FNA23512A

## **FNA23512A** 

## **1200 V Motion SPM[®] 2 Series** 

## **Features** 

- UL Certified No. E209204 (UL1557) 

- 1200 V - 35 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections 

- Low-Loss, Short-Circuit-Rated IGBTs 

- Very Low Thermal Resistance Using Al2O3 DBC Substrate 

- Built-In Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout 

- Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing 

## **General Description** 

The FNA23512A is a Motion SPM[®] 2 module providing a fully-featured, high-performance inverter output stage for AC induction, BLDC, and PMSM motors. These modules integrate optimized gate drive of the built-in IGBTs to minimize EMI and losses, while also providing multiple on-module protection features: under-voltage lockouts, over-current shutdown, temperature sensing, and fault reporting. The built-in, high-speed HVIC  requires only a single supply voltage and translates the incoming logiclevel gate inputs to high-voltage, high-current drive signals to properly drive the module's internal IGBTs. Separate negative IGBT terminals are available for each phase to support the widest variety of control algorithms. 

- Single-Grounded Power Supply Supported 

- Built-In NTC Thermistor for Temperature Monitoring and Management 

- Adjustable Over-Current Protection via Integrated Sense-IGBTs 

- Isolation Rating of 2500 Vrms / 1 min. 

## **Applications** 

- Motion Control - Industrial Motor (AC 400 V Class) 

## **Related Resources** 

- _AN-9075 - Users Guide for 1200V SPM[®] 2 Series_ 

- _AN-9076 - Mounting Guide for New SPM[®] 2 Package_ 

- _AN-9079 - Thermal Performance of 1200V Motion SPM[®] 2 Series by Mounting Torque_ 

**Figure 1. Package Overview** 

## **Package Marking and Ordering Information** 

|**Device**|**Device Marking**|**Package**|**Packing Type**|**Quantity**|
|---|---|---|---|---|
|FNA23512A|FNA23512A|SPMCA-A34|Rail|6|



©2014 SSemiconductor Components Industries, LLC. October-2017, Rev. 3 

Publication Order Number: FNA23512A/D 

## **Intergrated Power Functions** 

- 1200 V - 35 A IGBT inverter for three-phase DC / AC power conversion ( _refer to Figure 3_ ) 

## **Intergrated Drive, Protection, and System Control Functions** 

- For inverter high-side IGBTs: gate-drive circuit, high-voltage isolated high-speed level-shifting control circuit, Under-Voltage Lock-Out Protection (UVLO), Available bootstrap circuit example is given in Figures 5 and 15. 

- For inverter low-side IGBTs: gate-drive circuit, Short-Circuit Protection (SCP) control circuit, Under-Voltage Lock-Out Protection (UVLO) 

- Fault signaling: corresponding to UV (low-side supply) and SC faults 

- Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input 

## **Pin Configuration** 

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**----- Start of picture text -----**<br>
(34) VS(W)<br>Cc (33) VB(W)<br>(32) VBD(W)<br>(1) P a (31) VCC(WH)<br>= (30) IN(WH)<br>(29) VS(V)<br>1 (28) VB(V)<br>c<br>(2) W = (27) VBD(V)<br>(26) VCC(VH)<br>Cc (25) IN(VH)<br>(3) V (24) VS(U)<br>_ = (23) VB(U)<br>Cc<br>Case Temperature (TC)  (22) VBD(U)<br>Detecting Point CNL (21) VCC(UH)<br>(4) U = | = (20) COM(H)<br>=aEa = (19) IN(UH)<br>(18) RSC<br>(5) NW [| = (17) CSC<br>(6) NV =%= (16) CFOD<br>a== (15) VFO<br>(14) IN(WL)<br>(7) NU = ° =<br>(13) IN(VL)<br>(12) IN(UL)<br>(8) RTH (11) COM(L)<br>(9) VTH =| o| E (10) VCC(L)<br>**----- End of picture text -----**<br>


