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FP100R12KT4B11BOSA1
IGBT Module, PIM Three Phase Input Rectifier, 100 A, 1.75 V, 515 W, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:515W; Collector Emitter Voltage V(br)ceo:1.2kV; Transist
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoPIM 3
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 515W
- IGBT Configuration: PIM Three Phase Input Rectifier
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 100A
- Power Dissipation Pd: 515W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.75V
- Collector Emitter Saturation Voltage Vce(on): 1.75V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 94.68 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-模块 IGBT-modules
## FP100R12KT4_B11
VCES = 1200V IC nom = 100A / ICRM = 200A
- **典型应用** • 辅助逆变器 • 电机传动 • 伺服驱动器
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## **电气特性**
- 低开关损耗
- T yop =
- • VCEsat • 1K V CEsat
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- T yop =
- • VCEsat with • Low V CEsat
## **机械特性**
- 高功率循环和温度循环能力
- • 集成NTC温度传感器 • 铜基板
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- 标封装
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1
技术信息�/�Technical�Information IGBT-模块 IGBT-modules FP100R12KT4_B11
**==> picture [86 x 38] intentionally omitted <==**
## **IGBT,�逆变器�/�IGBT,Inverter 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FP100R12KT4_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-16<br>revision:3.0<br>**IGBT,逆变器/IGBT,Inverter**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>100<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>200<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>515<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>IC= 100 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,10<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 3,80 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,80<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>7,5<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>6,30<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,27<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,6Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 100 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,6Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, di/dt = 3000 A/µs (Tvj= 150°C)<br>RGon= 1,6Ω<br>Eon<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 100 A, VCE= 600 V, LS= 40 nH<br>VGE= ±15 V, du/dt = 3600 V/µs (Tvj= 150°C)<br>RGoff= 1,6Ω<br>Eoff<br>5,50<br>8,50<br>9,50<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>400<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,29<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,13<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
2
IGBT-模块 IGBT-modules FP100R12KT4_B11
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **二极管,逆变器�/�Diode,�Inverter 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|100|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|200|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|1550<br>1500|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>IF= 100 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,70<br>1,65<br>1,65|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||115<br>125<br>130||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||9,50<br>17,5<br>20,5||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 100 A, - diF/dt = 3000 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||3,50<br>6,00<br>7,50||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,50|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,225||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **二极管,整流器�/�Diode,�Rectifier 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1600|1600||V|
|---|---|---|---|---|---|---|
|最大正向均方根电流(每芯片)<br>MaximumRMSforwardcurrentperchip|TC= 80°C|IFRMSM|100|||A|
|最大整流器输出均方根电流<br>MaximumRMScurrentatrectifieroutput|TC= 80°C|IRMSM|150|||A|
|正向浪涌电流<br>Surgeforwardcurrent|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|IFSM|1150<br>880|||A<br>A|
|I2t-值<br>I²t-value|tp= 10 ms, Tvj= 25°C<br>tp= 10 ms, Tvj= 150°C|I²t|6600<br>3850|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|Tvj= 150°C, IF= 100 A|VF||1,00||V|
