FNA41060B2

## **ON Semiconductor** 

## **Is Now** 

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October 2017 

## **FNA41060 / FNA41060B2 Motion SPM[®] 45 Series** 

## **Features** 

- UL Certified No. E209204 (UL1557) 

- 600 V - 10 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection 

- Low Thermal Resistance Using Ceramic Substrate 

- Low-Loss, Short-Circuit Rated IGBTs 

- Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout 

- Built-In NTC Thermistor for Temperature Monitoring 

- Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing 

- Single-Grounded Power Supply 

## **General Description** 

FNA41060 / FNA41060B2 is a Motion SPM[®] 45 module providing a fully-featured, high-performance inverter output stage for AC Induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features including under-voltage lockouts, over-current shutdown, thermal monitoring, and fault reporting. The built-in, highspeed HVIC requires only a sing le supply voltage and translates the incoming logic-level gate inpu ts to the high-voltage, high-current drive signals required to properly drive the module's robust short-circuit-rated IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. 

- Optimized for 5 kHz Switching Frequency 

- Isolation Rating: 2000 Vrms / min. 

## **Applications** 

- Motion Control - Home Appliance / Industrial Motor 

## **Related Resources** 

- _AN-9070 - Motion SPM® 45 Series Users Guide_ 

- _AN-9071 - Motion SPM® 45 Series Thermal Performance Information_ 

- _AN-9072 - Motion SPM® 45 Series Mounting Guidance_ 

- _RD-344 - Reference Design (Three Shunt Solution)_ 

- _RD-345 - Reference Design (One Shunt Solution)_ 

**Figure 1. Package Overview** 

**Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity** FNA41060 FNA41060 SPMAA-A26 Rail 12 FNA41060B2 FNA41060B2 SPMAA-C26 Rail 12 ~~——_—~~ 

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## **Integrated Power Functions** 

- 600 V - 10 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3) 

## **Integrated Drive, Protection, and System Control Functions** 

- For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit Under-Voltage Lock-Out (UVLO) protection 

- For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit Under-Voltage Lock-Out (UVLO) protection 

- Fault signaling: corresponding to UVLO (low-side supply) and SC faults 

- Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt trigger input 

## **Pin Configuration** 

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VB(U)(26)<br>VTH(1) VS(U)(25)<br>RTH(2)<br>VB(V)(24)<br>VS(V)(23)<br>: :<br>P(3)<br>VB(W)(22)<br>VS(W)(21)<br>c i:<br>U(4)<br>Case Temperature (TC)  IN(UH)(20)<br>Detecting Point IN(VH)(19)<br>V(5) IN(WH)(18)<br>VCC(H)(17)<br>VCC(L)(16)<br>W(6)<br>COM(15)<br>IN(UL)(14)<br>NU(7) IN(VL)(13)<br>IN(WL)(12)<br>NV(8) VFO(11)<br>NW(9) CSC(10)<br>**----- End of picture text -----**<br>


