FJP13007TU

Bipolar (BJT) Single Transistor, NPN, 400 V, 8 A, 80 W, TO-220, Through Hole

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Manufacturer: ONSEMI
Product type: Single Bipolar Junction Transistors - BJT
Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Transition Frequency ft:4MHz; Power Dissipation Pd:80W; DC Collector Current:8A; DC Current Gain hFE:8hFE; Transistor Case Style:TO-220;
No. of Pins: 3Pins
Product Range: -
Qualification: -
Power Dissipation: 80W
Transistor Mounting: Through Hole
Transistor Polarity: NPN
Transition Frequency: 4MHz
Transistor Case Style: TO-220
DC Current Gain hFE Min: 8hFE
Operating Temperature Max: 150°C
Continuous Collector Current: 8A
Collector Emitter Voltage Max: 400V

Delivery and price
Units per pack	1000
Price	0.209 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at March 14, 2026