FFH50US60S

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## **FFH50US60S** 

## **50 A, 600 V, STEALTH™ Diode** 

## **Description** 

## **Features** 

The FFH50US60S is a STEALTH™ diode optimized for low • Stealth Recovery, trr = 113 ns (@ IF = 50 A) loss performance in output rectification. The STEALTH™ • Max Forward Voltage, VF = 1.54 V (@ TC = 25°C) family exhibits low reverse recovery current (IRR), low VF and soft recovery under typical operating conditions. This device • 600V Reverse Voltage and High Reliability is intended for use as an output rectification diode in • Operating Temperature = 175°C Telecom power supplies and other power switching applications. Lower VF and IRR reduces diode losses. • Avalanche Energy Rated Formerly developmental type TA49468. 

- Operating Temperature = 175°C 

- Avalanche Energy Rated 

- RoHS Compliant 

## **Applications** 

- SMPS, Welders 

- Power Factor Correction 

- Uninterruptible Power Supplies 

- Motor Drives 

|**Applications**<br> SMPS, Welders, Welders<br> Power Factor Correction<br> Uninterruptible Power Supplies<br> Motor Drives||||||
|---|---|---|---|---|---|
|**Package**||**Symbol**||||
|**JEDEC STYLE 2 LEAD TO-247**||||||
|**ANODE**||||||
||||**K**|||
|**CATHODE**||||||
||||**A**|||
|**CATHODE**||||||
|**(BOTTOM SIDE**<br>**METAL)**<br>a||||||
|**Device Maximum Ratings  **TC = 25°C unless otherwise noted||||||
|Symbol<br>Parameter||Rating|||Unit|
|VRRM<br>Repetitive Peak Reverse Voltage||600|||V|
|VRWM<br>WorkingPeak Reverse Voltage||600|||V|
|VR<br>DC BlockingVoltage||600|||V|
|IF(AV)<br>Average Rectified Forward Current(TC= 120|= 120oC)|50|||A|
|IFRM<br>Repetitive Peak Surge Current(20kHz S|20kHz Square Wave)|100|||A|
|IFSM<br>Nonrepetitive Peak Surge Current(Halfwave 1 Phase 60 Hz)||500|||A|
|PD<br>Power Dissipation||200|||W|
|EAVL<br>Avalanche Energy (1 A, 40 mH)||20|||mJ|
|TJ, TSTG<br>Operatingand Storage Temperature Range||-55 to 175|||°C|
|TL<br>Maximum Temperature for Soldering||300|||°C|
|TPKG<br>Leads at 0.063 in (1.6mm) from Case for 10 s||260|||°C|
|Package Body for 10s, See Application Note AN-7528||||||
|CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and||||||
|operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.|operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.||operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.|||



