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FF900R12ME7PB11BPSA1
IGBT Module, Dual, 875 A, 1.5 V, 20 mW, 175 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- SVHC: No SVHC (25-Jun-2025)
- Product Range: EconoDUAL 3 Series
- IGBT Technology: IGBT 7
- IGBT Termination: Press Fit
- Power Dissipation: 20mW
- IGBT Configuration: Dual
- Transistor Mounting: Panel
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Continuous Collector Current: 875A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 134.16 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## FF900R12ME7P_B11
VCES = 1200V IC nom = 900A / ICRM = 1800A
- Hochleistungsumrichter
- • Hybrid-Nutzfahrzeuge • Motorantriebe • Servoumrichter • USV-Systeme
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- Trenchstop[TM]
- • VCEsat mit
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- Standardgehäuse
- Thermisches Interface Material bereits aufgetragen
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- Trenchstop[TM]
- • VCEsat with
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**Digit**
Datasheet www.infineon.com
2020-04-24
FF900R12ME7P_B11
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## **Vorläufige�Daten Preliminary�Data**
|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**|**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**||||||
|---|---|---|---|---|---|---|
|Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage|Tvj= 25°C|VCES|1200|||V|
|ImplementierterKollektor-Strom<br>Implementedcollectorcurrent||ICN|900|||A|
|Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent|TH= 45°C, Tvj max= 175°C|ICDC|875|||A|
|PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent|tP= 1 ms|ICRM|1800|||A|
|Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage||VGES|+/-20|||V|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage|IC= 900 A<br>VGE= 15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VCE sat||1,50<br>1,65<br>1,75|1,80|V<br>V<br>V|
|Gate-Schwellenspannung<br>Gatethresholdvoltage|IC= 18,0 mA, VCE= VGE, Tvj= 25°C|VGEth|5,15|5,80|6,45|V|
|Gateladung<br>Gatecharge|VGE= -15 / 15 V, VCE= 600 V|QG||14,3||µC|
|InternerGatewiderstand<br>Internalgateresistor|Tvj= 25°C|RGint||0,5||Ω|
|Eingangskapazität<br>Inputcapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cies||122||nF|
|Rückwirkungskapazität<br>Reversetransfercapacitance|f = 100 kHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V|Cres||0,72||nF|
|Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent|VCE= 1200 V, VGE= 0 V<br>Tvj= 25°C|ICES|||0,1|mA|
|Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent|VCE= 0 V, VGE= 20 V, Tvj= 25°C|IGES|||100|nA|
|Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td on||0,41<br>0,46<br>0,49||µs<br>µs<br>µs|
|Anstiegszeit,induktiveLast<br>Risetime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tr||0,10<br>0,11<br>0,12||µs<br>µs<br>µs|
|Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|td off||0,55<br>0,63<br>0,69||µs<br>µs<br>µs|
|Fallzeit,induktiveLast<br>Falltime,inductiveload|IC= 900 A, VCE= 600 V<br>VGE= -15 / 15 V<br>RGoff= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|tf||0,11<br>0,23<br>0,33||µs<br>µs<br>µs|
|EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse|IC= 900 A, VCE= 600 V, Lσ= 25 nH<br>di/dt = 6200 A/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGon= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eon||89,0<br>138<br>170||mJ<br>mJ<br>mJ|
|AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse|IC= 900 A, VCE= 600 V, Lσ= 25 nH<br>du/dt = 3000 V/µs (Tvj= 175°C)<br>VGE= -15 / 15 V, RGoff= 0,51Ω<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Eoff||89,0<br>130<br>158||mJ<br>mJ<br>mJ|
|Kurzschlußverhalten<br>SCdata|VGE ≤15 V, VCC= 800 V<br>VCEmax= VCES-LsCE·di/dt<br>Tvj= 150°C<br>Tvj= 175°C<br>tP ≤8 µs,<br>tP ≤6 µs,|ISC||3200<br>3000||A<br>A|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,0716|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
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## **Vorläufige�Daten Preliminary�Data**
## **Diode,�Wechselrichter�/�Diode,�Inverter**
## **Höchstzulässige�Werte�/�Maximum�Rated�Values**
|PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200|1200|V|
|---|---|---|---|---|---|---|
|Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|900|||A|
|PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1800|||A|
|Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 175°C|I²t|35000<br>30000<br>|||A²s<br>A²s|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Durchlassspannung<br>Forwardvoltage|IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|VF||1,80<br>1,70<br>1,65|2,05|V<br>V<br>V|
|Rückstromspitze<br>Peakreverserecoverycurrent|IF= 900 A, - diF/dt = 6200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|IRM||389<br>511<br>578||A<br>A<br>A|
|Sperrverzögerungsladung<br>Recoveredcharge|IF= 900 A, - diF/dt = 6200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Qr||65,0<br>127<br>171||µC<br>µC<br>µC|
|AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 900 A, - diF/dt = 6200 A/µs (Tvj=175°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 175°C|Erec||29,0<br>52,0<br>68,0||mJ<br>mJ<br>mJ|
|Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||0,126|K/W|
|TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||175|°C|
## **NTC-Widerstand�/�NTC-Thermistor**
## **Charakteristische�Werte�/�Characteristic�Values**
|**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>||||||
|---|---|---|---|---|---|---|
|**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.||
|Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ|
|AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%|
|Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW|
|B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K|
|B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K|
|B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K|
Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note.
