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FF900R17ME7WB11BPSA1
IGBT Module, Dual, 800 A, 1.67 V, 20 mW, 175 °C, Module
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- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoDUAL 3 Series
- IGBT Technology: IGBT7 [Trench Stop]
- IGBT Termination: Press Fit
- Power Dissipation: 20mW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Continuous Collector Current: 800A
- Collector Emitter Voltage Max: 1.7kV
- Collector Emitter Saturation Voltage: 1.67V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 302.91 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**FF900R17ME7W_B11 EconoDUAL[™] 3 module** ## **Final datasheet** ## **EconoDUAL[™] 3 module with TRENCHSTOP[™] IGBT7 and emitter controlled 7 diode and PressFIT / NTC** ## **Features** - Electrical features - VCES = 1700 V - IC nom = 900 A / ICRM = 1800 A - Integrated temperature sensor - High current density - Low V CE,sat - Overload operation up to 175°C - TRENCHSTOP[TM] IGBT7 - VCE,sat with positive temperature coefficient - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder - Mechanical features - High power density - Isolated base plate - PressFIT contact technology - Standard housing - Direct-cooled base plate ## **Potential applications** - High-power converters - Medium-voltage converters - Motor drives - Wind turbines ## **Product validation** - Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 ## **Description** Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2023-11-21 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode, Inverter**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5| |**4**|**NTC-Thermistor**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7| |**5**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8| |**6**|**Circuit diagram**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13| |**7**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| |**8**|**Module label code**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| Datasheet Revision 1.00 2023-11-21 2 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**Table 1**<br>**Insulation coordination**|**Table 1**<br>**Insulation coordination**|**Table 1**<br>**Insulation coordination**|**Table 1**<br>**Insulation coordination**|**Table 1**<br>**Insulation coordination**| |---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|**Unit**| |Isolation test voltage|_V_ISOL|RMS, f = 50 Hz,_t_= 1 min|3.4|kV| |Isolation test voltage NTC|_V_ISOL(NTC)|RMS, f = 50 Hz,_t_= 1 min|3.4|kV| |Material of module<br>baseplate|||Cu|| |Internal isolation||basic insulation (class 1, IEC 61140)|Al2O3|| |Creepage distance|_d_Creep|terminal to heatsink|15.0|mm| |Creepage distance|_d_Creep|terminal to terminal|13.0|mm| |Clearance|_d_Clear|terminal to heatsink|12.5|mm| |Clearance|_d_Clear|terminal to terminal|10.0|mm| |Comparative tracking<br>index|_CTI_||> 200|| |Relative thermal index<br>(electrical)|_RTI_|housing|140|°C| |**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**|**Table 2**<br>**Characteristic values**||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Pressure drop in cooling<br>circuit|Δ_p_|Δ_V/_Δ_t_= 10.0 dm³/min, 50% water / 50%<br>ethylenglycol,_T_F= 60 °C|||65||mbar| |Maximum pressure in<br>cooling circuit|_p_|||||3|bar| |Stray inductance module|_L_sCE||||20||nH| |Module lead resistance,<br>terminals - chip|_R_CC'+EE'|TF= 25 °C, per switch|||0.8||mΩ| |Storage temperature|_T_stg|||-40||125|°C| |Mounting torque for<br>module mounting|_M_|- Mounting according to<br>valid application note|M5, Screw|3||6|Nm| |Terminal connection<br>torque|_M_|- Mounting according to<br>valid application note|M6, Screw|3||6|Nm| |Weight|_G_||||345||g| ## **2 IGBT, Inverter** **Table 3 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Collector-emitter voltage|_V_CES||_T_vj= 25 °C|1700|V| **(table continues...)