## **Device Maximum Ratings** TC = 25°C unless otherwise noted 

www.fairchildsemi.com 

**1** 

©2003 Fairchild Semiconductor Corporation FFH50US6  Rev. C1 

## **Package Marking and Ordering Information** 

**Device Marking Device Package Packing Methode Reel Size Tape Width Quantity** FFH50US60S FFH50US60S TO247-2L Tube N/A N/A 30 ~~——————~~ **Electrical Characteristics TC = 25°C unless otherwise noted** ~~aCO~~ Symbol Parameter Test Conditions Min Typ Max Unit **Off State Characteristics** IR Instantaneous Reverse Current VR = 600 V TC = 25°C - - 100 µA ~~fo~~ TC = 125°C ~~EEE~~ - - 1 mA ~~|~~ **On State Characteristics** VF Instantaneous Forward Voltage IF = 50 A TC = 25°C - 1.38 1.54 V ~~|~~ TC = 125°C ~~EE~~ - 1.37 1.53 V ~~|~~ **Dynamic Characteristics** ~~4~~ CJ Junction Capacitance VR = 10 V, IF = 0 A - 110 - pF **Switching Characteristics** trr Reverse Recovery Time IF = 1 A, dIF/dt = 100 A/µs, VR = 15 V - 47 80 ns IF = 50 A, dIF/dt = 100 A/µs, VR = 15 V - 75 124 ns ~~.—( rE, OL a~~ trr Reverse Recovery Time IF = 50 A, - 113 - ns IRR Reverse Recovery Current dIF/dt = 200 A/µs, - 9.6 - A QRR Reverse Recovered Charge VR = 390 V, TC = 25°C - 0.9 - µC Trr ~~———~~ Reverse Recovery Time IF = 50 A, ~~===~~ - 235 - ns S Softness Factor (tb/ta) dIF/dt = 200 A/µs, - 1.5 - - IQRRRR Reverse Recovery CurrentReverse Recovered Charge TVCR = 125°C = 390V, -- 2.315 -- µAC trr Reverse Recovery Time IF = 50 A, - 110 - ns S Softness Factor (tb/ta) dIF/dt = 1000 A/µs, - 0.8 - - IQRRRR Reverse Recovery CurrentReverse Recovered Charge VTCR = 125°C = 390 V, -- 3.146 -- µAC dIM/dt Maximum di/dt during tb - 1000 - A/µs ~~=—— Be~~ **Thermal Characteristics** RθJC Thermal Resistance Junction to Case - - 0.75 °C/W RθJA Thermal Resistance Junction to Ambient TO-247 - - 30 °C/W ~~— | fF FF~~ 

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**2** 

©2003 Fairchild Semiconductor Corporation FFH50US6  Rev. C1 

## **Typical Performance Curves** 

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100 1000<br>90 | | | [ [| | fF | ———————————<br>175 [o] C<br>80 en An 100 ——————$_—<br>150 [o] C<br>70 | | | | | [Fl =<br>125 [o] C<br>60 ee A 10 _—$<br>50 Jf + 100 [o] C<br>175 [o] C<br>40 | | | 125 [o] C fT 1 eee  75 [o] C<br>30<br>75 [o] C<br>20 LLY 25 [o] C 0.1 —fr<br>10<br> 25 [o] C<br>0 ne Ae 0.01 eeee<br>0.25 0.5 0.75 1.0 1.25 1.5 1.75 2.0 100 200 300 400 500 600<br>VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V)<br>Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage<br>200 225<br>VR = 390V, TC = 125 [o] C VR = 390V, TC = 125 [o] C<br>180<br>ee ee 200 CC<br>160 tb at dIF/dt = 200A/µs, 500A/µs, 800A/µs tb at I F  = 100A, 50A, 25A<br>175<br>140<br>120 oa GN 150 NET<br>100 Hees 125 NSE<br>80<br>100<br>60<br>75<br>40<br>20 50<br>FTL EINE RE ah SSS<br>0 i ta at dI ee F/dt = 200A/µs, 500A/µs, 800A/µs 25 Po ta at IF = 100A, 50 4 A, 25A<br>0 10 20 30 40 50 60 70 80 90 100 0 200 400 600 800 1000 1200<br>IF , FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs)<br>Figure 3. ta and tb Curves vs Forward Current Figure 4. ta and tb Curves vs dIF/dt<br>50 60<br>VR = 390V, TC = 125 [o] C VR = 390V, TC = 125 [o] C<br>40 ope tebe dIF/dt = 800A/µs OL 50<br>40<br>30 TTT it OLE Lee<br>| dIF/dt = 500A/µs A IF = 100A<br>30<br>20 ALT TT] Ke ee IF = 50A<br>at 20 enn<br>dIF/dt = 200A/µs IF = 25A<br>10 ,pssess=== for<br>10<br>Le TT » 4a<br>0 LL EELEEL A 0 Yi | i ff<br>0 10 20 30 40 50 60 70 80 90 100 0 200 400 600 800 1000 1200<br>IF, FORWARD CURRENT (A) dIF /dt, CURRENT RATE OF CHANGE (A/µs)<br>Figure 5. Maximum Reverse Recovery Current vs  Figure 6. Maximum Reverse Recovery Current vs<br>Forward Current dIF/dt<br>, FORWARD CURRENT (A)IF , REVERSE CURRENT (µA)  IR<br>t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns)<br>, MAX REVERSE RECOVERY CURRENT (A) , MAX REVERSE RECOVERY CURRENT (A)<br>IRR IRR<br>**----- End of picture text -----**<br>


