FK3303010L

Doc No. TT4-EA-12576 Revision. 3 

Product Standards 

## MOS FET FK3303010L 

## FK3303010L 

## Silicon N-channel MOS FET 

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Unit : mm<br>For switching 1.2<br>FK350301 in SSSMini3 type package 0.3 0.13<br>3<br> Features<br> Low drive voltage: 2.5 V drive<br> Halogen-free / RoHS compliant<br>    (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)<br>1 2<br> Marking Symbol X1 0.2 0.52<br>(0.4) (0.4)<br>0.8<br> Packaging<br> Embossed type (Thermo-compression sealing): 10 000 pcs / reel (standard) 1. Gate<br>2. Source<br>3. Drain<br> Absolute Maximum Ratings  Ta = 25C Panasonic SSSMini3-F2-B<br>Parameter Symbol Rating Unit JEITA SC-105AA<br>Drain-source voltage VDSS 30 V Code SOT-723<br>Gate-source  voltage VGSS 12 V<br>Drain current ID 100 mA<br>Pulse drain current IDp 200 mA Internal Connection<br>Total power dissipation PD 100 mW (D)<br>Channel temperature Tch 150 C 3<br>Operating ambient temperature Topr -40 to + 85 C<br>Storage temperature Tstg -55 to +150 C<br>1 2<br>(G) (S)<br>Pin Name<br>1. Gate<br>2. Source<br>3. Drain<br>0.8 1.2<br>**----- End of picture text -----**<br>


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Established : 2010-05-17 Revised : 2013-06-24 

Doc No. TT4-EA-12576 Revision. 3 

MOS FET FK3303010L 

Product Standards 

##  Electrical Characteristics  Ta = 25C  3C 

|Electrical Characteristics  Ta = 25C|3C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Min|Typ|Max|Unit|
|Drain-source breakdown voltage|VDSS|ID = 1 mA,VGS = 0|30|||V|
|Drain-source cutoff current|IDSS|VDS = 30 V,VGS = 0|||1.0|A|
|Gate-source cutoff current|IGSS|VGS =10 V,VDS = 0|||10|A|
|Gate threshold voltage|VTH|ID = 1.0A,VDS = 3.0 V|0.5|1.0|1.5|V|
|Drain-source on-state resistance|RDS(on)1|ID = 10 mA,VGS = 2.5 V||3|6||
||RDS(on)2|ID = 10 mA,VGS = 4.0 V||2|3||
|Forward transfer admittance||Yfs||ID = 10 mA,VDS = 3.0 V|20|55||mS|
|Input capacitance|Ciss|VDS = 3 V, VGS = 0, f = 1 MHz||12||pF|
|Output capacitance|Coss|||7||pF|
|Reverse transfer capacitance|Crss|||3||pF|
|Turn-on time*1|ton|VDD = 3 V, VGS = 0 to 3 V<br>RL = 300||100||ns|
|Turn-off time*1|toff|VDD = 3 V, VGS = 3 to 0 V<br>RL = 300||100||ns|



Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 

2. *1  Turn-on and Turn-off test circuit 

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VDD=3V<br>ID=10mA<br>RL=300Ω<br>90%<br>V GS 10% D Vout<br>Vin<br>10% VGS=0～3V G<br>V out<br>50Ω<br>90% S<br>ton toff<br>**----- End of picture text -----**<br>


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Established : 2010-05-17 Revised : 2013-06-24 

Doc No. TT4-EA-12576 Revision. 3 

Product Standards 

## MOS FET FK3303010L 

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 ID - VDS ID - VGS<br>0.1 0.1<br>VGS = 4.0 V<br>0.08<br>2.5 V Ta = 85 ℃<br>0.06<br>2.0 V<br>0.05 25 ℃<br>0.04<br>-40 ℃<br>0.02<br>1.5 V<br>0<br>0<br>0 0.2 0.4 0.6 0.8 1 1.2<br>0 1 2 3<br>Drain-source Voltage VDS (V)<br>Gate-source voltage VGS (V)<br>VDS - VGS    RDS(on) - ID<br>0.2 10<br>VGS = 2.5 V<br>0.16<br>0.12<br>1 4.0 V<br>ID = 20.0 mA<br>0.08<br>10.0 mA<br>0.04<br>5.0 mA<br>0.1<br>0<br>1 10 100<br>0 1 2 3 4 5 6<br>Drain current ID (mA)<br>Gate-source Voltage VGS (V)<br>Capacitance - VDS<br>100<br>Cis<br>10<br>Cos<br>Crs<br>1<br>0.1 1 10 100<br>Drain-source Voltage VDS (V)<br>Drain Current ID (A) Drain current ID (A)<br>)<br> RDS(on) (<br>Drain-source Voltage VDS (V)<br>Drain-source On-state  Resistance<br>Capacitance  C (pF)<br>**----- End of picture text -----**<br>


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Established : 2010-05-17 Revised : 2013-06-24 

Doc No. TT4-EA-12576 Revision. 3 

Product Standards 

## MOS FET FK3303010L 

Vth - Ta 

## RDS(on) - Ta 

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2.5 4<br>VGS = 2.5 V<br>2<br>3<br>1.5<br>2<br>1  4.0 V<br>1<br>0.5<br>0<br>0<br>-50 0 50 100 150 -50 0 50 100 150<br>Temperature (℃) Temperature (℃)<br>PD - Ta<br>0.15<br>0.1<br>0.05<br>0<br>0 50 100 150<br>Temperature Ta (C)<br>  Rth -tsw   Safe Operating Area<br>1000 10<br>1<br>IDp = 0.2A<br>100<br>0.1 1ms<br>10ms<br>100 ms<br>0.01 Operation in this area 1s<br>10 is limited by RDS(on)<br>DC<br>0.001 Ta=25 Glass epoxy board (25.4 ℃, ×25.4×t0.8mm)<br>coated with copper foil,<br>which has more than 300mm2.<br>1<br>0.0001<br>1E-04 0.001 0.01 0.1 1 10 100 1000<br>0.01 0.1 1 10 100<br>Pulse Width tsw (s) Drain-source Voltage VDS (V)<br>RDS(on) (Ω)<br>Drain-source On-resistance<br>Gate-source Threshold Voltage (V)<br>Total Power Dissipation PD (W)<br>C/W)<br>Thermal Resistance Rth ( Drain Current ID (A)<br>**----- End of picture text -----**<br>


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Established : 2010-05-17 Revised : 2013-06-24 

Doc No. TT4-EA-12576 Revision. 3 

Product Standards 

## MOS FET FK3303010L 

## SSSMini3-F2-B 

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Unit : mm<br>**----- End of picture text -----**<br>


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1.20±0.05 +0.05<br>+0.05 0.13-0.02<br>0.30-0.02<br>3<br>1 2<br>+0.05<br>0.20-0.02<br>(0.4) (0.4)<br>0.80±0.05<br>(5°)<br>0.45<br>0.35 0.35<br>0.4 0.4<br>±0.05 0.05±<br>0.80 1.20<br>(5°)<br>±0.05<br>0.20<br>0.03 0.27)<br>± (<br>0.52<br>05<br>0 to 0.<br>0.35<br>1.15<br>0.35<br>**----- End of picture text -----**<br>


##  Land Pattern (Reference) (Unit: mm) 

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Established : 2010-05-17 Revised : 2013-06-24 

## Request for your special attention and precautions in using the technical information and semiconductors described in this book 

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