**Figure 2. Top View** 

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FNA41060 / FNA41060B2 

## **Pin Descriptions** 

|**Pin Number**|**Pin Name**|**Pin Description**|
|---|---|---|
|1|VTH|Thermistor Bias Voltage|
|2|RTH|Series Resistor for the Use of Thermistor (Temperature Detection)|
|3|P|Positive DC-Link Input|
|4|U|Output for U-Phase|
|5|V|Output for V-Phase|
|6|W|Output for W-Phase|
|7|NU|Negative DC-Link Input for U-Phase|
|8|NV|Negative DC-Link Input for V-Phase|
|9|NW|Negative DC-Link Input for W-Phase|
|10|CSC|Capacitor (Low-Pass Filter) for Short-circuit Current Detection Input|
|11|VFO|Fault Output|
|12|IN(WL)|Signal Input for Low-Side W-Phase|
|13|IN(VL)|Signal Input for Low-Side V-Phase|
|14|IN(UL)|Signal Input for Low-Side U-Phase|
|15|COM|Common Supply Ground|
|16|VCC(L)|Low-Side Common Bias Voltage for IC and IGBTs Driving|
|17|VCC(H)|High-Side Common Bias Voltage for IC and IGBTs Driving|
|18|IN(WH)|Signal Input for High-Side W-Phase|
|19|IN(VH)|Signal Input for High-Side V-Phase|
|20|IN(UH)|Signal Input for High-Side U-Phase|
|21|VS(W)|High-Side Bias Voltage Ground for W-Phase IGBT Driving|
|22|VB(W)|High-Side Bias Voltage for W-Phase IGBT Driving|
|23|VS(V)|High-Side Bias Voltage Ground for V-Phase IGBT Driving|
|24|VB(V)|High-Side Bias Voltage for V-Phase IGBT Driving|
|25|VS(U)|High-Side Bias Voltage Ground for U-Phase IGBT Driving|
|26|VB(U)|High-Side Bias Voltage for U-Phase IGBT Driving|



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## **Internal Equivalent Circuit and Input/Output Pins** 

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VTH  (1)<br>Thermister RTH (2)<br>(26) VB(U) UVB P (3)<br>(25) VS(U) UVS<br>OUT(UH)<br>(24) VB(V) VVB UVS U(4)<br>(23) VS(V) VVS<br>(22) VB(W)<br>WVB<br>(21) VS(W) WVS<br>OUT(VH)<br>(20) IN(UH) IN(UH) VVS V (5)<br>(19) IN(VH) IN(VH)<br>(18) IN(WH) IN(WH)<br>(17) VCC(H)<br>VCC OUT(WH)<br>COM WVS W(6)<br>(16) VCC(L) VCC<br>OUT(UL)<br>(15) COM<br>COM<br>NU (7)<br>(14) IN(UL) IN(UL)<br>(13) IN(VL) IN(VL)<br>(12) IN(WL) IN(WL) OUT(VL)<br>(11) VFO NV (8)<br>VFO<br>(10) CSC<br>C(SC)<br>OUT(WL)<br>NW (9)<br>**----- End of picture text -----**<br>


## **Figure 3. Internal Block Diagram** 

## **1st Notes:** 

1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. 

2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions. 

3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 

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**Absolute Maximum Ratings** (TJ = 25°C,  unless otherwise specified.) 

## **Inverter Part** 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VPN|Supply Voltage|Applied between P - NU, NV, NW|450|V|
|VPN(Surge)|Supply Voltage (Surge)|Applied between P - NU, NV, NW|500|V|
|VCES|Collector - Emitter Voltage||600|V|
|± IC|Each IGBT Collector Current|TC= 25°C, TJ ＜150°C|10|A|
|± ICP|Each IGBT Collector Current (Peak)|TC= 25°C, TJ ＜150°C, Under 1 ms Pulse<br>Width|20|A|
|PC|Collector Dissipation|TC= 25°C per Chip|34|W|
|TJ|Operating Junction Temperature|(2nd Note 1)|-40 ~ 150|°C|



## **2nd Notes:** 

1. The maximum junction temperature rating of the power chips integrated within the Motion SPM[®] 45 product is 150C. 

## **Control Part** 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VCC|Control Supply Voltage|Applied between VCC(H), VCC(L) - COM|20|V|
|VBS|High - Side Control Bias Voltage|Applied between VB(U)- VS(U), VB(V)- VS(V),<br>VB(W)- VS(W)|20|V|
|VIN|Input Signal Voltage|Applied between IN(UH), IN(VH), IN(WH),<br>IN(UL), IN(VL), IN(WL)- COM|-0.3 ~ VCC+ 0.3|V|
|VFO|Fault Output Supply Voltage|Applied between VFO- COM|-0.3 ~ VCC+ 0.3|V|
|IFO|Fault Output Current|Sink Current at VFOpin|1|mA|
|VSC|Current-Sensing Input Voltage|Applied between CSC- COM|-0.3 ~ VCC+ 0.3|V|