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©2003 Fairchild Semiconductor Corporation<br>FFH50US6  Rev. C1<br>**----- End of picture text -----**<br>


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www.fairchildsemi.com 

## **Typical Performance Curves** (Continued) 

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2.4 6<br>VR = 390V, TC = 125 [o] C VR = 390V, TC = 125 [o] C<br>2.2<br>ee 5 To<br>2.0 oo +<br>1.8 4<br>1.6 IF = 100A IF = 100A<br>Ren IF = 50A 3 ie<br>1.4 Ace ee Z| |__| IF = 50A<br>IF = 25A<br>1.2 2<br>IF = 25A<br>1.0<br>SS 1 a<br>0.8 a ——<br>0.6 ee a 0 ttttt<br>0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200<br>dIF/dt, CURRENT RATE OF CHANGE (A/µs) dIF/dt, CURRENT RATE OF CHANGE (A/µs)<br>Figure 7. Reverse Recovery Softness Factor vs  Figure 8. Reverse Recovery Charge vs dIF/dt<br>dIF/dt<br>1400 -22 180<br>f = 1MHZ IF = 50A, VR = 390V, dIF/dt = 600A/usec<br>-24 170<br>1200 von HULME LLIN LEI |<br>-26 160<br>IRM(REC)<br>1000 -28 150<br>NTMI = ESSE<br>-30 140<br>800 AONE UUME ETI LUI a<br>-32 130<br>600 TTI SSUIETEIN LEI —| + NeyA ae +<br>-34 120<br>400 FE A -36 a 110<br>NI -38 wl tRR 100<br>200<br>0 TCSTMM ELE tte =| -40-42 EPSrTor| | IN 9080<br>0.03 0.1 1 10 100 25 50 75 100 125 150 175<br>VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE ( [o] C)<br>Figure 9.  Junction Capacitance vs Reverse Voltage Figure 10. Maximum Reverse Recovery Current<br>and trr vs Case Temperature<br>60<br>50<br>pf | |<br>40 PN]<br>30 | TL<br>wt tf<br>20<br>Ne<br>10 FE EEN<br>0 ft tf f t N<br>115 125 135 145 155 165 175<br>TC, CASE TEMPERATURE  ( [o] C)<br>, REVERSE RECOVERED CHARGE (µC)<br>RR<br>Q<br>S, REVERSE RECOVERY SOFTNESS FACTOR<br>t, RECOVERY TIMES (ns)<br>, JUNCTION CAPACITANCE (pF)CJ  , MAX REVERSE RECOVERY CURRENT (A)<br>IRM(REC)<br>, AVERAGE FORWARD CURRENT  (A)<br>IF(AV)<br>**----- End of picture text -----**<br>


