FFPF10UP20STU

## FFPF10UP20S 

## 10 A, 200 V, Ultrafast Diode 

## **Description** 

The FFPF10UP20S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applications as welder and UPS application. 

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## **Features** 

- Ultrafast Recovery trr = 35 ns (@ IF = 1 A) 

- Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) 

- Reverse Voltage, VRRM = 200 V 

- Avalanche Energy Rated 

- This Device is Pb−Free and is RoHS Compliant 

## **Applications** 

- Power Switching Circuits, SMPS 

- Output Rectifiers 

- Freewheeling Diodes 

## **ABSOLUTE MAXIMUM RATINGS** 

TC = 25 ° C unless otherwise noted 

**Symbol Parameter Rating Unit** VRRM Peak Repetitive Reverse Voltage 200 V VRWM Working Peak Reverse Voltage 200 V IF(AV) Average Rectified Forward Current @ TC = 25 ° C 10 A IFSM Non−repetitive Peak Surge Current 100 A 60 Hz Single Half−Sine Wave TJ, TSTG Operating Junction and Storage −65 to °C Temperature +175 ~~===~~ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

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1 2<br>  1. Cathode         2. Anode<br>LD<br>1 2<br>TO−220, 2−Lead<br>CASE 221AS<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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$Y&Z&3&K<br>F10UP20S<br>**----- End of picture text -----**<br>


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$Y = ON Semiconductor Logo<br>&Z&3 = Data Code (Year & Week)<br>&K = Lot<br>F10UP20S = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FFPF10UP20S/D** 

**1** 

© Semiconductor Components Industries, LLC, 2009 **March, 2019 − Rev. 4** 

**FFPF10UP20S** 

## **THERMAL CHARACTERISTICS** TC = 25 ° C unless otherwise noted 

|**Symbol**|**Parameter**|**Max.**|**Unit**|
|---|---|---|---|
|RθJC|Maximum Thermal Resistance, Junction to Case|4.3|°C/W|



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FFPF10UP20STU|F10UP20S|TO−220F−2L|Tube|N/A|N/A|50|



## **ELECTRICAL CHARACTERISTICS** TC = 25 ° C unless otherwise noted 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**TC = 25C = 25= 25°C unless otherwise noted|**ELECTRICAL CHARACTERISTICS**TC = 25C = 25= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|VF<br>(Note 1)|Forward Voltage<br>IF= 10 A<br>IF= 10 A|TC= 25°C<br>TC= 125°C|−<br>−|−<br>−|1.15<br>1.10|V|
|IR<br>(Note 1)|Reverse Current<br>@ rated VR|TC= 25°C<br>TC= 100°C|−<br>−|−<br>−|100<br>500|A|
|trr<br>Irr<br>Qrr|Reverse Recovery Time<br>Reverse Recovery Current<br>Reverse Recovery Charge<br>(IF= 6 A, diF/dt = 200 A/ s, VR= 130 V)|TC= 25°C|−<br>−<br>−|32<br>1.65<br>24.4|−<br>−<br>−|ns<br>A<br>nC|
|WAVL|Avalanche Energy (L = 40 mH)||5|−|−|mJ|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% u 

## **Test Circuit and Waveforms** 

**Figure 1. Diode Reverse Recovery Test Circuit & Waveform** 

**Figure 2. Unclamped Inductive Switching Test Circuit & Waveform** 

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**2** 

**FFPF10UP20S** 

## **TYPICAL CHARACTERISTICS** 

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50<br>10<br>TC = 100 ° C<br>TC = 25 ° C<br>1<br>0.1<br>0.0 0.5 1.0 1.5 2.0<br>Forward Voltage, VF [V]<br>Figure 3. Typical Forward Voltage Drop<br>vs. Forward Current<br>150<br>Typical Capacitance<br>at 0 V = 141.45 pF<br>100<br>50<br>0.1 1 10 100<br>Reverse Voltage, VR [V]<br>Figure 5. Typical Junction Capacitance<br>5<br>IF = 10 A<br>TC = 25 ° C<br>4<br>3<br>2<br>1<br>0<br>100 150 200 250 300 350 400 450500<br>di/dt, [A/ � s]<br> [A]<br>F<br>Forward Current, I<br> [pF]<br>J<br>Capacitance, C<br> [A]<br>rr<br>Reverse Recovery Current, I<br>**----- End of picture text -----**<br>


**Figure 7. Typical Reverse Recovery Current vs. diF/dt** 

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10<br>1<br>TC = 100 ° C<br>0.1<br>0.01<br>TC = 25 ° C<br>1E−3<br>0.001<br>0 50 100 150 200<br>Reverse Voltage, VR [V]<br>Figure 4. Typical Reverse Current<br>vs. Reverse Voltage<br>40<br>IF = 10 A<br>T C  = 25 ° C<br>35<br>30<br>25<br>20<br>100 150 200 250 300 350 400 450500<br>di/dt, [A/ � s]<br>A]<br>�<br> [<br>R<br>Reverse Current, I<br> [ns]<br>rr<br>Reverse Recovery Time, t<br>**----- End of picture text -----**<br>


**Figure 6. Typical Reverse Recovery Time vs. diF/dt** 

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12<br>10<br>8<br>6<br>4<br>2<br>0<br>25 50 75 100 125 150 175<br>Case Temperature, TC [ ° C]<br> [A]<br>F(AV)<br>Average Forward Current, I<br>**----- End of picture text -----**<br>


**Figure 8. Forward Current Derating Curve** 

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**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220 Fullpack, 2−Lead / TO−220F−2FS** CASE 221AS ISSUE O DATE 29 FEB 2012 

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**DOCUMENT NUMBER: 98AON67438E** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed **STATUS: ON SEMICONDUCTOR STANDARD** versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ~~**NEW STANDARD:**~~ © Semiconductor Components Industries, LLC, 2002 **http://onsemi.com** Case Outline Number: **October, 2002 − Rev. 0DESCRIPTION: TO−220 FULLPACK, 2−LEAD / TO−220F−2FS1 PAGE 1 OF 2XXX** 

|**DOCUMENT NUMBER:**<br>**98AON67438E**<br>**PAGE 2 OF 2**<br>~~— ©~~<br>~~———~~|**DOCUMENT NUMBER:**<br>**98AON67438E**<br>**PAGE 2 OF 2**<br>~~— ©~~<br>~~———~~|
|---|---|
|**ISSUE**|**REVISION**<br>**DATE**|
|O|RELEASED FOR PRODUCTION FROM SANYO ENACT# TC−00002258 TO ON<br>29 FEB 2012|
||SEMICONDUCTOR. REQ. BY D. TRUHITTE.|



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Case Outline Number: 

© Semiconductor Components Industries, LLC, 2012 **February, 2012 − Rev. O** 

**221AS** 

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