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## **Vorläufige�Daten Preliminary�Data**
## **Modul�/�Module**
|**Modul/Module**|||||||
|---|---|---|---|---|---|---|
|Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min|VISOL|3,4<br>|||kV|
|MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu||||
|InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3||||
|Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||15,0<br>13,0<br>|||mm|
|Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||12,5<br>10,0<br>|||mm|
|VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 200|||
|RelativerTemperaturindex(elektr.)<br>RTIElec.|Gehäuse<br>housing|RTI|140|||°C|
||||min.|typ.|max.||
|Modulstreuinduktivität<br>Strayinductancemodule||LsCE||20||nH|
|Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||0,80||mΩ|
|Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C|
|Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C|
|Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm|
|Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM6-Montagegem.gültigerApplikationsschrift<br>ScrewM6-Mountingaccordingtovalidapplicationnote|M|3,0|-|6,0|Nm|
|Gewicht<br>Weight||G||345||g|
Tvjop > 150 °C ist nur im Überlastbetrieb zulässig. Detailierte Angaben sind AN 2018-14 zu entnehmen.
Tvjop > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14. Lagerung und Transport von Modulen mit TIM => siehe AN2012-07 Storage and shipment of modules with TIM => see AN2012-07
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## **Vorläufige�Daten Preliminary�Data**
**Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V
**Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�175°C
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1800 1800<br>Tvj = 25°C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>Tvj = 175°C VGE = 15V<br>VGE = 13V<br>1500 1500 VGE = 11V<br>VGE = 9V<br>1200 1200<br>900 900<br>600 600<br>300 300<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br>
**Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V
## **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC)
VGE�=�±15�V,�RGon�=�0.51� Ω ,�RGoff�=�0.51� Ω ,�VCE�=�600�V
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1800 1000<br>Tvj = 25°C Eon, Tvj = 125°C<br>Tvj = 125°C Eon, Tvj = 175°C<br>Tvj = 175°C 900 E off , T vj = 125°C<br>Eoff, Tvj = 175°C<br>1500<br>800<br>700<br>1200<br>600<br>900 500<br>400<br>600<br>300<br>200<br>300<br>100<br>0 0<br>4 5 6 7 8 9 10 11 12 13 14 0 300 600 900 1200 1500 1800<br>VGE [V] IC [A]<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br>
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Eon =f(R),E G off =f(R G) tdon =f(l),t=f(l),t C r C doff =f(l),t=f(l C f C)<br>VGE =+15V,1 C =900A,V CE =600V VGE =415V,R Gon =051 Ω ,R Goff =051 Ω ,V CE =600V<br>600 10<br>Fe<br>tdon<br>550 t r<br>t doff<br>t f<br>/ 7, Ef<br>500<br>4 i<br>450 7 7 ee ee [ee] ee<br>400 1<br>/777 pe.SALes<br>350 7 Po a enn nnn]<br>a<br>300<br>— —_—<br>250 _— T ~<br>— [aa]<br>200 0,1<br>ey ——————<br>150 Seer Lhe es ><br>100 Eon, Tvj = 125 ° C<br>Eon, Tvj = 175°C<br>50 E E off off , T , T vj vj = 125°C = 175 ° C<br>0 0,01<br>0 1 2 3 4 5 6 0 300 600 900 1200 1500 1800<br>RG [ Ω ] IC [A]<br>E [mJ] t [µs]<br>**----- End of picture text -----**<br>
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tdon =f{(R),t=f(R),t G r G doff =f(R),t=f(R G f G) dv/dt= f(R G)<br>VGE =+15V,1 C =900A,V CE =600V VGE =+15V, | c =900A,V CE =600V,T vj = 25°C<br>10 a a a a 7<br>a tdon ee dv/dt-on at 1/10 × Ic<br>t r dv/dt-off at Ic<br>| a<br>t doff<br>———— t f 6<br>5<br>\<br>1<br>--a \\<br>4<br>3 ><br>eaee PAK<br>7 N<br>NX<br>0,1 N<br> N<br>2 N<br>==—=———— ~N; |<br>1<br>0,01 0<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6<br>RG [ Ω ] RG [Ohm]<br>t [µs]<br>dv/dt [V/ns]<br>**----- End of picture text -----**<br>
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## **(RBSOA)**
