-13 14 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** **forward characteristic (typical), Diode, Rectifier** IF = f(VF) **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>175<br>150<br>125<br>100<br>75<br>50<br>25<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2 1.4<br>**----- End of picture text -----**<br> ## **output characteristic (typical), IGBT, Brake-Chopper** IC = f(VCE) VGE = 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>90<br>80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 0.5 1 1.5 2 2.5 3<br>**----- End of picture text -----**<br> **transient thermal impedance , Diode, Rectifier** Zth = f(t) **==> picture [229 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> ## **forward characteristic (typical), Diode, BrakeChopper** IF = f(VF) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 50<br>45<br>40<br>35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 0.5 1 1.5 2 2.5<br>**----- End of picture text -----**<br> Datasheet 0.20 2020-11-13 15 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Characteristics diagrams** ## **temperature characteristic (typical), NTC-Thermistor** R = f(TNTC) **==> picture [228 x 253] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet 16 0.20 2020-11-13 **FP100R12W3T7_B11 EasyPIM[™] module** **==> picture [105 x 47] intentionally omitted <==** ## **9 Circuit diagram** **==> picture [167 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 9 Circuit diagram<br>**----- End of picture text -----**<br> **==> picture [187 x 174] intentionally omitted <==** **==> picture [219 x 188] intentionally omitted <==** **==> picture [8 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> J<br>**----- End of picture text -----**<br> ## **Figure 2** ## **10 Package outlines** **==> picture [527 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> B dimensioned forchoose length according to pcb thickness 4x EJOT Delta PT WN5451 25 � � 0,25 A B C ( � 2,3) Dome 4x � 3,5 pcb hole pattern<br>4x<br>26 P N N1 P1 P2 N2 N3<br>14 20,817,624 G2E2 E6 NB<br>14,4 G6<br>8 EB<br>4,8 E4 G4 GB<br>0 1,6<br>0<br>1,6 L1<br>4,8<br>14 8 NTC<br>11,2<br>G3<br>17,6 G1 E3 G5<br>26 20,824 E1 E5 B<br>L2 L3 U V W<br>C<br>109,9 � 0,45<br>A<br>recommended design hight<br>� 4,2<br>( � 3,4)<br>BC<br>A<br>0,25<br>�<br>� 2x<br>0,1<br>�<br>� � 12<br>5,4<br>2x 2x according to screw head washer<br>0,45<br> �<br>62<br>49,68 47,43 44,43 0 44,43 47,43 49,68<br>36,08 32,88 26,48 23,28 20,08 16,88 13,68 10,48 7,28 4,08 0 4,08 7,28 16,88 20,08 23,28 26,48 29,68 32,88 36,08<br>0,1<br>12,2 � (12) (16,4)<br>**----- End of picture text -----**<br> **Figure 3** Datasheet 0.20 2020-11-13 17 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2020-11-13 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”) . **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2020 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-** Infineon Technologies in customer’s applications. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at April 28, 2026
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