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FMV30N60S1
Power MOSFET, N Channel, 600 V, 30 A, 0.125 ohm, TO-220F, Through Hole
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- Manufacturer: FUJI ELECTRIC
- Product type: Single MOSFETs
- Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.106ohm; Rds(on) Test Voltag; Available until stocks are exhausted
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Qualification: -
- Power Dissipation: 90W
- Transistor Mounting: Through Hole
- Rds(on) Test Voltage: 10V
- Transistor Case Style: TO-220F
- Drain Source Voltage Vds: 600V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 30A
- Drain Source On State Resistance: 0.125ohm
- Gate Source Threshold Voltage Max: 3V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 4.66 € |
| Current stock | 50+ |
| Lead time | 7 days |
Datasheet
## **FMV30N60S1** **http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET** ## **Super J-MOS series** ## **N-Channel enhancement mode power MOSFET** ## **Outline Drawings [mm]** ## **Features** ## **Equivalent circuit schematic** **==> picture [295 x 120] intentionally omitted <==** **----- Start of picture text -----**<br> TO-220F(SLS)<br>②Drain<br>①<br>①②③ Gate<br>③Source<br>Connection<br>1 Gate<br>2 Drain<br>3 Source DIMENSIONS ARE IN MILLIMETERS.<br>**----- End of picture text -----**<br> Pb-free lead terminal RoHS compliant ## **Applications** For switching ## **Absolute Maximum Ratings at TC=25°C (unless otherwise specified)** **==> picture [526 x 212] intentionally omitted <==** **----- Start of picture text -----**<br> Description Symbol Characteristics Unit Remarks<br>VDS 600 V<br>Drain-Source Voltage<br>VDSX 600 V VGS=-30V<br>±30 A Tc=25°C Note*1<br>Continuous Drain Current ID<br>±19 A Tc=100°C Note*1<br>Pulsed Drain Current IDP ±90 A<br>Gate-Source Voltage VGS ±30 V<br>Repetitive and Non-Repetitive Maximum Avalanche Current IAR 6.6 A Note *2<br>Non-Repetitive Maximum Avalanche Energy EAS 849.2 mJ Note *3<br>Maximum Drain-Source dV/dt dVDS/dt 50 kV/μs VDS≤ 600V<br>Peak Diode Recovery dV/dt dV/dt 12 kV/μs Note *4<br>Peak Diode Recovery -di/dt -di/dt 100 A/μs Note *5<br>2.16 Ta=25°C<br>Maximum Power Dissipation PD W<br>90 Tc=25°C<br>Tch 150 °C<br>Operating and Storage Temperature range<br>Tstg -55 to +150 °C<br>Isolation Voltage Viso 2 kVrms t=60sec,f=60Hz<br>**----- End of picture text -----**<br> Note *1 : Limited by maximum channel temperature. Note *2 : Tch≤150°C, See Fig.1 and Fig.2 Note *3 : Starting Tch=25°C, IAS=4A, L=97.3mH, VDD=60V, RG=50Ω, See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. Note *4 : IF≤-ID, -di/dt=100A/μs, VDD≤400V, Tch≤150°C. Note *5 : IF≤-ID, dV/dt=12kV/μs, VDD≤400V, Tch≤150°C. ## **Electrical Characteristics at TC=25°C (unless otherwise specified)** ## **• Static Ratings** **==> picture [526 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> Description Symbol Conditions min. typ. max. Unit<br>Drain-Source Breakdown Voltage BVDSS VIDGS=250μA=0V 600 - - V<br>Gate Threshold Voltage VGS(th) VIDDS=250μA=VGS 2.5 3.0 3.5 V<br>VDS=600V Tch=25°C - - 25<br>VGS=0V<br>Zero Gate Voltage Drain Current IDSS μA<br>VDS=480V Tch=125°C - - 250<br>VGS=0V<br>Gate-Source Leakage Current IGSS VVGSDS=0V= ±30V - 10 100 nA<br>Drain-Source On-State Resistance RDS(on) VIDGS=15A=10V - 0.106 0.125 Ω<br>Gate resistance RG f=1MHz, open drain - 3.2 - Ω<br>**----- End of picture text -----**<br> 07947a OCTOBER 2015 1 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ ## **• Dynamic Ratings** **==> picture [527 x 236] intentionally omitted <==** **----- Start of picture text -----**<br> Description Symbol Conditions min. typ. max. Unit<br>Forward Transconductance gfs VIDDS=15A=25V 13 26 - S<br>Input Capacitance Ciss VDS=10V - 2200 -<br>Output Capacitance Coss VGS=0V - 4670 -<br>Reverse Transfer Capacitance Crss f=1MHz - 430 -<br>Effective output capacitance, energy related (Note *6) Co(er) VVGSDS=0…480V=0V - 127 - pF<br>VGS=0V<br>Effective output capacitance, time related (Note *7) Co(tr) ID=constantVDS=0…480V - 450 -<br>td(on) - 31 -<br>Turn-On Time tr VDD=400V, VGS=10V - 57 -<br>ID=15A, RG=13Ω ns<br>Turn-Off Time td(off) See Fig.3 and Fig.4 - 136 -<br>tf - 17 -<br>Total Gate Charge QG - 73 -<br>Gate-Source Charge QGS VDD=480V, ID=30A - 18 -<br>VGS=10V nC<br>Gate-Drain Charge QGD See Fig.5 - 25 -<br>Drain-Source crossover Charge QSW - 11.5 -<br>**----- End of picture text -----**<br> Note *6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS. Note *7 : Co(tr) is a fixed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS. ## **• Reverse Diode** **==> picture [527 x 141] intentionally omitted <==** **----- Start of picture text -----**<br> Description Symbol Conditions min. typ. max. Unit<br>Avalanche Capability IAV L=21.7mH, Tch=25°C 6.6 - - A<br>See Fig.1 and Fig.2<br>Diode Forward On-Voltage VSD ITF=30A, Vch=25°C GS=0V - 0.9 1.35 V<br>Reverse Recovery Time trr - 430 - ns<br>IF=30A, VGS=0V<br>VDD=400V<br>Reverse Recovery Charge Qrr -di/dt=100A/μs - 8.6 - μC<br>Tch=25°C<br>Peak Reverse Recovery Current Irp See Fig.6 - 38 - A<br>**----- End of picture text -----**<br> ## **Thermal Characteristics** **==> picture [527 x 46] intentionally omitted <==** **----- Start of picture text -----**<br> Description Symbol min. typ. max. Unit<br>Channel to Case Rth(ch-c) - - 1.39 °C/W<br>Channel to Ambient Rth(ch-a) - - 58 °C/W<br>**----- End of picture text -----**<br> 2 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ **==> picture [472 x 245] intentionally omitted <==** **----- Start of picture text -----**<br> Allowable Power Dissipation Safe Operating Area<br>100 PD=f(Tc) ID=f(VDS):Duty=0(Single pulse),Tc=25°C<br>90 102 t=<br>1µs<br>80<br>10µ s<br>70 101<br>100 µs<br>60<br>50<br>100<br>40<br>1m s<br>30<br>Power loss waveform :<br>20 10-1 Square waveform<br>PD<br>10<br>t<br>0 10-2<br>0 25 50 75 100 125 150<br>10-1 100 101 102 103<br>Tc [°C] VDS [V]<br> [W]<br>D<br>P [A]<br>ID<br>**----- End of picture text -----**<br> Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=25°C Typical Output Characteristics ID=f(VDS):80µs pulse test,Tch=150°C **==> picture [468 x 464] intentionally omitted <==** **----- Start of picture text -----**<br> 100 60<br>20V<br>10V 20V<br>10V<br>50<br>80 8V<br>8V<br>7V 6V<br>40<br>60 6.5V<br>5.5V<br>30<br>6V<br>40<br>5V<br>20<br>5.5V<br>20 10 V GS =4.5V<br>5V<br>0 V GS =4.5V 0<br>0 5 10 15 20 25 0 5 10 15 20 25<br>VDS [V] VDS [V]<br>Typical Drain-Source on-state Resistance Typical Drain-Source on-state Resistance<br>RDS(on)=f(ID):80µs pulse test,Tch=25°C RDS(on)=f(ID):80µs pulse test,Tch=150°C<br>0.50 1.0<br>5V 5.5V 6V 4.5V 5V<br>0.45 0.9<br>0.40 0.8 5.5V<br>0.35 7V 0.7<br>0.30 8V 10V 0.6 6V<br>8V<br>10V<br>0.25 0.5<br>VGS=20V<br>0.20 0.4<br>VGS=20V<br>0.15 0.3<br>0.10 0.2<br>0.05 0.1<br>0.00 0.0<br>0 20 40 60 80 100 0 10 20 30 40 50 60<br>ID [A] ID [A]<br> [A] [A]<br>ID ID<br>(on) [ Ω ] (on) [ Ω ]<br>DS DS<br>R R<br>**----- End of picture text -----**<br> 3 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ **==> picture [470 x 738] intentionally omitted <==** **----- Start of picture text -----**<br> Drain-Source Breakdown Voltage Drain-Source On-state Resistance<br>BVDSS=f(Tch):ID=10mA,VGS=0V RDS(on)=f(Tch):ID=15A,VGS=10V<br>700 0.40<br>This curve is not a guaranteed performance and is a reference value.<br>680<br>0.35<br>660<br>0.30<br>640<br>0.25<br>620<br>600 0.20<br>max.<br>580<br>0.15<br>560<br>typ.