FFAF60UA60DN
Standard Recovery Diode, 600 V, 60 A, Dual Common Cathode, 2.2 V, 90 ns, 180 A
- Manufacturer: ONSEMI
- Product type: Standard Recovery Rectifier Diodes
- No. of Pins: 3Pins
- Product Range: FFAF6
- Diode Case Style: TO-3PF
- Diode Configuration: Dual Common Cathode
- Forward Voltage Max: 2.2V
- Forward Surge Current: 180A
- Reverse Recovery Time: 90ns
- Average Forward Current: 60A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 600V
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 1.42 € |
| Current stock | 10+ |
| Lead time | 30 days |
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. **==> picture [75 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> November 2014<br>**----- End of picture text -----**<br> ## **FFAF60UA60DN** ## **60 A, 600 V, UItrafast II Dual Diode** ## **Features** - Ultrafast Recovery, Trr < 90ns (@ IF = 30 A) - Max Forward Voltage, VF = 2.2 V (@ TC = 25°C) - 600V Reverse Voltage and High Reliability - Avalanche Energy Rated ## **Description** The FFAF60UA60DN is an ultrafast ll dual diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial application as welder and UPS application. - RoHS Compliant ## **Applications** - Boost Diode in PFC and SMPS - Welder, UPS and Motor Control Application ## **Pin Assignments** **==> picture [126 x 20] intentionally omitted <==** **----- Start of picture text -----**<br> 1 2 3<br> 1. Anode 2. Cathode 3. Anode<br>**----- End of picture text -----**<br> **Absolute Maximum Ratings** Per leg at TC = 25[o] C unless otherwise noted |**Symbol**|**Parameter**|**Parameter**||||**Ratings**|**Unit**| |---|---|---|---|---|---|---|---| |VRRM|Peak Repetitive Reverse Voltage|||||600|V| |VRWM|WorkingPeak Reverse Voltage|||||600|V| |VR|DC BlockingVoltage|||||600|V| |IF(AV)|Average Rectified Forward Current|e Rectified Forward Current@TC= 45oC|C|C||30|A| |IFSM|Non-repetitive Peak Surge Current<br>60Hz Single Half-Sine Wave|le Half-Sine Wave|le Half-Sine Wave|le Half-Sine Wave||180|A| |TJ, TSTG|Operatingand Storage Temperature Range|||||-65 to +175|oC| |**Thermal Characteristics**|**Thermal Characteristics**Per leg at TC= 25oC unless otherwise noted||||||| |**Symbol**|**Parameter**|||||**Ratings**|**Unit**| |RJC|Maximum Thermal Resistance, Junction to Case|Maximum Thermal Resistance, Junction to Case||||2.4|oC/W| |**Package Marking and Ordering Information**|**Package Marking and Ordering Information**||||||| |**Part Number**<br>**Top Mark**<br>**Package**||**Packing Method**||**Reel Size**||**Tape Width**|**Quantity**| |FFAF60UA60DN<br>F60UA60DN<br>TO-3PF||Tube||N/A||N/A|30| ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev.C2 www.fairchildsemi.com **1** |**Electrical Characteristics**|**Electrical Characteristics**Per leg at TC= 25oC unless otherwise noted|**Electrical Characteristics**Per leg at TC= 25oC unless otherwise noted|C unless otherwise noted|||| |---|---|---|---|---|---|---| |**Symbol**|**Parameter**||**Min.**|**Typ.**|**Max.**|**Unit**| |VFM1|IF= 30 A<br>IF= 30 A|TC= 25oC<br>TC= 125oC|-<br>-|-<br>-|2.2<br>2.0|V| |IRM1|VR= 600 V<br>VR= 600 V|TC= 25oC<br>TC= 125oC|-<br>-|-<br>-|100<br>150|A| |trr<br>Irr<br>Qrr|IF= 30 A, diF/dt = 200 A/s|TC= 25oC|-<br>-<br>-|-<br>-<br>-|90<br>8<br>360|ns<br>A<br>nC| |WAVL|Avalanche Energy (L = 40 mH)||20|-|-|mJ| ## **Test Circuit and Waveforms** **==> picture [280 x 10] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. Diode Reverse Recovery Test Circuit & Waveform<br>**----- End of picture text -----**<br> **Figure 2. Unclamped Inductive Switching Test Circuit & Waveform** ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev.C2 www.fairchildsemi.com **2** ## **Typical Performance Characteristics** **==> picture [443 x 603] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. Typical Forward Voltage Drop Figure 4. Typical Reverse Current vs.<br>vs. Forward Current Reverse Voltage<br>100 10<br>TC = 125 [o] C<br>T C = 125 [o] C<br>10 1<br>TC = 25 [o] C TC = 75 [o] C<br>T C = 75 [o] C<br>1 Eay/.aee 0.1<br>TC = 25 [o] C<br>0.1 0.01<br>0.0 0.5 1.0 1.5 2.0 100 200 300 400 500 600<br>ESVanes Forward Voltage, VF [V] Reverse Voltage, VR [V]<br>Figure 5.Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time<br> vs. diF/dt<br>150<br>200 Typical Capacitance IF = 30A TC = 125 [o] C<br>at 0V = 205pF<br>120<br>150<br>LL 90 ==. T C = 75 [o] C<br>100<br>60<br>50 “ane T C = 25 [o] C<br>30<br>0 ress} 0 R=<br>0.1 1 10 100 100 200 300 400<br>Reverse Voltage, VR [V] diF/dt [A/ s]<br>Figure 7. Typical Reverse Recovery Figure 8. Forward Current Derating Curve<br> Current vs. diF/dt<br>12 40<br>TC = 125 [o] C<br>9 TE 30 KEE<br>T C = 75 [o] C<br>6 20<br>T C = 25 [o] C<br>3 A 10 x<br>IF = 30A<br>0 PEE} 0 EEE<br>100 200 300 400 25 50 75 100 125 150<br>diF/dt [A/ s] Case temperature, TC [ [o] C]<br>A]<br><br>Forward Current, I [A]F Reverse Current , I[R<br> [ns]<br>rr<br>Capacitances , Cj [pF]<br>Reverse Recovery Time, t<br> [A]<br> [A]<br>rr<br>F(AV)<br>Reverse Recovery Current, I Average Forward Current, I<br>**----- End of picture text -----**<br> ©2009 Fairchild Semiconductor Corporation FFAF60UA60DN Rev.C2 www.fairchildsemi.com **3** ## **Package Dimensions** ## **Figure 9. TO-3PF 3L - TO3PF, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD** _Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. 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Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. ## **PRODUCT STATUS DEFINITIONS** ## **Definition of Terms** |**Definition of Terms**||| |---|---|---| |**Datasheet Identification**|**Product Status**|**Definition**| |Advance Information|Formative / In Design|Datasheet contains the design specifications for product development. Specifications<br>may change in any manner without notice.| |Preliminary|First Production|Datasheet contains preliminary data; supplementary data will be published at a later<br>date. Fairchild Semiconductor reserves the right to make changes at any time without<br>notice to improve design.| |No Identification Needed|Full Production|Datasheet contains final specifications. 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Updated at February 9, 2023
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