**Figure 2. Top View** 

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## **Pin Descriptions** 

|**Pin Number**|**Pin Name**|**Pin Description**||
|---|---|---|---|
|1|P|Positive DC-Link Input||
|2|W|Output for W Phase||
|3|V|Output for V Phase||
|4||||
||U|Output for U Phase||
|5|NW|Negative DC-Link Input for W Phase||
|6|NV|Negative DC-Link Input for V Phase||
|7|NU|Negative DC-Link Input for U Phase||
|8|RTH|Series Resistor for Thermistor (Temperature Detection)||
|9|VTH|Thermistor Bias Voltage||
|10|VCC(L)|Low-Side Bias Voltage for IC and IGBTs Driving||
|11|COM(L)|Low-Side Common Supply Ground||
|12|IN(UL)|Signal Input for Low-Side U Phase||
|13|IN(VL)|Signal Input for Low-Side V Phase||
|14|IN(WL)|Signal Input for Low-Side W Phase||
|15|VFO|Fault Output||
|16|CFOD|Capacitor for Fault Output Duration Selection||
|17|CSC|Capacitor (Low-Pass Filter) for Short-Circuit Current Detection Input||
|18|RSC|Resistor for Short-Circuit Current Detection||
|19|IN(UH)|Signal Input for High-Side U Phase||
|20|COM(H)|High-Side Common Supply Ground||
|21|VCC(UH)|High-Side Bias Voltage for U Phase IC||
|22|VBD(U)|Anode of Bootstrap Diode for U Phase High-Side Bootstrap Circuit||
|23|VB(U)|High-Side Bias Voltage for U Phase IGBT Driving||
|24|VS(U)|High-Side Bias Voltage Ground for U Phase IGBT Driving||
|25|IN(VH)|Signal Input for High-Side V Phase||
|26|VCC(VH)|High-Side Bias Voltage for V Phase IC||
|27|VBD(V)|Anode of Bootstrap Diode for V Phase High-Side Bootstrap Circuit||
|28|VB(V)|High-Side Bias Voltage for V Phase IGBT Driving||
|29|VS(V)|High-Side Bias Voltage Ground for V Phase IGBT Driving||
|30|IN(WH)|Signal Input for High-Side W Phase||
|31|VCC(WH)|High-Side Bias Voltage for W Phase IC||
|32|VBD(W)|Anode of Bootstrap Diode for W Phase High-Side Bootstrap Circuit||
|33|VB(W)|High-Side Bias Voltage for W Phase IGBT Driving||
|34|VS(W)|High-Side Bias Voltage Ground for W Phase IGBT Driving||



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## **Internal Equivalent Circuit and Input/Output Pins** 

## **Figure 3. Internal Block Diagram** 

## **Notes:** 

1. Inverter high-side is composed of three normal-IGBTs, freewheeling diodes, and one control IC for each IGBT. 

2. Inverter low-side is composed of three sense-IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions. 

3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals. 

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## **Absolute Maximum Ratings** (TJ = 25°C,  unless otherwise specified.) 

## **Inverter Part** 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VPN|Supply Voltage|Applied between P - NU, NV, NW|900|V|
|VPN(Surge)|Supply Voltage (Surge)|Applied between P - NU, NV, NW|1000|V|
|VCES|Collector - Emitter Voltage||1200|V|
|± IC|Each IGBT Collector Current|TC= 25°C, TJ £150°C (Note 4)|35|A|
|± ICP|Each IGBT Collector Current (Peak)|TC= 25°C, TJ £150°C, Under 1 ms Pulse<br>Width (Note 4)|70|A|
|PC|Collector Dissipation|TC= 25°C per One Chip (Note 4)|171|W|
|TJ|Operating Junction Temperature||-40 ~ 150|°C|



