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FP100R12KT4BOSA1
IGBT Module, PIM Three Phase Input Rectifier, 100 A, 1.75 V, 515 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(br)ceo:1.2kV; Transist
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPIM 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 515W
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 100A
- Power Dissipation Pd: 515W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 90.72 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## 技术信息�/�Technical�Information
> IGBT-模块IGBT-modules FP100R12KT4
**==> picture [86 x 38] intentionally omitted <==**
EconoPIM™3�Modul�mit�Trench/Feldstopp�IGBT4�und�Emitter�Controlled4�Diode� EconoPIM™3�module�with�trench/fieldstop�IGBT4�and�Emitter�Controlled4�diode�
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
**初步数据 Preliminary�Data**
|技术信息/TechnicalInformation<br>FP100R12KT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|EconoPIM™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode<br>EconoPIM™3modulewithtrench/fieldstopIGBT4andEmitterControlled4diode<br>preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>515<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,20<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 3,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,27<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 3000 A/µs (Tvj= 150°C)<br>RGon= 1,6Ω<br>Eon<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 1,6Ω<br>Eoff<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,29<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,13<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
1
技术信息�/�Technical�Information IGBT-模块IGBT-modules FP100R12KT4
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|100|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1550<br>1500|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||115<br>125<br>130||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||9,50<br>17,5<br>20,5||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,50<br>6,00<br>7,50||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,50|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,225||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|100|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|150|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|1150<br>880|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|6600<br>3850|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 100 A|VF||1,00||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,40|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,18||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS|dateofpublication:2013-11-04|
|---|---|
|approvedby:RS|revision:2.0|
2
技术信息�/�Technical�Information IGBT-模块IGBT-modules FP100R12KT4
**==> picture [86 x 38] intentionally omitted <==**
## **初步数据 Preliminary�Data**
## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FP100R12KT4<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-11-04<br>revision:2.0<br>**初步数据**<br>**PreliminaryData**<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175°C<br>Ptot<br>280<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,25<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGon= 15Ω<br>Eon<br>5,70<br>7,70<br>8,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= t.b.d. nH<br>VGE= ±15 V<br>RGoff= 15Ω<br>Eoff<br>2,80<br>4,30<br>4,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 125°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,54<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,245<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
3
## 技术信息�/�Technical�Information IGBT-模块IGBT-modules FP100R12KT4
**==> picture [86 x 38] intentionally omitted <==**
**初步数据 Preliminary�Data**
## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|25|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>80,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,25|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||39,0<br>40,0<br>41,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,40<br>4,10<br>4,40||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,70||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,61||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **负温度系数热敏电阻�/�NTC-Thermistor**
## **特征值�/�Characteristic�Values**
|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||
prepared�by:�AS date�of�publication:�2013-11-04 approved�by:�RS revision:�2.0
4
IGBT-模块 IGBT-modules
## FP100R12KT4
## **初步数据**
|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>E44 (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0||mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~||mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|杂散电感,模块||LsCE||40||nH|
|最大结温<br>Maximum junction temperature|aS3S 2)-4 WEB /inverter, brake-chopper<br>Ties / rectifier|Tvj max|||175<br>150|°C<br>°C|
