FFPF10F150STU

## FFPF10F150S 

## 10 A, 1500 V, Damper Diode 

## **Features** 

- High Speed Recovery tRR = 170 ns (@ IF = 1 A) 

- Max Forward Voltage, VF = 1.6 V (@ TC = 25°C) 

## **www.onsemi.com** 

- 1500 V Reverse Voltage and High Reliability 

- Low Forward Voltage 

- This Device is Pb−Free and is RoHS Compliant 

## **Applications** 

- Suitable for Damper Diode in Horizontal Deflection Circuits 

## **ABSOLUTE MAXIMUM RATINGS** 

TC = 25 ° C unless otherwise noted 

|**Symbol**|**Parameter**|**Rating**|**Unit**|
|---|---|---|---|
|VRRM|Peak Repetitive Reverse Voltage|1500|V|
|VRWM|Working Peak Reverse Voltage|1500|V|
|IF(AV)|Average Rectified Forward Current<br>@ TC= 125°C|10|A|
|IFSM|Non−repetitive Peak Surge Current<br>60Hz Single Half−Sine Wave|100|A|
|TJ,TSTG|Operating Junction and Storage<br>Temperature|− 65 to<br>+175|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

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1 2<br>  1. Cathode         2. Anode<br>1 2<br>TO−220, 2−Lead<br>CASE 221AS<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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$Y&Z&3&K<br>F10F150S<br>=<br>it<br>$Y = ON Semiconductor Logo<br>&Z&3 = Data Code (Year & Week)<br>&K = Lot<br>F10F150S = Specific Device Code<br>**----- End of picture text -----**<br>


## **ORDERING INFORMATION** 

See detailed ordering and shipping information on page 2 of this data sheet. 

Publication Order Number: **FFPF10F150S/D** 

**1** 

© Semiconductor Components Industries, LLC, 2000 **March, 2019 − Rev. 3** 

**FFPF10F150S** 

## **THERMAL CHARACTERISTICS** TC = 25 ° C unless otherwise noted 

|**THERMAL CHARACTERISTICS**|**THERMAL CHARACTERISTICS**TC = 25C = 25= 25°C unless otherwise noted|||
|---|---|---|---|
|**Symbol**|**Parameter**|**Max.**|**Unit**|
|RθJC|Maximum Thermal Resistance, Junction to Case|3.0|°C/W|



## **PACKAGE MARKING AND ORDERING INFORMATION** 

|**Part Number**|**Top Mark**|**Package**|**Packing Method**|**Reel Size**|**Tape Width**|**Quantity**|
|---|---|---|---|---|---|---|
|FFPF10F150STU|F10F150S|TO−220F−2L|Tube|N/A|N/A|30|



## **ELECTRICAL CHARACTERISTICS** TC = 25 ° C unless otherwise noted 

|**ELECTRICAL CHARACTERISTICS**|**ELECTRICAL CHARACTERISTICS**TC = 25C = 25= 25°C unless otherwise noted|**ELECTRICAL CHARACTERISTICS**TC = 25C = 25= 25°C unless otherwise noted|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Conditions**||**Min.**|**Typ.**|**Max.**|**Unit**|
|VF<br>(Note 1)|Maximum Instantaneous Forward Voltage<br>IF= 10 A<br>IF= 10 A|TC= 25°C<br>TC= 125°C|−<br>−|−<br>−|1.6<br>1.4|V|
|IR<br>(Note 1)<br>~~ee~~|Maximum Instantaneous Reverse Current<br>@ rated VR<br>~~ee~~|TC= 25°C<br>TC= 125°C<br>~~ee~~|−<br>−<br>~~ee~~|−<br>−<br>~~ee~~|10<br>80<br>~~ee~~|A<br>~~ee~~|
|tRR<br>~~ee~~|Maximum Reverse Recovery Time (IF= 1 A, diF/dt = 50 A/ s, VR= 30 V)<br>~~ee~~||−<br>~~ee~~|−<br>~~ee~~|170<br>~~ee~~|ns<br>~~ee~~|
|tFR<br>~~ee~~<br>~~a ~~|Maximum Forward Recovery Time (IF= 6.5 A, diF/dt = 50 A/ s)<br>~~ee~~<br> ~~ee~~||−<br>~~ee~~<br>~~ee~~|−<br>~~ee~~<br>~~ee~~|250<br>~~ee~~<br>~~ee~~|ns<br>~~ee~~<br>~~ee~~|
|VFRM|Maximum Forward Recovery Voltage||−|−|14|V|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% u 