** Datasheet Revision 1.00 2023-11-21 3 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT, Inverter** |**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|**Table 3**<br>**(continued) Maximum rated values**|||| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Continuous DC collector<br>current|_I_CDC|_T_vj max= 175 °C|_T_F= 25 °C|800|A| |Maximum RMS module DC-<br>terminal current|_I_tRMS||_T_Terminal= 90 °C,<br>_T_C= 90 °C|580|A| ||||_T_Terminal= 105 °C,<br>_T_C= 90 °C|565|| |Repetitive peak collector<br>current|_I_CRM|tplimited by Tvj op||1800|A| |Gate-emitter peak voltage|_V_GES|||±20|V| |**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|**Table 4**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CE sat|_I_C= 900 A,_V_GE= 15 V|_T_vj= 25 °C||1.67|1.85|V| ||||_T_vj= 125 °C||1.95||| ||||_T_vj= 150 °C||2.02||| ||||_T_vj= 175 °C||2.08||| |Gate threshold voltage|_V_GEth|_I_C= 18.8 mA, VCE= VGE,_T_vj= 25 °C||5.15|5.80|6.45|V| |Gate charge|_Q_G|_V_GE= ±15 V,_V_CC= 900 V|||8.59||µC| |Internal gate resistor|_R_Gint|_T_vj= 25 °C|||0.28||Ω| |Input capacitance|_C_ies|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||93.8||nF| |Reverse transfer<br>capacitance|_C_res|_f_= 100 kHz,_T_vj= 25 °C,_V_CE= 25 V,_V_GE= 0 V|||0.33||nF| |Collector-emitter cut-of<br>current|_I_CES|_V_CE= 1700 V,_V_GE= 0 V|_T_vj= 25 °C|||35|µA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V,_T_vj= 25 °C||||100|nA| |Turn-on delay time<br>(inductive load)|_t_don|_I_C= 900 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 0.33 Ω|_T_vj= 25 °C||0.174||µs| ||||_T_vj= 125 °C||0.195||| ||||_T_vj= 150 °C||0.202||| ||||_T_vj= 175 °C||0.207||| |Rise time (inductive load)|_t_r|_I_C= 900 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gon= 0.33 Ω|_T_vj= 25 °C||0.054||µs| ||||_T_vj= 125 °C||0.060||| ||||_T_vj= 150 °C||0.061||| ||||_T_vj= 175 °C||0.065||| **(table continues...)** Datasheet Revision 1.00 2023-11-21 4 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|**Table 4**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of delay time<br>(inductive load)|_t_dof|_I_C= 900 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 3 Ω|_T_vj= 25 °C||0.738||µs| ||||_T_vj= 125 °C||0.828||| ||||_T_vj= 150 °C||0.850||| ||||_T_vj= 175 °C||0.865||| |Fall time (inductive load)|_t_f|_I_C= 900 A,_V_CC= 900 V,<br>_V_GE= ±15 V,_R_Gof= 3 Ω|_T_vj= 25 °C||0.202||µs| ||||_T_vj= 125 °C||0.432||| ||||_T_vj= 150 °C||0.504||| ||||_T_vj= 175 °C||0.573||| |Turn-on energy loss per<br>pulse|_E_on|_I_C= 900 A,_V_CC= 900 V,<br>_L_σ= 25 nH,_V_GE= ±15 V,<br>_R_Gon= 0.33 Ω, di/dt =<br>12300 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||54.6||mJ| ||||_T_vj= 125 °C||138||| ||||_T_vj= 150 °C||172||| ||||_T_vj= 175 °C||205||| |Turn-of energy loss per<br>pulse|_E_of|_I_C= 900 A,_V_CC= 900 V,<br>_L_σ= 25 nH,_V_GE= ±15 V,<br>_R_Gof= 3 Ω, dv/dt = 3800<br>V/µs (Tvj= 175 °C)|_T_vj= 25 °C||163||mJ| ||||_T_vj= 125 °C||245||| ||||_T_vj= 150 °C||271||| ||||_T_vj= 175 °C||297||| |SC data|_I_SC|_V_GE= 15 V,_V_CC= 1000 V,<br>VCEmax=VCES-LsCE*di/dt|_t_P≤ 8 µs,<br>_T_vj=150 °C||2950||A| ||||_t_P≤ 6 µs,<br>_T_vj=175 °C||2850||| |Thermal resistance,<br>junction to cooling fluid|_R_thJF|per IGBT,Δ_V/_Δ_t_= 10.0 dm³/min, 50% water /<br>50% ethylenglycol,_T_F= 60 °C|||0.0867||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| ## _**Note** :_ _T_ vjop _> 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ **3 Diode, Inverter** **Table 5 Maximum rated values** |**Parameter**|**Symbol**|**Note or test condition**|**Note or test condition**|**Values**|**Unit**| |---|---|---|---|---|---| |Repetitive peak reverse<br>voltage|_V_RRM||_T_vj= 25 °C|1700|V| |**(table continues...)