![FF900R12IE4PBOSA1 — IGBT Module, Dual [Half Bridge], 900 A, 1.7 V, 5.1 kW, 150 °C, Module](/media/F/1/A/6EE2194ACEED0A1F.webp)
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FF900R12IE4PBOSA1
IGBT Module, Dual [Half Bridge], 900 A, 1.7 V, 5.1 kW, 150 °C, Module
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:900A; Collector Emitter Saturation Voltage Vce(on):1.7V; Power Dissipation Pd:5.1kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transist
- SVHC: No SVHC (25-Jun-2025)
- Product Range: PrimePACK 2
- IGBT Technology: IGBT 4 [Trench/Field Stop]
- IGBT Termination: Stud
- Power Dissipation: 5.1kW
- IGBT Configuration: Dual [Half Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 900A
- Power Dissipation Pd: 5.1kW
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 900A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.7V
- Collector Emitter Saturation Voltage Vce(on): 1.7V
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 426.26 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
IGBT-Modul IGBT-Module ## FF900R12IE4P VCES = 1200V IC nom = 900A / ICRM = 1800A - Hochleistungsumrichter - • Motorantriebe • Windgeneratoren - - - - - T vj op - • VCEsat - - - - - - Thermisches Interface Material bereits aufgetragen - - - - - - - - T - VCEsat - - - - - - **Digit** 1 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FF900R12IE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** |TechnischeInformation/TechnicalInformation<br>FF900R12IE4P<br>IGBT-Modul<br>IGBT-Module|| |---|---| |preparedby:SM<br>approvedby:RN<br>dateofpublication:2016-03-31<br>revision:V2.0<br>**VorläufigeDaten**<br>**PreliminaryData**<br>**IGBT,Wechselrichter/IGBT,Inverter**<br>**HöchstzulässigeWerte/MaximumRatedValues**<br>Kollektor-Emitter-Sperrspannung<br>Collector-emittervoltage<br>Tvj= 25°C<br>VCES<br>1200<br>V<br>Kollektor-Dauergleichstrom<br>ContinuousDCcollectorcurrent<br>TH= 60°C, Tvj max= 175°C<br>IC nom<br>900<br>A<br>PeriodischerKollektor-Spitzenstrom<br>Repetitivepeakcollectorcurrent<br>tP= 1 ms<br>ICRM<br>1800<br>A<br>Gate-Emitter-Spitzenspannung<br>Gate-emitterpeakvoltage<br>VGES<br>+/-20<br>V<br>**CharakteristischeWerte/CharacteristicValues**<br>min.<br>typ.<br>max.<br>Kollektor-Emitter-Sättigungsspannung<br>Collector-emittersaturationvoltage<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>IC= 900 A, VGE= 15 V<br>VCE sat<br>1,75<br>2,05<br>2,10<br>2,10<br>2,45<br>2,50<br>V<br>V<br>V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Gate-Schwellenspannung<br>Gatethresholdvoltage<br>IC= 33,0 mA, VCE= VGE, Tvj= 25°C<br>VGEth<br>5,20<br>5,80<br>6,40<br>V<br>Gateladung<br>Gatecharge<br>VGE= -15 V ... +15 V<br>QG<br>6,40<br>µC<br>InternerGatewiderstand<br>Internalgateresistor<br>Tvj= 25°C<br>RGint<br>1,2<br>Ω<br>Eingangskapazität<br>Inputcapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cies<br>54,0<br>nF<br>Rückwirkungskapazität<br>Reversetransfercapacitance<br>f = 1 MHz, Tvj= 25°C, VCE= 25 V, VGE= 0 V<br>Cres<br>3,00<br>nF<br>Kollektor-Emitter-Reststrom<br>Collector-emittercut-offcurrent<br>VCE= 1200 V, VGE= 0 V, Tvj= 25°C<br>ICES<br>5,0<br>mA<br>Gate-Emitter-Reststrom<br>Gate-emitterleakagecurrent<br>VCE= 