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This product is RoHS compilant

FMB2222A

Bipolar Transistor Array, Dual NPN, 40 V, 500 mA, 700 mW, 35 hFE, SuperSOT

  • Manufacturer: ONSEMI
  • Product type: Bipolar Junction Transistor Arrays - BJT
  • Product variants: No other variants available. No other names.
  • No. of Pins: 6Pins
  • DC Current Gain hFE: 35hFE
  • Transistor Mounting: Surface Mount
  • Transistor Polarity: Dual NPN
  • DC Collector Current: 500mA
  • Power Dissipation Pd: 700mW
  • Power Dissipation NPN: 700mW
  • Transistor Case Style: SuperSOT
  • Transition Frequency NPN: 300MHz
  • Operating Temperature Max: 150°C
  • DC Current Gain hFE Min NPN: 35hFE
  • Continuous Collector Current NPN: 500mA
  • Collector Emitter Voltage Max NPN: 40V
  • Collector Emitter Voltage V(br)ceo: 40V
Delivery and price
Units per pack 20000
Price 0.054 €
Current stock N/A
Lead time 30 days
PDF File icon Datasheet