## **Bootstrap Diode Part** 

|**Symbol**|**Parameter**||**Conditions**|**Conditions**|**Rating**|**Rating**|**Rating**|**Unit**|
|---|---|---|---|---|---|---|---|---|
|VRRM|Maximum Repetitive Reverse Voltage||||600|||V|
|IF|Forward Current||TC= 25°C, TJ ＜150°C||0.50|||A|
|IFP|Forward Current (Peak)||TC= 25°C, TJ ＜150°C, Under 1 ms Pulse<br>Width||1.50|||A|
|TJ|Operating Junction Temperature||||-40 ~ 150|||°C|
|**Total System**|||||||||
|**Symbol**|**Parameter**||**Conditions**||**Rating**|||**Unit**|
|VPN(PROT)|Self-Protection Supply Voltage Limit<br>(Short-Circuit Protection Capability)||VCC= VBS= 13.5 ~ 16.5 V<br>TJ= 150°C,  Non-Repetitive, < 2s||400|||V|
|TSTG|Storage Temperature||||-40 ~ 125|||°C|
|VISO|Isolation Voltage||60 Hz, Sinusoidal, AC 1 Minute, Connect<br>Pins to Heat Sink Plate||2000|||Vrms|
|**Thermal Resistance**|||||||||
|**Symbol**|**Parameter**|**Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**||
|Rth(j-c)Q|Junction to Case Thermal Resistance|Inverter IGBT Part (per 1 / 6 module)||-|-|3.6|°C / W||
|Rth(j-c)F||Inverter FWDi Part (per 1 / 6 module)||-|-|4.8|°C / W||



**2nd Notes:** 

2.  For the measurement point of case temperature (TC), please refer to Figure 2. 

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**Electrical Characteristics** (TJ = 25°C, unless otherwise specified.) 

## **Inverter Part** 

|**Inverter Part**|**Inverter Part**||||||||
|---|---|---|---|---|---|---|---|---|
|**Symbol**||**Parameter**|**Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(SAT)||Collector - Emitter Saturation<br>Voltage|VCC= VBS= 15 V<br>VIN= 5 V|IC= 10 A, TJ= 25°C|-|1.7|2.2|V|
||VF|FWDi Forward Voltage|VIN= 0 V|IF= 10 A, TJ= 25°C|-|1.8|2.3|V|
|HS|tON|Switching Times|VPN= 300 V, VCC= VBS= 15 V, IC= 10 A<br>TJ= 25°C<br>VIN= 0 V5 V, Inductive Load<br>(2nd Note 3)||0.40|0.70|1.20|s|
||tC(ON)||||-|0.20|0.45|s|
||tOFF||||-|0.75|1.25|s|
||tC(OFF)||||-|0.25|0.50|s|
||trr||||-|0.15|-|s|
|LS|tON||VPN= 300 V, VCC= VBS= 15 V, IC= 10 A<br>TJ= 25°C<br>VIN= 0 V5 V, Inductive Load<br>(2nd Note 3)||0.40|0.70|1.20|s|
||tC(ON)||||-|0.20|0.45|s|
||tOFF||||-|0.75|1.25|s|
||tC(OFF)||||-|0.25|0.50|s|
||trr||||-|0.15|-|s|
||ICES|Collector - Emitter Leakage<br>Current|VCE= VCES||-|-|1|mA|



## **2nd Notes:** 

3.   tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. 

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100% IC 100% IC<br>trr<br>V CE IC IC V CE<br>V IN V IN<br>tON tOFF<br>tC(ON) tC(OFF)<br>10% IC<br>V IN(ON) 90% IC 10% V CE V IN(OFF) 10% V CE 10% IC<br>(a) turn-on (b) turn-off<br>**----- End of picture text -----**<br>