## **Control Part** 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VCC|Control Supply Voltage|Applied between VCC(H), VCC(L) - COM|20|V|
|VBS|High-Side Control Bias Voltage|Applied between VB(U)- VS(U), VB(V)- VS(V),<br>VB(W)- VS(W)|20|V|
|VIN|Input Signal Voltage|Applied between IN(UH), IN(VH), IN(WH),<br>IN(UL), IN(VL), IN(WL)- COM|-0.3 ~ VCC+0.3|V|
|VFO|Fault Output Supply Voltage|Applied between VFO- COM|-0.3 ~ VCC+0.3|V|
|IFO|Fault Output Current|Sink Current at VFOpin|2|mA|
|VSC|Current Sensing Input Voltage|Applied between CSC- COM|-0.3 ~ VCC+0.3|V|



## **Bootstrap Diode Part** 

|**Symbol**|**Parameter**|**Conditions**|**Rating**|**Unit**|
|---|---|---|---|---|
|VRRM|Maximum Repetitive Reverse Voltage||1200|V|
|IF|Forward Current|TC= 25°C, TJ £150°C (Note 4)|1.0|A|
|IFP|Forward Current (Peak)|TC= 25°C, TJ £150°C, Under 1 ms Pulse<br>Width (Note 4)|2.0|A|
|TJ|Operating Junction Temperature||-40 ~ 150|°C|



## **Total System** 

|**Symbol**|**Parameter**|**Conditions**|**Conditions**|**Rating**|**Rating**|**Rating**|**Rating**|**Unit**|
|---|---|---|---|---|---|---|---|---|
|VPN(PROT)|Self-Protection Supply Voltage Limit<br>(Short-Circuit Protection Capability)|VCC= VBS= 13.5 ~ 16.5 V, TJ= 150°C,<br>VCES< 1200 V,  Non-Repetitive, < 2ms||800||||V|
|TC|Module Case Operation Temperature|_See Figure 2_||-40 ~ 125||||°C|
|TSTG|Storage Temperature|||-40 ~ 125||||°C|
|VISO|Isolation Voltage|60 Hz, Sinusoidal, AC 1 Minute, Connection<br>Pins to Heat Sink Plate||2500||||Vrms|
|**Thermal Resistance**|||||||||
|**Symbol**|**Parameter**|**Conditions**|**Min.**||**Typ.**|**Max.**|**Unit**||
|Rth(j-c)Q|Junction-to-Case Thermal Resistance<br>(Note 5)|Inverter IGBT Part (per 1 / 6 Module)|-||-|0.73|°C / W||
|Rth(j-c)F||Inverter FWD Part (per 1 / 6 Module)|-||-|1.26|°C / W||



**Notes:** 

4.  These values had been made an acquisition by the calculation considered to design factor. 

5.  For the measurement point of case temperature (TC), _please refer to Figure 2_ . 

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**Electrical Characteristics** (TJ = 25°C, unless otherwise specified.) 