0 V, VGE= 20 V, Tvj= 25°C<br>IGES<br>400<br>nA<br>Einschaltverzögerungszeit,induktiveLast<br>Turn-ondelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>td on<br>0,20<br>0,22<br>0,22<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Anstiegszeit,induktiveLast<br>Risetime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGon= 1,5Ω<br>tr<br>0,11<br>0,12<br>0,13<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Abschaltverzögerungszeit,induktiveLast<br>Turn-offdelaytime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>td off<br>0,66<br>0,75<br>0,79<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Fallzeit,induktiveLast<br>Falltime,inductiveload<br>IC= 900 A, VCE= 600 V<br>VGE= ±15 V<br>RGoff= 1,5Ω<br>tf<br>0,09<br>0,14<br>0,15<br>µs<br>µs<br>µs<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>EinschaltverlustenergieproPuls<br>Turn-onenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, di/dt = 5700 A/µs (Tvj= 150°C)<br>RGon= 1,3Ω<br>Eon<br>55,0<br>70,0<br>80,0<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>AbschaltverlustenergieproPuls<br>Turn-offenergylossperpulse<br>IC= 900 A, VCE= 600 V, LS= 45 nH<br>VGE= ±15 V, du/dt = 3200 V/µs (Tvj= 150°C)<br>RGoff= 1,5Ω<br>Eoff<br>85,0<br>120<br>130<br>mJ<br>mJ<br>mJ<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C<br>Kurzschlußverhalten<br>SCdata<br>VGE ≤15 V, VCC= 900 V<br>VCEmax= VCES-LsCE·di/dt<br>ISC<br>3600<br>A<br>Tvj= 150°C<br>tP ≤10 µs,<br>Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink<br>proIGBT/perIGBT<br>validwithIFXpre-appliedthermalinterfacematerial<br>RthJH<br>48,1 K/kW<br>TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions<br>Tvj op<br>-40<br>150<br>°C|| |preparedby:SM|dateofpublication:2016-03-31| |---|---| |approvedby:RN|revision:V2.0| 2 > IGBT-ModulIGBT-Module FF900R12IE4P ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** **Vorläufige�Daten Preliminary�Data** ## **Diode,�Wechselrichter�/�Diode,�Inverter Höchstzulässige�Werte�/�Maximum�Rated�Values** |PeriodischeSpitzensperrspannung<br>Repetitivepeakreversevoltage|Tvj= 25°C|VRRM|1200|1200||V| |---|---|---|---|---|---|---| |Dauergleichstrom<br>ContinuousDCforwardcurrent||IF|900|||A| |PeriodischerSpitzenstrom<br>Repetitivepeakforwardcurrent|tP= 1 ms|IFRM|1800|||A| |Grenzlastintegral<br>I²t-value|VR= 0 V, tP= 10 ms, Tvj= 125°C<br>VR= 0 V, tP= 10 ms, Tvj= 150°C|I²t|91,0<br>88,0|||kA²s<br>kA²s| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Durchlassspannung<br>Forwardvoltage|IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>IF= 900 A, VGE= 0 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|VF||1,90<br>1,85<br>1,80|2,40<br>2,35<br>2,30|V<br>V<br>V| |Rückstromspitze<br>Peakreverserecoverycurrent|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|IRM||500<br>660<br>710||A<br>A<br>A| |Sperrverzögerungsladung<br>Recoveredcharge|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Qr||90,0<br>150<br>195||µC<br>µC<br>µC| |AbschaltenergieproPuls<br>Reverserecoveryenergy|IF= 900 A, - diF/dt = 5700 A/µs (Tvj=150°C)<br>VR= 600 V<br>VGE= -15 V<br>Tvj= 25°C<br>Tvj= 125°C<br>Tvj= 