**Figure 4. Switching Time Definition** 

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|**Figure 5. Switching Loss Characteristics (Typical)**<br>**Control Part**<br>0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>0<br>100<br>200<br>300<br>400<br>500<br>600<br>700<br>**Inductive Load, VPN=300V, VCC=15V, TJ=25**℃<br>**IGBT Turn-ON,****_E_**~~**_on_**~~<br>**IGBT Turn-OFF,****_Eoff_**<br>**FRD Turn-OFF,****_E_**~~**_rec_**~~<br>SWITCHING LOSS, ESW[uJ]<br>COLLECTOR CURRENT, Ic[AMPERES]<br>0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>0<br>100<br>200<br>300<br>400<br>500<br>600<br>700<br>**Inductive Load, VPN=300V, VCC=15V, TJ=150**℃<br>**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**<br>SWITCHING LOSS, ESW[uJ]<br>COLLECTOR CURRENT, Ic[AMPERES]||1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=25**℃<br>**IGBT Turn-ON,****_E_**~~**_on_**~~<br>**IGBT Turn-OFF,****_Eoff_**<br>**FRD Turn-OFF,****_E_**~~**_rec_**~~<br>COLLECTOR CURRENT, Ic[AMPERES]<br>0<br>100<br>200<br>300<br>400<br>500<br>600<br>700<br>SWITCHING LOSS, ESW[uJ]|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=25**℃<br>**IGBT Turn-ON,****_E_**~~**_on_**~~<br>**IGBT Turn-OFF,****_Eoff_**<br>**FRD Turn-OFF,****_E_**~~**_rec_**~~<br>COLLECTOR CURRENT, Ic[AMPERES]<br>0<br>100<br>200<br>300<br>400<br>500<br>600<br>700<br>SWITCHING LOSS, ESW[uJ]|1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=25**℃<br>**IGBT Turn-ON,****_E_**~~**_on_**~~<br>**IGBT Turn-OFF,****_Eoff_**<br>**FRD Turn-OFF,****_E_**~~**_rec_**~~<br>COLLECTOR CURRENT, Ic[AMPERES]<br>0<br>100<br>200<br>300<br>400<br>500<br>600<br>700<br>SWITCHING LOSS, ESW[uJ]|0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=150**℃<br>**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**<br>COLLECTOR CURRENT, Ic[AMPERES]|0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=150**℃<br>**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**<br>COLLECTOR CURRENT, Ic[AMPERES]|0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=150**℃<br>**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**<br>COLLECTOR CURRENT, Ic[AMPERES]|0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=150**℃<br>**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**<br>COLLECTOR CURRENT, Ic[AMPERES]|0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=150**℃<br>**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**<br>COLLECTOR CURRENT, Ic[AMPERES]|0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=150**℃<br>**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**<br>COLLECTOR CURRENT, Ic[AMPERES]|0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=150**℃<br>**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**<br>COLLECTOR CURRENT, Ic[AMPERES]|0<br>1<br>2<br>3<br>4<br>5<br>6<br>7<br>8<br>9<br>10<br>11<br>**Inductive Load, VPN=300V, VCC=15V, TJ=150**℃<br>**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**<br>COLLECTOR CURRENT, Ic[AMPERES]|
|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||**IGBT Turn-ON,****_E_**~~**_on_**~~<br>**IGBT Turn-OFF,****_Eoff_**<br>**FRD Turn-OFF,****_E_**~~**_rec_**~~||||**IGBT Turn-ON,****_Eon_**<br>~~**IGBT Turn-OFF,**~~~~**_E_**~~**_off_**<br>**FRD Turn-OFF,****_Erec_**||||||
||||||||||||||
|||||||<br>|||||||
|||||||<br>|||||||
||||||||||||||
||||||||||||||
||||||||||||||
||0||||0|1|||||||
|**Symbol**||**Parameter**||**Conditions**|||||**Min.**|**Typ.**|**Max.**|**Unit**|
|IQCCH||Quiescent VCCSupply<br>Current||VCC(H)= 15 V, IN(UH,VH,WH)= 0 V|VCC(H)- COM||||-|-|0.10|mA|
|IQCCL||||VCC(L)= 15 V,  IN(UL,VL, WL)= 0 V|VCC(L)- COM||||-|-|2.65|mA|
|IPCCH||Operating VCCSupply<br>Current||VCC(L)= 15 V, fPWM= 20 kHz, duty<br>= 50%, Applied to One PWM Sig-<br>nal Input for High-Side|VCC(H)- COM||||-|-|0.15|mA|
|IPCCL||||VCC(L)= 15 V, fPWM= 20 kHz, duty<br>= 50%, Applied to One PWM Sig-<br>nal Input for Low-Side|VCC(L)- COM||||-|-|3.65|mA|
|IQBS||Quiescent VBSSupply<br>Current||VBS= 15 V, IN(UH, VH, WH)= 0 V|VB(U)- VS(U), VB(V)-<br>VS(V), VB(W)- VS(W)||||-|-|0.30|mA|
|IPBS||Operating VBSSupply<br>Current||VCC= VBS= 15 V, fPWM= 20 kHz,<br>Duty = 50%, Applied to One PWM<br>Signal Input for High-Side|VB(U)- VS(U), VB(V)-<br>VS(V), VB(W)- VS(W)||||-|-|2.00|mA|
|VFOH||Fault Output Voltage||VSC= 0 V, VFOCircuit: 10 kto 5 V Pull-up|||||4.5|-|-|V|
|VFOL||||VSC= 1 V, VFOCircuit: 10 kto 5 V Pull-up|||||-|-|0.5|V|
|VSC(ref)||Short-Circuit<br>Current Trip Level||VCC= 15 V (2nd Note 4)|||||0.45|0.50|0.55|V|
|UVCCD||Supply Circuit<br>Under-Voltage<br>Protection||Detection level|||||10.5|-|13.0|V|
|UVCCR||||Reset level|||||11.0|-|13.5|V|
|UVBSD||||Detection level|||||10.0|-|12.5|V|
|UVBSR||||Reset level|||||10.5|-|13.0|V|
|tFOD||Fault-Out Pulse Width|||||||30|-|-|s|
|VIN(ON)||ON Threshold Voltage||Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL),<br>IN(WL)- COM|||||-|-|2.6|V|
|VIN(OFF)||OFF Threshold Voltage|||||||0.8|-|-|V|
|RTH||Resistance of<br>Thermister||@TTH= 25°C, (2nd Note 5)|||||-|47|-|k|
|||||@TTH= 100°C|||||-|2.9|-|k|