## **Inverter Part** 

|**Inverter Part**|**Inverter Part**|**Inverter Part**|**Inverter Part**||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**Symbol**||||**Parameter**||||**Conditions**|||**Min.**|**Typ.**|**Max.**|**Unit**|
|VCE(SAT)||||Collector - Emitter Saturation<br>Voltage||||VCC= VBS= 15 V<br>VIN= 5 V|IC= 35 A, TJ= 25°C||-|1.90|2.50|V|
||V|||FWDi Fd Vlt||||V= 0 V|I= 35 A T= 25°C|||200|260|V|
||F|||orwar oage||||IN|F,J||-|.|.||
|HS|tON|||Switching Times||||VPN= 600 V, VCC= 15 V, IC= 35 A<br>TJ= 25°C<br>VIN= 0 V«5 V, Inductive Load<br>_See Figure 5_<br>(Note 6)|||0.70|1.20|1.80|ms|
||tC(ON)||||||||||-|0.25|0.65|ms|
||tOFF||||||||||-|1.20|1.80|ms|
||tC(OFF)||||||||||-|0.15|0.55|ms|
||trr||||||||||-|0.20|-|ms|
|LS|tON|||||||VPN= 600 V, VCC= 15 V, IC= 35 A<br>TJ= 25°C<br>VIN= 0 V«5 V, Inductive Load<br>_See Figure 5_<br>(Note 6)|||0.50|1.00|1.60|ms|
||tC(ON)||||||||||-|0.30|0.70|ms|
||tOFF||||||||||-|1.40|2.00|ms|
||tC(OFF)||||||||||-|0.20|0.60|ms|
||trr||||||||||-|0.25|-|ms|
||ICES|||Collector - Emitter Leakage<br>Current||||VCE= VCES|||-|-|5|mA|
|**Note:**<br>6.   tONand tOFFinclude the propagation delay of the internal drive IC. tC(ON)and tC(OFF)are the switching times of IGBT under the given gate-driving condition internally. For the<br>detailed information,_please see Figure 4_.<br>**Figure 4. Switching Time Definition**<br>VCE<br>IC<br>VIN<br>tON<br>tC(ON)<br>VIN(ON)<br>10% IC<br>10% VCE<br>90% IC<br>100% IC<br>trr<br>100% IC<br>VCE<br>IC<br>VIN<br>tOFF<br>tC(OFF)<br>VIN(OFF)<br>10% VCE<br>10% IC<br>**(a) turn-on**<br>**(b) turn-off**||||||||ve IC. tC(ON)and tC(OFF)are the switching times of IGBT unde|||||||
||||VCE<br>100% IC<br>trr<br>100%|||||||IC|||||
|||||||||||VIN|||||
||||||||||||||||
||||||||||||||||
||||||||||||||||
|||**Figure 4. Switching Time Definition**|||||||||||||



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**----- Start of picture text -----**<br>
1 One-Leg Diagram of SPM 2 IC A FL<br>RBS fT . P<br>CBS aeLy{}Oa VCOMINC C OUVV T  BS | LS Switching o°<br>HS Switching VPN<br>{fT ———| U,V,W<br>V<br>LS Switching IN Inductor 600V<br>O_ O Lc2D VC C<br>5 V VIN VCC 4.7 kΩ —T CVFODFO O UT HS Switching °<br>0 V Aun Z-t_| CSC<br>V a COM NU,V,W<br>15 V<br>V RSC<br>C) 5 V J<br>ae<br>**----- End of picture text -----**<br>


## **Figure 5. Example Circuit for Switching Test** 

**Figure 6. Switching Loss Characteristics (Typical)** 

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**----- Start of picture text -----**<br>
R-T Curve<br>600<br>550 R-T Curve in 50 ℃  ~ 125 ℃<br>500 20<br>450 16<br>400<br>12<br>350<br>8<br>300<br>250 4<br>200 0<br>50 60 70 80 90 100 110 120<br>150 Temperature [ ℃ ]<br>100<br>50<br>0<br>-20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120<br>Temperature TTH[ ℃ ]<br>] W<br>] W<br>Resistance[k<br>Resistance[k<br>**----- End of picture text -----**<br>


**Figure 7. R-T Curve of Built-in Thermistor** 

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## **Bootstrap Diode Part** 

|**Symbol**|**Parameter**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward Voltage|IF= 1.0 A, TJ= 25°C|-|2.2|-|V|
|trr|Reverse-Recovery Time|IF= 1.0 A, dIF / dt = 50 A / ms, TJ= 25°C|-|80|-|ns|