**|||||| Datasheet Revision 1.00 2023-11-21 5 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode, Inverter** |**Table 5**<br>**(continued) Maximum rated values**|**Table 5**<br>**(continued) Maximum rated values**|**Table 5**<br>**(continued) Maximum rated values**|||| |---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Continuous DC forward<br>current|_I_F|||900|A| |Repetitive peak forward<br>current|_I_FRM|_t_P= 1 ms||1800|A| |I2t - value|_I_2_t_|_t_P= 10 ms,_V_R= 0 V|_T_vj= 125 °C|40200|A²s| ||||_T_vj= 175 °C|27000|| |**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|**Table 6**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Forward voltage|_V_F|_I_F= 900 A,_V_GE= 0 V|_T_vj= 25 °C||2.34|2.50|V| ||||_T_vj= 125 °C||2.24||| ||||_T_vj= 150 °C||2.18||| ||||_T_vj= 175 °C||2.11||| |Peak reverse recovery<br>current|_I_RM|_V_CC= 900 V,_I_F= 900 A,<br>_V_GE= -15 V, -diF/dt =<br>12900 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||992||A| ||||_T_vj= 125 °C||1130||| ||||_T_vj= 150 °C||1140||| ||||_T_vj= 175 °C||1170||| |Recovered charge|_Q_r|_V_CC= 900 V,_I_F= 900 A,<br>_V_GE= -15 V, -diF/dt =<br>12900 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||119||µC| ||||_T_vj= 125 °C||210||| ||||_T_vj= 150 °C||240||| ||||_T_vj= 175 °C||272||| |Reverse recovery energy|_E_rec|_V_CC= 900 V,_I_F= 900 A,<br>_V_GE= -15 V, -diF/dt =<br>12900 A/µs (Tvj= 175 °C)|_T_vj= 25 °C||86||mJ| ||||_T_vj= 125 °C||141||| ||||_T_vj= 150 °C||159||| ||||_T_vj= 175 °C||176||| |Thermal resistance,<br>junction to cooling fluid|_R_thJF|per diode,ΔV/Δt = 10.0 dm³/<br>min, cooling fluid = 50% water / 50%<br>ethylenglycol, TF= 60 °C|||0.135||K/W| |Temperature under<br>switching conditions|_T_vj op|||-40||175|°C| _**Note** : T_ vjop _> 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14._ Datasheet Revision 1.00 2023-11-21 6 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **4 NTC-Thermistor** ## **4 NTC-Thermistor** |**4**<br>**NTC-Thermistor**|**4**<br>**NTC-Thermistor**|**4**<br>**NTC-Thermistor**||||| |---|---|---|---|---|---|---| |**Table 7**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Rated resistance|_R_25|_T_NTC= 25 °C||5||kΩ| |Deviation of R100|Δ_R/R_|_T_NTC= 100 °C,_R_100= 493 Ω|-5||5|%| |Power dissipation|_P_25|_T_NTC= 25 °C|||20|mW| |B-value|_B_25/50|R2= R25exp[B25/50(1/T2-1/(298,15 K))]||3375||K| |B-value|_B_25/80|R2= R25exp[B25/80(1/T2-1/(298,15 K))]||3411||K| |B-value|_B_25/100|R2= R25exp[B25/100(1/T2-1/(298,15 K))]||3433||K| _**Note** : For an analytical description of the NTC characteristics please refer to AN2009-10, chapter 4._ Datasheet Revision 1.00 2023-11-21 7 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **5 Characteristics diagrams** **5 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Output characteristic (typical), IGBT, Inverter** IC = f(VCE) VGE = 15 V **==> picture [245 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> Output characteristic field (typical), IGBT, Inverter<br>IC = f(VCE)<br>**----- End of picture text -----**<br> ## T = 175 °C vj **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 1800 1800<br>1500 1500<br>1200 1200<br>900 900<br>600 600<br>300 300<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0<br>Transfer characteristic (typical), IGBT, Inverter Gate charge characteristic (typical), IGBT, Inverter<br>IC = f(VGE) VGE = f(QG)<br>VCE = 20 V IC = 900 A, Tvj = 25 °C<br>1800 15<br>13<br>11<br>1500<br>9<br>7<br>1200 5<br>3<br>1<br>900<br>-1<br>-3<br>600 -5<br>-7<br>-9<br>300<br>-11<br>-13<br>0 -15<br>4 5 6 7 8 9 10 11 12 13 14 0 2 4 6 8 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-11-21 8 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **Capacity characteristic (typical), IGBT, Inverter** C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>1<br>0.1<br>0.01<br>0 10 20 30 40 50 60 70 80 90 100<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, Inverter** t = f(RG) IC = 900 A, VCC = 900 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 1 2 3 4<br>**----- End of picture text -----**<br> ## **Switching times (typical), IGBT, Inverter** t = f(IC) RGoff = 3 Ω, RGon = 0.33 Ω, VCC = 900 V, VGE = ± 15 V, Tvj = 175 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>1<br>0.1<br>0.01<br>0 300 600 900 1200 1500 1800<br>**----- End of picture text -----**<br> **Voltage slope (typical), IGBT, Inverter** dv/dt = f(RG) IC = 900 A, VCE = 900 V, VGE = ±15 V, Tvj = 25 °C **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 12<br>11<br>10<br>9<br>8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>0 1 2 3 4<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-11-21 9 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **Switching losses (typical), IGBT, Inverter** ## E = f(IC) RGoff = 3 Ω, RGon = 0.33 Ω, VCC = 900 V, VGE = ± 15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0 300 600 900 1200 1500 1800<br>**----- End of picture text -----**<br> ## **Reverse bias safe operating area (RBSOA), IGBT, Inverter** ## **Switching losses (typical), IGBT, Inverter** E = f(RG) IC = 900 A, VCC = 900 V, VGE = ± 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>800<br>600<br>400<br>200<br>0<br>0 1 2 3 4<br>**----- End of picture text -----**<br> **Transient thermal impedance, IGBT, Inverter** Zth = f(t) IC = f(VCE) RGoff = 3 Ω, VGE = ±15 V, Tvj = 175 °C **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2200<br>2000<br>1800<br>1600<br>1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0 200 400 600 800 1000 1200 1400 1600 1800<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1<br>0.01<br>0.001<br>0.001 0.01 0.1 1 10<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-11-21 10 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** ## **Thermal impedance, IGBT, Inverter Forward characteristic (typical), Diode, Inverter** RthJF = f(ΔV/Δt) IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.12<br>0.11<br>0.10<br>0.09<br>0.08<br>0.07<br>2 3 4 5 6 7 8 9 10 11 12 13 14<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, Inverter** Erec = f(IF) RGon = 0.33 Ω, VCE = 900 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1800<br>1500<br>1200<br>900<br>600<br>300<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5<br>**----- End of picture text -----**<br> **Switching losses (typical), Diode, Inverter** Erec = f(RG) VCE = 900 V, IF = 900 A **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 250 250<br>225 225<br>200 200<br>175 175<br>150 150<br>125 125<br>100 100<br>75 75<br>50 50<br>25 25<br>0 0<br>0 300 600 900 1200 1500 1800 0 1 2 3 4<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-11-21 11 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **5 Characteristics diagrams** **==> picture [223 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> Transient thermal impedance, Diode, Inverter<br>Zth = f(t)<br>**----- End of picture text -----**<br> **==> picture [177 x 26] intentionally omitted <==** **----- Start of picture text -----**<br> Thermal impedance, Diode, Inverter<br>RthJF = f(ΔV/Δt)<br>**----- End of picture text -----**<br> **==> picture [540 x 552] intentionally omitted <==** **----- Start of picture text -----**<br> 1 0.17<br>0.16<br>0.1<br>0.15<br>0.14<br>0.01<br>0.13<br>0.001 0.12<br>0.001 0.01 0.1 1 10 2 3 4 5 6 7 8 9 10 11 12 13 14<br>Temperature characteristic (typical), NTC-Thermistor<br>R = f(TNTC)<br>100000<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2023-11-21 12 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **6 Circuit diagram** **==> picture [167 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Circuit diagram<br>**----- End of picture text -----**<br> **==> picture [236 x 230] intentionally omitted <==** **----- Start of picture text -----**<br> 4<br>9<br>T1<br>D1<br>7<br>6<br>8<br>NTC � 10,11<br>5<br>T2<br>D2<br>1<br>2<br>3 W00194210.00<br>**----- End of picture text -----**<br> **Figure 1** Datasheet Revision 1.00 2023-11-21 13 **FF** ~~**900R**~~ **17ME7W_B11 Eco** ~~**noD**~~ **U** ~~**A**~~ **L** ~~**[™] 3 module**~~ **7 Package o** ~~**utlines**~~ **7 Package outlines** **==> picture [105 x 47] intentionally omitted <==** **==> picture [338 x 608] intentionally omitted <==** **----- Start of picture text -----**<br> � Terminals1 A D E Kennzeichnungsfl�cheLabel-side<br>3,05 A<br>152 � 0,5<br>E<br>C 122 � 0,5<br>� 0,4 A D E � � 0,4 A B C<br>9 8 7 6 5<br>28,75<br>25<br>10 4 � � 0,6 A D E<br>4x<br>11<br>Y<br>X 0<br>11 3<br>(min. 100,0) 11<br>(min. 78,0)<br>25<br>28,75<br>B 55 1 screw recommendation: 2Schraubenempfehlung: ( � 5,5) � 2x 0,4 A D E<br>EJOT PT K 25x10 WN1451<br>D EJOT DELTA PT 25x10 WN5451<br>� � 0,4 A B C<br>Wave-Fl�che<br>wave-area<br>18,05<br>10,05<br>0<br>10,05<br>18,05<br>M<br>7x � 1 +- 0,090,06 � 0,05 M-M 4x � 2,8 +-00,1 � 0,4 M-M<br>7x 4x<br>29,2<br>28,75<br>Y<br>X 0<br>28,75<br>29,2<br>- PCB: Durchmesser des metallisierten Loches<br>- PCB: diameter of plated hole<br>( � 5,5)<br>120,8305<br>( �<br>5,5)<br>24,444�<br>(3,5)<br>(20,5) 17<br>(6,5)<br>6,4)<br>� (<br>0,2 � 0,2 �<br>62 62,5 (min. 38,0) (min. 20,0)<br>25 4x M6<br>5,5)<br>� (<br>68,5 55 47,25 0 47,25 55 68,5<br>42,8 39,8 0 39,8 42,8<br>47,25 40 17,15 13,33 0 9,53 13,34 36,19 40 47,25<br>W00191760.01<br>**----- End of picture text -----**<br> ## **Figure 2** Datasheet Revision 1.00 2023-11-21 14 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **==> picture [105 x 47] intentionally omitted <==** ## **8 Module label code** ## **8 Module label code** |**Module label code**|**Module label code**|**Module label code**|**Module label code**|**Module label code**| |---|---|---|---|---| |Code format|Data Matrix||Barcode Code128|| |Encoding|ASCII text||Code Set A|| |Symbol size|16x16||23 digits|| |Standard|IEC24720 and IEC16022||IEC8859-1|| |||||| |Code content|_Content_<br>Module serial number<br>Module material number<br>Production order number<br>Date code (production year)<br>Date code (production week)|_Digit_<br>1 – 5<br>6 - 11<br>12 - 19<br>20 – 21<br>22 – 23||_Example_<br>71549<br>142846<br>55054991<br>15<br>30| |Example|71549142846550549911530<br>71549142846550549911530|||| ## **Figure 3** Datasheet Revision 1.00 2023-11-21 15 **FF900R17ME7W_B11 EconoDUAL[™] 3 module** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |1.00|2023-11-21|Initial version| Datasheet Revision 1.00 2023-11-21 16 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2023-11-21 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2023 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABI486-001** Infineon Technologies in customer’s applications. ## 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Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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