FMB2222A

Bipolar Transistor Array, Dual NPN, 40 V, 500 mA, 700 mW

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Manufacturer: ONSEMI
Product type: Bipolar Junction Transistor Arrays - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:700mW; DC Collector Current:500mA; DC Current Gain hFE:35hFE; Transistor Case Style:SuperSOT; No. of P
No. of Pins: 6Pins
Product Range: -
Qualification: -
Transistor Mounting: Surface Mount
Transistor Polarity: Dual NPN
Power Dissipation NPN: 700mW
Power Dissipation PNP: -
Transistor Case Style: SuperSOT
Transition Frequency NPN: 300MHz
Transition Frequency PNP: -
Operating Temperature Max: 150°C
DC Current Gain hFE Min NPN: 35hFE
DC Current Gain hFE Min PNP: -
Continuous Collector Current NPN: 500mA
Continuous Collector Current PNP: -
Collector Emitter Voltage Max NPN: 40V
Collector Emitter Voltage Max PNP: -

Delivery and price
Units per pack	20000
Price	0.048 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 10, 2026