|**Control Part**|**Control Part**|||||||
|---|---|---|---|---|---|---|---|
|||||||||
|**Symbol**|**Parameter**|**Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|IQCCH|Quiescent VCCSupply<br>Current|VCC(UH,VH,WH)= 15 V,<br>IN(UH,VH,WH)= 0 V|VCC(UH)- COM(H),<br>VCC(VH)- COM(H),<br>VCC(WH)- COM(H)|-|-|0.15|mA|
|IQCCL||VCC(L)= 15 V,  IN(UL,VL, WL)= 0 V|VCC(L)- COM(L)|-|-|5.00|mA|
|IPCCH|Operating VCCSupply<br>Current|VCC(UH,VH,WH)= 15 V, fPWM= 20<br>kHz, Duty = 50%, Applied to one<br>PWM Signal Input  for High-Side|VCC(UH)- COM(H),<br>VCC(VH)- COM(H),<br>VCC(WH)- COM(H)|-|-|0.30|mA|
|IPCCL||VCC(L)= 15V, fPWM= 20 kHz, Duty =<br>50%, Applied to one PWM Signal<br>Input  for Low-Side|VCC(L)- COM(L)|-|-|15.5|mA|
|IQBS|Quiescent VBSSupply<br>Current|VBS= 15 V, IN(UH, VH, WH)= 0 V|VB(U)- VS(U),<br>VB(V)- VS(V),<br>VB(W)- VS(W)|-|-|0.30|mA|
|IPBS|Operating VBSSupply<br>Current|VCC= VBS= 15 V, fPWM= 20 kHz,<br>Duty = 50%, Applied to one PWM<br>Signal Input for High-Side|VB(U)- VS(U),<br>VB(V)- VS(V),<br>VB(W)- VS(W)|-|-|12.0|mA|
|VFOH|Fault Output Voltage|VCC= 15 V, VSC= 0 V, VFOCircuit: 4.7 kWto 5 V Pull-up||4.5|-|-|V|
|VFOL||VCC= 15 V, VSC= 1 V, VFOCircuit: 4.7 kWto 5 V Pull-up||-|-|0.5|V|
|ISEN|Sensing<br>Current<br>of<br>Each Sense IGBT|VCC= 15 V, VIN= 5 V, RSC= 0 W,No<br>Connection of Shunt Resistor at<br>NU,V,WTerminal|IC = 35 A|-|36|-|mA|
|VSC(ref)|Short Circuit Trip Level|VCC= 15 V (Note 7)|CSC- COM(L)|0.43|0.50|0.57|V|
|ISC|Short Circuit Current<br>Level for Trip|RSC= 16W(± 1%),No Connection of Shunt Resistor at<br>NU,V,WTerminal (Note 7)||-|70|-|A|
|UVCCD|Supply Circuit Under-<br>Voltage Protection|Detection Level||10.3|-|12.8|V|
|UVCCR||Reset Level||10.8|-|13.3|V|
|UVBSD||Detection Level||9.5|-|12.0|V|
|UVBSR||Reset Level||10.0|-|12.5|V|
|tFOD|Fault-Out Pulse Width|CFOD= Open|(Note 8)|50|-|-|ms|
|||CFOD= 2.2 nF||1.7|-|-|ms|
|VIN(ON)|ON Threshold Voltage|Applied between IN(UH, VH, WH)- COM(H), IN(UL, VL, WL)-<br>COM(L)||-|-|2.6|V|
|VIN(OFF)|OFF Threshold Voltage|||0.8|-|-|V|
|RTH|Resistance of<br>Thermistor|at TTH = 25°C|_See Figure 7_<br>(Note 9)|-|47|-|kW|
|||at TTH = 100°C||-|2.9|-|kW|



## **Notes:** 

7. Short-circuit current protection functions only at the low-sides because the sense current is divided from main current at low-side IGBTs. Inserting the shunt resistor for monitoring the phase current at NU, NV, NW terminal, the trip level of the short-circuit current is changed. 

8. The fault-out pulse width tFOD depends on the capacitance value of CFOD according to the following approximate equation : tFOD = 0.8 x 10[6] x CFOD [s]. 

9. TTH is the temperature of thermistor itself. To know case temperature (TC), conduct experiments considering the application. 