**2nd Notes:** 

4. Short-circuit protection is functioning only at the low-sides. 

5. TTH is the temperature of thermister itselt. To know case temperature (TC), please make the experiment considering your application. 

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**----- Start of picture text -----**<br>
R-T Curve<br>600<br>550<br>R-T Curve in 50 ℃  ~ 125 ℃<br>500 20<br>450 16<br>400<br>12<br>350<br>8<br>300<br>250 4<br>200 0<br>50 60 70 80 90 100 110 120<br>150 Temperature [ ℃ ]<br>100<br>50<br>0<br>-20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120<br>Temperature TTH[ ℃ ]<br>] <br>]<br><br>Resistance[k<br>Resistance[k<br>**----- End of picture text -----**<br>


**Figure. 6. R-T Curve of The Built-In Thermistor** 

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**----- Start of picture text -----**<br>
Bootstrap Diode Part<br>Symbol Parameter Conditions Min. Typ. Max. Unit<br>VF Forward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V<br>trr Reverse-Recovery Time IF = 0.1 A, TC = 25°C - 80 - ns<br>Built-In Bootstrap Diode VF-IF Characteristic<br>1.0<br>0.9<br>0.8<br>0.7<br>0.6<br>0.5<br>0.4<br>0.3<br>0.2<br>0.1<br>T =25oC<br>C<br>0.0<br>0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15<br>VF [V]<br> [A]IF<br>**----- End of picture text -----**<br>


**==> picture [230 x 10] intentionally omitted <==**

**----- Start of picture text -----**<br>
Figure 7. Built-In Bootstrap Diode Characteristic<br>**----- End of picture text -----**<br>


- **2nd Notes:** 6.  Built-in bootstrap diode includes around 15 Ω resistance characteristic. 