<br>0.10<br>540<br>0.05<br>520<br>500 0.00<br>-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150<br>Tch [°C] Tch [°C]<br>Gate Threshold Voltage vs. Tch Typical Transfer Characteristic<br>VGS(th)=f(Tch):VDS=VGS,ID=250µA ID=f(VGS):80µs pulse test,VDS=25V<br>6 100<br>5<br>10<br>4<br>1<br>150℃ Tch=25℃<br>3<br>typ. 0.1<br>2<br>0.01<br>1<br>0 1E-3<br>-50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10<br>Tch [°C] VGS[V]<br>Typical Transconductance Typical Forward Characteristics of Reverse Diode<br>gfs=f(ID):80µs pulse test,VDS=25V IF=f(VSD):80µs pulse test<br>100 100<br>Tch=25℃<br>10 10<br>150℃<br>150℃ Tch=25℃<br>1 1<br>0.1 0.1<br>0.1 1 10 100 0.0 0.5 1.0 1.5 2.0<br>ID [A] VSD [V]<br> [V]<br>BVDSS (on) [ Ω ] DS<br>R<br>(th) [V]GS [A]ID<br>V<br> [A]IF<br>gfs [S]<br>**----- End of picture text -----**<br> 4 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ **==> picture [217 x 277] intentionally omitted <==** **----- Start of picture text -----**<br> Typical Capacitance<br>C=f(VDS):VGS=0V,f=1MHzDS):VGS=0V,f=1MHz):VGS=0V,f=1MHzGS=0V,f=1MHz=0V,f=1MHz<br>1055<br>1044<br>1033 Ciss<br>1022<br>Coss<br>1011<br>Crss<br>1000<br>10-1-1<br>10-2-2 10-1-1 1000 1011 1022<br>VDS [V]DS [V] [V]<br>Typical Switching Characteristics vs. ID Tch=25°C<br>1033 t=f(ID):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH D):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH ):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH GS=10V/0V,RG=13Ω, L=500uH =10V/0V,RG=13Ω, L=500uH G=13Ω, L=500uH =13Ω, L=500uH<br>C [pF]<br>**----- End of picture text -----**<br> **==> picture [488 x 731] intentionally omitted <==** **----- Start of picture text -----**<br> C=f(VDS):VGS=0V,f=1MHzDS):VGS=0V,f=1MHz):VGS=0V,f=1MHzGS=0V,f=1MHz=0V,f=1MHz Typical Coss stored energy<br>1055 20<br>18<br>1044<br>16<br>1033 Ciss 14<br>12<br>1022 10<br>Coss 8<br>1011<br>6<br>Crss 4<br>1000<br>2<br>10-1-1 0<br>10-2-2 10-1-1 1000 1011 1022 0 100 200 300 400 500 600<br>VDS [V]DS [V] [V] VDS [V]<br>Typical Switching Characteristics vs. ID Tch=25°C Typical Gate Charge Characteristics<br>1033 t=f(ID):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH D):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH ):Vdd=400V,VGS=10V/0V,RG=13Ω, L=500uH GS=10V/0V,RG=13Ω, L=500uH =10V/0V,RG=13Ω, L=500uH G=13Ω, L=500uH =13Ω, L=500uH 10 VGS=f(Qg):ID=30A, Tch=25°C<br>Vdd=480V<br>300V<br>8<br>120V<br>tr<br>6<br>102<br>td(off)<br>4<br>td(on)<br>2<br>tf<br>101 0<br>100 101 102 0 10 20 30 40 50 60 70 80 90 100<br>ID [A] Qg [nC]<br>Maximum Avalanche Energy vs. startingTch Transient Thermal Impedance<br>2000 E(AV)=f(starting Tch):Vcc=60V,I(AV)<=6.6A 101 Zth(ch-c)=f(t):D=0<br>1800 IAS=2.0A<br>100<br>1600<br>1400<br>10-1<br>1200<br>1000<br>IAS=4.0A 10-2<br>800<br>600 IAS=6.6A 10-3<br>10-6 10-5 10-4 10-3 10-2 10-1 100<br>400<br>t [sec]<br>200<br>0<br>0 25 50 75 100 125 150<br> starting Tch [°C]<br>C [pF] Eoss [uJ]<br> [V]<br>t [ns] GS<br> V<br>Zth(ch-c) [℃/W]<br> [mJ]<br>AV<br> E<br>**----- End of picture text -----**<br> 5 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ **==> picture [425 x 133] intentionally omitted <==** **----- Start of picture text -----**<br> +10V<br>L VGS<br>-15V<br>BVDSS<br>Rg VDD IAV<br>D.U.T<br>VDS<br>0 ID<br>**----- End of picture text -----**<br> Fig.1 Avalanche Test circuit Fig.2 Operating waveforms of Avalanche Test **==> picture [232 x 117] intentionally omitted <==** **----- Start of picture text -----**<br> Diode L<br>VDD<br>Rg D.U.T<br>(MOSFET)<br>PG<br>**----- End of picture text -----**<br> Fig.3 Switching Test circuit **==> picture [340 x 110] intentionally omitted <==** **----- Start of picture text -----**<br> VDS VGS<br>VDS ×90% VDS ×90%<br>VGS ×90%<br>VDS ×10% VDS ×10%<br>VGS ×10%<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br> Fig.4 Operating waveform of Switching Test **==> picture [423 x 147] intentionally omitted <==** **----- Start of picture text -----**<br> VGS,VDS<br>VDS peak<br>IF<br>VDS VGS trr VDS<br>QG<br>10V<br>QSW<br>Irp×10%<br>QGS QGD<br>Qg Irp Qrr=∫ ir0trr・dt<br>**----- End of picture text -----**<br> Fig.5 Operating waveform of Gate charge Test Fig.6 Operating waveform of Reverse recovery Test 6 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ ## **Outview: TO-220F(SLS) Package** **==> picture [149 x 266] intentionally omitted <==** **==> picture [73 x 129] intentionally omitted <==** **==> picture [66 x 47] intentionally omitted <==** **==> picture [49 x 48] intentionally omitted <==** **----- Start of picture text -----**<br> Connection<br>1 Gate<br>2 Drain<br>3 Source<br>**----- End of picture text -----**<br> DIMENSIONS ARE IN MILLIMETERS. ## **Marking** ## Marking **==> picture [318 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Date code & Lot No.<br>Y: Last digit of year<br>Trademark<br>M: Month code 1~9 and O,N,D<br>NNN: Lot. serial number<br>Country of YMNNN Under bar of date code<br> origin mark. 30N60S1 : means lead-free mark<br> " " (Blank): Japan<br>P : Philippines Type name<br>* The font (font type,size) and the trademark-size<br> might be actually different.<br>**----- End of picture text -----**<br> 7 **FMV30N60S1** **FUJI POWER MOSFET** http://www.fujielectric.com/products/semiconductor/ ## **WARNING** **==> picture [455 x 350] intentionally omitted <==** **----- Start of picture text -----**<br> |||||| |---|---|---|---|---| |1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2015.| |The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be| |sur to obtain the latest specifications.| |2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or| |implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)| |granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged| |infringement of other's intellectual property rights which may arise from the use of the applications described herein.| |3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become| |faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent| |the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your| |design failsafe, flame retardant, and free of malfunction.| |4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability| |requirements.| |• Computers|• OA equipment|• Communications equipment (terminal devices)|• Measurement equipment| |• Machine tools|• Audiovisual equipment|• Electrical home appliances|• Personal equipment|• Industrial robots etc.| |5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,| |it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate| |measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment| |becomes faulty.| |• Transportation equipment (mounted on cars and ships)|• Trunk communications equipment| |• Traffic-signal control equipment|• Gas leakage detectors with an auto-shut-off feature| |• Emergency equipment for responding to disasters and anti-burglary devices|• Safety devices| |• Medical equipment| |6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment| |(without limitation).| |• Space equipment|• Aeronautic equipment|• Nuclear control equipment| |• Submarine repeater equipment| |7. Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved.| |No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.| |8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.| |Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions| |set forth herein.| **----- End of picture text -----**<br> 8
Updated at March 15, 2026
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