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## **Recommended Operating Conditions** 

|**Symbol**|**Parameter**|**Conditions**|**Value**|**Value**|**Value**|**Unit**|
|---|---|---|---|---|---|---|
||||**Min.**|**Typ.**|**Max.**||
|VPN<br>~~ee~~|Supply Voltage<br>~~ee~~|Applied between P - NU, NV, NW<br>~~ee~~|300<br>~~ee~~|600<br>~~eee~~|800<br>~~eee~~|V<br>~~eee~~|
|VCC<br>~~ee~~|Control Supply Voltage<br>~~ee~~|Applied between VCC(UH, VH, WH)- COM(H), VCC(L)-<br>COM(L)<br>~~ee~~|14.0<br>~~ee~~|15.0<br>~~eee~~|16.5<br>~~eee~~|V<br>~~eee~~|
|VBS<br>~~ee~~|High-Side Bias Voltage<br>~~ee~~|Applied between VB(U)- VS(U), VB(V)- VS(V), VB(W)-<br>VS(W)<br>~~ee ~~|13.0<br> ~~ee ~~|15.0<br> ~~eee~~|18.5<br>~~eee~~|V<br>~~eee~~|
|dVCC/ dt,<br>dVBS/ dt|Control Supply Variation||-1|-|1|V /ms|
|tdead|Blanking Time for<br>Preventing Arm - Short|For Each Input Signal|2.0|-|-|ms|
|fPWM<br>~~e~~|PWM Input Signal<br>~~ee~~|-40°C£TC £125°C, -40°C£TJ £150°C<br>~~ee~~|-<br>~~ee~~|-<br>~~ee~~|20<br>~~ee~~|kHz<br>~~eee~~|
|VSEN<br>~~e~~|Voltage for Current<br>Sensing<br>~~ee~~|Applied between NU, NV, NW- COM(H, L)<br>(Including Surge Voltage)<br>~~ee~~|-5<br>~~ee~~|~~ee~~|5<br>~~ee~~|V<br>~~eee~~|
|PWIN(ON)<br>~~e~~<br>~~a~~|Minimun Input Pulse<br>Width<br>~~ee~~|VCC= VBS= 15 V, IC £70 A, Wiring Inductance<br>between NU, V, Wand DC Link N < 10nH (Note 10)<br>~~ee ~~|2.0<br> ~~ee ~~|-<br> ~~ee~~|-<br>~~ee~~|ms<br>~~eee~~|
|PWIN(OFF)<br>~~|~~|||2.0<br>~~P|~~|-<br>~~P|~~|-<br>~~P|~~||
|TJ<br>~~|~~<br>~~De~~|Junction Temperature<br>~~De~~|~~De~~|-40<br>~~P|~~<br>~~De~~|-<br>~~P|~~<br>~~De~~|150<br>~~P|~~<br>~~De~~|°C<br>~~De~~|



## **Figure 8. Allowable Maximum Output Current** 

## **Note:** 

11. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition. 

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## **Mechanical Characteristics and Ratings** 

|**Parameter**|**Conditions**|**Conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|Device Flatness|_See Figure 9_||0|-|+200|mm|
|Mounting Torque|Mounting Screw: M4<br>_See Figure 10_|Recommended 1.0 N • m|0.9|1.0|1.5|N • m|
|||Recommended 10.1 kg • cm|9.1|10.1|15.1|kg • cm|
|Terminal Pulling Strength|Load 19.6 N||10|-|-|s|
|Terminal Bending Strength|Load 9.8 N, 90 degrees Bend||2|-|-|times|
|Weight|||-|50|-|g|



**(＋)** 

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**----- Start of picture text -----**<br>
(＋)<br>**----- End of picture text -----**<br>


## **Figure 9. Flatness Measurement Position** 

**2** 

**Pre - Screwing : 1     2 Final Screwing : 2     1** 

## **Figure 10. Mounting Screws Torque Order** 

## **Notes:** 

12. Do not over torque when mounting screws. Too much mounting torque may cause DBC cracks, as well as bolts and Al heat-sink destruction. 

13. Avoid one-sided tightening stress. Figure 10 shows the recommended torque order for the mounting screws. Uneven mounting can cause the DBC substrate of package to be damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating. 