## ZthJH
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1<br>ZthJH : IGBT<br>ee tt<br>0,1<br>PEa<br>0,01<br>Pe — HHHE<br>e720 VA<br>i: 1 2 3 4<br>ri[K/W]: 0,0039 0,0259 0,0292 0,0126<br>τ i[s]: 0,00215 0,0428 0,277 1,702<br>0,001 UIEEE|<br>0,001 0,01 0,1 1 10<br>t [s]<br> [K/W]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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IC =f(V CE)<br>VGE ee V,R Goff =0.51 Ω ,T vj =175°C<br>2200<br>IC, Modul<br>2000 IC, Chip<br>1800<br>1600<br>1400<br>SEE<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>0 200 400 600 800 1000 1200 1400<br>VCE [V]<br> [A]<br>IC<br>**----- End of picture text -----**<br>
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C=f(V CE) VGE =f(Q G)<br>VGE i OV,T vj = 25°C, f = 100kHz IC = 905 A, T vj =25°C<br>1000 15<br>| CC ies oes a a 13 VCE = 600 V<br>C res<br>=_=======—=<br>11<br>100 9<br>BEE EEE<br>7<br>=========—<br>5<br>10 3<br>SS ee ee<br>ee -11<br>ee<br>=<br>1 SahaPSseo -3<br>-5<br>-7<br>0,1 sanmenenen -9<br>-11<br>-13<br>0,01 HEE EEE eer -15<br>0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15<br>VCE [V] QG [µC]<br> [V]<br>GE<br>C [nF] V<br>**----- End of picture text -----**<br>
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IF =f(V F) Erec =fil F)<br>RGon =0.51 Ω ,V CE =600V<br>1800 80<br>Tvj = 25°C / [/] Erec, Tvj = 125°C<br>Tvj = 125°C | Erec, Tvj = 175°C<br>Tvj = 175°C i/i 70<br>/<br>1500<br>/ [/]<br>/<br>/ 60<br>///<br>/ /<br>1200 /<br>i/ /<br>// 50 /<br>// [/]<br>i /<br>900 ‘] 1 40 7<br>//<br>/ /<br>1/ /<br>// 30<br>7 7<br>600<br>20<br>300<br>10<br>0 aan 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 0 300 600 900 1200 1500 1800<br>VF [V] IF [A]<br>Schaltverluste Diode, Wechselrichter (typisch) Transienter Warmewiderstand Diode, Wechselrichter<br>switching losses Diode, Inverter (typical) transient thermal impedance Diode, Inverter<br>Erec =f(R G) ZthJH =f (t)<br>IF =900A,V CE =600V<br>80 1 aee<br>Erec, Tvj = 125°C ZthJH : Diode<br>Erec, Tvj = 175°C<br>HE | HEHeee<br>70<br>\<br>\<br>60 \<br>\<br>\<br>\ 0,1<br>50<br>‘<br> N<br>} — Alli=<br>40<br>30<br>0,01<br>20<br>10 i: 1 2 3 4<br>ri[K/W]: 0,0075 0,0453 0,0511 0,0221<br>τ i[s]: 0,00215 0,0428 0,277 1,702<br>0 0,001<br>0 1 2 3 4 5 6 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br> [A]<br>IF E [mJ]<br> [K/W]<br>E [mJ]<br>thJH<br>Z<br>**----- End of picture text -----**<br>
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## **Vorläufige�Daten Preliminary�Data**
**NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(TNTC)
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100000<br>Rtyp<br>10000<br>1000<br>100<br>10<br>0 25 50 75 100 125 150 175<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br>
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## **Schaltplan�/�Circuit�diagram**
## **Vorläufige�Daten Preliminary�Data**
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## **Gehäuseabmessungen�/�Package�outlines**
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j Terminals1 A D E KennzeichnungsflächeLabel-side<br>A<br>152±0,5<br>C 122±0,5 E<br>j 0,4 A D E j n 0,4 A B C<br>9 8 7 6 5<br>28,75<br>25<br>10 4 j 4x n 0,6 A D E<br>11<br>Y<br>X 0<br>11 3<br> (min. 100,0)<br> (min. 78,0) 11<br>25<br>28,75<br>B 55 1 screw recommendation: 2Schraubenempfehlung: ( n 5,5) j 2x 0,4 A D E<br>D EJOT PT K 25x10 WN1451<br>EJOT DELTA PT 25x10 WN5451<br>j n 0,4 A B C<br>120,8305<br>( n 5,5)<br>( n 5,5)<br>24,444°<br>(3,5)<br>(20,5) 17<br>(6,5)<br>n 6,4)(<br>62,5±0,2 62±0,2 (min. 38,0) (min. 20,0)<br>25 4x M6<br>n 5,5)(<br>68,5 55 47,25 0 47,25 55 68,5<br>**----- End of picture text -----**<br>
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restricted area for Thermal Interface Material
10
V�2.0 2020-04-24
Datasheet
## **Trademarks**
## **WARNHINWEIS**
## **WARNINGS**
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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