FFSB0665B-F085

**DATA SHEET www.onsemi.com** 

## Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L 

## FFSB0665B-F085 

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. 

## **Features** 

- Max Junction Temperature 175  C 

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VRRM IF<br>650 V 6.0 A<br>Cathode Anode<br>Schottky Diode<br>Cathode<br>Cathode<br>Anode<br>D [2] PAK2 (TO−263−2L)<br>CASE 418BK<br>**----- End of picture text -----**<br>


- Avalanche Rated 24.5 mJ 

- High Surge Current Capacity 

## **MARKING DIAGRAM** 

- Positive Temperature Coefficient 

- Ease of Paralleling 

- No Reverse Recovery / No Forward Recovery 

- AEC−Q101 Qualified and PPAP Capable 

- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 

## **Applications** 

- Automotive HEV−EV Onboard Chargers 

- Automotive HEV−EV DC−DC Converters 

## **MAXIMUM RATINGS** (TJ = 25C unless otherwise noted) 

|**MAXIMUM RATINGS**(TJ= 25C unless otherw|**MAXIMUM RATINGS**(TJ= 25C unless otherw|ise noted)|||
|---|---|---|---|---|
|**Parameter**||**Symbol**|**Value**|**Unit**|
|Peak Repetitive Reverse Voltage||VRRM|650|V|
|Single Pulse Avalanche Energy (TJ= 25C,<br>IL(pk)= 9.9 A, L = 0.5 mH, V = 50 V)||EAS|24.5|mJ|
|Continuous Rectified Forward<br>Current|@ TC< 150|IF|6.0|A|
||@ TC< 135||8.0||
|Non−Repetitive Peak Forward<br>Surge Current|TC= 25C<br>tP= 10�s|IFM|523|A|
||TC= 150C<br>tP= 10�s||467||
|Non−Repetitive Forward Surge<br>Current (Half−Sine Pulse)|TC= 25C<br>tP= 8.3 ms|IFSM|45|A|
|Power Dissipation|TC= 25C|Ptot|61|W|
||TC= 150C||10||
|Operating Junction and Storage Temperature<br>Range||TJ, Tstg|−55 to<br>+175|C|



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AYWWZZ<br>FFSB<br>0665B<br>A = Assembly Plant Code<br>YWW = Date Code (Year & Week)<br>ZZ = Lot Code<br>FFSB0665B = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

Publication Order Number: **FFSB0665B−F085/D** 

**1** 

 Semiconductor Components Industries, LLC, 2019 **February, 2023 − Rev. 3** 

**FFSB0665B−F085** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Value**|**Unit**|
|Thermal Resistance, Junction−to−Case, Max.|R�JC|2.46|C/W|



## **ELECTRICAL CHARACTERISTICS** (TJ = 25C unless otherwise noted) 

|**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25C un|less otherwise noted)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**|
|**ON CHARACTERISTICS**|||||||
|Forward Voltage|VF|IF= 6.0 A, TJ= 25C||1.38|1.7|V|
|||IF= 6.0 A, TJ= 125C||1.53|2.0||
|||IF= 6.0 A, TJ= 175C||1.67|2.4||
|Reverse Current|IR|VR= 650 V, TJ= 25C||0.5|40|�A|
|||VR= 650 V, TJ= 125C||1.0|80||
|||VR= 650 V, TJ= 175C||2.0|160||
|**CHARGES, CAPACITANCES & GATE**|**RESISTANCE**||||||
|Total Capacitive Charge|QC|VC= 400 V||16||nC|
||Ctot|VR= 1 V, f = 100 kHz||259||pF|
|||VR= 200 V, f = 100 kHz||29|||
|||VR= 400 V, f = 100 kHz||22|||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Marking**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FFSB0665B−F085|FFSB0665B|D2PAK2<br>(TO−263−2L)|Tape & Reel†|330 mm|24 mm|800 Units|



