FFB20UP30DNTM
Fast / Ultrafast Diode, 300 V, 20 A, Common Cathode, 1.3 V, 45 ns, 180 A
- Manufacturer: ONSEMI
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- SVHC: No SVHC (15-Jan-2018)
- No. of Pins: 3 Pin
- Product Range: -
- Qualification: -
- Diode Case Style: TO-263AB
- Diode Configuration: Common Cathode
- Forward Voltage Max: 1.3V
- Forward Surge Current: 180A
- Reverse Recovery Time: 45ns
- Average Forward Current: 20A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 300V
| Delivery and price | |
|---|---|
| Units per pack | 800 |
| Price | 1.08 € |
| Current stock | 10+ |
| Lead time | 30 days |
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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [58 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> January 2016<br>**----- End of picture text -----**<br> ## **FFB20UP30DN 20 A, 300 V, Ultrafast Dual Diode** ## **Features** - Ultrafast Recovery, trr = 45 ns (@ IF = 10 A) - Max Forward Voltage, VF = 1.3 V (@ TC = 25°C) - Reverse Voltage : VRRM = 300 V - Avalanche Energy Rated - RoHS Compliant ## **Applications** ## **Description** The FFB20UP30DN is an ultrafast dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder application. - General P urpose - SMPS ,Welder - Free- W heeling D iode for M otor A pplication - Power S witching C ircuits **==> picture [117 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br>**----- End of picture text -----**<br> **==> picture [119 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> 1 TO-263AB/D2-PAK<br>**----- End of picture text -----**<br> **==> picture [113 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> 1. Anode 2. Cathode 3. Anode<br>**----- End of picture text -----**<br> 1.Anode 2.Cathode 3.Anode ## **Absolute Maximum Ratings** (per diode) TC = 25°C unless otherwise noted |**Absolute Maximum Ratings**<br>(per diode) TC = 25°C unless otherwise notedC = 25°C unless otherwise noted= 25°C unless otherwise noted|(per diode) TC = 25°C unless otherwise notedC = 25°C unless otherwise noted= 25°C unless otherwise noted||||||| |---|---|---|---|---|---|---|---| |**Symbol**<br>**Parameter**|||**Ratings**|||**Unit**|| |VRRM<br>Peak Repetitive Reverse Voltage|||300|||V|| |VRWM<br>Working Peak Reverse Voltage|||300|||V|| |VR<br>DC Blocking Voltage|||300|||V|| |IF(AV)<br>Average Rectified Forward Current(per Diode)<br>@TC= 130°C|||10|||A|| |IFSM<br>Non-repetitive Peak Surge Current|||180|||A|| |60Hz Single Half-Sine Wave|||||||| |TJ,TSTG<br>Operating Junction and Storage Temperature|||- 65 to +175|||°C|| |**Thermal Characteristics**|||||||| |**Package Marking and Ordering Information**<br>**Symbol**<br>**Parameter**<br>**Ratings**<br>**Unit**<br>RθJC<br>Maximum Thermal Resistance, Junction to Case<br>2.0<br>°C/W<br>~~—~~<br>~~| —_aona~~|||||||| |**Part Number**<br>**Top Mark**<br>**Package**<br>**Packing Method**<br>**Reel Size**<br>**Tape Width**<br>**Quantity**<br>FFB20UP30DNTM<br>F20UP30DN<br>D2-PAK<br>Reel<br>13" Dia<br>N/A<br>800<br>~~——~~|||||||| ©2006 Fairchild Semiconductor Corporation FFB20UP30DN Rev. 1.9 **1** www.fairchildsemi.com |**Symbol**|**Parameter**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |VF *|IF= 10 A<br>IF= 10 A|TC= 25°C<br>TC= 150°C|-<br>-|-<br>-|1.3<br>1.2|V<br>V| |IR *|VR= 300 V<br>VR= 300 V|TC= 25°C<br>TC= 150°C|-<br>-|-<br>-|1<br>500|µA<br>µA| |Trr|IF=0.5 A, Irr=1 A, VCC= 30 V<br>IF=1 