8 

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## **Recommended Operating Conditions** 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VPN|Supply Voltage|Applied between P - NU, NV, NW|-|300|400|V|
|VCC|Control Supply Voltage|Applied between VCC(H), VCC(L)- COM|13.5|15.0|16.5|V|
|VBS|High-Side Bias Voltage|Applied between VB(U)- VS(U), VB(V)- VS(V), VB(W)-<br>VS(W)|13.0|15.0|18.5|V|
|dVCC/ dt,<br>dVBS/ dt|Control Supply Variation||-1|-|1|V /s|
|tdead|Blanking Time for<br>Preventing Arm-Short|For each input signal|1.5|-|-|s|
|fPWM|PWM Input Signal|- 40C＜TJ ＜150°C|-|-|20|kHz|
|VSEN|Voltage for Current<br>Sensing|Applied between NU, NV, NW- COM<br>(Including Surge-Voltage)|-4||4|V|
|PWIN(ON)|Minimun Input Pulse<br>Width|(2nd Note 7)|0.5|-|-|s|
|PWIN(OFF)|||0.5|-|-||



**2nd Notes:** 

7. This product might not make response if input pulse width is less than the recommanded value. 

**==> picture [307 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
Allowable Maximum Output Current<br>10<br>9 f =5kHz<br>SW<br>8<br>7<br>6<br>5<br>4<br>3 VDC=300V, VCC=VBS=15V<br>TJ ＜  150 ℃   ,  TC ≤  125 ℃ f =15kHz<br>2 M.I.=0.9, P.F.=0.8 SW<br>Sinusoidal PWM<br>1<br>0<br>0 10 20 30 40 50 60 70 80 90 100 110 120 130 140<br>Case Temperature, TC [ ℃ ]<br>]rms<br> [A<br>IOrms<br>**----- End of picture text -----**<br>


## **Figure 8. Allowable Maximum Output Current** 

**2nd Notes:** 

8. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition. 

9 

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## **Mechanical Characteristics and Ratings** 

|**Parameter**|**Conditions**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Device Flatness|See Figure 9||0|-|+ 120|m|
|Mounting Torque|Mounting Screw: M3<br>See Figure 10|Recommended 0.7 N • m|0.6|0.7|0.8|N • m|
|||Recommended 7.1 kg • cm|6.2|7.1|8.1|kg • cm|
|Weight|||-|11.00|-|g|



**Figure 9. Flatness Measurement Position** 

**==> picture [292 x 32] intentionally omitted <==**

**----- Start of picture text -----**<br>
Pre - Screwing : 1 → 2 i<br>2<br>Final Screwing : 2 → 1<br>**----- End of picture text -----**<br>


## **Figure 10. Mounting Screws Torque Order** 

## **2nd Notes:** 

9. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction. 

10. Avoid one side tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of the SPM[® ] 45 package to be damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating. 

10 

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## **Time Charts of Protective Function** 

**==> picture [348 x 198] intentionally omitted <==**

**----- Start of picture text -----**<br>
Input Signal<br>Protection<br>RESET SET RESET<br>Circuit State<br>UVCCR<br>a1 a6<br>Control UVCCD a3<br>Supply Voltage<br>a2<br>a4 a7<br>Output Current<br>a5<br>Fault Output Signal<br>**----- End of picture text -----**<br>


- a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when next input is applied. a2 : Normal operation: IGBT ON and carrying current. 

- a3 : Under-voltage detection (UVCCD). 

- a4 : IGBT OFF in spite of control input condition. 

- a5 : Fault output operation starts. 

- a6 : Under-voltage reset (UVCCR). 

a7 : Normal operation: IGBT ON and carrying current. 

