FFD10UP20S
Fast / Ultrafast Diode, 200 V, 10 A, Single, 1.15 V, 35 ns, 100 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):10A; Diode Configuration:Single; Forward Voltage VF Max:1.15V; Reverse Recovery Time trr Max:35ns; Forward Surge Curr
- No. of Pins: 3 Pin
- Product Range: FFD10
- Qualification: -
- Diode Case Style: TO-252AA
- Diode Configuration: Single
- Forward Voltage Max: 1.15V
- Forward Surge Current: 100A
- Reverse Recovery Time: 35ns
- Average Forward Current: 10A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 200V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 0.601 € |
| Current stock | 10+ |
| Lead time | 30 days |
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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## **FFD10UP20S**
## **10 A, 200 V, Ultrafast Diode**
## **Features**
- Ultrafast Recovery, Trr = 20.8 ns (@ IF = 10 A)
- Max Forward Voltage, VF = 1.15 V (@ TC = 25°C)
- Reverse Voltage : VRRM = 200 V
- Avalanche Energy Rated
## **Description**
The FFD10UP20S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application.
- RoHS Compliant
## **Applications**
- SMPS, Power Switching Circuits
- Output Rectifiers
- Freewheeling Diodes
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4<br>1<br>2<br>TO-252<br>3 (D-PAK)<br>**----- End of picture text -----**<br>
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1,4 Cathode 3. Anode<br>**----- End of picture text -----**<br>
## **Absolute Maximum Ratings** TC = 25[o] C unless otherwise noted
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Symbol Parameter Rating Unit<br>VRRM Peak Repetitive Reverse Voltage 200 V<br>VRWM Working Peak Reverse Voltage 200 V<br>IF(AV) Average Rectified Forward Current @ TC = 115 [o] C 10 A<br>Non-repetitive Peak Surge Current<br>IFSM 60Hz Single Half-Sine Wave 100 A<br>TJ, TSTG Operating and Storage Temperature Range -65 to +175 oC<br>Thermal Characteristics<br>Symbol Parameter Max. Unit<br>ee RJC Maximum Thermal Resistance, Junction to Case ee 3.0 oC/W<br>Package Marking and Ordering Information<br>Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity<br>FFD10UP20S F10UP20S TO-252(D-PAK) Reel 13" Dia N/A 2500<br>eeee ee<br>**----- End of picture text -----**<br>
©2008 Fairchild Semiconductor Corporation FFD10UP20S Rev. 1.7
www.fairchildsemi.com
**1**
## **Electrical Characteristics** TC = 25[o] C unless otherwise noted
|**Symbol**|**Parameter**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF*|Maximum Instantaneous Forward Voltage<br>IF= 10 A<br>IF= 10 A|TC= 25oC<br>TC = 100oC|-<br>-|-<br>-|1.15<br>1.10|V|
|IR*|Maximum Instantaneous Reverse Current<br>@ rated VR|TC= 25oC<br>TC = 100oC|-<br>-|-<br>-|100<br>500|A|
|trr<br>Irr<br>Qrr|Reverse Recovery Time<br>Reverse Recovery Current<br>Reverse Recovery Charge<br>(IF= 10 A, diF/dt = 200 A/s, VR=130 V)||-<br>-<br>-|20.8<br>2.8<br>28.5|-<br>-<br>-|ns<br>A<br>nC|
|trr|Maximum Reverse Recovery Time<br>(IF= 1 A, diF/dt = 100 A/s)||-|-|35|ns|
|WAVL|Avalanche Energy (L = 40 mH)||10|-|-|mJ|
## **Test Circuit and Waveforms**
**Figure 1. Diode Reverse Recovery Test Circuit & Waveform**
**Figure 2. Unclamped Inductive Switching Test Circuit & Waveform**
©2008 Fairchild Semiconductor Corporation FFD10UP20S Rev. 1.7
www.fairchildsemi.com