|反向电流<br>Reversecurrent|Tvj= 150°C, VR= 1600 V|IR||1,00||mA|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||0,40|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,18||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
|preparedby:AS|dateofpublication:2013-10-16|
|---|---|
|approvedby:RS|revision:3.0|
3
IGBT-模块 IGBT-modules FP100R12KT4_B11
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **IGBT,�制动-斩波器�/�IGBT,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values**
|技术信息/TechnicalInformation<br>FP100R12KT4_B11<br>IGBT-模块<br>IGBT-modules||
|---|---|
|preparedby:AS<br>approvedby:RS<br>dateofpublication:2013-10-16<br>revision:3.0<br>**IGBT,制动-斩波器/IGBT,Brake-Chopper**<br>**最大额定值/MaximumRatedValues**<br>集电极－发射极电压<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>连续集电极直流电流<br>ContinuousDCcollectorcurrent<br>TC= 95°C, Tvj max= 175°C<br>IC nom<br>50<br>A<br>集电极重复峰值电流<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>100<br>A<br>总功率损耗<br>Totalpowerdissipation<br>TC= 25°C, Tvj max= 175<br>Ptot<br>280<br>W<br>栅极－发射极峰值电压<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**特征值/CharacteristicValues**<br>min.<br>typ.<br>max.<br>集电极－发射极饱和电压<br>Collector-emittersaturationvoltage<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>IC= 50 A, VGE= 15 V<br>VCE sat<br>1,85<br>2,15<br>2,25<br>2,15<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>栅极阈值电压<br>Gatethresholdvoltage<br>IC= 1,60 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,2<br>5,8<br>6,4<br>V<br>栅极电荷<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>0,38<br>µC<br>内部栅极电阻<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>4,0<br>Ω<br>输入电容<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>2,80<br>nF<br>反向传输电容<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>0,10<br>nF<br>集电极-发射极截止电流<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>1,0<br>mA<br>栅极-发射极漏电流<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>100<br>nA<br>开通延迟时间(电感负载)<br>Turn-ondelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>td on<br>0,16<br>0,17<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>上升时间(电感负载)<br>Risetime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 15Ω<br>tr<br>0,03<br>0,04<br>0,04<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断延迟时间(电感负载)<br>Turn-offdelaytime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>td off<br>0,33<br>0,43<br>0,45<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>下降时间(电感负载)<br>Falltime,inductiveload<br>IC= 50 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 15Ω<br>tf<br>0,08<br>0,15<br>0,17<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>开通损耗能量(每脉冲)<br>Turn-onenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGon= 15Ω<br>Eon<br>5,70<br>7,70<br>8,40<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>关断损耗能量(每脉冲）<br>Turn-offenergylossperpulse<br>IC= 50 A, VCE= 600 V, LS= 20 nH<br>VGE= ±15 V<br>RGoff= 15Ω<br>Eoff<br>2,80<br>4,30<br>4,80<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>短路数据<br>SCdata<br>VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>180<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>结－外壳热阻<br>Thermalresistance,junctiontocase<br>每个IGBT/perIGBT<br>RthJC<br>0,54<br>K/W<br>外壳－散热器热阻<br>Thermalresistance,casetoheatsink<br>每个IGBT/perIGBT<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)<br>RthCH<br>0,245<br>K/W<br>在开关状态下温度<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C||
4
IGBT-模块 IGBT-modules FP100R12KT4_B11
## 技术信息�/�Technical�Information
**==> picture [86 x 38] intentionally omitted <==**
## **二极管，制动-斩波器�/�Diode,�Brake-Chopper 最大额定值�/�Maximum�Rated�Values**
|反向重复峰值电压<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V|
|---|---|---|---|---|---|---|
|连续正向直流电流<br>ContinuousDCforwardcurrent||IF|25|||A|
|正向重复峰值电流<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|50|||A|
|I2t-值<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|90,0<br>80,0|||A²s<br>A²s|
|**特征值/CharacteristicValues**|||min.|typ.|max.||
|正向电压<br>Forwardvoltage|IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>IF= 25 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,75<br>1,75<br>1,75|2,15|V<br>V<br>V|