**Figure 11. Under-Voltage Protection (Low-Side)** 

**==> picture [348 x 188] intentionally omitted <==**

**----- Start of picture text -----**<br>
Input Signal<br>Protection<br>RESET SET RESET<br>Circuit State<br>UVBSR<br>b1 b5<br>Control UVBSD b3<br>Supply Voltage b6<br>b2<br>b4<br>Output Current<br>High-level (no fault output)<br>Fault Output Signal<br>**----- End of picture text -----**<br>


- b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when next input is applied. b2 : Normal operation: IGBT ON and carrying current. 

- b3 : Under-voltage detection (UVBSD). 

- b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. 

- b5 : Under-voltage reset (UVBSR). 

- b6 : Normal operation: IGBT ON and carrying current. 

## **Figure 12. Under-Voltage Protection (High-Side)** 

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**==> picture [307 x 251] intentionally omitted <==**

**----- Start of picture text -----**<br>
Lower Arms<br>c6 c7<br>Control Input<br>Protection<br>Circuit State SET RESET<br>Internal IGBT c4<br>Gate - Emitter Voltage c3<br>c2<br>SC<br>c1<br>Output Current c8<br>SC Reference Voltage<br>Sensing Voltage<br>of Shunt Resistance<br>CR Circuit Time<br>Fault Output Signal c5 Constant Delay<br>**----- End of picture text -----**<br>


(with the external shunt resistance and CR connection) 

c1 : Normal operation: IGBT ON and carrying current. 

c2 : Short-circuit current detection (SC trigger). 

c3 : Hard IGBT gate interrupt. 

c4 : IGBT turns OFF. 

c5 : Input “LOW”: IGBT OFF state. 

c6 : Input “HIGH”: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON. 

c7 : IGBT OFF state. 

## **Figure 13. Short-Circuit Protection (Low-Side Operation Only)** 

## **Input/Output Interface Circuit** 

+5 V (for MCU or Control power) 

**==> picture [469 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
RPF = 10 kΩ SPM<br>IN(UH) , IN (VH) , IN(WH)<br>IN (UL) , IN (VL) , IN(WL)<br>MCU<br>VFO<br>COM<br>Figure 14. Recommended MCU I/O Interface Circuit<br>2nd Notes:<br>11. RC coupling at each input (parts shown dotted) might change depending on the PWM control scheme in the application and the wiring impedance of the application’s printed<br>circuit board. The input signal section of the Motion SPM [®]  45 product integrates a 5 k ( typ.) pull-down resistor. Therefore, when using an external filtering resistor, pay atten-<br>tion to the signal voltage drop at input terminal.<br>**----- End of picture text -----**<br>


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**==> picture [469 x 514] intentionally omitted <==**