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## **Time Charts of SPMs Protective Function** 

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**----- Start of picture text -----**<br>
Input Signal<br>Protection<br>RESET SET RESET<br>Circuit State<br>UVCCR<br>a1 a6<br>Control  UVCCD a3<br>Supply Voltage<br>a2<br>a7<br>a4<br>Output Current<br>a5<br>Fault Output Signal<br>**----- End of picture text -----**<br>


## **Figure 11. Under-Voltage Protection (Low-Side)** 

- a1 : Control supply voltage rises: after the voltage rises UVCCR, the circuits start to operate when the next input is applied. a2 : Normal operation: IGBT ON and carrying current. 

- a3 : Under-voltage detection (UVCCD). 

- a4 : IGBT OFF in spite of control input condition. 

- a5 : Fault output operation starts with a fixed pulse width according to the condition of the external capacitor CFOD. 

- a6 : Under-voltage reset (UVCCR). 

a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH. 

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Input Signal<br>Protection<br>RESET SET RESET<br>Circuit State<br>UVBSR<br>b1 b5<br>Control  UVBSD b3<br>Supply Voltage b6<br>b2<br>b4<br>Output Current<br>High-level (no fault output )<br>**----- End of picture text -----**<br>


## Fault Output Signal 

## **Figure 12. Under-Voltage Protection (High-Side)** 

- b1 : Control supply voltage rises: after the voltage reaches UVBSR, the circuits start to operate when the next input is applied. 

- b2 : Normal operation: IGBT ON and carrying current. 

- b3 : Under-voltage detection (UVBSD). 

- b4 : IGBT OFF in spite of control input condition, but there is no fault output signal. 

- b5 : Under-voltage reset (UVBSR). 

- b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH. 

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**----- Start of picture text -----**<br>
Lower Arms<br>Control Input c6 c7<br>Protection<br>Circuit state SET RESET<br>Internal IGBT c4<br>Gate-Emitter Voltage c3<br>c2 Internal delay<br>at protection circuit<br>SC current trip level<br>c8<br>c1<br>Output Current<br>Sensing Voltage SC reference voltage<br>of Sense Resistor<br>RC filter circuit<br>Fault Output Signal c5 time constant<br>delay<br>**----- End of picture text -----**<br>


## **Figure 13. Short-Circuit Current Protection (Low-Side Operation only)** 

(with the external sense resistance and RC filter connection) 

- c1 : Normal operation: IGBT ON and carrying current. 

- c2 : Short-circuit current detection (SC trigger). 

- c3 : All low-side IGBTs gate are hard interrupted. 

- c4 : All low-side IGBTs turn OFF. 

- c5 : Fault output operation starts with a fixed pulse width according to the condition of the external capacitor CFOD. 

- c6 : Input HIGH: IGBT ON state, but during the active period of fault output, the IGBT doesn’t turn ON. 

- c7 : Fault output operation finishes, but IGBT doesn’t turn on until triggering the next signal from LOW to HIGH. 

- c8 : Normal operation: IGBT ON and carrying current. 

## **Input/Output Interface Circuit** 

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+5V (MCU or control power)<br>4.7 kΩ SPM<br>IN(UH), IN(VH), IN(WH)<br>IN(UL) , IN(VL) , IN(WL)<br>MCU VFO<br>COM<br>**----- End of picture text -----**<br>


## **Figure 14. Recommended MCU I/O Interface Circuit** 

## **Note:** 

14. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board. The input signal section of the Motion SPM 2 product integrates 5 kW (typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the signal voltage drop at input terminal. 

