FK3506010L

Doc No. TT4-EA-12624 Revision. 3 

MOS FET FK3506010L 

Product Standards 

## FK3506010L 

## Silicon N-channel MOS FET 

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Unit : mm<br>For switching 2.0<br>FK330601 in SMini3 type package 0.3 0.13<br>3<br> Features<br> Low drive voltage : 2.5 V drive<br> Halogen-free / RoHS compliant<br>    (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)<br>1 2<br> Marking Symbol : CV<br>0.9<br> Packaging (0.65)(0.65)<br> Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) 1.3<br>1. Gate<br>2. Source<br>3. Drain<br> Absolute Maximum Ratings  Ta = 25C Panasonic SMini3-F2-B<br>Parameter Symbol Rating Unit JEITA SC-85<br>Drain-source voltage VDS 60 V Code ―<br>Gate-source voltage VGS 12 V<br>Drain current ID 100 mA<br>Pulse drain current IDp 200 mA Internal Connection<br>Total power dissipation PD 150 mW (D)<br>Channel temperature Tch 150 C 3<br>Operating ambient temperature Topr -40 to +85 C<br>Storage temperature Tstg -55 to +150 C<br>1 2<br>(G) (S)<br>Pin Name<br>1. Gate<br>2. Source<br>3. Drain<br>1.25 2.1<br>**----- End of picture text -----**<br>


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Page 1 of 5 

Established : 2010-06-07 Revised : 2013-07-08 

Doc No. TT4-EA-12624 Revision. 3 

MOS FET FK3506010L 

Product Standards 

##  Electrical Characteristics  Ta = 25C  3C 

|Electrical Characteristics  Ta = 25C|3C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Min|Typ|Max|Unit|
|Drain-source breakdown voltage|VDSS|ID = 1 mA,VGS = 0|60|||V|
|Drain-source cutoff current|IDSS|VDS = 60 V,VGS = 0|||1.0|A|
|Gate-source cutoff current|IGSS|VGS =10 V,VDS = 0|||10|A|
|Gate threshold voltage|VTH|ID = 1.0A,VDS = 3.0 V|0.9|1.2|1.5|V|
|Drain-source ON resistance|RDS(on)|ID = 10 mA,VGS = 2.5 V||8|15||
|||ID = 10 mA,VGS = 4.0 V||6|12||
|Forward transfer admittance||Yfs||ID = 10 mA,VDS = 3.0 V|20|60||mS|
|Input capacitance|Ciss|VDS = 3 V, VGS = 0, f = 1 MHz||12||pF|
|Output capacitance|Coss|||7||pF|
|Reverse transfer capacitance|Crss|||3||pF|
|Turn-on time*1|ton|VDD = 3 V, VGS = 0 to 3 V,<br>ID = 10 mA||100||ns|
|Turn-off time*1|toff|ID = 10 mA<br>VDD = 3 V, VGS = 3 to 0 V,||100||ns|



Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 

2. *1  Turn-on and Turn-off test circuit 

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VDD=3V<br>ID=10mA<br>RL=300Ω<br>90%<br>V GS 10% D Vout<br>Vin<br>10% VGS=0～3V G<br>V out<br>50Ω<br>90% S<br>ton toff<br>**----- End of picture text -----**<br>


Page 2 of 5 

Established : 2010-06-07 Revised : 2013-07-08 

Doc No. TT4-EA-12624 Revision. 3 

Product Standards 

## MOS FET FK3506010L 

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ID - VDS<br>0.1<br>4.0 V<br>0.08<br>2.5 V<br>0.06<br>0.04<br>0.02<br>VGS = 2.0 V<br>0<br>0 0.5 1 1.5<br>Drain-source Voltage VDS (V)<br>VDS - VGS<br>0.3<br>0.2<br>5 mA<br>ID = 20 mA<br>0.1<br>10 mA<br>0<br>2 3 4 5<br>Gate-source voltage VGS (V)<br>Capacitance - VDS<br>100<br>Ciss<br>10<br>Coss<br>1 Crss<br>0.1<br>0.1 1 10 100<br>Drain-source Voltage VDS (V)<br>Drain Current ID (A)<br>Drain-source Voltage VDS (V)<br>Capacitance C (pF)<br>**----- End of picture text -----**<br>


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ID - VGS<br>0.1<br>0.08<br>Ta= 85 ℃<br>0.06<br>25 ℃<br>0.04<br>0.02<br>-40 ℃<br>0<br>0 0.5 1 1.5 2 2.5 3<br>Gate-source voltage VGS (V)<br>RDS(on) - ID<br>100<br>2.5 V<br>10<br>VGS = 4.0 V<br>1<br>1 10 100<br>Drain Current ID (mA)<br>Drain current ID (A)<br>)<br>RDS(on)  (<br>Drain-source On-state Resistance<br>**----- End of picture text -----**<br>


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Established : 2010-06-07 Revised : 2013-07-08 

Doc No. TT4-EA-12624 Revision. 3 

Product Standards 

## MOS FET FK3506010L 

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Vth - Ta RDS(on) - Ta<br>2.5 12<br>10<br>2<br>VGS = 2.5 V<br>8<br>1.5<br>6<br>1 4.0 V<br>4<br>0.5<br>2<br>0 0<br>-50 0 50 100 150 -50 0 50 100 150<br>Temperature (℃) Temperature (℃)<br>PD - Ta<br>0.2<br>0.15<br>0.1<br>0.05<br>0<br>0 50 100 150<br>Temperature Ta (C)<br>Rth - tsw Safe Operating Area<br>1000 10<br>1 IDp = 0.2 A<br>0.1<br>1  ms<br>100 10  ms<br>0.01 10 0 ms<br>Operation in this area<br>is limited by RDS(on) 1  s<br>Ta = 25 C, DC<br>0.001<br>Glass epoxy board (25.4  25.4  t0.8mm)<br>coated with copper foil,<br>which has more than 300mm [2] .<br>0.0001<br>10<br>0.01 0.1 1 10 100<br>0.1 1 10 100 1000<br>Pulse Width tsw (s) Drain-source Voltage VDS (V)<br>RDS(on) (mΩ)<br>Drain-source On-resistance<br>Gate-source Threshold  Voltage (V)<br>Total Power Dissipation PD (W)<br>C/W)<br> Drain Current ID (A)<br>Thermal resistance Rth (<br>**----- End of picture text -----**<br>


Page 4 of 5 

Established : 2010-06-07 Revised : 2013-07-08 

Doc No. TT4-EA-12624 Revision. 3 

Product Standards 

## MOS FET FK3506010L 

## SMini3-F2-B 

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Unit : mm<br>2.0±0.2 +0.05<br>+0.05 0.13-0.02<br>0.30-0.02<br>3<br>1 2<br>(0.65) (0.65)<br>1.3±0.1<br>(5°)<br>0.9<br>1.3<br>0.1<br>±0.10 ±<br>1.25 2.1<br>(5°)<br>±0.050<br>0.425<br>)<br>0.1 0.49)<br>± (<br>0.89<br>( 0.9<br>0 to 0.1<br>0.8<br>1.9<br>**----- End of picture text -----**<br>


-  Land Pattern (Reference) (Unit : mm) 

Page 5 of 5 

Established : 2010-06-07 Revised : 2013-07-08 

## Request for your special attention and precautions in using the technical information and semiconductors described in this book 

- (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 

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