**2**
## **Typical Performance Characteristics**
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Figure 3. Typical Forward Voltage Drop Figure 4. Typical Reverse Current vs.<br>vs. Forward Current Reverse Voltage<br>50 1000<br>10 100 TC = 100 [o] C<br>TC = 100 [o] C<br>Eaee T C = 25 [o] C aan 10 =<br>1 Pet) =e T C = 25 [o] C<br>1<br>0.1 0.1 Giaeeenee<br>0.0 0.5 1.0 1.5 2.0 10 40 80 120 160 200<br> Forward Voltage, VF [V] Reverse Voltage, VR [V]<br>Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time<br> vs. diF/dt<br>150 40<br>Typical Capacitance IF = 10A<br>at 0V = 129 pF<br>120<br>Ty ou 35<br>TC = 100 [o] C<br>90<br>See 30 St<br>60<br>SIS 25 ane<br>30<br>SHRI H T C = 25 [o] C<br>0 20<br>10 eS -1 100 101 102 ee 50 100 150 200 250<br>Reverse Voltage, VR [V] diF/dt [A/ s]<br>Figure 7. Typical Reverse Recovery Figure 8. Forward Current Derating Curve<br> Current vs. diF/dt<br>6 32<br>I F = 10A<br>28<br>5<br>24<br>4<br>TC = 100 [o] C 20<br>3 ee 16 Eeneee<br>pe OBE<br>DC<br>12<br>2<br>TC = 25 [o] C 8<br>1 Peer | 4 ESET<br>0<br>0 Pert] 25 EEE 50 75 100 125 150<br>50 100 150 200 250<br>diF/dt [A/ s] Case temperature, TC [ [o] C ]<br>]<br>Forward Current, I [A]F [ nAR<br>Reverse Current , I<br> [ns]<br>rr<br>Capacitances , Cj [pF] Reverse Recovery Time, t<br> [A]<br>rr [A]<br>Reverse Recovery Current, I F(AV)<br>Average Forward Current, I<br>**----- End of picture text -----**<br>
©2008 Fairchild Semiconductor Corporation FFD10UP20S Rev. 1.7
www.fairchildsemi.com
**3**
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Mechanical Dimensions<br>**----- End of picture text -----**<br>
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FFD10UP20S<br>—<br> Ultrafast Diode<br>**----- End of picture text -----**<br>
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Figure 9. TO-252 3L (DPAK) - TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB<br>**----- End of picture text -----**<br>
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ISSUE Package drawings C, VARIATION AA . a re provided as a service to customers considering Fairchild components. Drawing 0.61 s may change in any manner A<br>B)C) ALLDIMENSIONING without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to v DIMENSIONS AND ARE TOLERANCINGIN MILLIMETERSPE . R 10° 0 . 45 1 4 1 (1 45. e 54) rify or 4<br>D)ASMESUPPLIER obtainically the warranty therein, which covers Fairchild products. Y14. th 5M DEPENDENT e -2 mo 009 st . recent revision. Package specifications do not expand the terms of Fairc MOLD LOCKING HOLES OR CHAMFERED 0 ' hild’s worldwide terms and con \ i ditions, s yoy pecif-<br>CORNERS OR EDGE PROTRUSION . N \<br> TRIMMED METAL CENTER LEAD IS PRESENT ON FOR NON - DIODE PRODUCTS 1.78<br>F) DIMENSIONS ARE EXCLUSIVE OF BURS, - 14 0 7 0 . 127 MAX<br>MOLD Always visit Fairchild Semiconductor’s online packaging area for the most recent packa FLASH AND TIE BAR EXTRUSIONS. g ; e drawings:<br>G) TOLAND 228P991X239-3N. https://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252 PATTERN RECOMMENDATION IS BASED ON IPC7351A STD -0A3. = (2.90) = SEATING PLANE<br>H) DRAWING NUMBER AND REVISION: MKT-TO252A03REV11 DETAIL A a<br>**----- End of picture text -----**<br>
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©2008 Fairchild Semiconductor Corporation FFD10UP20S Rev. 1.7
www.fairchildsemi.com
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©2008 Fairchild Semiconductor Corporation FFD10UP20S Rev. 1.0
www.fairchildsemi.com
**5**
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