|反向恢复峰值电流<br>Peakreverserecoverycurrent|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||39,0<br>40,0<br>41,0||A<br>A<br>A|
|恢复电荷<br>Recoveredcharge|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||2,40<br>4,10<br>4,40||µC<br>µC<br>µC|
|反向恢复损耗（每脉冲）<br>Reverserecoveryenergy|IF= 25 A, - diF/dt = 1200 A/µs (Tvj=150°C)<br>VR= 600 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||0,90<br>1,50<br>1,70||mJ<br>mJ<br>mJ|
|结－外壳热阻<br>Thermalresistance,junctiontocase|每个二极管/perdiode|RthJC|||1,35|K/W|
|外壳－散热器热阻<br>Thermalresistance,casetoheatsink|每个二极管/perdiode<br>λPaste=1W/(m·K)/λgrease=1W/(m·K)|RthCH||0,61||K/W|
|在开关状态下温度<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C|
## **负温度系数热敏电阻�/�NTC-Thermistor**
## **特征值�/�Characteristic�Values**
|**负温度系数热敏电阻/NTC-Thermistor**<br>|**负温度系数热敏电阻/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**特征值/CharacteristicValues**|||min.<br>typ.||max.||
|额定电阻值<br>Ratedresistance|TC= 25°C|R25||5,00||kΩ|
|R100偏差<br>DeviationofR100|TC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|耗散功率<br>Powerdissipation|TC= 25°C|P25|||20,0|mW|
|B-值<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-值<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-值<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
|根据应用手册标定<br>Specificationaccordingtothevalidapplicationnote.|||||||
prepared�by:�AS date�of�publication:�2013-10-16 approved�by:�RS revision:�3.0
5
IGBT-模块 IGBT-modules
## FP100R12KT4_B11
|#R_<br>| Module|||||||
|---|---|---|---|---|---|---|
|绝缘测试电压<br>模块基板材料<br>内部绝缘<br>~~Isolation test voltage~~<br>~~Material of module baseplate ~~<br>Internal isolation|RMS, f = 50 Hz, t = 1 min.<br>~~ee ~~<br> ~~ee ~~<br>E44 (class 1, IEC 61140)<br>basic insulation (class 1, IEC 61140)|VISOL<br> ~~ee~~<br> ~~ee~~||2,5<br>Cu<br>Al2O3||kV|
|爬电距离<br>Creepage distance|im-BEA /terminaltoheatsink<br>imF-Ym /terminal to terminal|||10,0||mm|
|电气间隙<br>Clearance<br>相对电痕指数<br>~~Comperative tracking index~~|im-BEA /terminal toheatsink<br>im F-Ym / terminal to terminal<br>~~ee~~|CTI<br>~~ee~~|min.|7,5<br>> 200<br>typ.<br>max.<br>~~ee~~||mm|
|外壳－散热器热阻<br>Thermal resistance, case to heatsink|Paste<br>grease<br>#3-SER /permodule<br>= 1 W/(m‘k)/<br>= 1 W/(m-k)|RthCH||0,009||K/W|
|杂散电感,模块||LsCE||40||nH|
|模块引线电阻,端子-芯片<br>最大结温<br>terminals ~~- chip~~<br>Maximum junction temperature|TC<br>=<br>°<br>HN<br>ij<br>~~25°C, STFA/ per switch~~<br>aE BS<br>ll2)-H WEE /inverter, brake-chopper<br>Ties / rectifier|RCC'+EE'<br>RAA'+CC'<br>4,00<br>3,00<br>Tvj max<br>175<br>150<br>~~tt ff~~||||mΩ<br>°C<br>°C|
|在开关状态下温度<br>Temperature under switching conditions|aS3S 2)-4 WEB /inverter, brake-chopper<br>Ties / rectifier|Tvj op|-40<br>-40||150<br>150|°C<br>°C|
|储存温度<br>模块安装的安装扭距<br>~~Storage temperature~~<br>Mounting torque for modul mounting|~~ee ~~<br>$Ree MS~~RIAN~~<br>WAFHT<br>Screw M5<br>- Mounting according to valid application note|Tstg<br>M<br> ~~ee ee~~|-40<br>125<br>3,00<br>-<br>6,00<br>~~ee~~|||°C<br>Nm|
|重量<br>Weight||G||300||g|
6
## & / Technical Information
## IGBT-模块 IGBT-modules
## FP100R12KT4_B11
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IC =f(V CE) IC =f(V CE)<br>VGE =15V Tvj = 150°C<br>200 a | y vo 200 es<br>Tvj = 25°C VGE = 19V<br>180 Tvj = 125°C 180 B VGE = 17V oe<br>E Tvj = 150°C LS) VGE = 15V |<br>VGE = 13V<br>160 Pe 160 VGE = 11V i7ceann<br>VGE = 9V<br>[E] [e]<br>140 140<br>Pt | py [ye]<br>120 eee 120 /<br>[gs eee eee eae<br>100 eaeaf 100 eeeV’ f eee.<br>80 80<br>ae eee ee eee Zee<br>60 ee 60<br>¢ ee ee<br>40 40<br>ee ee ee i /<br>20 20<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br>feFStt IGBT, HaseS (FAA) FFHIRE IGBT, HSS ( FAB)<br>transfer characteristic IGBT,Inverter(typical) switching losses IGBT,Inverter (typical)<br>IC =f(V GE) Eon =f(l),E C off =f(I C)<br>VCE =20V VGE =415V,R Gon =16 Ω ,R Goff =16 Ω ,V CE =600V<br>200 30<br>-—_—_— (_HF<br>Tvj = 25°C Eon, Tvj = 125°C<br>180 F Tvj = 125°C t | i Eoff, Tvj = 125°C ry a ee<br>Tvj = 150°C Eon, Tvj = 150°C<br>/ adfe 25 |i Eoff, Tvj = 150°C aepTee ee<br>160<br>140 a a<br>P| | | |ye) E poS<br>20<br>a eees ZT<br>po<br>120<br>/!a poYO<br>100 15 a ee es<br>aa eeA ee ee<br>ee ee a)<br>po<br>80<br>aeya<br>po<br>10<br>60 / aAe<br>a ee<br>40 aa 2eeee ee ee<br>j 5 a a ee<br>20 Za a a ee ee ee ee<br>0 L woe 0 es ee ee ee ee ee ee e<br>5 6 7 8 9 10 11 12 0 20 40 60 80 100 120 140 160 180 200<br>VGE [V] IC [A]<br> [A] [A]<br>IC IC<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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## IGBT-模块 IGBT-modules