|在开关状态下温度<br>Temperature under switching conditions|aE BS ll2)-H WEE /inverter, brake-chopper<br>Ties / rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|储存温度<br>模块安装的安装扭距<br>~~Storage temperature~~<br>Mounting torque for modul mounting|~~ee ~~<br>$e MS RIAN<br>WASH TRR<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|重量<br>Weight||G||300||g|
5
## IGBT-模块 #£ IGBT-modules 7 {3B / Technical Information FP100R12KT4
## **初步数据**
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>200 a | y v 200 se |<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 VGE = 17V<br>E Tvj = 150°C OL) F VGE = 15V oR<br>VGE = 13V<br>160 ee ee 160 | VGE = 11V 77eaae<br>VGE = 9V<br>140 Pp ee 140 JE S e fh<br>eee /<br>120 [i ee eee 120 sean<br>eeewe /; ; }<br>100 100<br>80 ae ee ee 80 ee<br>eee eee Cees<br>60 ee 60<br>ee eee ee<br>een¢ canei /<br>40 40<br>20 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>eV tStE IGBT, HAAS (BZ) FFA IGBT, HAAS ( HZ!)<br>transfer characteristic IGBT,Inverter (typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =fil C)<br>VCE =20V VGE =+15V,R Gon =16 Ω ,R Goff =16 Ω ,V CE =600V<br>200 —— 30 _ —_—_—_—_ |__| | | | | sl<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 Tvj = 125°C ee ee Eoff, Tvj = 125°C Sees<br>Tvj = 150°C fe | Eon, Tvj = 150°C Pt<br>/ ad | 25 ii Eoff, Tvj = 150°C esa eeee eeee eeeeeeee<br>160<br>140 Pf | | ep“ a ee aeda ee ee eee<br>20<br>aee<br>120 aeeee ee ee<br>100 /\!i 15 aa eeee ee ee ee ee ee ee eee<br>aaa eeea esee e e aa A eeee ee<br>80<br>10 aa eyee ee 2 a aeeee ee<br>j a ee<br>60<br>a A<br>a ee>ee ee ee ee<br>a ee<br>40<br>; 5 a ssee<br>20 a a a a ee ee ee ee<br>0 L eee 0 ee ee ee ee ee e e<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules
## FP100R12KT4
## **初步数据**
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**----- Start of picture text -----**<br>
Eon ={(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1| C =100A,V CE =600V<br>25 PE orsyetblL LLL 1 OOo<br>I Eon, Tvj = 125°C a H—L ZthJC : IGBT ER<br>I EEoffon, T, Tvjvj = 125°C = 150°C a eI<br>I Eoff, Tvj = 150°C Ho | fT PCIE CT<br>20<br>a ee<br>PT TT . ae ee<br>e e e eee YX<br>FEEEEEE EERE CEE 0,1 Le.<br>15 annaP| [| | ft f peepanoy fy ye yt yt atta 2|oe oo<br>a ed | ot AEn<br>10 eeePPP rPePe eet eeer ey fy LATTEI, ETT<br>YT ee /<br>| | a4A-tede-FrtcF erratatreet T L 0,01 ©/ ee<br>pepe aSSS SEE SR SEE<br>5 rit; ee ee |<br>rit; tT ey ey ey ry a ee Pe i: 1 2 3 4<br>a ||<br>ri[K/W]: 0,0174 0,0957 0,0928 0,0841<br>τ i[s]: 0,01 0,02 0,05 0,1<br>FEE EEE EEEee EEE EE | ill<br>PE o ol<br>0 0,001<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>R22FR IGBT, #228 ( RBSOA ) EASE — RSwe ( aA)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =+15V,R Goff =16 Ω ,T vj =150°C<br>220 200<br>Tvj = 25°C<br>200 180 Tvj = 125°C<br>PEP EEE F Tvj = 150°C e<br>180<br>160<br>IC, Modul<br>160 IC, Chip<br>140<br>140<br>120<br>120<br>100<br>100<br>80<br>80<br>60<br>60<br>40<br>4020 PETEPEP TTPP}EE EEN 20 LLL p erer<br>0 0 ae tT |<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules
## FP100R12KT4
## **初步数据**
**==> picture [485 x 279] intentionally omitted <==**
**----- Start of picture text -----**<br>
Erec =f(I F) Erec =f(R G)<br>RGon JN, Ω ,V CE =600V IF = TOO A.V CE = 600 V<br>10 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 FeL Erec, Tvj = 150°C L 9 f Erec, Tvj = 150°C e<br>8 8<br>7 7<br>6 Pt. TEE} 6 LEE<br> a prt<br>5 5<br>COPE] aE<br>4 eee 4 eee<br>3 ee 3 ee<br>2 CVECEEEEE) — 2 COCeeeecceerrree<br>1 1<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>E [mJ] E [mJ]<br>**----- End of picture text -----**<br>
> IFF =f(V F))
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**----- Start of picture text -----**<br>
ZthJC =f (t) IFF =f(V F))<br>1 200<br>$ ZthJC : Diode F SIP Tvj = 25°C |<br>=eee eeeSee esl Tiee eee 180 —| Tvj = 150°C Till] q]<br>YTaPIETTT OEACI TT FT | TTT TT TT TTT 160 TTTPTT D ILLPYLLL AE<br>140<br>0,1 Zoe |<br>SEEPtSEH Se 120 PET] | TLE Ly ARE:<br>rTYTPT[YTVELTATTTTTTTTTTTT TTEETTTT TTTTTTTT] 100 PET] | TL ELL RAL<br>80<br>0,01<br>PT T T TTTT CE TTTTTTET TTT TTT TTTTTT 6040 PET TL | | AACE! EE<br>i: 1 2 3 4<br>PT TT r τ ii[K/W]: [s]: 0,03 0,01 0,165 0,02 0,16 0,05 T 0,145 0,1 20 ZY<br>0,001 LM orm } SL 0 ee [Y][E]<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br>
8
IGBT-模块 IGBT-modules
## FP100R12KT4
## **初步数据**
**==> picture [486 x 279] intentionally omitted <==**
**----- Start of picture text -----**<br>
IC =f(V CE) IF =f(V F)<br>VGE ts Vv<br>100 45<br>Tvj = 25°C Tvj = 25°C<br>90 F Tvj = 125°C 40 Tvj = 125°C<br>L Tvj = 150°C es] P Tvj = 150°C oe<br>80<br>35<br>70<br>30<br>60<br>25<br>pfpi BRRRREEEP Ane<br>50<br>Le 20 COCA yee<br>40<br>15<br>30<br>ae itt aT<br>i a 10 v/<br>2010 5 ite<br>0 0<br>PLATT TT Li [bbe] a,<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules
## FP100R12KT4
## **初步数据**
## **使用条件和条款**
## 使用条件和条款
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11
Updated at April 28, 2026
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