**Figure 9.  Junction Capacitance vs Reverse Voltage** 

**Figure 11.  DC CURRENT DERATING CURVE** 

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**4** 

©2003 Fairchild Semiconductor Corporation FFH50US6  Rev. C1 

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Typical Performance Curves  (Continued)<br>DUTY CYCLE - DESCENDING ORDER<br>0.5<br>1.0 0.2<br>0.1<br>0.05 0.020.01 |ee| {TTT | fegpriiiy = TT ETT TTT TE EE llI<br>Pe eran esa P DM<br>A toe l<br>0.1<br>t1<br>meee A |<br>t2<br>es 200 NOTES:<br>SINGLE PULSE DUTY FACTOR: D = t1/t2<br>PEAK T J  = P DM  x Z θ JA  x R θ JA  + T A<br>0.01 VAAisin) TEINUMM CLITTTT TCT l|<br>10 [-5] 10 [-4] 10 [-3] 10 [-2] 10 [-1] 10 [0] 10 [1]<br>t, RECTANGULAR PULSE DURATION (s)<br>Figure 12.  Normalized Maximum Transient Thermal Impedance<br>Test Circuit and Waveforms<br>VGE AMPLITUDE AND<br>RG CONTROL dIF/dt L<br>t1 AND t2 CONTROL IF IF dIdtF ta trr tb<br>DUT CURRENT<br>RG SENSE 0<br>VGE SU t1 po MOSFET = -+VDD  +:ae 0.25 IIRM RM<br>> t2 ~ <« =—<br>Figure 13.  trr Test Circuit Figure 14. trr Waveforms and Definitions<br>I = 1A<br>L = 40mH<br>R < 0.1 Ω<br>VDD = 50V<br>EAVL = 1/2LI [2]  [VR(AVL)/(VR(AVL) - VDD)]<br>Q1 = IGBT (BVCES > DUT VR(AVL)) L R VAVL<br>CURRENT +<br>SENSE VDD IL IL<br>Q1 I V<br>VDD<br>JL ft DUT - 7 a _ \<br>t0 t1 t2 t —<br>Figure 15.  Avalanche Energy Test Circuit Figure 16. Avalanche Current and Voltage<br>NORMALIZED<br>JA,<br>θ<br>Z<br>THERMAL IMPEDANCE<br>**----- End of picture text -----**<br>


**Figure 16. Avalanche Current and Voltage Waveforms** 

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©2003 Fairchild Semiconductor Corporation FFH50US6  Rev. C1 

**5** 

## **Mechanical Dimensions** 

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TO247-2L<br>**----- End of picture text -----**<br>


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FFH50US60S — STEALTH™ Diode<br>**----- End of picture text -----**<br>


## **Figure 17. TO-247,Molded, 2LD, Jedec Option AB** 

_Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products._ 

_Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-002._ 

©2003 Fairchild Semiconductor Corporation FFH50US6  Rev. C1 

www.fairchildsemi.com 

**6** 

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|AccuPower™<br>AX-CAP®*<br>BitSiC™<br>Build it Now™<br>CorePLUS™<br>CorePOWER™<br>_CROSSVOLT_™<br>CTL™<br>Current Transfer Logic™<br>DEUXPEED®<br>Dual Cool™<br>EcoSPARK®<br>EfficentMax™<br>ESBC™<br>Fairchild®<br>®|F-PFS™<br>FRFET®<br>Global Power ResourceSM<br>GreenBridge™<br>Green FPS™<br>Green FPS™ e-Series™<br>G_max_™<br>GTO™<br>IntelliMAX™<br>ISOPLANAR™<br>Marking Small Speakers Sound Louder<br>and Better™<br>MegaBuck™<br>MICROCOUPLER™<br>MicroFET™<br>MicroPak™<br>MicroPak2™|PowerTrench®<br>PowerXS™<br>Programmable Active Droop™<br>QFET®<br>QS™<br>Quiet Series™<br>RapidConfigure™<br>Saving our world, 1mW/W/kW at a time™<br>SignalWise™<br>SmartMax™<br>SMART START™<br>Solutions for Your Success™<br>SPM®<br>™<br>®|Sync-Lock™<br>®*<br>TinyBoost®<br>TinyBuck®<br>TinyCalc™<br>TinyLogic®<br>TINYOPTO™<br>TinyPower™<br>TinyPWM™<br>TinyWire™<br>TranSiC™<br>TriFault Detect™<br>TRUECURRENT®*<br>SerDes™<br>E SYSTEM<br>GENERAL|
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## **PRODUCT STATUS DEFINITIONS Definition of Terms** 

|**Datasheet Identification**|**Product Status**|**Definition**|
|---|---|---|
|Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.|
|Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.|
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|Obsolete|Not In Production|Datasheet contains specifications on a product that is discontinued by Fairchild<br>Semiconductor. The datasheet is for reference information only.|



Rev. I66 

**7** 

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©2003 Fairchild Semiconductor Corporation FFH50US6  Rev. C1