## FP100R12KT4_B11
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Eon ={(R),E G off =f(R G) ZthJC =f (t)<br>VGE =+15V,1| C =100A,V CE =600V<br>25 eee 1 Leea<br>i Eon, Tvj = 125°C a HH—E ZthJC : IGBT E<br>I Eoff, Tvj = 125°C HH} tH<br>Eon, Tvj = 150°C<br>L a Ee<br>Eoff, Tvj = 150°C<br>20 a Hott | | tel a<br>ee<br>c a ee<br>e e e eee YX<br>FCEEEE EE EEEREESE 0,1 .<br>15 P|anna| | [| fl ee poeanyt tt Ptea 2|tie<br>a ed | ot AEn<br>a TAU ETI, ETT<br>10 eeePP eer ETT ET ee / /<br>| A-tede-Frtc tree TL 0,01 © ee<br>pppee eee eeaieree ee |<br>5<br>eee ee |||i<br>i: 1 2 3 4<br>a a PT ri[K/W]: 0,0174 0,0957 0,0928 0,0841 till<br>τ i[s]: 0,01 0,02 0,05 0,1<br>REE EEE EEE Er EEE<br>PE o cc<br>0 0,001<br>0 2 4 6 8 10 12 14 16 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>RRSR IGBT, #28 ( RBSOA ) EARS RSS ( HA)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) forward characteristic of Diode, Inverter (typical)<br>IC =f(V CE) IF =f(V F)<br>VGE =+15V,R Goff =1.6 Ω ,T vj =150°C<br>220 200<br>Tvj = 25°C<br>200 180 Tvj = 125°C<br>PETE F Tvj = 150°C e<br>180<br>160<br>IC, Modul<br>160 IC, Chip<br>140<br>140<br>120<br>120<br>100<br>100<br>80<br>80<br>60<br>60<br>40<br>40<br>20 PEE EEE Ee 20 PEL ey<br>an<br>0 PETE EIN, TY 0 | ere | EE | dd<br>0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [K/W]<br>E [mJ]<br>thJC<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules
## FP100R12KT4_B11
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Erec =f(I F) Erec =f(R G)<br>RGon 6 Ω ,V CE =600V IF = T00A.V CE = 600 V<br>10 10<br>Erec, Tvj = 125°C Erec, Tvj = 125°C<br>9 Erec, Tvj = 150°C 9 Erec, Tvj = 150°C<br>ee ee<br>8 8<br>7 7<br>6 Ene FTE] OLE 6 RR<br>a prt<br>5 5<br>PLT) Ue<br>4 Pier EEE 4 LEE EEPRT<br>3 ny ee ee ee 3 eee<br>OEE PEELE EEE EE EE<br>2 2 LTTE<br>1 7 TTT [TEEPE)] 1<br>0 0<br>0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16<br>IF [A] RG [ Ω ]<br>EAS RB ees FOmEst hE Bis ( BB)<br>transient thermal impedance Diode, Inverter forward characteristic of Diode, Rectifier (typical)<br>ZthJC =f (t) IF =f(V F)<br>1 (e ZthJC : Diode ne 200 —<—<— Tvj = 25°C 7<br>oo$F SIPTT 180 ( Tvj = 150°C Re ‘||<br>aPT Te FT TTT] 160 TTT D ILL LLL AE<br>PT CLUE PACE ETI ET 140 PTT PY<br>TEIN<br>0,1<br>ee LAE ETT<br>Aee ES SET 120 PET] | TLE Ly ARE<br>rTVCErT YTITALTTCCTTT TTT] 100 PET] | TL ELL RAL<br>PALAU TIE ET EA 80 PET] | TL EL LARt LE<br>0,01<br>De f<br>60<br>a ee ee el /<br>pePT ETT TTT] 40 Py TY TY EA1<br>i: 1 2 3 4<br>PTa a TT r τ ii[K/W]: [s]: ee 0,03 0,01 0,165 0,02 0,16 0,05 T 0,145 0,1 || 20 PET] ] LeaZY Eg<br>0,001 LU |im o SEE 0 EE er YEE<br>0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4<br>t [s] VF [V]<br>E [mJ] E [mJ]<br> [K/W]thJC [A]IF<br>Z<br>**----- End of picture text -----**<br>
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IGBT-模块 IGBT-modules
## FP100R12KT4_B11
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IC =f(V CE) IF =f(V F)<br>VGE Ls Vv<br>100 45<br>Tvj = 25°C Tvj = 25°C<br>90 F Tvj = 125°C 40 Tvj = 125°C<br>L Tvj = 150°C es] P Tvj = 150°C oe<br>80<br>35<br>70<br>30<br>60<br>25<br>50 pfpi BRRRREEEP Ane<br>Le 20 COCA yee<br>40<br>15<br>30<br>ae itt aT<br>i a 10 v/<br>2010 5 ite<br>0 0<br>Pl7A TTT TT | Libeea,<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4<br>VCE [V] VF [V]<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br>
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## 技术信息�/�Technical�Information
IGBT-模块 IGBT-modules FP100R12KT4_B11
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## **封装尺寸�/�package�outlines**
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## IGBT-模块 IGBT-modules FP100R12KT4_B11
## **使用条件和条款**
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12
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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