**----- Start of picture text -----**<br>
HVIC<br>(26) VB(U) VB(U) P (3)<br>CBS CBSC (25) VS(U) VS(U)<br>Gating UH RS (20) IN(UH) IN(UH) OUT(UH)VS( U) U (4)<br>_ os ese<br>(24) VB(V) VB(V)<br>Gating VH RS CBS CBSC (19) IN(23) VS(V)(VH) IN(VH)VS(V) OUT(VH)<br>a l (22) VB(W) VB(W) VS( V) TS V (5) M<br>CBS CBSC (21) VS(W) VS(W)<br>M Gating WH RS +15 V (18) IN(17) VCC(H)(WH) IN(WH)VCC OUT(WH) CDCS VDC<br>C CPS CPS CPS CSP15 CSPC15 (15) COM COM VS( W) W (6)<br>U +5 V LVIC<br>(16) VCC(L) VCC<br>OUT(UL)<br>RS RPF CSPC05 CSP05 (11) VFO NU (7) RSU<br>Fault VFO<br>Gating WLGating ULGating VL CBPF CPF RRRSSS CSC (14) IN(13) IN(12) IN(UL)(VL)(WL) IN(UL)IN(VL)IN(WL)COM OUT(WL)OUT(VL) NV (8) RSV<br>CPS CPS CPS RF (10) CSC CSC NW (9) RSW<br>(1) VTH<br>RTH (2) RTH THERMISTOR<br>U-Phase Current<br>Input Signal for<br>V-Phase Current<br>Short-Circuit Protection<br>| Temp. Monitoring W-Phase Current<br>Figure 15. Typical Application Circuit<br>3rd Notes:<br>1) To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).<br>2) By virtue of integrating an application-specific type of HVIC inside the Motion SPM [[®]]  45 product, direct coupling to MCU terminals without any optocoupler or transformer isola-<br>tion is possible.<br>3) VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA (pleaseFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA (please output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA (pleaseFO up to 1 mA (please up to 1 mA (please<br>refer to Figure 14).<br>4) CSP15 of around seven times larger than bootstrap capacitor CBS is recommended.<br>5) Input signal is active-HIGH type. There is a 5 k resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded  for the prevention of<br>input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns (recommended RS = 100  Ω , CPS = 1 nF).<br>6) To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.<br>7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s.FCSC time constant in the range 1.5 ~ 2 s.CSC time constant in the range 1.5 ~ 2 s.SC time constant in the range 1.5 ~ 2 s. time constant in the range 1.5 ~ 2 s.s.s.<br>8) The connection between control GND line and power GND line which includes the NU, NV, NW must be connected to only one point. Please do not connect the control GNDU, NV, NW must be connected to only one point. Please do not connect the control GND, NV, NW must be connected to only one point. Please do not connect the control GNDV, NW must be connected to only one point. Please do not connect the control GND, NW must be connected to only one point. Please do not connect the control GNDW must be connected to only one point. Please do not connect the control GND must be connected to only one point. Please do not connect the control GND<br>to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.<br>9) Each capacitor should be mounted as close to the pins of the Motion SPM 45 product as possible.<br>10) To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short  as possible. The use of a high-frequency non-inductive<br>capacitor of around 0.1 ~ 0.22 F between the P and GND pins is recommended.<br>**----- End of picture text -----**<br>


**3rd Notes:** 

- 1) To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm). 

- 2) By virtue of integrating an application-specific type of HVIC inside the Motion SPM[[®]] 45 product, direct coupling to MCU terminals without any optocoupler or transformer isolation is possible. 

- 3) VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA (pleaseFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA (please output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA (pleaseFO up to 1 mA (please up to 1 mA (please refer to Figure 14). 

- 7) In the short-circuit protection circuit, please select the RFCSC time constant in the range 1.5 ~ 2 s.FCSC time constant in the range 1.5 ~ 2 s.CSC time constant in the range 1.5 ~ 2 s.SC time constant in the range 1.5 ~ 2 s. time constant in the range 1.5 ~ 2 s.s.s. 

8) The connection between control GND line and power GND line which includes the NU, NV, NW must be connected to only one point. Please do not connect the control GNDU, NV, NW must be connected to only one point. Please do not connect the control GND, NV, NW must be connected to only one point. Please do not connect the control GNDV, NW must be connected to only one point. Please do not connect the control GND, NW must be connected to only one point. Please do not connect the control GNDW must be connected to only one point. Please do not connect the control GND must be connected to only one point. Please do not connect the control GND to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible. 

- 11) Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there  should be sufficient distance between the MCU and the relays. 

- 12) The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals (recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω ). 

- 13) Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 F R-category ceramic capacitors with good temperature and frequency characteristics in CBSC. 

- 14) For the detailed information, please refer to the AN-9070, AN-9071, AN-9072, RD-344, and RD-345. 

13 

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## **Package Outline Drawing (FNA41060)** 

**SPMAA−A26 / 26LD, PDD STD, CERAMIC TYPE, STANDARD DUAL FORM** CASE MODFA ISSUE O 

## **Package Outline Drawing (FNA41060B2, Long Terminal Type)** 

## **SPMAA−C26 / 26LD, PDD STD CERAMIC TYPE, LONG LEAD DUAL FORM TYPE** 

CASE MODFC ISSUE O 

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