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FGB40T65SPD-F085

IGBT, N-Ch, 80 A, 2 V, 267 W, 650 V, TO-263AB, 3 Pins

  • Manufacturer: ONSEMI
  • Product type: Single IGBTs
  • DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:267W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263AB; No.
  • MSL: MSL 1 - Unlimited
  • SVHC: Lead (25-Jun-2025)
  • No. of Pins: 3Pins
  • Product Range: -
  • Power Dissipation: 267W
  • Transistor Mounting: Surface Mount
  • Transistor Case Style: TO-263AB
  • Operating Temperature Max: 175°C
  • Continuous Collector Current: 80A
  • Collector Emitter Voltage Max: 650V
  • Collector Emitter Saturation Voltage: 2V
Delivery and price
Units per pack 1000
Price 1.64 €
Current stock 10+
Lead time 30 days

Updated at March 23, 2026