## **Test Circuit and Waveforms** 

**Figure 1. Diode Reverse Recovery Test Circuit & Waveform** 

**Figure 2. Unclamped Inductive Switching Test Circuit & Waveform** 

**www.onsemi.com** 

**2** 

**FFPF10F150S** 

## **TYPICAL CHARACTERISTICS** 

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100<br>10<br>TJJ = 125 125 ° C<br>1<br>T J  = 100 ° C<br>0.1<br>T J  = 25 ° C<br>0.01<br>0.001<br>0 300 600 900 1200 1500<br>Reverse Voltage, VR [V]R [V] [V]<br>A]<br>�<br> [<br>R<br>Reverse Current, I [<br>**----- End of picture text -----**<br>


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100 100<br>10<br>10 TJJ = 125 125 ° C<br>1<br>T J  = 125 ° C T J  = 100 ° C<br>0.1<br>1 TJ = 25 ° C T J  = 25 ° C<br>0.01<br>0.1 0.001<br>0.0 0.4 0.8 1.2 1.6 2.0 0 300 600 900 1200 1500<br>Forward Voltage, VF [V] Reverse Voltage, VR [V]R [V] [V]<br>Figure 3. Typical Forward Voltage Drop Figure 4. Typical Reverse Current<br>200 400<br>Typical Capacitance<br>180<br>at 0 V = 150 pF<br>160<br>300<br>140 di/dt = 50 A/ � s<br>120<br>100 200<br>80<br>di/dt = 100 A/ � s<br>60<br>100<br>40<br>20<br>0 0<br>0.1 1 10 100 1 2 3 4 5 6 7 8 9 10<br>Reverse Voltage, VR [V] Forward Voltage, IF [A]<br>Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time<br>2000 12<br>10<br>di/dt = 100 A/ � s<br>1500<br>8<br>1000 6<br>di/dt = 50 A/ � s<br>4<br>500<br>2<br>0 0<br>1 2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>Forward Current, IF [A] Case Temperature, TC [ ° C]<br>A]<br>Forward Current, I [A]F Reverse Current, I [ � R<br> [ns]<br>RR<br> [pF]<br>J<br>Capacitance, C<br>Reverse Recovery Time, t<br> [nC]  [A]<br>RR F(AV)<br>Stored Recovery Charge, Q Average Forward Current, I<br>**----- End of picture text -----**<br>


**Figure 7. Typical Stored Charge** 

**Figure 8. Forward Current Deration Curve** 

**www.onsemi.com** 

**3** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**TO−220 Fullpack, 2−Lead / TO−220F−2FS** CASE 221AS ISSUE O DATE 29 FEB 2012 

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**DOCUMENT NUMBER: 98AON67438E** Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed **STATUS: ON SEMICONDUCTOR STANDARD** versions are uncontrolled except when stamped “CONTROLLED COPY” in red. ~~**NEW STANDARD:**~~ © Semiconductor Components Industries, LLC, 2002 **http://onsemi.com** Case Outline Number: **October, 2002 − Rev. 0DESCRIPTION: TO−220 FULLPACK, 2−LEAD / TO−220F−2FS1 PAGE 1 OF 2XXX** 

|**DOCUMENT NUMBER:**<br>**98AON67438E**<br>**PAGE 2 OF 2**<br>~~— ©~~<br>~~———~~|**DOCUMENT NUMBER:**<br>**98AON67438E**<br>**PAGE 2 OF 2**<br>~~— ©~~<br>~~———~~|
|---|---|
|**ISSUE**|**REVISION**<br>**DATE**|
|O|RELEASED FOR PRODUCTION FROM SANYO ENACT# TC−00002258 TO ON<br>29 FEB 2012|
||SEMICONDUCTOR. REQ. BY D. TRUHITTE.|



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Case Outline Number: 

© Semiconductor Components Industries, LLC, 2012 **February, 2012 − Rev. O** 

**221AS** 

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