A, diF/dt = 100 A/µs, VR = 30 V IF<br>=10 A, diF/dt = 200 A/µs, VR = 195 V|TC= 25°C<br>TC= 25°C<br>TC= 25°C|-<br>-<br>-|-<br>-<br>-|30<br>35<br>45|ns<br>ns<br>ns| |ta<br>tb<br>Qrr|IF=10 A, diF/dt = 200 A/µs, VR = 195V|TC= 25°C<br>TC= 25°C<br>TC= 25°C|-<br>-<br>-|11<br>13<br>20|-<br>-<br>-|ns<br>ns<br>nC| |WAVL|Avalanche Energy (L = 20 mH)||20|-|-|mJ| * Pulse Test: Pulse Width=300 µ s, Duty Cycle = 2% ## **Test Circuit and Waveforms** **Figure 1. Diode Reverse Recovery Test Circuit & Waveform** **==> picture [313 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 2. Unclamped Inductive Switching Test Circuit & Waveform<br>**----- End of picture text -----**<br> **2** ©2006 Fairchild Semiconductor Corporation FFB20UP30DN Rev. 1.9 www.fairchildsemi.com ## **Typical Performance Characteristics** **Figure 3. Typical Forward Voltage Drop** **Figure 4. Typical Reverse Current** **==> picture [448 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 20 10<br>10<br>1<br>TC = 100oC TC = 100oC<br>TC = 25oC 0.1<br>1<br>TC = 25oC<br>0.01<br>0.1 0.001<br>0.0 0.5 1.0 1.5 2.0 0 50 100 150 200 250 300<br>Forward Voltage , VF [V] Reverse Voltage , VR [V]<br>Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time<br>400 36<br>Typical Capacitance at 0V = 197. 2 pF ITc = 25F = 10AoC<br>32<br>100<br>28<br>10 24<br>0.1 1 10 100 100 200 300 400 500<br>Reverse Voltage , VR [V] diF/dt [A/ µ s]<br>eas Est<br>Figure 7. Typical Reverse Recovery Current Figure 8. Forward Current Deration Curve<br>5 14<br>IF = 10A<br>TC = 25oC 12<br>4<br>10<br>3<br>8<br>DC<br>2 6<br>4<br>1<br>2<br>0 e e r 0 ]<br>100 200 300 400 500 100 110 120 130 140 150<br>diF/dt [A/ µ s] Case Temperature, TC [oC]<br>A]<br>µ<br>Forward Current , I [A]F Reverse Current , I [R<br> [ns]<br>rr<br>T<br>Capacitance , Cj [pF]<br>Reverse Recovery Time ,<br> [A]<br>F(AV)<br> [A]<br>rr<br>Reverse Recovery Current , I<br>Average Rectified Forward Current, I<br>**----- End of picture text -----**<br> **3** ©2006 Fairchild Semiconductor Corporation FFB20UP30DN Rev. 1.9 www.fairchildsemi.com **==> picture [501 x 692] intentionally omitted <==** **----- Start of picture text -----**<br> 10.67 -A- 10.67<br>9.65<br>1.68<br>4 1.00 4<br>9.45<br>9.65<br>8.38<br>10.00<br>1.78 MAX 2<br>2 0.25 MAX<br>PLASTIC BODY 3.80<br>STUB<br>1 3 1 3<br>(2.12) 1.781.14 1.05<br>0.99 0.25 M B A M 5.08<br>0.51<br>LAND PATTERN RECOMMENDATION<br>5.08<br>UNLESS NOTED, ALL DIMS TYPICAL<br>FRONT VIEW - DIODE PRODUCTS VERSION<br>ALTERNATIVE SUPPLIER DETAIL -B-<br>4.83<br>4.06<br>6.22 MIN<br>1.65<br>1.14<br>4 4<br>6.86 MIN<br>15.88<br>14.61 SEE<br>DETAIL A<br>2<br>2<br>3 1 3 1<br>BACK VIEW - DIODE PRODUCTS VERSION NOTES: UNLESS OTHERWISE SPECIFIED<br>ALTERNATIVE SUPPLIER DETAIL A) ALL DIMENSIONS ARE IN MILLIMETERS.<br> B) REFERENCE JEDEC, TO-263, VARIATION AB.<br> C) DIMENSIONING AND TOLERANCING PER<br>GAGE PLANE DIMENSIONING AND TOLERANCING PER<br> ASME Y14.5 - 2009.<br>0.74 D) LOCATION OF THE PIN HOLE MAY VARY<br>0.25 0.33 �� (LOWER LEFT CORNER, LOWER CENTER<br>�� AND CENTER OF THE PACKAGE).<br> E) LANDPATTERN RECOMMENDATION PER IPC<br> TO254P1524X482-3N<br>2.79 0.10 B F) FILENAME: TO263A02REV8<br>1.78 ��<br>0.25 MAX (5.38) ��<br>SEATING<br>PLANE<br>���������������������<br>SCALE: 2X<br>**----- End of picture text -----**<br> ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **N. 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