†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 

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**2** 

**FFSB0665B−F085** 

## **TYPICAL CHARACTERISTICS** 

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12<br>TJ = −55 [o] C<br>TJ = 25 [o] C<br>9<br>TJ = 75 [o] C<br>TJ = 175 [o] C<br>TJ = 125 [o] C<br>6<br>3<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>VF, FORWARD VOLTAGE (V)<br>Figure 1. Forward Characteristics<br>80<br>D = 0.1<br>60<br>D = 0.2<br>40<br>D = 0.3<br>D = 0.5<br>20<br>D = 0.7 D = 1<br>0<br>25 50 75 100 125 150 175<br>TC , CASE TEMPERATURE  ( [o] C )<br>, FORWARD CURRENT (A)<br>IF<br>, PEAK FORWARD CURRENT (A)<br>IF<br>**----- End of picture text -----**<br>


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10 −6<br>10 −7<br>T J = 175 [o] C<br>10 −8 TJ = 125 [o] C<br>TJ = 75 [o] C<br>T J = 25 [o] C<br>TJ = −55 [o] C<br>10 −9<br>0 100 200 300 400 500 600 650<br>V R , REVERSE VOLTAGE (V)<br>, REVERSE CURRENT (A)<br>IR<br>**----- End of picture text -----**<br>


**Figure 2. Reverse Characteristics** 

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80<br>60<br>40<br>20<br>0<br>25 50 75 100 125 150 175<br>TC , CASE TEMPERATURE  ( [o] C )<br>, POWER DISSIPATION (W)<br>TOT<br>P<br>**----- End of picture text -----**<br>


**Figure 3. Current Derating** 

**Figure 4. Power Derating** 

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25 1000<br>20<br>15<br>100<br>10<br>5<br>0 10<br>0 100 200 300 400 500 600 650 0.1 1 10 100 650<br>VR, REVERSE VOLTAGE (V) V R , REVERSE VOLTAGE (V)<br>CAPACITANCE (pF)<br>, CAPACITIVE CHARGE (nC)<br>C<br>Q<br>**----- End of picture text -----**<br>


**Figure 5. Capacitive Charge vs. Reverse Voltage** 

**Figure 6. Capacitance vs. Reverse Voltage** 

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**3** 

**FFSB0665B−F085** 

## **TYPICAL CHARACTERISTICS** 

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6<br>4<br>2<br>0<br>0 100 200 300 400 500 600 650<br>V R , REVERSE VOLTAGE (V)<br>Figure 7. Capacitance Stored Energy<br>2<br>DUTY CYCLE−DESCENDING ORDER<br>1<br>D=0.5<br>0.1<br>D=0.2<br>D=0.1<br>D=0.05<br>0.01 D=0.02<br>D=0.01<br>SINGLE PULSE<br>0.001<br>10 −6 10 −5 10 −4 10 −3 10 −2 10 −1 1<br>t, RECTANGULAR PULSE DURATION (sec)<br>J)<br> �<br>, CAPACITIVE ENERGY (<br>C<br>E<br>THERMAL RESISTANCE<br>r(t), NORMALIZED EFFECTIVE TRANSIENT<br>**----- End of picture text -----**<br>


**Figure 8. Junction−to−Case Transient Thermal Response** 

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**4** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

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**D[2] PAK2 (TO−263−2L)** CASE 418BK ISSUE O 

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DATE 02 AUG 2018<br>**----- End of picture text -----**<br>


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GENERIC<br>MARKING DIAGRAM*<br>**----- End of picture text -----**<br>


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XXXXXXXXG<br>AYWW<br>XXX = Specific Device Code<br>A = Assembly Location<br>Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>**----- End of picture text -----**<br>


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*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ � ”, may or may not be present. Some products may not follow the Generic Marking. 

Electronic versions are uncontrolled except when accessed directly from the Document Repository. **DOCUMENT NUMBER: 98AON93788G** Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red. **DESCRIPTION: D[2] PAK2 (TO−263−2L) PAGE 1 OF 1** 

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