150°C|Erec||40,0<br>80,0<br>90,0||mJ<br>mJ<br>mJ| |Wärmewiderstand,ChipbisKühlkörper<br>Thermalresistance,junctiontoheatsink|proDiode/perdiode<br>validwithIFXpre-appliedthermalinterfacematerial|RthJH|||87,2|K/kW| |TemperaturimSchaltbetrieb<br>Temperatureunderswitchingconditions||Tvj op|-40||150|°C| ## **NTC-Widerstand�/�NTC-Thermistor** ## **Charakteristische�Werte�/�Characteristic�Values** |**NTC-Widerstand/NTC-Thermistor**<br>|**NTC-Widerstand/NTC-Thermistor**<br>|||||| |---|---|---|---|---|---|---| |**CharakteristischeWerte/CharacteristicValues**|||min.|typ.|max.|| |Nennwiderstand<br>Ratedresistance|TNTC= 25°C|R25||5,00||kΩ| |AbweichungvonR100<br>DeviationofR100|TNTC= 100°C, R100= 493Ω|∆R/R|-5||5|%| |Verlustleistung<br>Powerdissipation|TNTC= 25°C|P25|||20,0|mW| |B-Wert<br>B-value|R2= R25exp [B25/50(1/T2- 1/(298,15 K))]|B25/50||3375||K| |B-Wert<br>B-value|R2= R25exp [B25/80(1/T2- 1/(298,15 K))]|B25/80||3411||K| |B-Wert<br>B-value|R2= R25exp [B25/100(1/T2- 1/(298,15 K))]|B25/100||3433||K| Angaben�gemäß�gültiger�Application�Note. Specification�according�to�the�valid�application�note. prepared�by:�SM date�of�publication:�2016-03-31 approved�by:�RN revision:�V2.0 3 > IGBT-ModulIGBT-Module FF900R12IE4P ## Technische�Information�/�Technical�Information **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** ## **Modul�/�Module** |**Modul/Module**||||||| |---|---|---|---|---|---|---| |Isolations-Prüfspannung<br>Isolationtestvoltage|RMS, f = 50 Hz, t = 1 min.|VISOL|4,0<br>|||kV| |MaterialModulgrundplatte<br>Materialofmodulebaseplate|||Cu|||| |InnereIsolation<br>Internalisolation|Basisisolierung(Schutzklasse1,EN61140)<br>basicinsulation(class1,IEC61140)||Al2O3|||| |Kriechstrecke<br>Creepagedistance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||33,0<br>33,0<br>|||mm| |Luftstrecke<br>Clearance|Kontakt-Kühlkörper/terminaltoheatsink<br>Kontakt-Kontakt/terminaltoterminal||19,0<br>19,0<br>|||mm| |VergleichszahlderKriechwegbildung<br>Comperativetrackingindex||CTI||> 400||| ||||min.|typ.|max.|| |Modulstreuinduktivität<br>Strayinductancemodule||LsCE||18||nH| |Modulleitungswiderstand,Anschlüsse-<br>Chip<br>Moduleleadresistance,terminals-chip|TH=25°C,proSchalter/perswitch|RCC'+EE'||0,30||mΩ| |Lagertemperatur<br>Storagetemperature||Tstg|-40||125|°C| |Höchstzulässige<br>Bodenplattenbetriebstemperatur<br>Maximumbaseplateoperationtemperature||TBPmax|||125|°C| |Anzugsdrehmomentf.Modulmontage<br>Mountingtorqueformodulmounting|SchraubeM5-Montagegem.gültigerApplikationsschrift<br>ScrewM5-Mountingaccordingtovalidapplicationnote|M|3,00||6,00|Nm| |Anzugsdrehmomentf.elektr.Anschlüsse<br>Terminalconnectiontorque|SchraubeM4-Montagegem.gültigerApplikationsschrift<br>ScrewM4-Mountingaccordingtovalidapplicationnote<br>SchraubeM8-Montagegem.gültigerApplikationsschrift<br>ScrewM8-Mountingaccordingtovalidapplicationnote|M|1,8<br>8,0|-<br>-|2,1<br>10|Nm<br>Nm| |Gewicht<br>Weight||G||825||g| Lagerung und Transport von Modulen mit TIM: siehe AN2012-07 Storage and shipment of modules with TIM: see AN2012-07 prepared�by:�SM approved�by:�RN date�of�publication:�2016-03-31 revision:�V2.0 4 