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**==> picture [469 x 369] intentionally omitted <==**

**----- Start of picture text -----**<br>
P (1)<br>Gating WH R1 (30) IN(WH) IN<br>R2 C4 (31) V(32) V BD(W)CC(WH) VCOMC C HVIC OUT<br>C3 C4 (34) V(33) VS(W)B(W) VB VS W (2)<br>Gating VH R1 R2 C4 (26) V((27) V25) INCC(VH ) BD(V )(VH ) INVCOMC C HVIC OUT<br>(28) VB(V) VB VS<br>C3 C4 (29) VS(V) V (3) M<br>M Gating UH R1 C1 C1 C1 R2 C4 (20) COM(22) V((1921)) IN VBD(U )CC(UH(UH)(H)) INVCOMC C HVIC OUT C7 VDC<br>C C3 C4 (23) V(24) VB(U)S(U) VB VS U (4)<br>U 5V line<br>Fault R1 R3 C5 (16) C FOD CFOD OUT<br>C1 C1 (15) V FO VFO NW (5) R4 A<br>Gating WL R1 (14) IN(WL) IN<br>Gating VL R1 (13) IN(VL) IN LVIC OUT<br>Gating UL R1 (12) IN(UL) IN NV (6) R4 E<br>C1 C1 C1 15V line  (10) VCC(L) VC C ResistorShunt  Power<br>C2 C4 (11) COM(L) COM GND Line<br>OUT<br>5V line  (9) VTH<br>(8) RTH CSC NU (7) R 4<br>Temp.<br>Monitoring R7 Thermistor RSC (18) R 5<br>(17) CSC Sense<br>Resistor<br>D<br>R6 B Control<br>C6 W-Phase Current GND Line<br>V-Phase Current<br>C U-Phase Current<br>**----- End of picture text -----**<br>


## **Figure 15. Typical Application Circuit** 

**Notes:** 

15. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm). 

16. VFO output is an open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 2 mA. _Please refer to Figure 14_ . 

17. Fault out pulse width can be adjust by capacitor C5 connected to the CFOD terminal. 

18. Input signal is active-HIGH type. There is a 5 kW resistor inside the IC to pull-down each input signal line to GND. RC coupling circuits should be adopted  for the prevention of input signal oscillation. R1C1 time constant should be selected in the range 50 ~ 150 ns (recommended R1 = 100 Ω , C1 = 1 nF). 

19. Each wiring pattern inductance of point A should be minimized (recommend less than 10 nH). Use the shunt resistor R4 of surface mounted (SMD) type to reduce wiring inductance. To prevent malfunction, wiring of point E should be connected to the terminal of the shunt resistor R4 as close as possible. 

20. To insert the shunt resistor to measure each phase current at NU, NV, NW terminal, it makes to change the trip level ISC about the short-ciruit current. 

21. To prevent errors of the protection function, the wiring of points B, C, and D should be as short as possible. The wiring of B between CSC filter and RSC terminal should be divided at the point that is close to the terminal of sense resistor R5. 

22. For stable protection function, use the sense resistor R5 with resistance variation within 1% and low inductance value. 

23. In the short-circuit protection circuit, select the R6C6 time constant in the range 1.0 ~ 1.5 ms. R6 should be selected with a minimum of 10 times larger resistance than sense resistor R5. Do enough evaluaiton on the real system because short-circuit protection time may vary wiring pattern layout and value of the R6C6 time constant. 

24. Each capacitor should be mounted as close to the pins of the Motion SPM[®] 2 product as possible. 

25. To prevent surge destruction, the wiring between the smoothing capacitor C7 and the P & GND pins should be as short  as possible. The use of a high-frequency noninductive capacitor of around 0.1 ~ 0.22 mF between the P & GND pins is recommended. 

26. Relays are used in most systems of electrical equipments in industrial application. In these cases, there  should be sufficient distance between the MCU and the relays. 

27. The Zener diode or transient voltage suppressor should be adapted for the protection of ICs from the surge destruction between each pair of control supply terminals (recommanded Zener diode is 22 V / 1 W, which has the lower Zener impedance characteristic than about 15 Ω ). 

28. C2 of around seven times larger than bootstrap capacitor C3 is recommended. 

29. Please choose the electrolytic capacitor with good temperature characteristic in C3. Choose 0.1 ~ 0.2 mF R-category ceramic capacitors with good temperature and frequency characteristics in C4. 

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