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FF900R12IE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **Ausgangskennlinie�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) VGE�=�15�V **Ausgangskennlinienfeld�IGBT,Wechselrichter�(typisch) output�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VCE) Tvj�=�150°C **==> picture [484 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1800 1800<br>Tvj = 25 ° C VGE = 19V<br>Tvj = 125°C VGE = 17V<br>1600 T vj = 150°C 1600 V GE = 15V<br>VGE = 13V<br>VGE = 11V<br>1400 1400 VGE = 9V<br>1200 1200<br>1000 1000<br>800 800<br>600 600<br>400 400<br>200 200<br>0 0<br>0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0<br>VCE [V] VCE [V]<br> [A] [A]<br>IC IC<br>**----- End of picture text -----**<br> **Übertragungscharakteristik�IGBT,Wechselrichter�(typisch) transfer�characteristic�IGBT,Inverter�(typical)** IC�=�f�(VGE) VCE�=�20�V **Schaltverluste�IGBT,Wechselrichter�(typisch) switching�losses�IGBT,Inverter�(typical)** Eon�=�f�(IC),�Eoff�=�f�(IC) VGE�=�±15�V,�RGon�=�1.3� Ω ,�RGoff�=�1.5� Ω ,�VCE�=�600�V **==> picture [489 x 288] intentionally omitted <==** **----- Start of picture text -----**<br> 1800<br>T T vj vj = 25 = 125°C° C 250 E E on on , T , T vj vj = 125°C = 150 ° C<br>1600 T vj = 150°C Eoff, Tvj = 125°C<br>Eoff, Tvj = 150°C<br>1400<br>200<br>1200<br>1000 150<br>800<br>100<br>600<br>400<br>50<br>200<br>0 0<br>5 6 7 8 9 10 11 12 0 200 400 600 800 1000 1200 1400 1600 1800<br>VGE [V] IC [A]<br>prepared�by:�SM date�of�publication:�2016-03-31<br>approved�by:�RN revision:�V2.0<br> [A]<br>IC E [mJ]<br>**----- End of picture text -----**<br> 5 IGBT-Modul IGBT-Module ## FF900R12IE4P **==> picture [486 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Eon =f(R),E G off =f(R G) ZthJH =f (t)<br>VGE =+15V,1 C =900A,V CE =600V<br>450 rs 100 a<br>EEonon, T, Tvjvj = 125°C = 150°C (en| ZthJH : IGBT RAREa<br>400 E off , T vj = 125°C Le<br>Eoff, Tvj = 150°C<br>350<br>4 Sail mete aa a<br>300 10<br>250<br>200<br>4<br>150 YY 1<br>100<br>i: 1 2 3 4<br>50 ri[K/kW]: 3,56 14,3 20,8 9,45<br>τ i[s]: 0,000916 0,0315 0,124 0,877<br>0 0,1<br>0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 0,001 0,01 0,1 1 10<br>RG [ Ω ] t [s]<br>Sicherer Ruckwarts-Arbeitsbereich IGBT,Wechselrichter Durchlasskennlinie der Diode, Wechselrichter (typisch)<br>(RBSOA) forward characteristic of Diode, Inverter (typical)<br>reverse bias safe operating area IGBT,Inverter (RBSOA) IF =f(V F)<br>IC =f(V CE)<br>VGE =415V,R Goff =1.5 Ω ,T vj =150°C<br>2000 1800<br>I C , Modul Tvj = 25 ° C<br>1800 IC, Chip 1600 T T vjvj = 125°C = 150°C<br>Y/<br>q]<br>1600 /<br>1400 J<br>Uh<br>H<br>1400 1200 i]4<br>4<br>1200 4<br>A<br>1000 'y<br>iy<br>1000 //<br>800 vl<br>i<br>800 i<br>600<br>600<br>400<br>400<br>200 SSaeec= 200 |<br>0 0<br>a Jf<br>0 200 400 600 800 1000 1200 1400 0,0 0,5 1,0 1,5 2,0 2,5 3,0<br>VCE [V] VF [V]<br> [K/kW]<br>E [mJ]<br>thJH<br>Z<br> [A] [A]<br>IC IF<br>**----- End of picture text -----**<br> 6 ## IGBT-Modul IGBT-Module Technische Information FF900R12IE4P / Technical Information **==> picture [489 x 596] intentionally omitted <==** **----- Start of picture text -----**<br> Erec =f il F) Erec =f(R G)<br>RGon =1.3 Ω ,V CE =600V IF =900A,V CE =600V<br>120<br>120 Erec, Tvj = 125°C Erec, Tvj = 125°C<br>eo] E rec , T vj = 150°C 110 xB Erec, Tvj = 150°C<br>110<br>100<br>100<br>90<br>90<br>N<br>80 CORN<br>80 ec SENSE \ ERE<br>70 PINS<br>70 ET<br>60<br>60<br>A7 y | P| TNE<br>50<br>50<br>an/ |<br>40<br>40<br>/ | |<br>30 30<br>// | |<br>20 20<br>10 10<br>0 0<br>0 200 400 600 800 1000 1200 1400 1600 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0<br>IF [A] RG [ Ω ]<br>Transienter Warmewiderstand Diode, Wechselrichter Sicherer Arbeitsbereich Diode, Wechselrichter (SOA)<br>transient thermal impedance Diode, Inverter safe operation area Diode, Inverter (SOA)<br>ZthJH =f (t) IR =f(V R)<br>Tvj = 150°C<br>100 2000<br>ee ZthJH : Diode fy IR, Modul<br>1800<br>1600<br>1400<br>10<br>Se<br>a 1200<br>1000<br>800<br>1<br>600<br>400<br>i: 1 2 3 4<br>ri[K/kW]: 9,03 24,7 39 14,5<br>τ i[s]: 0,000749 0,0231 0,103 0,879 200<br>0,1 0<br>0,001 0,01 0,1 1 10 0 200 400 600 800 1000 1200 1400<br>t [s] VR [V]<br>E [mJ] E [mJ]<br> [K/kW]thJH [A]IR<br>Z<br>**----- End of picture text -----**<br> 7 ## Technische�Information�/�Technical�Information IGBT-ModulIGBT-Module FF900R12IE4P **==> picture [86 x 38] intentionally omitted <==** ## **Vorläufige�Daten Preliminary�Data** **NTC-Widerstand-Temperaturkennlinie�(typisch) NTC-Thermistor-temperature�characteristic�(typical)** R�=�f�(T) **==> picture [240 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>Rtyp<br>10000<br>1000<br>100<br>0 20 40 60 80 100 120 140 160<br>TNTC [°C]<br>] Ω<br>R[<br>**----- End of picture text -----**<br> prepared�by:�SM date�of�publication:�2016-03-31 approved�by:�RN revision:�V2.0 8 ## Technische�Information�/�Technical�Information > IGBT-ModulIGBT-Module FF900R12IE4P **==> picture [86 x 38] intentionally omitted <==** ## **Schaltplan�/�Circuit�diagram** ## **Vorläufige�Daten Preliminary�Data** ## **Gehäuseabmessungen�/�Package�outlines** **==> picture [439 x 486] intentionally omitted <==** **----- Start of picture text -----**<br> 1 154<br>restricted area for Thermal Interface Material<br>screwing depth<br>36 � 0,2 18 � 0,2 (2x) max. 16 (4x)<br>screwing depth<br>max. 8 (7x)<br>A 172 � 0,5<br>150<br>113<br>103<br>recommeded design height 92<br>lower side PCB to baseplate<br>58 76 �5,5 +-0,10<br>25,9 � 0,25 8 � 0,1 (7x) � (10x) � 0,25 A B C<br>� 0,4 A<br>(7x)<br>1 MAX<br>M4<br>� � 0,6 A B C<br>(7X)<br>45,5 � 0,5<br>25<br>14<br>M8<br>� � 0,6 A B C<br>(4x)<br>37,7 � 0,25 �285,5 � 0,1 17 � 0,1 C<br>B<br>recommeded design height 39<br>lower side bus bar to baseplate 64<br>78<br>117<br>156<br>prepared�by:�SM date�of�publication:�2016-03-31<br>approved�by:�RN revision:�V2.0<br>�<br>6,5<br>60<br>0,3<br> �<br>0,6 0,1<br>+22- 0 3 � 36,5<br>0,3<br>0,5 � 10 0,3<br>89 � 73 21 10 21,5 �<br>0,3<br> � 39<br>0,5<br>12,3 4,3 � 5,5<br>0,1<br> � 24,5<br>20<br>**----- End of picture text -----**<br> 9 ## IGBT-Modul IGBT-Module ## FF900R12IE4P ## **Nutzungsbedingungen** ## **WARNHINWEIS** ## **WARNINGS** 10
Updated at April 28, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
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We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →